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41. 发明申请

US20050194690A1 Submount and semiconductor device 有权
标题翻译：底座和半导体器件
公开(公告)号：US20050194690A1
公开(公告)日：2005-09-08
申请号：US10520385
申请日：2003-07-30
申请人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
发明人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
IPC分类号： H01L21/52 , H01L21/60 , H01S5/02 , H01S5/022 , H01L23/48
CPC分类号： B23K35/0238 , B23K1/0016 , B23K1/19 , B23K35/262 , B23K35/268 , B23K35/3006 , B23K35/3013 , B23K2101/40 , B32B15/01 , B32B15/018 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/13111 , H01L2224/29109 , H01L2224/29111 , H01L2224/8319 , H01L2224/83801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01S5/02272 , H01L2924/01028 , H01L2924/00 , H01L2224/0401
摘要： The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8.
摘要翻译：本发明提供一种能够以高接合强度附着半导体发光元件的基座。基座3配备有基板3和形成在基板4的主表面4f上的焊料层8。焊料层8的密度为焊料层8中使用的材料的理论密度的至少50％且不超过99.9％。焊料层8包含以下列表中的至少一个：金 - 锡合金; 银锡合金; 和铅锡合金。在其上熔化的焊料层8形成在基板4上，并且包括Ag膜8b和形成在Ag膜8b上的Sn膜8a。基座3还包括形成在基板4和焊料层8之间的Au膜6。

42. 发明授权

US06716304B2 Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer holder 失效
标题翻译：用于半导体制造装置的晶片保持器，以及晶片保持器的制造方法
公开(公告)号：US06716304B2
公开(公告)日：2004-04-06
申请号：US10309402
申请日：2002-12-03
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
IPC分类号： H05H100
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.
摘要翻译：用于半导体制造装置的晶片保持器具有高导热性。晶片保持器包括烧结陶瓷片，可以在烧结陶瓷片的至少一个表面上高精度地形成的加热器电路图案的导电层和形成在烧结陶瓷片上的导电层上的保护层以覆盖导电层的表面。保护层可以包含玻璃，诸如氮化铝或氮化硅的非氧化物陶瓷，镱，钕和钙的氧化物，或钇和铝的氧化物。在制造晶片保持器的方法中，将含有金属颗粒的糊剂施加在烧结陶瓷片的表面上，并且被烧制以形成作为导电层的加热器电路图案。然后在烧结陶瓷片上形成保护层以覆盖导电层的表面。

43. 发明授权

US5244873A Process for preparing a thin film of bi-type oxide superconductor 失效
标题翻译：制备二氧化碳超导体薄膜的方法
公开(公告)号：US5244873A
公开(公告)日：1993-09-14
申请号：US795797
申请日：1991-11-21
申请人： Hisao Hattori , Kenjiro Higaki , Hideo Itozaki
发明人： Hisao Hattori , Kenjiro Higaki , Hideo Itozaki
IPC分类号： C01G29/00 , C01G1/00 , C23C14/08 , C23C14/34 , C30B29/22 , H01B12/06 , H01B13/00 , H01L21/203 , H01L39/24
CPC分类号： H01L39/2435 , Y10S505/731 , Y10S505/782
摘要： A process for preparing a single crystal thin film made of oxide superconductor of Bi, Sr, Ca, and Cu on a substrate by a sputtering method using a target made of a sintered oxide of Bi, Sr, Ca, and Cu and having its c-axis oriented in parallel with the surface of the substrate.The sputtering is effected by 90.degree. off-axis magnetron sputtering at a substrate temperature between 500.degree. C. and 750.degree. C. at a gas pressure between 0.001 Torr and 1 Torr.

44. 发明授权

US5114906A Process for depositing Tl-containing superconducting thin films on (110) MgO substrates 失效
标题翻译：在（110）MGO基板上沉积含TL超导薄膜的工艺
公开(公告)号：US5114906A
公开(公告)日：1992-05-19
申请号：US663451
申请日：1991-03-04
申请人： Kenjiro Higaki , Keizo Harada , Naoji Fujimori , Hideo Itozaki , Shuji Yazu
发明人： Kenjiro Higaki , Keizo Harada , Naoji Fujimori , Hideo Itozaki , Shuji Yazu
IPC分类号： C01G1/00 , C01G15/00 , C04B41/87 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
CPC分类号： H01L39/2458 , C23C14/087 , H01L39/2451 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10S505/731 , Y10S505/732
摘要： Improvement in a superconducting thin film of a superconducting compound oxide containing thallium (Tl) deposited on a substrate, characterized in that the superconducting thin film is deposited by PVD on {110} plane of a single crystal of magnesium oxide (MgO).

45. 发明授权

US4996190A Superconducting thin film and a process for depositing the same 失效
标题翻译：超导薄膜及其沉积工艺
公开(公告)号：US4996190A
公开(公告)日：1991-02-26
申请号：US367732
申请日：1989-06-19
申请人： Kenjiro Higaki , Keizo Harada , Naoji Fujimori , Hideo Itozaki , Shuji Yazu
发明人： Kenjiro Higaki , Keizo Harada , Naoji Fujimori , Hideo Itozaki , Shuji Yazu
IPC分类号： C01G1/00 , C01G15/00 , C04B41/87 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
CPC分类号： H01L39/2458 , C23C14/087 , H01L39/2451 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10S505/731 , Y10S505/732
摘要： Improvement in a superconducting thin film of a superconducting compound oxide containing bismuth (Bi) deposited on a substrate, characterized in that the superconducting thin film is deposited on {110} plane of a single crystal of magnesium oxide (MgO).

46. 发明授权

US07897990B2 Semiconductor light emitting element mounting member, and semiconductor light emitting device employing it 有权
标题翻译：半导体发光元件安装部件和采用该半导体发光元件的半导体发光元件
公开(公告)号：US07897990B2
公开(公告)日：2011-03-01
申请号：US10599036
申请日：2005-02-22
申请人： Teruo Amoh , Sadamu Ishidu , Kenjiro Higaki , Yasushi Tsuzuki , Hiroshi Fukuda
发明人： Teruo Amoh , Sadamu Ishidu , Kenjiro Higaki , Yasushi Tsuzuki , Hiroshi Fukuda
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 μm and the center-line average roughness Ra of the surface is no more than 0.1 μm. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.
摘要翻译：在用作电极层和/或反射层的金属膜中具有改善的有效光反射率的半导体发光元件安装构件，其中金属层具有改善的对基板的粘附性，机械强度和可靠性以及优异的光发光特性。半导体发光元件安装构件（底座）通过在由Ag，Al或含有这些金属的合金形成的基板金属膜上形成。金属膜的晶粒的粒径不大于0.5μm，表面的中心线平均粗糙度Ra不大于0.1μm。在半导体发光装置中，半导体发光元件安装在基座中。

47. 发明授权

US07504671B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07504671B2
公开(公告)日：2009-03-17
申请号：US11929492
申请日：2007-10-30
申请人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
发明人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/46 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.
摘要翻译：提供了用于充分去除由半导体元件产生的热的半导体器件。半导体装置100配备有基板2，基板2具有底面2b和位于底面2b的相反侧的元件安装面2a，半导体元件1具有安装在元件上的主表面1a 安装面2a。在L是主表面1的长度方向上的长度，H是底面2b与元件安装面2a的距离的情况下，H / L的比例为0.3以上。当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。金属层13设置在空腔2u的表面上。此外，当在主表面1a上设置连接到外部部分的电极32时，在与电极32连接的部分的空腔侧，主表面1a设置有凹槽。凹槽用于防止电极32的连接构件34向外流动。

48. 发明授权

US07335925B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07335925B2
公开(公告)日：2008-02-26
申请号：US10539926
申请日：2004-03-08
申请人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
发明人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/46 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.
摘要翻译：提供了用于充分去除由半导体元件产生的热的半导体器件。半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1，安装在元件安装表面2a上。在L表示主表面1a的长度方向上的长度a和H是底面2b与元件安装面2a之间的距离时，H / L的比例为0.3以上。当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。金属层13设置在空腔2u的表面上。

49. 发明申请

US20070215895A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT MOUNTING MEMBER, AND SEMICONDUCTOR LIGHT EMITTING DEVICE EMPLOYING IT 有权
标题翻译：半导体发光元件安装构件和半导体发光器件使用
公开(公告)号：US20070215895A1
公开(公告)日：2007-09-20
申请号：US10599036
申请日：2005-02-22
申请人： Teruo Amoh , Sadamu Ishidu , Kenjiro Higaki , Yasushi Tsuzuki , Hiroshi Fukuda
发明人： Teruo Amoh , Sadamu Ishidu , Kenjiro Higaki , Yasushi Tsuzuki , Hiroshi Fukuda
IPC分类号： H01L31/12
CPC分类号： H01L33/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor light-emitting element mounting member with an improved effective light reflectivity in a metal film serving as an electrode layer and/or a reflective layer, in which the metal layer has improved adhesion to a substrate, mechanical strength, and reliability and superior light-emitting characteristics. The semiconductor light-emitting element mounting member (a submount) is made by forming on a substrate metal films formed from Ag, Al, or an alloy containing these metals. The particle diameter of the crystal grains of the metal films is no more than 0.5 μm and the center-line average roughness Ra of the surface is no more than 0.1 μm. In a semiconductor light-emitting device, a semiconductor light-emitting element is mounted in the submount.
摘要翻译：在用作电极层和/或反射层的金属膜中具有改善的有效光反射率的半导体发光元件安装构件，其中金属层具有改善的对基板的粘附性，机械强度和可靠性以及优异的光发光特性。半导体发光元件安装构件（底座）通过在由Ag，Al或含有这些金属的合金形成的基板金属膜上形成。金属膜的晶粒的粒径不大于0.5μm，表面的中心线平均粗糙度Ra不大于0.1μm。在半导体发光装置中，半导体发光元件安装在基座中。

50. 发明申请

US20050067636A1 Submount and semiconductor device 有权
标题翻译：底座和半导体器件
公开(公告)号：US20050067636A1
公开(公告)日：2005-03-31
申请号：US10506510
申请日：2003-03-03
申请人： Teruo Amoh , Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
发明人： Teruo Amoh , Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
IPC分类号： H01L33/62 , H01S5/02 , H01S5/022 , H01L29/768
CPC分类号： H01S5/02272 , H01L33/62 , H01L2924/0002 , H01S5/02476 , H01L2924/00
摘要： A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount 3 comprises (a) a substrate 4; and (b) a solder layer 8 formed on the top surface 4f of the substrate 4. The solder layer 8 before melting has a surface roughness, Ra, of at most 0.18 μm. It is more desirable that the solder layer 8 before melting have a surface roughness, Ra, of at most 0.15 μm, yet more desirably at most 0.10 μm. A semiconductor unit 1 comprises the submount 3 and a laser diode 2 mounted on the solder layer 8 of the submount 3.
摘要翻译：一种能够在其上可靠地安装半导体发光器件的基座，以及并入该基座的半导体单元。基座3包括（a）基板4; 和（b）形成在基板4的顶面4f上的焊料层8.熔融前的焊料层8的表面粗糙度Ra为0.18μm以下。更理想的是，熔融前的焊料层8的表面粗糙度Ra为0.15μm以下，进一步优选为0.10μm以下。半导体单元1包括基座3和安装在基座3的焊料层8上的激光二极管2。

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