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    • 46. 发明申请
    • Micro-tile memory interfaces
    • 微瓦片存储器接口
    • US20070002668A1
    • 2007-01-04
    • US11174134
    • 2005-06-30
    • Peter WilliamsJames AkiyamaDouglas Gabel
    • Peter WilliamsJames AkiyamaDouglas Gabel
    • G11C8/00
    • G11C8/12G06F13/1684G11C5/04G11C11/4082
    • In one embodiment of the invention, a memory integrated circuit is provided including an address decoder to selectively access memory cells within a memory array; a mode register with bit storage circuits to store an enable bit and at least one sub-channel select bit; and control logic. The control logic is coupled to a plurality of address signal lines, the address decoder, and the mode register. In response to the enable bit and the at least one sub-channel select bit, the control logic selects one or more of the address signal lines to capture independent address information to support independent sub-channel memory accesses into the memory array. The control logic couples the independent address information into the address decoder.
    • 在本发明的一个实施例中,提供一种存储器集成电路,包括:地址解码器,用于选择性地访问存储器阵列内的存储单元; 具有位存储电路的模式寄存器,用于存储使能位和至少一个子通道选择位; 和控制逻辑。 控制逻辑耦合到多个地址信号线,地址解码器和模式寄存器。 响应于使能位和至少一个子通道选择位,控制逻辑选择一个或多个地址信号线以捕获独立的地址信息,以支持对存储器阵列的独立子通道存储器访问。 控制逻辑将独立的地址信息耦合到地址解码器中。