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41. 发明申请

US20130004470A1 p27 AND p21 IN GENE THERAPIES 有权
标题翻译：基因治疗中的p27和p21
公开(公告)号：US20130004470A1
公开(公告)日：2013-01-03
申请号：US13342819
申请日：2012-01-03
申请人： David T. Scadden , Tao Cheng
发明人： David T. Scadden , Tao Cheng
IPC分类号： A61K35/12 , A61K35/23 , A61P43/00 , A61K35/42 , A61K35/48 , A61K35/34 , A61K35/36
CPC分类号： C12N5/0647 , A01K2217/05 , A61K48/00 , A61K2035/124 , C07K2319/00 , C12N2501/125 , C12N2501/145 , C12N2501/23 , C12N2501/26 , C12N2501/405
摘要： The expansion of a population of stem cells or progenitor cells, or precursors thereof, may be accomplished by disrupting or inhibiting p21cip1/waf1 and/or p27, cyclin dependent kinase inhibitors. In the absence of p27 activity, progenitor cells move into the cell cycle and proliferate; whereas in the absence of p21 activity, stem cells move into the cell cycle and proliferate without losing their pluripotentiality (i.e., their ability to differentiate into the various cell lines found in the blood stream). Any type of stem cell or progenitor cell, or precursor thereof, including, but not limited to, hematopoietic, gastrointestinal, lung, neural, skin, muscle, cardiac muscle, renal, mesenchymal, embryonic, fetal, or liver cell may be used in accordance with the invention. The present invention provides a method of expanding a cell population, cells with decreased p27 and/or p21 activity, transgenic animals with a disrupted p27 and/or p21 gene, pharmaceutical compositions comprising the cells of the invention, and methods of using these cells in gene therapy (e.g., stem cell gene therapy) and bone marrow transplantation.
摘要翻译：干细胞或祖细胞群或其前体的扩增可以通过破坏或抑制p21cip1 / waf1和/或p27细胞周期蛋白依赖性激酶抑制剂来实现。在没有p27活性的情况下，祖细胞进入细胞周期并增殖; 而在没有p21活性的情况下，干细胞进入细胞周期并增殖而不丧失其多能性（即，它们分化成血液中发现的各种细胞系的能力）。包括但不限于造血，胃肠，肺，神经，皮肤，肌肉，心肌，肾，间充质，胚胎，胎儿或肝细胞的任何类型的干细胞或祖细胞或其前体可用于根据本发明。本发明提供了扩增细胞群的方法，具有降低的p27和/或p21活性的细胞，具有破坏的p27和/或p21基因的转基因动物，包含本发明细胞的药物组合物，以及使用这些细胞的方法基因治疗（如干细胞基因治疗）和骨髓移植。

42. 发明申请

US20100289119A1 INTEGRATED CAPACITOR 审中-公开
标题翻译：集成电容器
公开(公告)号：US20100289119A1
公开(公告)日：2010-11-18
申请号：US12845778
申请日：2010-07-29
申请人： Tao Cheng , Wen-Lin Chen
发明人： Tao Cheng , Wen-Lin Chen
IPC分类号： H01L27/02
CPC分类号： H01L28/86
摘要： According to the preferred embodiment, an integrated capacitor having a key-shaped structure is provided. The integrated capacitor comprises a first pair of key-shaped metal patterns and a second pair of key-shaped metal patterns. The first pair of key-shaped metal patterns engages with the second pair of key-shaped metal patterns, and a dielectric layer is situated therebetween.
摘要翻译：根据优选实施例，提供具有键状结构的集成电容器。集成电容器包括第一对键状金属图案和第二对键形金属图案。第一对键状金属图案与第二对键状金属图案接合，并且介电层位于它们之间。

43. 外观设计

USD614537S1 All terrain vehicle 有权
公开(公告)号：USD614537S1
公开(公告)日：2010-04-27
申请号：US29331539
申请日：2009-01-27
申请人： Tao Cheng , Benwei Yang
设计人： Tao Cheng , Benwei Yang

44. 发明申请

US20100037637A1 OIL CIRCULATION OBSERVER FOR HVAC SYSTEMS 有权
标题翻译：用于暖通空调系统的油循环观测器
公开(公告)号：US20100037637A1
公开(公告)日：2010-02-18
申请号：US12603213
申请日：2009-10-21
申请人： Xiang-Dong He , H. Harry Asada , Tao Cheng
发明人： Xiang-Dong He , H. Harry Asada , Tao Cheng
IPC分类号： F25B41/00 , G01K13/00 , F25B1/00
CPC分类号： F25B31/002 , F25B2500/16 , F25B2700/03
摘要： An innovative oil observer for estimating oil concentration and oil amount in a refrigerant compressor in a vapor compression cycle is described. The invention ensures the safe operation of the compressor by ensuring that adequate lubricant is present in the compressor. This oil observer is based on oil models for components of air conditioning and refrigeration systems. Oil models for HVAC components estimate oil mass and refrigerant mass in each component. With all component oil models and heat exchanger observers which provide the estimation of inner geometric lengths of two-phase flow heat exchangers, a system-level oil observer is established by integrating all component models. Experimental testing has been conducted to verify the performance of this oil observer for steady state operation and dynamic processes. The invention has direct applications in residential and commercial air conditioning and refrigeration systems.
摘要翻译：描述了一种用于估计蒸气压缩循环中的制冷剂压缩机中的油浓度和油量的创新油观察器。本发明通过确保压缩机中存在足够的润滑剂来确保压缩机的安全运行。这个石油观察员是基于空调和制冷系统部件的油模型。用于HVAC组件的油模型估计每个部件中的油质量和制冷剂质量。通过对所有组分油模型和热交换器观测器提供两相流动热交换器的内部几何长度的估计，通过集成所有组件模型来建立系统级油观测器。已经进行了实验测试，以验证该油观测器的稳态运行和动态过程的性能。本发明在住宅和商业空调和制冷系统中直接应用。

45. 发明申请

US20090236637A1 POWER AND GROUND ROUTING OF INTEGRATED CIRCUIT DEVICES WITH IMPROVED IR DROP AND CHIP PERFORMANCE 有权
标题翻译：具有改进的红外线和芯片性能的集成电路设备的电源和接地布线
公开(公告)号：US20090236637A1
公开(公告)日：2009-09-24
申请号：US12052735
申请日：2008-03-21
申请人： Ching-Chung Ko , Tao Cheng , Tien-Yueh Liu , Dar-Shii Chou , Peng-Cheng Kao
发明人： Ching-Chung Ko , Tao Cheng , Tien-Yueh Liu , Dar-Shii Chou , Peng-Cheng Kao
IPC分类号： H01L27/10
CPC分类号： H01L23/5286 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit chip with reduced IR drop and improved chip performance is disclosed. The integrated circuit chip includes a semiconductor substrate having thereon a plurality of inter-metal dielectric (IMD) layers and a plurality of copper metal layers embedded in respective the plurality of IMD layers; a first passivation layer overlying the plurality of IMD layers and the plurality of copper metal layers; a first power/ground ring of a circuit block of the integrated circuit chip formed in a topmost layer of the plurality of copper metal layers; a second power/ground ring of the circuit block of the integrated circuit chip formed in an aluminum layer over the first passivation layer; and a second passivation layer covering the second power/ground ring and the first passivation layer.
摘要翻译：公开了具有降低的IR降低和芯片性能改善的集成电路芯片。集成电路芯片包括其上具有多个金属间电介质（IMD）层和嵌入在多个IMD层中的多个铜金属层的半导体衬底; 覆盖所述多个IMD层和所述多个铜金属层的第一钝化层; 所述集成电路芯片的电路块的第一电源/接地环形成在所述多个铜金属层的最上层中; 所述集成电路芯片的电路块的第二电源/接地环形成在所述第一钝化层上的铝层中; 以及覆盖所述第二电源/接地环和所述第一钝化层的第二钝化层。

46. 发明授权

US07491584B2 ESD protection device in high voltage and manufacturing method for the same 有权
标题翻译： ESD保护器件在高压及制造方法相同
公开(公告)号：US07491584B2
公开(公告)日：2009-02-17
申请号：US11186857
申请日：2005-07-22
申请人： Ding-Jeng Yu , Tao Cheng , Chao-Chih Chiu
发明人： Ding-Jeng Yu , Tao Cheng , Chao-Chih Chiu
IPC分类号： H01L21/82 , H01L21/8222 , H01L21/8228
CPC分类号： H01L27/0259 , H01L27/0664
摘要： Electrostatic discharge (ESD) protection device in high voltage and the relevant manufacturing method is disclosed. The mentioned ESD protection device is disposed to bridge a ground and an input connected with an inner circuit to be protected. In which, the ESD protection device for high voltage comprises at least one PNP transistor and at least one diode connected in parallel, and an ESD discharging path is formed thereby. The PNP transistor is formed with an adjacent heavily doped P-type semiconductor zone (P+), lightly doped N-type semiconductor zone (N−), and a P-type semiconductor substrate. The diode is formed with an adjacent lightly doped N-type semiconductor zone and a light doped P-type semiconductor zone.
摘要翻译：公开了高压静电放电（ESD）保护装置及相关制造方法。上述ESD保护装置被设置成桥接地面和与要保护的内部电路连接的输入。其中，用于高电压的ESD保护装置包括至少一个PNP晶体管和至少一个二极管并联，并且由此形成ESD放电路径。 PNP晶体管形成有相邻的重掺杂P型半导体区（P +），轻掺杂的N型半导体区（N）和P型半导体衬底。二极管形成有相邻的轻掺杂N型半导体区和掺杂P型半导体区。

47. 发明申请

US20070096269A1 LEADFRAME FOR SEMICONDUCTOR PACKAGES 审中-公开
标题翻译：半导体封装的LEADFRAME
公开(公告)号：US20070096269A1
公开(公告)日：2007-05-03
申请号：US11539239
申请日：2006-10-06
申请人： Tao Cheng
发明人： Tao Cheng
IPC分类号： H01L23/495
CPC分类号： H05K1/025 , G06F17/5077 , H01L23/49541 , H01L23/64 , H01L24/48 , H01L24/49 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/14 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A leadframe for semiconductor packages. The leadframe includes a die pad, a side rail, a tie bar, and a plurality of leads. The side rail is around the die pad. The tie bar connects the die pad and the side rail. The leads extend from the side rail to close proximity to the die pad. Each lead has a corresponding lead relative to a predetermined center line. A predetermined pair of corresponding leads are substantial asymmetrical with each other in appearance relative to the predetermined center line.
摘要翻译：半导体封装的引线框架。引线框架包括管芯焊盘，侧轨，连杆和多个引线。侧轨位于管芯垫周围。连接杆连接管芯焊盘和侧轨。引线从侧轨延伸到靠近管芯焊盘。每个引线相对于预定的中心线具有相应的引线。相对于预定的中心线，预定的一对对应的引线在外观上彼此大致不对称。

48. 发明授权

US07203050B2 NPN Darlington ESD protection circuit 有权
标题翻译： NPN达林顿ESD保护电路
公开(公告)号：US07203050B2
公开(公告)日：2007-04-10
申请号：US10604354
申请日：2003-07-14
申请人： Tao Cheng , Ding-Jeng Yu
发明人： Tao Cheng , Ding-Jeng Yu
IPC分类号： H02H3/22
CPC分类号： H01L27/0266 , H01L27/0259
摘要： An electrostatic discharge protection (ESD) circuit includes an NPN Darlington circuit and an n-type metal oxide semiconductor (NMOS) transistor. The drain of NMOS transistor is connected to the input end of the NPN Darlington circuit. The source of NMOS transistor is connected to the control end of the NPN Darlington circuit. The gate of NMOS transistor is connected to the output end of the NPN Darlington circuit.
摘要翻译：静电放电保护（ESD）电路包括NPN达林顿电路和n型金属氧化物半导体（NMOS）晶体管。 NMOS晶体管的漏极连接到NPN达林顿电路的输入端。 NMOS晶体管的源极连接到NPN达林顿电路的控制端。 NMOS晶体管的栅极连接到NPN达林顿电路的输出端。

49. 发明授权

US06479872B1 Dynamic substrate-coupled electrostatic discharging protection circuit 有权
标题翻译：动态衬底耦合静电放电保护电路
公开(公告)号：US06479872B1
公开(公告)日：2002-11-12
申请号：US09221959
申请日：1998-12-28
申请人： Tao Cheng , Jian-Hsing Lee , Lin-June Wu
发明人： Tao Cheng , Jian-Hsing Lee , Lin-June Wu
IPC分类号： H01L2362
CPC分类号： H01L27/0266
摘要： A dynamic source coupled ESD protection circuit that dissipates an ESD voltage coupled to an electrical contact pad to protect internal circuits on an integrated circuits chip is described. The ESD protection circuit lowers the snapback voltage of the ESD protection circuit to allow a thinner gate oxide within the internal circuits of the integrated circuit chip. The dynamic substrate coupled electrostatic discharge protection circuit consists of a gated MOS transistor, a capacitor, and a resistor. The gated MOS transistor has a drain region connected to the electrical contact pad. The gate and source are connected to a power supply voltage source. The power supply voltage source will either be a substrate biasing voltage or ground reference point for a gated NMOS transistor. The power supply voltage source will be the power supply voltage source VDD for the gated PMOS transistor. The capacitor has a first plate connected to the electrical contact pad, and a second plate connected to said substrate bulk region of the MOS transistor. The resistor is a polycrystalline silicon resistor that is connected between the second plate of the capacitor and the power supply voltage source.
摘要翻译：描述了动态源耦合ESD保护电路，其消耗耦合到电接触焊盘的ESD电压以保护集成电路芯片上的内部电路。 ESD保护电路降低ESD保护电路的回跳电压，以便在集成电路芯片的内部电路内允许更薄的栅极氧化物。动态衬底耦合静电放电保护电路由门控MOS晶体管，电容器和电阻组成。门控MOS晶体管具有连接到电接触焊盘的漏极区域。栅极和源极连接到电源电压源。电源电压源将是门控NMOS晶体管的衬底偏置电压或接地参考点。电源电压源将是门控PMOS晶体管的电源电压源VDD。电容器具有连接到电接触焊盘的第一板和连接到MOS晶体管的所述衬底主体区域的第二板。电阻器是连接在电容器的第二板和电源电压源之间的多晶硅电阻器。

50. 外观设计

USD964755S1 Coat hanger 有权
公开(公告)号：USD964755S1
公开(公告)日：2022-09-27
申请号：US29819403
申请日：2021-12-15
申请人： Tao Cheng
设计人： Tao Cheng

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