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41. 发明申请

US20060121691A1 Method of manufacturing single crystal Si film 有权
公开(公告)号：US20060121691A1
公开(公告)日：2006-06-08
申请号：US11071175
申请日：2005-03-04
申请人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.

42. 发明申请

US20060084204A1 Method of manufacturing a thin film transistor 有权
公开(公告)号：US20060084204A1
公开(公告)日：2006-04-20
申请号：US11199272
申请日：2005-08-09
申请人： Huaxiang Yin , Wenxu Xianyu , Takashi Noguchi , Hans Cho , Ji-sim Jung
发明人： Huaxiang Yin , Wenxu Xianyu , Takashi Noguchi , Hans Cho , Ji-sim Jung
IPC分类号： H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/785
摘要： A method of manufacturing a thin film transistor is provided. The method includes forming an amorphous silicon layer on a substrate, forming a source region, a drain region, and a region of a plurality of channels electrically interposed between the source region and the drain region by patterning the amorphous silicon layer, annealing a region of the channels, sequentially forming a gate oxide film and a gate electrode on a channel surface, and doping the source region and the drain region.

43. 发明授权

US07816678B2 Organic light emitting display with single crystalline silicon TFT and method of fabricating the same 有权
标题翻译：具有单晶硅TFT的有机发光显示器及其制造方法
公开(公告)号：US07816678B2
公开(公告)日：2010-10-19
申请号：US12175778
申请日：2008-07-18
申请人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L35/24 , H01L51/00 , H01L31/00 , H01L21/00 , H01L51/40
CPC分类号： H01L27/1266 , H01L27/1255 , H01L27/3244 , H01L29/78603
摘要： Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.
摘要翻译：提供一种有机发光显示器，其中在塑料基板上形成包括开关晶体管和由单晶硅形成的驱动晶体管的2T-1C结构的半导体电路单元。制造单晶硅的方法包括：在晶体生长板上生长单晶硅层至预定厚度; 在单晶硅层上沉积缓冲层; 通过例如从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附接到缓冲层; 以及通过从晶体生长板加热分隔层来释放单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

44. 发明授权

US07772711B2 Semiconductor device including single crystal silicon layer 有权
标题翻译：半导体器件包括单晶硅层
公开(公告)号：US07772711B2
公开(公告)日：2010-08-10
申请号：US11430117
申请日：2006-05-09
申请人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaoxin Zhang
发明人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaoxin Zhang
IPC分类号： H01L27/11
CPC分类号： H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L29/66772 , H01L29/7842 , Y10S257/903
摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
摘要翻译：包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。此外，P-MOS单晶TFT可以包括具有（100）的晶面并且晶体方向<100的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层单晶TFT。

45. 发明授权

US07714330B2 Si nanowire substrate 有权
标题翻译： Si纳米线基板
公开(公告)号：US07714330B2
公开(公告)日：2010-05-11
申请号：US11889471
申请日：2007-08-14
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/04
CPC分类号： H01L29/78654 , H01L29/0673 , H01L29/66772 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/938 , Y10T428/26
摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译：具有其中在衬底上形成具有细线宽度的硅纳米线膜的结构的硅纳米线衬底，其制造方法以及使用其制造薄膜晶体管的方法。制造硅纳米线基板的方法包括：准备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图形化成带状，减小线宽通过对绝缘膜的至少一个侧面进行底切蚀刻来绝缘膜，并且通过使硅膜熔化和结晶，在绝缘膜的上表面上形成自对准硅纳米线膜。

46. 发明申请

US20100112763A1 Semiconductor device including gate stack formed on inclined surface and method of fabricating the same 有权
标题翻译：包括在倾斜表面上形成的栅叠层的半导体器件及其制造方法
公开(公告)号：US20100112763A1
公开(公告)日：2010-05-06
申请号：US12654866
申请日：2010-01-07
申请人： Xiaoxin Zhang , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Huaxiang Yin
发明人： Xiaoxin Zhang , Wenxu Xianyu , Takashi Noguchi , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L21/336
CPC分类号： H01L21/823412 , H01L21/823456 , H01L21/823807 , H01L21/82385
摘要： A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.
摘要翻译：半导体器件包括晶体管。晶体管包括具有倾斜表面的基板，从倾斜表面的下部延伸的第一上表面和从倾斜表面的上端延伸的第二上表面。栅极堆叠结构形成在倾斜表面上并且包括栅电极。形成在第一和第二上表面中的一个上的第一杂质区域接触栅极堆叠结构。形成在第二上表面上的第二杂质区域接触栅堆叠结构。第一和第二杂质区之间的通道在结晶方向上沿着倾斜表面形成。

47. 发明授权

US07557411B2 Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same 有权
标题翻译：半导体绝缘体上的结构，使用其的半导体器件及其制造方法
公开(公告)号：US07557411B2
公开(公告)日：2009-07-07
申请号：US11397866
申请日：2006-04-05
申请人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin , Xiaoxin Zhang
发明人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L27/01 , H01L27/12 , H01L31/392
CPC分类号： H01L29/78687 , H01L29/66742 , H01L29/78603
摘要： Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline substrate formed of a first semiconductor material, a first insulating layer formed on the substrate and having at least one window exposing a portion of the substrate, a first epitaxial growth region formed on a surface of the substrate exposed by the window and formed of at least one of the first semiconductor material and a second semiconductor material, and a first single-crystalline layer formed on the first insulating layer and the first epitaxial growth region and formed of the second semiconductor material, and crystallized using a surface of the first epitaxial growth region as a seed layer for crystallization.
摘要翻译：绝缘体上半导体（SOI）结构，使用其的半导体器件及其制造方法，更具体地说，涉及在绝缘层上具有单晶（例如锗（x-Ge））层的结构，使用其的半导体器件及其制造方法。 SOI结构可以包括由第一半导体材料形成的单晶衬底，形成在衬底上的第一绝缘层，并且具有暴露衬底的一部分的至少一个窗口，形成在衬底表面上的第一外延生长区域由窗口露出并由第一半导体材料和第二半导体材料中的至少一个形成，以及形成在第一绝缘层和第一外延生长区上并由第二半导体材料形成的第一单晶层，并且晶化使用第一外延生长区域的表面作为晶种层进行结晶。

48. 发明授权

US07297615B2 Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same 有权
公开(公告)号：US07297615B2
公开(公告)日：2007-11-20
申请号：US11341519
申请日：2006-01-30
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： C30B1/02 , H01L21/20
CPC分类号： H01L29/78654 , H01L29/0673 , H01L29/66772 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/938 , Y10T428/26
摘要： A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

49. 发明申请

US20060134894A1 Method of manufacturing polycrystalline Si film and manufacturing stacked transistor using the same 有权
标题翻译：制造多晶Si膜的方法和使用其制造堆叠晶体管
公开(公告)号：US20060134894A1
公开(公告)日：2006-06-22
申请号：US11283874
申请日：2005-11-22
申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
发明人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Kyung-bae Park
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02675 , H01L21/2026 , H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/12 , H01L27/1281
摘要： A method of manufacturing a polycrystalline Si film and a method of manufacturing a stacked transistor are provided. The method of manufacturing the polycrystalline Si film includes preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed, forming an interconnection metal line separated from the gate, forming an insulating layer that covers the transistor and the interconnection metal line, forming an amorphous silicon layer on the insulating layer; and annealing the amorphous silicon layer.
摘要翻译：提供一种制造多晶Si膜的方法和制造堆叠晶体管的方法。制造多晶Si膜的方法包括制备绝缘基板，其上形成有依次形成的多晶硅，具有多晶硅有源层，栅极绝缘层和栅极，形成与栅极分离的互连金属线，形成覆盖晶体管和互连金属线的绝缘层，在绝缘层上形成非晶硅层; 并退火非晶硅层。

50. 发明申请

US20060068507A1 Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same 审中-公开
标题翻译：形成材料膜的方法，形成电容器的方法以及使用其形成半导体存储器件的方法
公开(公告)号：US20060068507A1
公开(公告)日：2006-03-30
申请号：US11233363
申请日：2005-09-23
申请人： Wenxu Xianyu , Takashi Noguchi , Hans Cho , Jang-Yeon Kwon , Huaxiang Yin
发明人： Wenxu Xianyu , Takashi Noguchi , Hans Cho , Jang-Yeon Kwon , Huaxiang Yin
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： H01L21/02356 , H01L21/02197 , H01L21/31691 , H01L21/84 , H01L27/11502 , H01L27/12
摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550°C.
摘要翻译：提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以在低于约500℃至约550℃的温度下形成。

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