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    • 50. 发明授权
    • Apparatus for defining regions of process exclusion and process performance in a process chamber
    • 用于限定处理室中的工艺排除区域和工艺性能的装置
    • US07575638B2
    • 2009-08-18
    • US11701854
    • 2007-02-02
    • Andrew D. Bailey, IIIJack ChenYunsang KimGregory S. Sexton
    • Andrew D. Bailey, IIIJack ChenYunsang KimGregory S. Sexton
    • B05B5/025C23C16/00C23F1/00H01L21/306
    • H01L21/67069H01J37/32568H01L21/68721
    • Positional relationships are established in a process chamber. An upper electrode is configured with a first surface to support a wafer, and an electrode has a second surface. A linear drive is mounted on the base and a linkage connected between the drive and the upper electrode. Linkage adjustment defines a desired orientation between the surfaces. The linear drive and linkage maintain the desired orientation while the assembly moves the upper electrode with the surfaces moving relative to each other. An annular etching region defined between the electrodes enables etching of a wafer edge exclusion region extending along a top and bottom of the wafer. Removable etch defining rings are configured to define unique lengths along each of the top and bottom of the wafer to be etched. Positional relationships of the surfaces enable limiting the etching to those unique lengths of the exclusion region.
    • 位置关系建立在一个过程室中。 上电极配置有第一表面以支撑晶片,并且电极具有第二表面。 线性驱动器安装在基座上,连接在驱动器和上电极之间。 连接调整定义了表面之间的期望取向。 线性驱动器和连接件保持所需的取向,同时组件移动上电极,表面相对于彼此移动。 限定在电极之间的环形蚀刻区域能够蚀刻沿着晶片的顶部和底部延伸的晶片边缘排除区域。 可移除蚀刻限定环被配置为沿待蚀刻的晶片的顶部和底部的每一个限定独特的长度。 表面的位置关系使得能够将蚀刻限制到排除区域的那些独特长度。