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    • 41. 发明授权
    • Method of fabricating thin film transistor array substrate
    • 制造薄膜晶体管阵列基板的方法
    • US07198968B2
    • 2007-04-03
    • US10969179
    • 2004-10-21
    • Gee Sung ChaeJin Wuk Kim
    • Gee Sung ChaeJin Wuk Kim
    • H01L21/00
    • H01L27/124H01L27/1288
    • A method of fabricating a thin film transistor array substrate is provided. The method includes forming a first conductive pattern group on a substrate using a first etch resist and a first soft mold, the first conductive pattern group including a gate electrode and a gate line; forming a gate insulating film on the substrate and the first conductive pattern group; forming a second conductive pattern group and a semiconductor pattern on the gate insulating film using a second etch resist and a second soft mold, the second conductive pattern group having a source electrode, a drain electrode, and a data line, the semiconductor pattern defining a channel region between the source electrode and the drain electrode; forming a passivation film on the gate insulating film, the second conductive pattern group and the semiconductor pattern using a third etch resist and a third soft mold, the passivation film defining a contact hole therethrough; and forming a third conductive pattern group on the passivation film using a fourth etch resist and a fourth soft mold, the third conductive pattern group having a pixel electrode.
    • 提供一种制造薄膜晶体管阵列基板的方法。 该方法包括使用第一蚀刻抗蚀剂和第一软模在衬底上形成第一导电图案组,第一导电图案组包括栅电极和栅极线; 在所述基板和所述第一导电图案组上形成栅极绝缘膜; 在所述栅绝缘膜上形成第二导电图案组和半导体图案,使用第二蚀刻抗蚀剂和第二软模,所述第二导电图案组具有源电极,漏电极和数据线,所述半导体图案限定 源电极和漏电极之间的沟道区域; 在栅绝缘膜上形成钝化膜,使用第三蚀刻抗蚀剂和第三软模形成第二导电图案组和半导体图案,钝化膜限定穿过其中的接触孔; 以及使用第四蚀刻抗蚀剂和第四软模具在所述钝化膜上形成第三导电图案组,所述第三导电图案组具有像素电极。
    • 49. 发明申请
    • Liquid Crystal Display Device And Method For Fabricating The Same
    • 液晶显示装置及其制造方法
    • US20100327272A1
    • 2010-12-30
    • US12877672
    • 2010-09-08
    • Gee Sung Chae
    • Gee Sung Chae
    • H01L51/52H01L51/54
    • G02F1/1362G02F1/136286G02F2001/136231H01L27/1248H01L27/1288
    • An LCD device and a method for fabricating the same is disclosed that improves a yield by decreasing processing time. The LCD device includes gate and data lines formed substantially perpendicular to each other on a substrate and defining a unit pixel region; a thin film transistor formed at a crossing of the gate and data lines; an active layer formed over the gate line, the data line, and the thin film transistor; an organic resin formed on a portion of a gate insulating layer not including the gate line, the data line, and the thin film transistor; a passivation layer formed on an entire surface of the substrate including the thin film transistor; and a pixel electrode, formed in the unit pixel region, the pixel electrode being connected with a drain electrode of the thin film transistor.
    • 公开了一种LCD装置及其制造方法,其通过减少处理时间来提高产量。 LCD装置包括在基板上基本上彼此垂直地形成并限定单位像素区域的栅极和数据线; 形成在栅极和数据线的交叉处的薄膜晶体管; 形成在栅极线,数据线和薄膜晶体管上的有源层; 形成在不包括栅极线,数据线和薄膜晶体管的栅极绝缘层的一部分上的有机树脂; 形成在包括所述薄膜晶体管的所述基板的整个表面上的钝化层; 以及形成在所述单位像素区域中的像素电极,所述像素电极与所述薄膜晶体管的漏电极连接。