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    • 43. 发明申请
    • Method for manufacturing semiconductor device, and polishing apparatus
    • 半导体装置的制造方法及研磨装置
    • US20100035438A1
    • 2010-02-11
    • US12462249
    • 2009-07-30
    • Noritaka KamikuboHiroshi Yamauchi
    • Noritaka KamikuboHiroshi Yamauchi
    • H01L21/3105B24B49/04B24B7/22
    • H01L21/31053
    • An interlayer insulating film is formed on a semiconductor substrate having a semiconductor element formed thereon. At this time, there are protrusions higher than surroundings thereof and non-protruding portions lower than the protrusions on the surface of the interlayer insulating film. First, a first polishing process is carried out on the surface of the interlayer insulating film with use of a first abrasive having non-Prestonian properties produced by mixing abrasive materials including abrasive grains, a polymer additive and water at a predetermined first mixture ratio. Then, after the first abrasive process shifts to an automatically stopping state, a second polishing process is carried out on the surface of the interlayer insulating film with use of a second abrasive having the concentration of polymer additive lower than that of the first abrasive and produced by mixing the abrasive materials at a second mixture ratio different from the first mixture ratio.
    • 在其上形成有半导体元件的半导体衬底上形成层间绝缘膜。 此时,具有高于其周围的突出部和比层间绝缘膜的表面上的突起低的非突出部。 首先,使用通过以预定的第一混合比混合包括磨料颗粒,聚合物添加剂和水的研磨材料而产生的非Prestonian性质的第一研磨剂,在层间绝缘膜的表面上进行第一抛光工艺。 然后,在第一研磨过程转变到自动停止状态之后,使用聚合物添加剂的浓度低于第一磨料的浓度的第二研磨剂在层间绝缘膜的表面上进行第二抛光处理, 通过以与第一混合比不同的第二混合比混合研磨材料。
    • 46. 发明授权
    • Semiconductor light receiving device and manufacturing method for the same
    • 半导体光接收装置及其制造方法
    • US07045872B2
    • 2006-05-16
    • US10819772
    • 2004-04-06
    • Hiroshi Yamauchi
    • Hiroshi Yamauchi
    • H01L31/00
    • H01L27/14689H01L27/14806
    • An object of the present invention is to provide a highly sensitive semiconductor light receiving device wherein the efficiency of light convergence into the light receiving region has been increased. The semiconductor light receiving device includes a light receiving region formed on a semiconductor substrate, and an electrode formed in a peripheral portion of the light receiving region on the semiconductor substrate for transferring a charge generated through photoelectric conversion in the light receiving region to the outside of the light receiving region, wherein a part of or the entirety of the peripheral portion of the electrode is processed so as to recede toward the center of the electrode as the electrode is away from the semiconductor substrate. In addition, two types of etching of isotropic etching and anisotropic etching are used at the time of the pattern formation of the electrode at least once, respectively.
    • 本发明的目的是提供一种高灵敏度的半导体光接收装置,其中光收敛区域的光收敛效率已经提高。 半导体光接收装置包括形成在半导体衬底上的光接收区域和形成在半导体衬底上的光接收区域的周边部分中的电极,用于将在光接收区域中通过光电转换产生的电荷传送到 所述光接收区域,其中,当所述电极远离所述半导体衬底时,所述电极的周边部分的一部分或整体被处理以朝向所述电极的中心后退。 此外,在电极图案形成时,分别使用两种类型的各向同性蚀刻和各向异性蚀刻蚀刻。