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41. 发明授权

US08715910B2 Method for exposing an area on a substrate to a beam and photolithographic system 有权
标题翻译：将基板上的区域暴露于光束和光刻系统的方法
公开(公告)号：US08715910B2
公开(公告)日：2014-05-06
申请号：US12191957
申请日：2008-08-14
申请人： Vlad Temchenko , Chinteong Lim , Jens Schneider , Yves Fabien Rody
发明人： Vlad Temchenko , Chinteong Lim , Jens Schneider , Yves Fabien Rody
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G03F7/70558 , G03F7/70641 , G03F7/70725
摘要： Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.
摘要翻译：本发明的实施例描述了将基板上的区域暴露于梁的方法。该方法包括调整光束相对于衬底上的区域的焦点偏移，倾斜光束或使衬底倾斜，以及用光束曝光衬底上的区域，由此产生在不同焦点暴露的区域内的位置。此外，实施例描述了用于控制光刻系统以进行相同操作的计算机程序和用于进行相机的光刻系统。

42. 发明授权

US08464016B2 Method and device for switching over in a memory for a control device 有权
公开(公告)号：US08464016B2
公开(公告)日：2013-06-11
申请号：US11921132
申请日：2006-05-22
申请人： Claus Moessner , Gert Maier , Claus Spizig , Frank Lustig , Jens Schneider
发明人： Claus Moessner , Gert Maier , Claus Spizig , Frank Lustig , Jens Schneider
IPC分类号： G06F12/00
CPC分类号： G05B19/0426 , G05B2219/23325 , G05B2219/23428 , G05B2219/25303
摘要： A method and device for switching over in a memory for a control device, a first storage area in the control unit being overlaid by a second storage area; the second storage area including at least one memory page, and each of the memory pages being able to overlay the first storage area; switching over being able to be performed between the memory pages and the overlaying being able to be switched on/switched off, and the switching over of the memory pages and the switching on/switching off of the overlaying of the second storage area being automatically carried out and/or triggered by the software of the control unit.

43. 发明授权

US08406087B2 Watch 有权
标题翻译：看
公开(公告)号：US08406087B2
公开(公告)日：2013-03-26
申请号：US12771026
申请日：2010-04-30
申请人： Jens Schneider
发明人： Jens Schneider
IPC分类号： G04B19/20 , G04B19/02 , G04B19/06
CPC分类号： G04B19/202
摘要： A watch with a drive by which a gear train of a digital display having one or more number disks driven in rotation in cyclical steps and a manually actuatable disk adjusting mechanism. A drive wheel is advanced rotationally in steps by the drive of the watch and rotationally blocked between the steps. A unit wheel of a unit number disk can be rotationally advanced at ten steps per revolution. A stepping device, driven by the unit wheel drives a tens number disk rotationally at six steps per revolution. An hours number disk, is rotationally advanced directly or indirectly by the tens number disk at twelve steps per revolution during one revolution of the tens number disk.
摘要翻译：具有驱动器的手表，通过该驱动器，具有一个或多个数字盘的数字显示器的齿轮串以循环步骤旋转驱动，以及可手动致动的盘调节机构。驱动轮通过手表的驱动而被旋转地推进并在台阶之间旋转地阻挡。单位数盘的单位轮可以每转10步旋转推进。由单轮驱动的步进装置以每转六步旋转驱动数十个盘。在数十个磁盘的一圈内旋转数十个磁盘，数十个磁盘在数十个磁盘的旋转前进，十转。

44. 发明申请

US20130019222A1 System and Method for Detecting Parasitic Thyristors in an Integrated Circuit 有权
标题翻译：用于在集成电路中检测寄生晶闸管的系统和方法
公开(公告)号：US20130019222A1
公开(公告)日：2013-01-17
申请号：US13184011
申请日：2011-07-15
申请人： Krzysztof Domanski , Jens Schneider , Angelika Jungmann
发明人： Krzysztof Domanski , Jens Schneider , Angelika Jungmann
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5081
摘要： In an embodiment, a method includes retrieving a layout of an integrated circuit design from a non-transitory computer readable medium, identifying a silicon controlled rectifier (SCR) structure in the layout, identifying a current injection site in the layout, and determining if a distance between the identified current injection site and the identified SCR structure is less than a first threshold. A violation is flagged if the determined distance is less than the first threshold.
摘要翻译：在一个实施例中，一种方法包括从非暂时计算机可读介质检索集成电路设计的布局，识别布局中的可控硅整流器（SCR）结构，识别布局中的当前注入位置，以及确定是否所识别的电流注入位置与所识别的SCR结构之间的距离小于第一阈值。如果确定的距离小于第一个阈值，则会发生违规。

45. 发明申请

US20120173163A1 PROBE PLUG FOR EXHAUST GAS PROBE 有权
标题翻译：用于排气检测的探头
公开(公告)号：US20120173163A1
公开(公告)日：2012-07-05
申请号：US13395563
申请日：2010-07-27
申请人： Jens Schneider , Frank Stanglmeier , Marc Rosenland , Lothar Diehl
发明人： Jens Schneider , Frank Stanglmeier , Marc Rosenland , Lothar Diehl
IPC分类号： G06F19/00
CPC分类号： G01N27/4065 , F02D41/1444 , F02D41/1454 , F02D41/1494 , F02D41/2435 , F02D41/2451 , G01N27/4062 , G01N27/407 , G01N27/4175
摘要： The invention relates to an exhaust gas probe (120) for measuring properties of the exhaust gas of internal combustion engines, wherein at least one data storage unit (135) is arranged in a circuit associated with the probe, in particular arranged in a probe plug (130) or a connecting element associated therewith. The following properties and/or adaption functions characterizing the probe (120) are stored or storable in said data storage unit:—fluctuations of heating resistances that are due to the production process and/or—parameters that characterize the aging of the probe (120), and/or—the shut-off state, in particular data that characterize the execution of an interval measurement for regenerating the exhaust gas probe or of a delayed shut-off and/or—data for adapting the probe (120) to different control devices (140) of internal combustion engines and/or—the number of operating hours of the probe and/or—the operating parameters of the probe in a previous specifiable time period.
摘要翻译：本发明涉及一种用于测量内燃机排气性能的排气探测器（120），其中至少一个数据存储单元（135）布置在与探头相关的电路中，特别地布置在探头塞（130）或与其相关联的连接元件。表征探针（120）的以下性质和/或适应功能被存储或存储在所述数据存储单元中： - 由于生产过程导致的加热电阻的差异和/或 - 表征探针的老化（120 ）和/或关闭状态，特别是表征用于再生排气探针的间隔测量的执行的数据或用于使探针（120）适应不同的延迟关闭和/或数据的数据内部燃烧发动机的控制装置（140）和/或 - 在先前可指定的时间段内的探针的运行时间和/或探针的操作参数。

46. 发明授权

US07986009B2 Integrated circuit arrangements with ESD-resistant capacitor and corresponding method of production 有权
公开(公告)号：US07986009B2
公开(公告)日：2011-07-26
申请号：US12511845
申请日：2009-07-29
申请人： Kai Esmark , Harald Gossner , Christian Russ , Jens Schneider
发明人： Kai Esmark , Harald Gossner , Christian Russ , Jens Schneider
IPC分类号： H01L23/62
摘要： A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the well and the capacitor has a high ESD strength. An optionally present auxiliary doping layer ensures a high area capacitance of the capacitor despite high ESD strength.

47. 发明申请

US20110038085A1 Lateral Bipolar Transistor with Additional ESD Implant 有权
标题翻译：具有附加ESD植入物的侧向双极晶体管
公开(公告)号：US20110038085A1
公开(公告)日：2011-02-17
申请号：US12912437
申请日：2010-10-26
申请人： Jens Schneider , Martin Wendel
发明人： Jens Schneider , Martin Wendel
IPC分类号： H02H9/04 , H01L21/761
CPC分类号： H01L27/0259 , H01L29/1008 , H01L29/735
摘要： A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.
摘要翻译：公开了一种保护半导体电路免受静电放电的方法。在节点处接收静电放电。通过静电放电产生的电流垂直地引导到半导体本体中，横向穿过半导体并且在沟槽隔离区下方，使得电流在平行于半导体本体的上表面的方向上流动到参考电源节点。参考供应节点形成在设置在半导体主体的上表面上的导电层中。

48. 发明申请

US20100208405A1 Semiconductor ESD Device and Method of Making Same 有权
标题翻译：半导体ESD器件及其制造方法
公开(公告)号：US20100208405A1
公开(公告)日：2010-08-19
申请号：US12769021
申请日：2010-04-28
申请人： Cornelius Christian Russ , Kai Esmark , David Alvarez , Jens Schneider
发明人： Cornelius Christian Russ , Kai Esmark , David Alvarez , Jens Schneider
IPC分类号： H02H9/02 , H01L27/06 , H01L23/60
CPC分类号： H01L29/735 , H01L27/0262 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/41708 , H01L29/456 , H01L29/732 , H01L29/7436
摘要： A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom.
摘要翻译：半导体器件包括设置在第一半导体类型的半导体本体内的ESD器件区域，围绕ESD器件区域的隔离区域，设置在ESD区域内的半导体本体的表面处的第二导电类型的第一掺杂区域，以及设置在ESD区域内的半导体本体与第一掺杂区域的至少一部分之间的第一导电类型的第二掺杂区域，其中第二掺杂区域的掺杂浓度高于半导体本体。第二半导体类型的第三掺杂区域设置在半导体本体上，并且第一导电类型的第四区域设置在第三掺杂区域上。第二导电类型的第五掺杂区域设置在半导体本体上。触发装置和SCR由其形成。

49. 发明申请

US20100206268A1 HEATING DEVICE FOR LIQUID FUELS AND THE LIKE 有权
标题翻译：用于液体燃料的加热装置和类似物
公开(公告)号：US20100206268A1
公开(公告)日：2010-08-19
申请号：US12678688
申请日：2008-09-17
申请人： Jens Schneider , Jean-Marc Couffignal , Stephan Ernst
发明人： Jens Schneider , Jean-Marc Couffignal , Stephan Ernst
IPC分类号： F02M61/00 , H05B3/02
CPC分类号： F02M31/125 , F02M53/06 , F02N19/04 , F23Q7/001 , H05B3/141 , H05B2203/027 , Y02T10/126
摘要： A heating device, which is designed as a heater for liquid fuels, has a housing component and a heating element embedded in the housing component. The heating element is designed as a self-regulating heating element, so that protection against overheating is ensured.
摘要翻译：设计为液体燃料加热器的加热装置具有壳体部件和嵌入壳体部件中的加热元件。加热元件设计为自调节加热元件，确保了过热保护。

50. 发明申请

US20100163995A1 Semiconductor Device With Cooling Element 有权
标题翻译：带冷却元件的半导体器件
公开(公告)号：US20100163995A1
公开(公告)日：2010-07-01
申请号：US12720700
申请日：2010-03-10
申请人： Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
发明人： Harald Gossner , Christian Russ , Jens Schneider , Thomas Schulz
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/785 , H01L23/367 , H01L27/0248 , H01L29/66795 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments discussed herein include a semiconductor having a source region, a drain region and an array of fins operatively coupled to a gate region controlling current flow through the fins between the source region and the drain region. The semiconductor also has at least one cooling element formed at least in part of a material having a heat capacity equal to or larger than the heat capacity of the material of the source region, drain region and array of fins, the cooling elements being in close vicinity to fins of the array of fins electrically isolated from the fins of the array, the source region and the drain region. Other embodiments are also disclosed
摘要翻译：本文讨论的一些实施例包括具有源极区域，漏极区域和翅片阵列的半导体，其可操作地耦合到栅极区域，以控制流过源极区域和漏极区域之间的鳍片的电流。所述半导体还具有至少一部分形成有至少部分热容量等于或大于所述源极区域，漏极区域和散热片阵列的热容量的冷却元件的冷却元件，所述冷却元件处于闭合状态靠近与阵列的鳍片，源极区域和漏极区域电隔离的翅片阵列的翅片。还公开了其他实施例

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