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    • 50. 发明授权
    • Optical recording medium and optical recording method
    • 光记录介质和光记录方法
    • US06333913B1
    • 2001-12-25
    • US09412761
    • 1999-10-05
    • Jiro YoshinariHiroshi ShingaiTakuya Tsukagoshi
    • Jiro YoshinariHiroshi ShingaiTakuya Tsukagoshi
    • G11B370
    • G11B7/126G11B7/00454G11B7/00718G11B7/24G11B7/24085
    • An optical recording medium of phase change type wherein favorable recording/reproducing properties are realized in high density recording, in particular, when the minimum mark length is up to 0.6 &mgr;m and the track pitch is up to 0.7 &mgr;m is provided. An optical recording method wherein high transfer rate is realized in the use of such high density recording medium is also provided. The optical recording medium has a recording layer having a thickness dr of 10 to 18 nm, and the first dielectric layer comprises one or more unit dielectric layers and the number of the unit dielectric layers is m (m: an integer of 1 or more). The relation: λ 2 ≤ ∑ i = 1 m ⁢ n i ⁢ d i + n r ⁢ d r ≤ 3 ⁢ λ 4 is satisfied when i-th unit dielectric layer from the substrate has a thickness of di and a refractive index of ni at the recording/reproducing light wavelength of &lgr;, and the recording layer in its crystalline state has a refractive index of nr. The second dielectric layer has a thickness D in the range of 10 to 50 nm.
    • 具有在高密度记录中实现良好的记录/再现特性的相变型光记录介质,特别是当最小标记长度高达0.6μm并且轨道间距高达0.7μm时。 还提供了在使用这种高密度记录介质时实现高传输速率的光学记录方法。 光记录介质具有厚度为10〜18nm的记录层,第一介质层包含一个以上的单位电介质层,单位电介质层数为m(m:1以上的整数) 。 当从基板的第i个单位介电层具有di的厚度和在lambd的记录/再现光波长处的ni的折射率,并且其结晶状态的记录层的折射率为nr时,满足以下关系: 。 第二电介质层的厚度D在10〜50nm的范围内。