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41. 发明授权

US07062347B2 Maintenance method and system for plasma processing apparatus 有权
公开(公告)号：US07062347B2
公开(公告)日：2006-06-13
申请号：US10434213
申请日：2003-05-09
申请人： Hideyuki Yamamoto , Toshio Masuda , Shoji Ikuhara , Akira Kagoshima , Junichi Tanaka
发明人： Hideyuki Yamamoto , Toshio Masuda , Shoji Ikuhara , Akira Kagoshima , Junichi Tanaka
IPC分类号： G06F19/00
CPC分类号： H01J37/32862 , H01J37/32935
摘要： For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.

42. 发明申请

US20050236364A1 Etching system and etching method 审中-公开
标题翻译：蚀刻系统和蚀刻方法
公开(公告)号：US20050236364A1
公开(公告)日：2005-10-27
申请号：US11154698
申请日：2005-06-17
申请人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
发明人： Akira Kagoshima , Motohiko Yoshigai , Hideyuki Yamamoto , Daisuke Shiraishi , Junichi Tanaka , Kenji Tamaki , Natsuyo Morioka
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/3213 , H01L21/66 , H01L21/302
CPC分类号： H01L21/67253 , G05B2219/45212 , H01J37/32935 , H01L21/32137 , H01L22/20
摘要： An etching method for subjecting a single film to be etched to etching comprised of a plurality of etching steps based on respectively different recipes, includes steps of generating and fixing a recipe which is a preset recipe to be applied to an etching step of the plurality of etching steps which affects an underlying film making contact with the single film to be etched, generating different recipes other than the preset recipe to be applied to other etching steps of the plurality of etching steps, wherein at least one of the different recipes for the other etching steps is generated on the basis of processed results, and conducting etching of the single film according to the recipes generated.
摘要翻译：一种蚀刻方法，用于对单个膜进行蚀刻以基于各自不同的配方的多个蚀刻步骤进行的蚀刻，包括以下步骤：产生和固定作为要应用于多个蚀刻步骤的蚀刻步骤的预设配方的配方蚀刻步骤，其影响与待蚀刻的单个膜接触的底层膜，产生除了应用于多个蚀刻步骤的其它蚀刻步骤的预设配方之外的不同配方，其中至少一个不同的配方用于另一个基于处理结果产生蚀刻步骤，并根据生成的配方对单个膜进行蚀刻。

43. 发明授权

US06908529B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06908529B2
公开(公告)日：2005-06-21
申请号：US10087771
申请日：2002-03-05
申请人： Hideyuki Yamamoto , Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi , Junichi Tanaka
发明人： Hideyuki Yamamoto , Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi , Junichi Tanaka
IPC分类号： B01J19/08 , H01J37/32 , H01L21/00 , H01L21/3065 , H05H1/00 , C23C16/00 , C23F1/00
CPC分类号： H01L21/67253 , H01J37/32935 , H01J37/32972 , H01L21/67069
摘要： A plasma processing system for processing a workpiece by using plasma generated in a chamber, includes a light transmissive member disposed in the chamber, the workpiece being disposed inside the light transmissive member; and a light receiving unit mounted on the chamber for receiving light inside the light transmissive member, wherein a state of processing the workpiece is detected by using data detected from light inside the light transmissive member before processing the workpiece and data detected from light inside the light transmissive member generated during processing the workpiece. A plasma processing method and system is provided which facilitates an operation of the system and executes a reliable processing.
摘要翻译：一种用于通过使用在室中产生的等离子体处理工件的等离子体处理系统，包括设置在所述室中的透光构件，所述工件设置在所述透光构件内部; 以及安装在所述室上的受光单元，用于在所述透光构件内部接收光，其中，在处理所述工件之前，通过使用从所述透光构件内的光检测到的数据来检测所述工件的处理状态和从所述光内的光检测的数据在处理工件期间产生的透射构件。提供了一种等离子体处理方法和系统，其有助于系统的操作并执行可靠的处理。

44. 发明授权

US06841032B2 Plasma processing apparatus for adjusting plasma processing through detecting plasma processing state within chamber 失效
标题翻译：用于通过检测室内的等离子体处理状态来调节等离子体处理的等离子体处理装置
公开(公告)号：US06841032B2
公开(公告)日：2005-01-11
申请号：US10094714
申请日：2002-03-12
申请人： Shoji Ikuhara , Junichi Tanaka , Hideyuki Yamamoto
发明人： Shoji Ikuhara , Junichi Tanaka , Hideyuki Yamamoto
IPC分类号： G01N21/71 , H01J37/32 , H05H1/00 , C23C16/00
CPC分类号： H01J37/32935 , G01N21/71
摘要： A plasma processing apparatus for processing an object arranged within a chamber by utilizing the plasma caused within the chamber, the apparatus including: a sensor having plural lines of a plurality of elements for detecting a plurality of strip-like beams; an application unit for applying the plurality of strip-like beams generated from the light within the chamber in such a way that each of the illumination faces of the strip-like beams makes an angle with respect to each of the lines of the elements; and a control unit for adjusting the operation of the apparatus using outputs from the sensor.
摘要翻译：一种等离子体处理装置，用于通过利用在室内产生的等离子体来处理设置在室内的物体，该装置包括：具有多条元件的传感器，用于检测多个条状梁; 应用单元，用于将所述多个从所述光中产生的条形束施加在所述室内，使得所述条状梁的每个照明面相对于所述元件的每条线成一角度; 以及控制单元，用于使用来自传感器的输出来调节设备的操作。

45. 发明授权

US06745096B2 Maintenance method and system for plasma processing apparatus etching and apparatus 有权
标题翻译：等离子体处理设备蚀刻和设备的维护方法和系统
公开(公告)号：US06745096B2
公开(公告)日：2004-06-01
申请号：US09946621
申请日：2001-09-06
申请人： Hideyuki Yamamoto , Toshio Masuda , Shoji Ikuhara , Akira Kagoshima , Junichi Tanaka
发明人： Hideyuki Yamamoto , Toshio Masuda , Shoji Ikuhara , Akira Kagoshima , Junichi Tanaka
IPC分类号： G06F1900
CPC分类号： H01J37/32862 , H01J37/32935
摘要： For maintenance after wet cleaning of a plasma processing apparatus which processes a specimen in a vacuum processing chamber by using a plasma, when restoration processing after the wet cleaning of members configuring the vacuum processing chamber is performed with the vacuum processing chamber opened to the atmosphere, it is automatically or semiautomatically judged whether the restoration processing is appropriate or not according to a predetermined optimum sequence inherent in the apparatus, and the next processing is started automatically or semiautomatically according to the results.
摘要翻译：为了在通过使用等离子体处理真空处理室中的样品的等离子体处理装置进行湿式清洗之后进行维护，当对真空处理室构成的构件进行湿式清洗之后的恢复处理是在对大气开放的真空处理室的情况下进行的，根据设备固有的预定最佳顺序，自动或半自动判断恢复处理是否合适，根据结果自动或半自动地开始下一个处理。

46. 发明申请

US20060199288A1 Data processing apparatus for semiconductor processing apparatus 审中-公开
标题翻译：半导体处理装置的数据处理装置
公开(公告)号：US20060199288A1
公开(公告)日：2006-09-07
申请号：US11429199
申请日：2006-05-08
申请人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
发明人： Junichi Tanaka , Toshio Masuda , Akira Kagoshima , Shoji Ikuhara , Hideyuki Yamamoto
IPC分类号： H01L21/66
CPC分类号： H01L21/67276 , H01L22/20 , H01L22/34
摘要： A semiconductor processing method in which a sample wafer is disposed inside of a chamber for processing and process data is detected by using a generated plasma generated which includes data concerning emission light generated. Information data corresponding to the processing data is selectively sent to one of first and second data storing devices in accordance with a predetermined condition. The selective sending of the information data includes selectively sending the information data to one of the first and second data storing devices until an amount of the information data which has been sent to and stored in the one of the storing devices reaches a predetermined amount of processing of the sample wafer as the predetermined condition, and thereafter selectively sending the information data corresponding to a succeeding process to the other of the first and second data storing devices.
摘要翻译：通过使用包括关于所产生的发光的数据的产生的所生成的等离子体来检测其中样品晶片设置在用于处理和处理数据的室内的半导体处理方法。与处理数据相对应的信息数据根据预定条件选择性地发送到第一和第二数据存储装置之一。信息数据的选择性发送包括有选择地将信息数据发送到第一和第二数据存储装置中的一个，直到发送到存储装置中的一个的信息数据量达到预定量的处理的样品晶片作为预定条件，然后选择性地将对应于后续处理的信息数据发送到第一和第二数据存储装置中的另一个。

47. 发明授权

US07010374B2 Method for controlling semiconductor processing apparatus 有权
标题翻译：半导体处理装置的控制方法
公开(公告)号：US07010374B2
公开(公告)日：2006-03-07
申请号：US10377827
申请日：2003-03-04
申请人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
发明人： Junichi Tanaka , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L21/67028 , H01L21/67069 , Y10S438/905
摘要： A method for controlling a semiconductor processing apparatus including a vacuum processing chamber, a plasma apparatus for generating plasma inside the vacuum processing chamber, and a process controller for controlling a process by holding a process recipe including plasma cleaning of inside of the vacuum processing chamber constant, comprises the steps of detecting process abnormality of the process on the basis of sensor data detected by sensors arranged in the semiconductor processing apparatus, and executing a recovery step for removing deposition deposited inside the vacuum processing chamber when abnormality is detected.
摘要翻译：一种用于控制包括真空处理室的真空处理室，用于在真空处理室内产生等离子体的等离子体装置的半导体处理装置的方法，以及用于通过保持包括真空处理室内部的等离子体清洗常数的处理配方来控制处理的处理控制器包括以下步骤：根据布置在半导体处理装置中的传感器检测到的传感器数据来检测处理异常，并且当检测到异常时，执行用于去除沉积在真空处理室内的沉积物的恢复步骤。

48. 发明授权

US06866744B2 Semiconductor processing apparatus and a diagnosis method therefor 失效
标题翻译：半导体处理装置及其诊断方法
公开(公告)号：US06866744B2
公开(公告)日：2005-03-15
申请号：US10229072
申请日：2002-08-28
申请人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
发明人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
IPC分类号： C23C16/509 , C23C16/52 , H01J37/32 , H01L21/00 , H05H1/00 , B08B3/12 , C23C16/00
CPC分类号： H01L21/67288 , C23C16/5096 , C23C16/52 , H01J37/32935
摘要： A semiconductor processing apparatus for applying plasma treatment to a sample arranged in a vacuum process chamber includes a plasma generator for generating plasma inside the vacuum process chamber and a process gas supply for introducing a process gas into the vacuum process chamber. The apparatus further includes an oscillator for imparting mechanical oscillation to the semiconductor processing apparatus, a receiver for detecting mechanical oscillation generated by the oscillator in the semiconductor processing apparatus as a signal, and an analyzer for analyzing the detected signal to diagnose whether the vacuum process chamber is normally assembled.
摘要翻译：用于对布置在真空处理室中的样品施加等离子体处理的半导体处理装置包括：用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室的工艺气体供应。该装置还包括用于向半导体处理装置施加机械振荡的振荡器，用于检测由半导体处理装置中的振荡器产生的机械振荡作为信号的接收器，以及用于分析检测信号以诊断真空处理室正常组装。

49. 发明申请

US20050054205A1 Mask trimming apparatus and mask trimming method 审中-公开
标题翻译：面罩修剪装置和面罩修剪方法
公开(公告)号：US20050054205A1
公开(公告)日：2005-03-10
申请号：US10790212
申请日：2004-03-02
申请人： Junichi Tanaka , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
发明人： Junichi Tanaka , Hideyuki Yamamoto , Akira Kagoshima , Daisuke Shiraishi
IPC分类号： H01L21/3065 , G03F7/40 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/3213 , H01L21/461 , H01L21/66
CPC分类号： H01L21/67069 , G03F7/40 , H01L21/0273 , H01L21/31138 , H01L21/32139 , H01L21/67253 , H01L22/26
摘要： A plasma etching apparatus and method are provided to obtain an accurate dimension after trimming based on an amount of roughness of a mask edge or an amount of radicals in plasma. A wafer on the surface of which a desirably patterned mask for etching is formed is processed in a plasma etching process chamber and the mask is trim-treated by plasma etching so as to reduce the patterned mask width. The apparatus includes a plasma monitor for measuring an amount of radicals in the plasma process chamber, and a trimming condition calculator for calculating a time required for the trimming to obtain a desired mask width, based on a pre-measured width dimension of the patterned mask and a pre-measured amount of roughness of a mask edge and the radical amount measured by the plasma monitor. The trimming is performed for the time calculated by the trimming condition calculator.
摘要翻译：提供了一种等离子体蚀刻装置和方法，用于基于掩模边缘的粗糙度或等离子体中的自由基的量来修整后的精确尺寸。在其表面上形成用于蚀刻的期望图案化掩模的晶片在等离子体蚀刻处理室中进行处理，并且通过等离子体蚀刻对掩模进行修整处理，以便减小图案化掩模宽度。该装置包括用于测量等离子体处理室中的自由基量的等离子体监视器，以及修剪条件计算器，用于基于图案化掩模的预先测量的宽度尺寸来计算修剪以获得期望的掩模宽度所需的时间以及掩模边缘的预测量的粗糙度和由等离子体监视器测量的自由基量。在由修整条件计算器计算的时间进行修整。

50. 发明授权

US09973763B2 Image processing device and image processing method for applying filtering determination processes in parallel 有权
公开(公告)号：US09973763B2
公开(公告)日：2018-05-15
申请号：US13990893
申请日：2011-12-02
申请人： Masaru Ikeda , Junichi Tanaka , Yoshitaka Morigami
发明人： Masaru Ikeda , Junichi Tanaka , Yoshitaka Morigami
IPC分类号： H04N7/18 , H04N19/176 , H04N19/117 , H04N19/182 , H04N19/80 , H04N19/436 , H04N19/86 , H04N19/597 , H04N19/36
CPC分类号： H04N19/176 , H04N19/117 , H04N19/182 , H04N19/36 , H04N19/436 , H04N19/597 , H04N19/80 , H04N19/86
摘要： An image processing device including a decoding section configured to decode an image from an encoded stream, a determination section configured to perform determination processes of determining whether to apply a deblocking filter to neighboring blocks neighboring across a block boundary within an image to be decoded by the decoding section, a filtering section configured to apply a deblocking filter to neighboring blocks to which the determination section has determined to apply a deblocking filter, and a control section configured to allow the determination section to perform the determination processes for a vertical block boundary and a horizontal block boundary using pixels of the neighboring blocks of a reconstruct image as reference pixels.

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