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41. 发明申请

US20050069090A1 Optical alignment of X-ray microanalyzers 有权
标题翻译： X射线微量分析仪的光学校准
公开(公告)号：US20050069090A1
公开(公告)日：2005-03-31
申请号：US10673996
申请日：2003-09-29
申请人： Tzachi Rafaeli , Isaac Mazor
发明人： Tzachi Rafaeli , Isaac Mazor
IPC分类号： G01N23/223 , A61B6/08 , G01N23/22
CPC分类号： G01N23/22
摘要： A method for X-ray analysis of a sample includes aligning an optical radiation source with an X-ray excitation source, so that a spot on the sample that is irradiated by an X-ray beam generated by the X-ray excitation source is illuminated with optical radiation generated by the optical radiation source. Optical radiation that is reflected from the sample is used to generate a first signal, which is indicative of an alignment of the spot on the sample. The X-ray beam is aligned, responsively to the first signal, so that the spot coincides with a target area of the sample. X-ray photons received from the spot on the sample, after aligning the X-ray beam, are used in generating a second signal that is indicative of a characteristic of the target area.
摘要翻译：用于样品的X射线分析的方法包括使光辐射源与X射线激发源对准，使得由X射线激发源产生的X射线束照射的样品上的斑点被照亮具有由光辐射源产生的光辐射。从样品反射的光辐射用于产生第一信号，其表示样品上的斑点的对准。响应于第一信号将X射线束对准，使得斑点与样品的目标区域重合。在对准X射线束之后从样品上的点接收的X射线光子用于产生指示目标区域的特征的第二信号。

42. 发明授权

US06351516B1 Detection of voids in semiconductor wafer processing 有权
标题翻译：检测半导体晶片加工中的空隙
公开(公告)号：US06351516B1
公开(公告)日：2002-02-26
申请号：US09461670
申请日：1999-12-14
申请人： Isaac Mazor , Long Vu
发明人： Isaac Mazor , Long Vu
IPC分类号： G01N23223
CPC分类号： H01L21/76877 , G01N23/223 , G01N2223/076 , G01N2223/648 , H01L22/12
摘要： A method for testing the deposition and/or the removal of a material within a recess on the surface of a sample. An excitation beam is directed onto a region of the sample in a vicinity of the recess, and an intensity of X-ray fluorescence, emitted from the region in a spectral range in which the material is known to fluoresce, is measured. A quantity of the material that is deposited within the recess is determined responsive to the measured intensity.
摘要翻译：一种用于测试在样品表面上的凹槽内的材料的沉积和/或去除的方法。激发光束被引导到在凹部附近的样品的区域上，并且测量从该材料已知发荧光的光谱范围内的区域发射的X射线荧光强度。根据测量的强度确定沉积在凹部内的一定量的材料。

43. 发明申请

US20120275568A1 Combining X-ray and VUV Analysis of Thin Film Layers 有权
标题翻译：结合薄膜层的X射线和VUV分析
公开(公告)号：US20120275568A1
公开(公告)日：2012-11-01
申请号：US13419497
申请日：2012-03-14
申请人： Isaac Mazor , Matthew Wormington , Ayelet Dag , Bagrat Khachatryan
发明人： Isaac Mazor , Matthew Wormington , Ayelet Dag , Bagrat Khachatryan
IPC分类号： G01N23/201
CPC分类号： G01N23/201 , G01N21/211 , G01N21/274 , G01N21/33 , G01N21/8422 , G01N21/94 , G01N21/9501 , G01N2021/8438 , G01N2223/1006 , G01N2223/61
摘要： Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.
摘要翻译：用于检查样品的装置包括X射线源，其被配置为用X射线照射样品上的位置。 X射线检测器被配置为接收从样本散射的X射线并输出指示所接收的X射线的第一信号。 VUV源配置为用VUV辐射束照射样品上的位置。 VUV检测器被配置为接收从样本反射的VUV辐射并输出指示所接收的VUV辐射的第二信号。处理器被配置为处理第一和第二信号以便测量样品的性质。

44. 发明授权

US07453985B2 Control of X-ray beam spot size 有权
标题翻译：控制X射线束斑大小
公开(公告)号：US07453985B2
公开(公告)日：2008-11-18
申请号：US11822231
申请日：2007-07-03
申请人： Isaac Mazor , David Berman
发明人： Isaac Mazor , David Berman
IPC分类号： G01N23/201
CPC分类号： G01N23/20
摘要： A method for analysis of a sample includes directing a beam of radiation to impinge on a target area on a surface of the sample along a beam axis at a plurality of different elevation angles. For each of the different angles, a respective offset of the beam in a direction transverse to the beam axis is determined. While sensing the radiation scattered from the sample at each of the different elevation angles in succession, a transverse correction is applied to at least one of the beam and the sample in order to compensate for the respective offset at each of the different elevation angles.
摘要翻译：用于分析样品的方法包括以多个不同的仰角沿着光束轴引导辐射束照射在样品的表面上的目标区域上。对于每个不同的角度，确定在横向于光束轴线的方向上的光束的相应偏移。在连续地感测在每个不同仰角处从样品散射的辐射的同时，对波束和样本中的至少一个施加横向校正，以补偿每个不同仰角处的相应偏移。

45. 发明授权

US5438413A Process for measuring overlay misregistration during semiconductor wafer fabrication 失效
标题翻译：半导体晶片制造过程中测量重叠重合的过程
公开(公告)号：US5438413A
公开(公告)日：1995-08-01
申请号：US25435
申请日：1993-03-03
申请人： Isaac Mazor , Noam Knoll , Yoram Uziel
发明人： Isaac Mazor , Noam Knoll , Yoram Uziel
IPC分类号： G01B11/00 , G03F7/20 , H01L21/027 , G01B9/02
CPC分类号： G03F7/70633
摘要： A process for measuring overlay misregistration during semiconductor wafer fabrication including the use of an interferometric microscope in combination with a camera, a wafer transport stage, and data processing electronics to form an inspection system which can utilize either broadband or narrowband light, and large or small numerical aperture (NA) to develop a series of interference images taken at different Z (vertical) planes relative to the surface under investigation or P (pathlength) positions relative to interferometer arm difference. The data in these planes is then used to calculate the magnitude and phase of the mutual coherence between the object wave and the reference wave for each pixel in the image planes, and synthetic images are formed, the brightness of which is proportional to either the complex magnitude (the Magnitude Contrast Image or MCI) or the phase of the mutual coherence as the optical pathlength (the Phase Contrast Image or PCI) is varied. The difference between synthetic images relating to target attribute position and bullet attribute position are then used as a means of detecting misregistration between the processing layer including the bullet attribute and the processing layer including the target attribute.
摘要翻译：一种用于测量半导体晶片制造期间的重叠配准的方法，包括使用干涉式显微镜与照相机，晶片传送台和数据处理电子装置组合，形成可利用宽带或窄带光以及大或小的光检测系统数值孔径（NA）以相对于正在研究的表面或相对于干涉仪臂差的P（路径长度）位置在不同的Z（垂直）平面处拍摄的一系列干涉图像。然后使用这些平面中的数据来计算像平面中每个像素的对象波和参考波之间的相互相干的幅度和相位，并且形成合成图像，其亮度与复合物幅度（大小对比度图像或MCI）或作为光程长度（相位对比图像或PCI）的相互相干的相位发生变化。然后，将与目标属性位置和子弹属性位置相关的合成图像之间的差异用作检测包括子弹属性的处理层和包括目标属性的处理层之间的重合失调的手段。

46. 发明授权

US5112129A Method of image enhancement for the coherence probe microscope with applications to integrated circuit metrology 失效
标题翻译：用于相干探针显微镜的图像增强方法用于集成电路测量
公开(公告)号：US5112129A
公开(公告)日：1992-05-12
申请号：US488583
申请日：1990-03-02
申请人： Mark Davidson , Kalman Kaufman , Isaac Mazor
发明人： Mark Davidson , Kalman Kaufman , Isaac Mazor
IPC分类号： G01B9/04 , G01B11/02
CPC分类号： G01B9/04 , G01B11/02
摘要： A method whereby the image produced in a coherence probe microscope is modified by means of a certain specific additive electronic transformation for the purpose of improving the measurement of selected features. The technique improves measurement accuracy on optically complex materials, in particular it improves the accuracy of linewidth measurement on semiconductor linewidths.
摘要翻译：为了改善所选择的特征的测量，通过某种特定的添加电子变换来修改在相干探针显微镜中产生的图像的方法。该技术提高了光学复合材料的测量精度，特别是提高了半导体线宽上线宽测量的精度。

47. 发明申请

US20080043914A1 Control of X-ray beam spot size 有权
公开(公告)号：US20080043914A1
公开(公告)日：2008-02-21
申请号：US11822231
申请日：2007-07-03
申请人： Isaac Mazor , David Berman
发明人： Isaac Mazor , David Berman
IPC分类号： G01B15/02
CPC分类号： G01N23/20
摘要： A method for analysis of a sample includes directing a beam of radiation to impinge on a target area on a surface of the sample along a beam axis at a plurality of different elevation angles. For each of the different angles, a respective offset of the beam in a direction transverse to the beam axis is determined. While sensing the radiation scattered from the sample at each of the different elevation angles in succession, a transverse correction is applied to at least one of the beam and the sample in order to compensate for the respective offset at each of the different elevation angles.

48. 发明授权

US5740953A Method and apparatus for cleaving semiconductor wafers 失效
标题翻译：用于切割半导体晶片的方法和装置
公开(公告)号：US5740953A
公开(公告)日：1998-04-21
申请号：US193188
申请日：1994-05-17
申请人： Colin Smith , Kalman Kaufman , Isaac Mazor , Elik Chen , Dan Vilenski
发明人： Colin Smith , Kalman Kaufman , Isaac Mazor , Elik Chen , Dan Vilenski
IPC分类号： H01L21/66 , B28D5/00 , H01L21/301 , B26F3/00
CPC分类号： B28D5/0094 , B28D5/0005 , B28D5/0023 , B28D5/0064 , Y10T225/10 , Y10T225/12
摘要： A method and apparatus are described for cleaving a relatively thin semiconductor wafer for inspecting a target feature on a workface thereof by: producing, on a first lateral face of the semiconductor wafer, laterally of the workface on one side of the target feature, an indentation in alignment with the target feature; and inducing by impact, in a second lateral face of the semiconductor wafer, laterally of the workface on the opposite side of the target feature, a shock wave substantially in alignment with the target feature and the indentation on the first lateral face, to split the semiconductor wafer along a cleavage plane essentially coinciding with the target feature and the indentation.
摘要翻译： PCT No.PCT / EP92 / 01867 Sec。 371日期：1994年5月17日 102（e）日期1994年5月17日PCT提交1992年8月14日PCT公布。公开号WO93 / 04497 日期1993年3月4日描述了一种方法和装置，用于通过以下步骤来切割用于检查其工作面上的目标特征的相对薄的半导体晶片：在半导体晶片的第一侧面上，在目标特征，与目标特征对齐的缩进; 并且通过冲击在所述半导体晶片的第二侧面中在所述目标特征的相对侧上的所述工作面的横向上引入基本上与所述目标特征和所述第一侧面上的所述凹陷对准的冲击波，半导体晶片沿着解理平面基本上与目标特征和凹陷重合。

49. 发明授权

US08565379B2 Combining X-ray and VUV analysis of thin film layers 有权
标题翻译：结合薄膜层的X射线和VUV分析
公开(公告)号：US08565379B2
公开(公告)日：2013-10-22
申请号：US13419497
申请日：2012-03-14
申请人： Isaac Mazor , Matthew Wormington , Ayelet Dag , Bagrat Khachatryan
发明人： Isaac Mazor , Matthew Wormington , Ayelet Dag , Bagrat Khachatryan
IPC分类号： G01N23/201
CPC分类号： G01N23/201 , G01N21/211 , G01N21/274 , G01N21/33 , G01N21/8422 , G01N21/94 , G01N21/9501 , G01N2021/8438 , G01N2223/1006 , G01N2223/61
摘要： Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.
摘要翻译：用于检查样品的装置包括X射线源，其被配置为用X射线照射样品上的位置。 X射线检测器被配置为接收从样本散射的X射线并输出指示所接收的X射线的第一信号。 VUV源配置为用VUV辐射束照射样品上的位置。 VUV检测器被配置为接收从样本反射的VUV辐射并输出指示所接收的VUV辐射的第二信号。处理器被配置为处理第一和第二信号以便测量样品的性质。

50. 发明授权

US07023954B2 Optical alignment of X-ray microanalyzers 有权
标题翻译： X射线微量分析仪的光学校准
公开(公告)号：US07023954B2
公开(公告)日：2006-04-04
申请号：US10673996
申请日：2003-09-29
申请人： Tzachi Rafaeli , Isaac Mazor
发明人： Tzachi Rafaeli , Isaac Mazor
IPC分类号： G01N23/223
CPC分类号： G01N23/22
摘要： A method for X-ray analysis of a sample includes aligning an optical radiation source with an X-ray excitation source, so that a spot on the sample that is irradiated by an X-ray beam generated by the X-ray excitation source is illuminated with optical radiation generated by the optical radiation source. Optical radiation that is reflected from the sample is used to generate a first signal, which is indicative of an alignment of the spot on the sample. The X-ray beam is aligned, responsively to the first signal, so that the spot coincides with a target area of the sample. X-ray photons received from the spot on the sample, after aligning the X-ray beam, are used in generating a second signal that is indicative of a characteristic of the target area.
摘要翻译：用于样品的X射线分析的方法包括使光辐射源与X射线激发源对准，使得由X射线激发源产生的X射线束照射的样品上的斑点被照亮具有由光辐射源产生的光辐射。从样品反射的光辐射用于产生第一信号，其表示样品上的斑点的对准。响应于第一信号将X射线束对准，使得斑点与样品的目标区域重合。在对准X射线束之后从样品上的点接收的X射线光子用于产生指示目标区域的特征的第二信号。

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