专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US6017386A Decolorizable ink and printer 失效
标题翻译：可脱色油墨和打印机
公开(公告)号：US6017386A
公开(公告)日：2000-01-25
申请号：US235476
申请日：1999-01-22
申请人： Kenji Sano , Katsuyuki Naito , Satoshi Takayama , Sawako Fujioka , Tetsuo Okuyama , Shigeru Machida
发明人： Kenji Sano , Katsuyuki Naito , Satoshi Takayama , Sawako Fujioka , Tetsuo Okuyama , Shigeru Machida
IPC分类号： C09D11/00
CPC分类号： C09D11/50
摘要： A decolorizable image forming material comprising a color former, a developer and a decolorizer, the decolorizer comprising a highly amorphous phase separation inhibitor and a slightly amorphous phase separation inhibitor. A cyclic sugar alcohol is used as the highly amorphous phase separation inhibitor, and a non-aromatic cyclic compound having five-membered or larger ring substituted by a hydroxyl group or a derivative of a cyclic sugar alcohol is used as the slightly amorphous phase separation inhibitor. The decolorizable image forming material can be decolored easily after image formation by a solvent and the decolored state of which can be maintained stably, thereby making it possible to reuse paper sheets.
摘要翻译：包含成色剂，显色剂和消色剂的脱色图像形成材料，所述消色剂包含高度无定形相分离抑制剂和微不定形相分离抑制剂。使用环状糖醇作为高度无定形相分离抑制剂，并且使用由羟基取代的五元环或更多环的环状化合物或环状糖醇衍生物的非芳族环状化合物作为微小的无定形相分离抑制剂。可脱色成像材料在通过溶剂成像后可以容易地脱色，并且其脱色状态可以保持稳定，从而可以再利用纸张。

42. 发明授权

US5536588A Amorphous organic thin film element and amorphous organic polymer composition 失效
标题翻译：无定形有机薄膜元件和无定形有机聚合物组合物
公开(公告)号：US5536588A
公开(公告)日：1996-07-16
申请号：US97029
申请日：1993-07-27
申请人： Katsuyuki Naito
发明人： Katsuyuki Naito
IPC分类号： B41M5/26 , C09K11/06 , G02F1/35 , G03C1/72 , G03G5/06 , H01L29/861 , H01L33/26 , H01L33/42 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/42 , H01L51/50 , H05B33/12 , H05B33/14
CPC分类号： H05B33/14 , C09K11/06 , G03G5/06 , G03G5/0661 , H01L51/0058 , H01L51/0059 , H01L51/007 , H01L51/0071 , H01L2251/308 , H01L51/005 , Y02E10/549
摘要： Disclosed is an amorphous organic thin-film element containing dye molecules with .SIGMA..DELTA.Str,m (J/(K.kmol))/Mw of 60 or less, assuming that the molecular weight is Mw and the sum total of an entropy change of melting and entropy changes of transition from a glass transition point to a melting point is .SIGMA..DELTA.Str,m (J/(K.kmol)), and having a high heat resistance and a high stability over long periods of time.
摘要翻译：公开了含有具有SIGMA DELTA Str，m（J /（K.kmol））/ Mw为60以下的染料分子的无定形有机薄膜元件，假定分子量为Mw，熵变的总和为从玻璃化转变点到熔点的转变的熔融和熵变为SIGMA DELTA Str，m（J /（K.kmol）），并且在长时间内具有高耐热性和高稳定性。

43. 发明授权

US07924678B2 Recording/reproducing head, recording/reproducing apparatus, recording method, and reproducing method 有权
标题翻译：记录/再现头，记录/再现装置，记录方法和再现方法
公开(公告)号：US07924678B2
公开(公告)日：2011-04-12
申请号：US11495591
申请日：2006-07-31
申请人： Koichi Kubo , Hiroshi Watanabe , Katsuyuki Naito , Takahiro Hirai
发明人： Koichi Kubo , Hiroshi Watanabe , Katsuyuki Naito , Takahiro Hirai
IPC分类号： G11B7/00
CPC分类号： G11B9/08 , B82Y10/00 , G11B9/1409 , G11B9/1472 , G11B11/08
摘要： A recording/reproducing head includes a laminated body facing to a recording medium, the body including a first conductive layer, a first insulating layer and a second conductive layer which are sequentially stacked. The first conductive layer generates electrons and injects the electrons into the recording medium through the first insulating layer.
摘要翻译：记录/再现头包括面向记录介质的层叠体，该主体包括依次层叠的第一导电层，第一绝缘层和第二导电层。第一导电层产生电子并通过第一绝缘层将电子注入到记录介质中。

44. 发明授权

US07883930B2 Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof 有权
标题翻译：包括多个导电体的相变存储器及其制造方法
公开(公告)号：US07883930B2
公开(公告)日：2011-02-08
申请号：US12184428
申请日：2008-08-01
申请人： Takayuki Tsukamoto , Katsuyuki Naito , Sumio Ashida
发明人： Takayuki Tsukamoto , Katsuyuki Naito , Sumio Ashida
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16 , Y10S438/90
摘要： A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.
摘要翻译：一种相变存储器，至少包括存储单元，该存储单元包括第一电极，设置在第一电极上的导电部分，并且具有设置在第一电极上的具有大致相同形状的至少两个导电体，导电体间隔开通过具有高电阻的高电阻膜，设置在导电部分上并具有相变材料的记录层，其可以在具有第一电阻率的第一相位状态和第二相位状态之间变化，具有不同于第二电阻率的第二电阻率第一电阻率和设置在记录层上的第二电极。

45. 发明申请

US20100264019A1 METHOD AND APPARATUS FOR MANUFACTURING MAGNETIC RECORDING MEDIA 失效
标题翻译：制造磁记录介质的方法和装置
公开(公告)号：US20100264019A1
公开(公告)日：2010-10-21
申请号：US12829450
申请日：2010-07-02
申请人： Yoshiyuki Kamata , Katsuyuki Naito , Akira Kikitsu , Masatoshi Sakurai , Masahiro Oka
发明人： Yoshiyuki Kamata , Katsuyuki Naito , Akira Kikitsu , Masatoshi Sakurai , Masahiro Oka
IPC分类号： C23C14/46
CPC分类号： C23F4/00 , B82Y10/00 , G11B5/012 , G11B5/743 , G11B5/82 , G11B5/855 , H01J2237/30466 , H01J2237/3174
摘要： According to one embodiment, a method for manufacturing a magnetic recording medium includes forming patterns having protrusions and recesses of a ferromagnetic material onto a recording track section and a servo section on a substrate, forming a flattening film, a top surface of which is higher than that of the protrusion of the ferromagnetic material, onto the ferromagnetic material, and performing ion beam etching onto the flattening film up to a top surface of the protrusion of the ferromagnetic material, and determining an end point of flattening etching on the basis of a change in the total number of incident particles by means of an ion counter installed so as to be at an angle θ with respect to a perpendicular direction to the substrate in accordance with a material of the flattening film.
摘要翻译：根据一个实施例，一种制造磁记录介质的方法包括将具有铁磁材料的突起和凹陷的图案形成在记录轨道部分和基板上的伺服部分上，形成平坦化膜，其顶表面高于将铁磁材料的突出部分突出到铁磁材料上，并且对平坦化膜进行离子束蚀刻直到铁磁材料的突起的顶表面，并且基于变化确定平坦化蚀刻的终点在通过以与角度为角度安装的离子计数器的入射颗粒的总数中; 相对于基板的垂直方向，根据平坦化膜的材料。

46. 发明申请

US20090042340A1 NONVOLATILE STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME, AND STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失存储器件及其制造方法及存储器件及其制造方法
公开(公告)号：US20090042340A1
公开(公告)日：2009-02-12
申请号：US12249688
申请日：2008-10-10
申请人： Yuichi MOTOI , Katsuyuki Naito
发明人： Yuichi MOTOI , Katsuyuki Naito
IPC分类号： H01L21/82
CPC分类号： G11C17/16 , G11C16/0483 , G11C17/18 , H01L27/115 , H01L27/11568
摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.
摘要翻译：非易失性存储装置包括在基板上沿列方向配置的多个位线21，在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

47. 发明授权

US07266034B2 Data recording device 有权
公开(公告)号：US07266034B2
公开(公告)日：2007-09-04
申请号：US11366465
申请日：2006-03-03
申请人： Takahiro Hirai , Katsuyuki Naito , Koichi Kubo , Yuichi Motoi , Hiroshi Watanabe
发明人： Takahiro Hirai , Katsuyuki Naito , Koichi Kubo , Yuichi Motoi , Hiroshi Watanabe
IPC分类号： G11C7/00
CPC分类号： G11C16/3418 , G11C13/0033 , G11C13/0069 , G11C16/30 , G11C16/3431
摘要： An data recording device according to an aspect of the present invention includes a memory cell array in a memory chip, a refresh circuit which executes a refreshing of the memory cell array, a refresh control circuit which executes refreshing at a time interval which is shorter than a data hold time and manages a data hold time, and an internal power source which supplies a power source electric potential to the refresh circuit and the refresh control circuit in a state in which the data recording device is removed from an external device.

48. 发明申请

US20070140001A1 NONVOLATILE STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME, AND STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：非易失存储器件及其制造方法及存储器件及其制造方法
公开(公告)号：US20070140001A1
公开(公告)日：2007-06-21
申请号：US11533648
申请日：2006-09-20
申请人： Yuichi Motoi , Katsuyuki Naito
发明人： Yuichi Motoi , Katsuyuki Naito
IPC分类号： G11C11/34
CPC分类号： G11C17/16 , G11C16/0483 , G11C17/18 , H01L27/115 , H01L27/11568
摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.
摘要翻译：非易失性存储装置包括在基板上沿列方向配置的多个位线21，在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

49. 发明申请

US20070030747A1 Data recording device 有权
标题翻译：数据记录装置
公开(公告)号：US20070030747A1
公开(公告)日：2007-02-08
申请号：US11366465
申请日：2006-03-03
申请人： Takahiro Hirai , Katsuyuki Naito , Koichi Kubo , Yuichi Motoi , Hiroshi Watanabe
发明人： Takahiro Hirai , Katsuyuki Naito , Koichi Kubo , Yuichi Motoi , Hiroshi Watanabe
IPC分类号： G11C7/00
CPC分类号： G11C16/3418 , G11C13/0033 , G11C13/0069 , G11C16/30 , G11C16/3431
摘要： An data recording device according to an aspect of the present invention includes a memory cell array in a memory chip, a refresh circuit which executes a refreshing of the memory cell array, a refresh control circuit which executes refreshing at a time interval which is shorter than a data hold time and manages a data hold time, and an internal power source which supplies a power source electric potential to the refresh circuit and the refresh control circuit in a state in which the data recording device is removed from an external device.
摘要翻译：根据本发明的一个方面的数据记录装置包括存储芯片中的存储单元阵列，执行存储单元阵列刷新的刷新电路，刷新控制电路，其以比数据保持时间并管理数据保持时间;以及在从外部设备移除数据记录装置的状态下向刷新电路和刷新控制电路提供电源电位的内部电源。

50. 发明申请

US20060261379A1 Phase change memory and manufacturing method thereof 审中-公开
标题翻译：相变记忆及其制造方法
公开(公告)号：US20060261379A1
公开(公告)日：2006-11-23
申请号：US11272751
申请日：2005-11-15
申请人： Takayuki Tsukamoto , Katsuyuki Naito , Sumio Ashida
发明人： Takayuki Tsukamoto , Katsuyuki Naito , Sumio Ashida
IPC分类号： H01L29/768
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/144 , H01L45/16 , Y10S438/90
摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.
摘要翻译：即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。相变存储器至少包括存储单元。存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极提供在记录层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式