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    • 41. 发明授权
    • Method and apparatus for increasing the processing capacity of optical
digital processing systems having optically bistable devices
    • 具有光学双稳态器件的光学数字处理系统的处理能力增加的方法和装置
    • US4914286A
    • 1990-04-03
    • US340975
    • 1989-04-20
    • Leo M. F. ChirovskyAnthony L. LentineDavid A. B. Miller
    • Leo M. F. ChirovskyAnthony L. LentineDavid A. B. Miller
    • G02F3/02G06E1/00
    • G02F3/028
    • An optically bistable device, such as a symmetric self electro-optic effect device (S-SEED), is forced into a metastable state prior to the incidence of an optical input signal thereto, thereby increasing the sensitivity of the optically bistable device to the optical input signal, reducing both the switching time and the optical input signal energy required to switch the device. The metastable state is entered into by one of three techniques: (1) turning off the bias voltage V.sub.0 of the device with optical bias beams on then turning on the bias voltage V.sub.0 with the optical bias beams off; (2) applying a predetermined voltage to a node in the device, the predetermined voltage being substantially the metastable state voltage or V.sub.0 /2; or (3) subjecting the device to equal intensity optical bias beams having a wavelength longer than the exciton wavelength. In the second case, optical bias beams and optical input signal beams may be applied simultaneously with the application of the predetermined voltage. In the last case, optical bias beams (at the exciton wavelength) and the optical input signal beams can be applied simultaneously after removal of the long-wavelength optical bias beams, thus saving switching time. In addition, the optically bistable device may be selectively placed in the metastable state and the optical input signal have sufficient energy to switch the device only when it is in the metastable state. This allows for multiple optically bistable devices to be selectively responsive to a common optical input signal, such as in a demultiplexer.
    • 42. 发明授权
    • Self electrooptic effect device employing asymmetric quantum wells
    • 采用非对称量子阱的自电光效应装置
    • US4904859A
    • 1990-02-27
    • US298591
    • 1989-01-17
    • Keith W. GoossenDavid A. B. Miller
    • Keith W. GoossenDavid A. B. Miller
    • G02F3/02
    • G02F3/028
    • Lower switching energies, enhanced electroabsorption and reduced tolerances on the operating wavelength of incident light are achieved while contrast between low and high absorption states is maintained in accordance with the principles of the invention by a self electrooptic device including an intrinsic quantum well region having an asymmetric electronic characteristic across a narrow bandgap subregion between the two wide bandgap layers defining the quantum well region. As a result, the quantum well region polarizes electrons and holes within the subregion in an opposite direction relative to a direction for an electric field applied to the device. The asymmetric electronic characteristic is realized as a compositionally graded, narrow bandgap layer or as a pair of coupled narrow bandgap layers of differing thicknesses separated by a thin wide bandgap layer.
    • 通过包括具有非对称性的固有量子阱区域的自身电子装置,根据本发明的原理保持较低的开关能量,增强的电吸收和降低的入射光的工作波长的公差,同时根据本发明的原理保持低吸收和高吸收状态之间的对比度。 限定量子阱区的两个宽带隙层之间的窄带隙子区域的电子特性。 结果,量子阱区域使得子区域内的电子和空穴相对于施加到器件的电场方向相反的方向偏振。 不对称电子特性被实现为组成梯度,窄带隙层或由宽的宽带隙层隔开的一对不同厚度的耦合窄带隙层。
    • 43. 发明授权
    • Optical reading of quantum well device
    • 量子阱器件的光学读数
    • US4761620A
    • 1988-08-02
    • US937387
    • 1986-12-03
    • Israel Bar-JosephTao-Yuan ChangDaniel S. ChemlaDavid A. B. Miller
    • Israel Bar-JosephTao-Yuan ChangDaniel S. ChemlaDavid A. B. Miller
    • H01L27/10G02F1/015G02F1/017H01L21/338H01L29/778H01L29/812H01L31/10H01L31/14
    • B82Y20/00G02F1/017
    • Optical apparatus is disclosed wherein narrow line width light from a source is directed through the substrate of a semiconductor structure and reflected from the gate electrode of a field effect transistor element fabricated on the surface of the semiconductor structure. A quantum well layer serves as the current channel for the field effect transistor, and charge carries from a doped semiconductor layer provide high mobility carriers in the quantum well layer. Changes in the potential between the gate and source electrodes of the field effect transistor causes the normal pinchoff of carriers in the quantum well layer thereby causing changes in the absorption characteristic presented by the quantum well layer. By directing light from the source at the gate electrode through the substrate of the semiconductor structure, a photodetector can be positioned so as to detect a change in light which has passed twice through the quantum well layer, thereby detecting a change in the electrical state of the field effect transistor.
    • 公开了一种光学装置,其中来自源极的窄线宽度光被引导通过半导体结构的衬底,并且从制造在半导体结构的表面上的场效应晶体管元件的栅电极反射。 量子阱层用作场效应晶体管的电流通道,并且来自掺杂半导体层的电荷携带在量子阱层中提供高迁移率载流子。 场效应晶体管的栅极和源极之间的电势的变化导致量子阱层中载流子的正常尖峰,从而引起量子阱层所呈现的吸收特性的变化。 通过将来自栅极的光源通过半导体结构的基板引导,可以将光电检测器定位以便检测已经通过量子阱层的两次的光的变化,从而检测电子状态的变化 场效应晶体管。
    • 44. 发明授权
    • Optical device with quantum well absorption
    • 具有量子阱吸收的光学器件
    • US4751378A
    • 1988-06-14
    • US42202
    • 1987-04-24
    • Harvard S. HintonAnthony L. LentineDavid A. B. Miller
    • Harvard S. HintonAnthony L. LentineDavid A. B. Miller
    • G02F1/017G02F3/02H01J40/14
    • B82Y20/00G02F1/01716G02F3/028
    • An optically bistable device 100 is disclosed having a self electro-optic effect device (SEED) 104 and a variable optical attenuator 103 for maintaining the state of the SEED over a wide power range of two input light beams. The SEED is responsive to the relative power levels of the two input light beams for assuming one of two states. The state of the SEED is determined by the transmission level of one of the beams passing through quantum well region 102 of the device. The variable optical attenuator concomitantly varies the power level of the two input beams to maintain the present state of the SEED over a wide range of input light beam powers. When operated in a bistable operating region of the device, a control light beam with a low power level changes the device from one state to another. Two threshold values of a ratio of power between the two input beams establish where the device switches from one state to the other.
    • 公开了一种光学双稳态装置100,其具有用于在两个输入光束的宽功率范围内保持SEED的状态的自电光效应装置(SEED)104和可变光衰减器103。 SEED响应于两个输入光束的相对功率电平,用于采用两种状态之一。 SEED的状态由通过设备的量子阱区域102的一个光束的透射电平决定。 可变光衰减器同时改变两个输入光束的功率电平,以保持SEED在宽的输入光束功率范围内的当前状态。 当在设备的双稳态操作区域中操作时,具有低功率电平的控制光束将设备从一个状态改变到另一个状态。 两个输入光束之间的功率比的两个阈值确定了设备从一个状态切换到另一个状态。
    • 46. 发明授权
    • Optical modulator with side access
    • 具有侧面访问的光调制器
    • US07532379B2
    • 2009-05-12
    • US11524498
    • 2006-09-19
    • David A. B. MillerJonathan E. Roth
    • David A. B. MillerJonathan E. Roth
    • G02F1/03G02F1/035G02F1/295
    • G02F1/195B82Y20/00G02F1/015G02F1/017
    • An electro-optic semiconductor device (e.g., an optical modulator) having side access and beam propagation within the device is provided. Side access for the optical input and/or output facilitates disposition of electronic circuitry and/or heat sinking structures on the top and bottom surfaces of the modulator. Internal beam propagation instead of internal waveguiding advantageously simplifies optical coupling and alignment to the modulator. Interaction length within the device is preferably enhanced by passing through the device active region at a relatively shallow angle. The internally propagating beam is reflected from a reflective face parallel to the device active region. The side faces can be perpendicular or tilted with respect to the reflective face. Tilted side faces are preferably tilted to provide external beam paths parallel to the reflective face. Internal reflection from an angled side face can be employed to provide configurations having one side port and one top or bottom port.
    • 提供了具有侧面访问和装置内的波束传播的电光半导体器件(例如,光调制器)。 光输入和/或输出的侧面访问便于在调制器的顶表面和底表面上布置电子电路和/或散热结构。 内部波束传播而不是内部波导有利地简化了与调制器的光耦合和对准。 装置内的相互作用长度优选通过以相对浅的角度穿过装置有源区而增强。 内部传播光束从平行于器件有源区域的反射面反射。 侧面可以相对于反射面垂直或倾斜。 倾斜的侧面优选地倾斜以提供平行于反射面的外部光束路径。 可以使用来自成角度侧面的内部反射来提供具有一个侧面端口和一个顶部或底部端口的构造。
    • 47. 发明授权
    • Method for dispersing light using multilayered structures
    • US06591035B2
    • 2003-07-08
    • US09778327
    • 2001-02-06
    • David A. B. MillerMartina GerkenBianca E. Nelson
    • David A. B. MillerMartina GerkenBianca E. Nelson
    • G02B628
    • G02B5/285G02B27/1086G02B27/145H04J14/02
    • A novel method and device for separating light of differing wavelengths (wavelength demultiplexing) uses a very simple and compact multilayer dielectric structure having high angular dispersion at certain wavelengths and angles of incidence. The structure is composed of alternating layers of dielectric materials of different refractive indices, and is designed to operate just outside the main reflection region rather than within the main reflection region. In this region just outside the main reflection region there is strong group velocity dispersion, causing different wavelengths of light to travel at different angles through the dielectric stack. As a consequence, different wavelength components of a polychromatic beam are separated as they pass through the device. The dielectric stack is preferably fabricated upon one or both sides of a transparent substrate so that the device can operate with light entering and/or exiting the substrate, eliminating the need for complicated antireflective coatings interfaced with the stack. Preferably, the device also comprises anti-reflective and reflective coatings to attain high optical efficiency and to increase spatial separation of the wavelengths of light, further reducing the size of the device. The device can also operate as a multiplexer by simply reversing the direction of the light. The device may be used for optical demultiplexing a polychromatic beam into spatially separated wavelength component beams by coupling the polychromatic beam into the multilayer dielectric stack, separating the polychromatic beam into component beams having distinct component wavelengths as the polychromatic beam passes through the multilayer dielectric stack, and coupling the component beams out of the multilayer dielectric stack. By reflecting the component beams from one or more mirrors in contact with the multilayer dielectric stack and/or substrate, further separation of the component beams may be produced as the component beams again pass through the multilayer dielectric stack. The method may also include transmitting the component beams and/or the polychromatic beam through antireflective material layers in contact with the multilayer dielectric stack and/or the substrate.
    • 48. 发明授权
    • Miniaturized Talbot spectrometer
    • 小型Talbot光谱仪
    • US06525815B2
    • 2003-02-25
    • US10007796
    • 2001-11-09
    • Helen L. KungDavid A. B. Miller
    • Helen L. KungDavid A. B. Miller
    • G01J328
    • G01J3/02G01J3/0229G01J3/0256G01J3/45G01J3/453
    • A transform spectrometer determines the spectrum of light based on the Talbot effect. Light to be analyzed is passed through a spatially periodic object, thereby generating a series of Talbot images. The intensities of these Talbot images at different optical distances from the spatially periodic object are then detected, and Fourier transformed to determine the spectrum of the light. Preferably, the detector comprises a spatial masking pattern such that the intensities detected are maximized at Talbot planes or at the midpoints between Talbot planes. In one embodiment, the optical distance between the spatially periodic object and the detector is changed in order to detect image intensities at different Talbot planes. In another embodiment, the detector and the spatially periodic object are positioned along a common optical axis at relative angle &thgr; such that different detector rows detect intensities at different Talbot planes. In yet another embodiment, the spatially periodic object is both a grating and a detector, and the Talbot images generated by the grating are reflected off a mirror back to the detector.
    • 变换光谱仪基于Talbot效应确定光谱。 要分析的光通过空间周期的物体,从而产生一系列Talbot图像。 然后检测这些Talbot图像在距离空间周期物体的不同光学距离处的强度,并进行傅里叶变换以确定光谱。 优选地,检测器包括空间掩蔽图案,使得检测到的强度在Talbot平面或Talbot平面之间的中点处最大化。 在一个实施例中,改变空间周期性物体与检测器之间的光学距离,以便检测不同Talbot平面处的图像强度。 在另一个实施例中,检测器和空间周期性物体沿着公共光轴以相对角度θ定位,使得不同的检测器行检测不同Talbot平面处的强度。 在另一个实施例中,空间周期性物体既是光栅又是检测器,并且由光栅产生的Talbot图像被反射回到检测器。