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41. 发明授权

US07927942B2 Selective silicide process 有权
标题翻译：选择性硅化物工艺
公开(公告)号：US07927942B2
公开(公告)日：2011-04-19
申请号：US12339672
申请日：2008-12-19
申请人： Ivo Raaijmakers
发明人： Ivo Raaijmakers
IPC分类号： H01L21/8238
CPC分类号： H01L21/76823 , C23C16/405 , C23C16/56 , H01L21/28518 , H01L21/28562 , H01L29/665 , H01L29/66568
摘要： A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations.
摘要翻译：在具有高纵横比的结构上的自对准硅化物的方法包括使用原子层沉积（ALD）沉积金属氧化物膜并将金属氧化物膜转化为金属膜以获得均匀的台阶覆盖。然后将衬底退火，使得直接覆盖图案化和暴露的硅的区域中的金属与硅反应，以在期望的位置形成均匀的金属硅化物。

42. 发明授权

US07921805B2 Deposition from liquid sources 有权
标题翻译：液体源沉积
公开(公告)号：US07921805B2
公开(公告)日：2011-04-12
申请号：US12691243
申请日：2010-01-21
申请人： Michael A. Todd , Ivo Raaijmakers
发明人： Michael A. Todd , Ivo Raaijmakers
IPC分类号： C23C16/00
CPC分类号： H01L21/67253 , C23C16/4481 , C23C16/4483 , C23C16/4486 , H01L21/02381 , H01L21/02422 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262 , H01L21/67115
摘要： A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
摘要翻译：在半导体制造过程中，使用液体注入器将硅前体汽化并注入到处理室中以形成含硅层。注射器连接到硅前体源，其优选包括与一种或多种掺杂剂前体的混合物中的液体丙硅烷。将混合物计量为液体并输送到注射器，然后将其蒸发并注入到处理室中。

43. 发明申请

US20100107978A1 DEPOSITION FROM LIQUID SOURCES 有权
标题翻译：液体来源沉积
公开(公告)号：US20100107978A1
公开(公告)日：2010-05-06
申请号：US12691243
申请日：2010-01-21
申请人： Michael A. Todd , Ivo Raaijmakers
发明人： Michael A. Todd , Ivo Raaijmakers
IPC分类号： B05C11/00 , C23C16/00
CPC分类号： H01L21/67253 , C23C16/4481 , C23C16/4483 , C23C16/4486 , H01L21/02381 , H01L21/02422 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262 , H01L21/67115
摘要： A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
摘要翻译：在半导体制造过程中，使用液体注入器将硅前体汽化并注入到处理室中以形成含硅层。注射器连接到硅前体源，其优选包括与一种或多种掺杂剂前体的混合物中的液体丙硅烷。将混合物计量为液体并输送到注射器，然后将其蒸发并注入到处理室中。

44. 发明授权

US07682947B2 Epitaxial semiconductor deposition methods and structures 有权
标题翻译：外延半导体沉积方法和结构
公开(公告)号：US07682947B2
公开(公告)日：2010-03-23
申请号：US11755528
申请日：2007-05-30
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
摘要翻译：用于沉积诸如外延Ge和SiGe膜的外延膜的方法。在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。导致平滑，薄，相对缺陷的Ge或SiGe层。还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

45. 发明申请

US20100006024A1 EPITAXIAL SEMICONDUCTOR DEPOSITION METHODS AND STRUCTURES 有权
标题翻译：外延半导体沉积方法和结构
公开(公告)号：US20100006024A1
公开(公告)日：2010-01-14
申请号：US12556377
申请日：2009-09-09
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： C30B23/04
CPC分类号： C30B25/02 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
摘要翻译：用于沉积诸如外延Ge和SiGe膜的外延膜的方法。在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。导致平滑，薄，相对缺陷的Ge或SiGe层。还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

46. 发明授权

US07431767B2 Apparatus and method for growth of a thin film 有权
标题翻译：用于生长薄膜的装置和方法
公开(公告)号：US07431767B2
公开(公告)日：2008-10-07
申请号：US11605615
申请日：2006-11-27
申请人： Ivo Raaijmakers
发明人： Ivo Raaijmakers
IPC分类号： C30B25/12
CPC分类号： C23C16/45544 , C23C16/452 , C23C16/45521 , C23C16/45536 , C23C16/45542 , C30B25/14 , C30B29/38 , H01J37/3244 , Y10T117/10
摘要： An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.
摘要翻译：一种用于衬底层沉积的改进的装置和方法，其中衬底层通过将反应物的顺序脉冲的载气输送到衬底表面而生长。至少一种反应物包括激发的物质，例如自由基。在具体实施方案中，本发明的装置在载体气流中提供反应物的顺序重复脉冲，以在基底表面反应。反应物脉冲以足够的中间延迟时间递送，以使气相中相邻脉冲中的反应物之间的不希望的反应最小化，或者在衬底表面上产生不期望的不受控制的反应。

47. 发明申请

US20080237048A1 METHOD AND APPARATUS FOR SELECTIVE ELECTROFILLING OF THROUGH-WAFER VIAS 审中-公开
标题翻译：用于选择性电弧穿透的方法和装置
公开(公告)号：US20080237048A1
公开(公告)日：2008-10-02
申请号：US11694655
申请日：2007-03-30
申请人： Ismail Emesh , Ivo Raaijmakers
发明人： Ismail Emesh , Ivo Raaijmakers
IPC分类号： C25D5/04 , C25D17/22
CPC分类号： C25D1/00 , C25D1/02 , C25D5/04 , C25D17/001 , C25D17/12 , C25D21/10 , H01L21/2885 , H01L21/76898
摘要： A device for electrodepositing a conductive material from a first solution into at least one feature formed on a wafer includes a hollow body, an electrode, and a moving mechanism. The hollow body includes a first opening and a second opening. The first solution is supplied to the second opening and injected from the first opening. The electrode is disposed within the hollow body. A potential difference is applicable between the first electrode and the surface of the wafer to electrodeposit the conductive material into the at least one feature. The moving mechanism is mechanically coupled to the hollow body. The moving mechanism is configured to position the first opening of the hollow body over the at least one feature.
摘要翻译：用于将导电材料从第一溶液电沉积到形成在晶片上的至少一个特征的装置包括中空体，电极和移动机构。中空体包括第一开口和第二开口。将第一溶液供应到第二开口并从第一开口注入。电极设置在中空体内。在第一电极和晶片的表面之间可以应用电位差，以将导电材料电沉积到至少一个特征中。移动机构机械地联接到中空体。移动机构构造成将中空体的第一开口定位在至少一个特征上。

48. 发明申请

US20080093711A1 DIELECTRIC LAYERS AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：电介质层及其形成方法
公开(公告)号：US20080093711A1
公开(公告)日：2008-04-24
申请号：US11958162
申请日：2007-12-17
申请人： Ivo Raaijmakers , Pekka Soininen , Jan Maes
发明人： Ivo Raaijmakers , Pekka Soininen , Jan Maes
IPC分类号： H01L23/58
CPC分类号： H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or nitridized to form, e.g., silicon dioxide or silicon nitride, when exposed to oxygen or nitrogen source gases at elevated temperatures. This dielectric growth is preferential underneath the grain boundaries such that any oxidation or nitridation at the interface between the high-k material grains and covered conductor is not as extensive. The overall dielectric constant of the composite film is high, while leakage current paths between grains is reduced. Ultrathin high-k materials with low leakage current are thereby enabled.
摘要翻译：高介电常数（高k）材料直接在氧化敏感导体（如硅）上形成。形成不连续层，在高k材料的晶粒之间形成间隙。在高温下暴露于氧或氮源气体时，在晶界之下的暴露导体被氧化或氮化以形成例如二氧化硅或氮化硅。这种电介质生长优选在晶界之下，使得在高k材料晶粒和被覆导体之间的界面处的任何氧化或氮化不是很广泛。复合膜的总介电常数高，而晶粒间的漏电流路径减小。从而能够实现低泄漏电流的超薄高k材料。

49. 发明授权

US07141499B2 Apparatus and method for growth of a thin film 有权
公开(公告)号：US07141499B2
公开(公告)日：2006-11-28
申请号：US10317266
申请日：2002-12-10
申请人： Ivo Raaijmakers
发明人： Ivo Raaijmakers
IPC分类号： H01L21/44 , H05H1/00 , C23C16/04 , C30B25/12
CPC分类号： C23C16/45544 , C23C16/452 , C23C16/45521 , C23C16/45536 , C23C16/45542 , C30B25/14 , C30B29/38 , H01J37/3244 , Y10T117/10
摘要： An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.

50. 发明授权

US07115521B2 Epitaxial semiconductor deposition methods and structures 有权
公开(公告)号：US07115521B2
公开(公告)日：2006-10-03
申请号：US10993024
申请日：2004-11-18
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02661
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

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