会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 41. 发明授权
    • Silicon thin film transistor
    • 硅薄膜晶体管
    • US5021850A
    • 1991-06-04
    • US377873
    • 1989-07-10
    • Sakae TanakaYoshiaki WatanabeKatsuo ShiraiYoshihisa Ogiwara
    • Sakae TanakaYoshiaki WatanabeKatsuo ShiraiYoshihisa Ogiwara
    • H01L21/336H01L29/786
    • H01L29/66765H01L29/78618H01L29/78621H01L29/78624H01L29/7866H01L29/78669
    • A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
    • 硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管,每个硅薄膜晶体管包括绝缘基板,形成在绝缘基板上的栅电极,形成在绝缘基板上的栅绝缘层, 栅电极,一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层,形成在一对第一杂质上的本征硅层含有硅层和在 一对第一杂质之间的栅极绝缘层包含硅层,以便连接一对第一杂质含硅层,形成在本征硅层上的保护绝缘层,以及形成在源极电极和漏电极 该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。
    • 48. 发明授权
    • Photographic camera with an automatic exposure control adapter unit
detachably mounted thereon
    • 具有可拆卸地安装在其上的自动曝光控制适配器单元的照相机
    • US4130355A
    • 1978-12-19
    • US740310
    • 1976-11-09
    • Shohei OhtakiSoichi NakamotoTomonori IwashitaYoshiaki WatanabeSusumu Kozuki
    • Shohei OhtakiSoichi NakamotoTomonori IwashitaYoshiaki WatanabeSusumu Kozuki
    • G03B7/091G03B7/16
    • G03B7/097
    • An automatic exposure control system permitting for a photographic camera to make an exposure in either of the shutter preselection automatic exposure range and the diaphragm preselection automatic exposure range is established by combination of an adapter unit with the camera. This adapter unit has a housing attachable to and detachable from the camera body, and includes an exposure operation and control circuit capable, upon preselection of an exposure time, of deriving an exposure value representing an effective exposure aperture, and, upon preselection of diaphragm value, of deriving an exposure value representing an exposure time. Responsive to the output of the adapter unit, the control device in the camera body controls operation of the shutter and diaphragm mechanisms thereof selectively in accordance with the exposure value derived from said exposure operation and control circuit. The provision for permitting the camera to make an exposure in an automatic flash exposure range is also made at the exposure operation and control circuit of the adapter unit in a manner to determine the period of energization of a flash unit associated with the camera.
    • 通过适配器单元与照相机的组合,建立允许照相机在快门预选自动曝光范围和光圈预选自动曝光范围中的曝光的自动曝光控制系统。 该适配器单元具有可附接到照相机主体并且可从相机主体拆卸的外壳,并且包括曝光操作和控制电路,该曝光操作和控制电路能够在预选曝光时间之后得到表示有效曝光孔径的曝光值,并且在预先选择光阑值 得出表示曝光时间的曝光值。 响应于适配器单元的输出,照相机主体中的控制装置根据从所述曝光操作和控制电路导出的曝光值选择性地控制快门和光阑机构的操作。 在适配器单元的曝光操作和控制电路中,也可以以确定与相机相关联的闪光单元的通电周期的方式来允许相机在自动闪光曝光范围内曝光的设置。