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41. 发明授权

US09553258B2 Magnetoresistive memory element and method of fabricating same 有权
标题翻译：磁阻存储元件及其制造方法
公开(公告)号：US09553258B2
公开(公告)日：2017-01-24
申请号：US14860657
申请日：2015-09-21
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L21/8234 , H01L43/08 , H01L43/10 , H01L43/12 , H01L43/02 , G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive memory element (for example, a spin-torque magnetoresistive memory element), includes first and second dielectric layers, wherein at least one of the dielectric layers is a magnetic tunnel junction. The memory element also includes a free magnetic layer having a first surface in contact with the first dielectric layer and a second surface in contact with the second dielectric layer. The free magnetic layer, which is disposed between the first and second dielectric layers, includes (i) a first high-iron interface region located along the first surface of the free magnetic layer, wherein the first high-iron interface region has at least 50% iron by atomic composition, and (ii) a first layer of ferromagnetic material adjacent to the first high-iron interface region, the first high-iron interface region between the first layer of ferromagnetic material and the first surface of the free magnetic layer.
摘要翻译：磁阻存储元件（例如，自旋扭矩磁阻存储元件）包括第一和第二电介质层，其中至少一个电介质层是磁性隧道结。存储元件还包括具有与第一介电层接触的第一表面和与第二介电层接触的第二表面的自由磁性层。设置在第一和第二电介质层之间的自由磁性层包括（i）沿着自由磁性层的第一表面设置的第一高铁界面区域，其中第一高铁界面区域具有至少50 以及（ii）与第一高铁界面区域相邻的第一铁磁材料层，第一铁磁材料层与自由磁性层的第一表面之间的第一高铁界面区域。

42. 发明授权

US09159906B2 Spin-torque magnetoresistive memory element and method of fabricating same 有权
标题翻译：自旋扭矩磁阻存储元件及其制造方法
公开(公告)号：US09159906B2
公开(公告)日：2015-10-13
申请号：US14219532
申请日：2014-03-19
申请人： EVERSPIN TECHNOLOGIES, INC.
发明人： Renu Whig , Jon Slaughter , Nicholas Rizzo , Jijun Sun , Frederick Mancoff , Dimitri Houssameddine
IPC分类号： H01L21/8234 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A spin-torque magnetoresistive memory element has a high magnetoresistance and low current density. A free magnetic layer is positioned between first and second spin polarizers. A first tunnel barrier is positioned between the first spin polarizer and the free magnetic layer and a second tunnel barrier is positioned between the second spin polarizer and the free magnetic layer. The magnetoresistance ratio of the second tunnel barrier has a value greater than double the magnetoresistance ratio of the first tunnel barrier.
摘要翻译：自旋转矩磁阻存储元件具有高磁阻和低电流密度。自由磁性层位于第一和第二自旋偏振器之间。第一隧道势垒位于第一自旋偏振器和自由磁性层之间，第二隧道势垒位于第二自旋偏振器和自由磁性层之间。第二隧道势垒的磁阻比具有大于第一隧道势垒的磁阻比的两倍的值。

43. 发明申请

US20150236253A1 Magnetoresistive Structure having a Metal Oxide Tunnel Barrier and Method of Manufacturing Same 审中-公开
标题翻译：具有金属氧化物隧道屏障的磁阻结构及其制造方法
公开(公告)号：US20150236253A1
公开(公告)日：2015-08-20
申请号：US14701831
申请日：2015-05-01
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jason Janesky , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine
IPC分类号： H01L43/12 , H01L43/08 , H01L43/10 , H01L43/02
CPC分类号： H01L43/02 , B82Y10/00 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12 , Y10S977/935
摘要： In one aspect, the present inventions are directed to a magnetoresistive structure having a tunnel junction, and a process for manufacturing such a structure. The tunnel barrier may be formed between a free layer and a fixed layer in a plurality of repeating process of depositing a metal material and oxidizing at least a portion of the metal material. Where the tunnel barrier is formed by deposition of at least three metal materials interceded by an associated oxidization thereof, the oxidation dose associated with the second metal material may be greater than the oxidation doses associated with the first and third metal materials. In certain embodiments, the fixed layer may include a discontinuous layer of a metal, for example, Ta, in the fixed layer between two layers of a ferromagnetic material.
摘要翻译：一方面，本发明涉及具有隧道结的磁阻结构，以及制造这种结构的方法。可以在沉积金属材料和氧化至少一部分金属材料的多个重复工艺中，在自由层和固定层之间形成隧道势垒。在通过沉积由其相关氧化作用介入的至少三种金属材料形成隧道势垒的地方，与第二金属材料相关的氧化剂量可能大于与第一和第三金属材料相关联的氧化剂量。在某些实施例中，固定层可以在两层铁磁材料之间的固定层中包括不连续的金属层，例如Ta。

44. 发明申请

US20150021606A1 MRAM SYNTHETIC ANITFEROMAGNET STRUCTURE 有权
标题翻译： MRAM合成ANITFEROMAGNET结构
公开(公告)号：US20150021606A1
公开(公告)日：2015-01-22
申请号：US14303200
申请日：2014-06-12
申请人： Everspin Technologies, Inc.
发明人： Srinivas V. Pietambaram , Bengt J. Akerman , Renu Whig , Jason Janesky , Nicholas D. Rizzo , Jon Slaughter
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
摘要： An MRAM bit (10) includes a free magnetic region (15), a fixed magnetic region (17) comprising an antiferromagnetic material, and a tunneling barrier (16) comprising a dielectric layer positioned between the free magnetic region (15) and the fixed magnetic region (17). The MRAM bit (10) avoids a pinning layer by comprising a fixed magnetic region exhibiting a well-defined high Hflop using a combination of high Hk (uniaxial anisotropy), high Hsat (saturation field), and ideal soft magnetic properties exhibiting well-defined easy and hard axes.
摘要翻译： MRAM位（10）包括自由磁区（15），包括反铁磁材料的固定磁区（17）和隧道势垒（16），其包括位于自由磁区（15）和固定磁区（17）。 MRAM位（10）通过使用高Hk（单轴各向异性），高Hsat（饱和磁场）和显示明确定义的理想软磁性质的组合，包括表现出明确的高Hflop的固定磁区，避免了钉扎层容易和坚硬的轴。

45. 发明申请

US20130264666A1 TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET 有权
标题翻译：具有减速补偿角度的双轴磁场传感器用于零偏移
公开(公告)号：US20130264666A1
公开(公告)日：2013-10-10
申请号：US13909622
申请日：2013-06-04
申请人： Everspin Technologies, Inc.
发明人： Jijun Sun , Phillip Mather , Srinivas Pietambaram , Jon Slaughter , Renu Whig , Nicholas Rizzo
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/10 , G01R33/098 , H01L43/12 , Y10T29/49117
摘要： A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.
摘要翻译：提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并具有小的补偿角。示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。

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