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41. 发明申请

US20120282714A1 SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 有权
标题翻译：具有不断发生的背景区域的障碍物
公开(公告)号：US20120282714A1
公开(公告)日：2012-11-08
申请号：US13530238
申请日：2012-06-22
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： H01L21/66
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：描述了用于提供感受器背面恒定发射率的方法和装置。提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

42. 发明授权

US08226770B2 Susceptor with backside area of constant emissivity 有权
标题翻译：受体具有不断发射率的背面积
公开(公告)号：US08226770B2
公开(公告)日：2012-07-24
申请号：US11744760
申请日：2007-05-04
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：提供了用于提供感受器背面恒定发射率的方法和装置。本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

43. 发明申请

US20110155058A1 SUBSTRATE PROCESSING APPARATUS HAVING A RADIANT CAVITY 审中-公开
标题翻译：具有辐射空间的基板处理装置
公开(公告)号：US20110155058A1
公开(公告)日：2011-06-30
申请号：US12967576
申请日：2010-12-14
申请人： David K. Carlson , Errol Sanchez , Herman Diniz , Satheesh Kuppurao
发明人： David K. Carlson , Errol Sanchez , Herman Diniz , Satheesh Kuppurao
IPC分类号： B05C13/02 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/52 , C30B25/105 , C30B25/12
摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, an apparatus for processing a substrate may include a substrate support having a base having a convex surface, an annular ring disposed on the base, and an edge ring disposed on the annular ring to support a substrate, wherein the base, annular ring, and edge ring form a radiant cavity capable of reflecting energy radiated from a backside of a substrate when disposed on the edge ring and wherein the backside of the substrate faces the convex surface of the base. Alternatively or in combination, in some embodiments, the base may include a metal layer encapsulated between a transparent non-metal upper layer and a non-metal lower layer.
摘要翻译：本文公开了处理衬底的方法和设备。在一些实施例中，用于处理衬底的装置可以包括具有底部的衬底支撑件，其具有凸形表面，设置在基座上的环形环和设置在环形环上以支撑衬底的边缘环，其中，环和边缘环形成辐射腔，其能够在布置在边缘环上时反射从衬底的背面辐射的能量，并且其中衬底的背面朝向基底的凸面。或者或组合地，在一些实施方案中，碱可以包括封装在透明非金属上层和非金属下层之间的金属层。

44. 发明授权

US07758697B2 Silicon-containing layer deposition with silicon compounds 有权
标题翻译：含硅层沉积与硅化合物
公开(公告)号：US07758697B2
公开(公告)日：2010-07-20
申请号：US11969139
申请日：2008-01-03
申请人： Paul B. Comita , Lance A. Scudder , David K. Carlson
发明人： Paul B. Comita , Lance A. Scudder , David K. Carlson
IPC分类号： C30B21/02
CPC分类号： C07F7/0896 , C01B33/04 , C01B33/107 , C07F7/12 , C23C16/24 , C23C16/30
摘要： Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si4X8, Si4X10, Si5X10, and Si5X12, where X is independently a hydrogen or halogen.
摘要翻译：描述了沉积含硅膜的方法。所述方法可以包括将硅化合物递送到表面或基底，并使硅化合物反应生长含硅膜。硅化合物可以是一种或多种具有选自Si 4 X 8，Si 4 X 10，Si 5 X 10和Si 5 X 12的式的化合物，其中X独立地是氢或卤素。

45. 发明申请

US20070267143A1 In situ cleaning of CVD system exhaust 审中-公开
标题翻译： CVD系统排气的原位清洗
公开(公告)号：US20070267143A1
公开(公告)日：2007-11-22
申请号：US11435065
申请日：2006-05-16
申请人： David K. Carlson
发明人： David K. Carlson
IPC分类号： C23F1/00 , C03C25/68
CPC分类号： C23C16/4412
摘要： Embodiments of the invention relate to methods and apparatus are disclosed for forming films using CVD. One or more method and apparatus embodiments include preventing the formation of bonds and/or breaking bonds that permit polymers to form in an exhaust line of a CVD apparatus.
摘要翻译：本发明的实施例涉及用于使用CVD形成膜的方法和装置。一种或多种方法和装置实施方案包括防止在CVD装置的排气管线中形成允许聚合物形成的键和/或断裂键。

46. 发明授权

US6083323A Method for controlling the temperature of the walls of a reaction chamber during processing 失效
标题翻译：在处理过程中控制反应室壁温度的方法
公开(公告)号：US6083323A
公开(公告)日：2000-07-04
申请号：US5311
申请日：1998-01-09
申请人： David K. Carlson , Norma Riley , Roger N. Anderson
发明人： David K. Carlson , Norma Riley , Roger N. Anderson
IPC分类号： C23C16/44 , C23C16/48 , C23C16/52 , H01L21/00 , B08B5/00 , B08B9/00
CPC分类号： C23C16/4405 , C23C16/481 , C23C16/52 , H01L21/67248 , Y10S438/905
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要翻译：一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。该装置包含用于测量室壁温度的温度测量装置。将测量的温度与预定的目标温度进行比较。闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。护罩形成支撑并包围反应室的壳体的一部分。

47. 发明授权

US5914050A Purged lower liner 失效
标题翻译：清洗下层衬垫
公开(公告)号：US5914050A
公开(公告)日：1999-06-22
申请号：US934920
申请日：1997-09-22
申请人： Paul B. Comita , David K. Carlson , Kimberly E. Klinck , Harold J. Mellen, III
发明人： Paul B. Comita , David K. Carlson , Kimberly E. Klinck , Harold J. Mellen, III
IPC分类号： C23C16/44 , C23C16/48 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4405 , C23C16/4401
摘要： Chemical vapor deposition apparatus 10 which includes a chemical vapor deposition processing chamber 12 having a base ring 18 and upper and lower quartz windows 20 and 22, and a quartz liner 26 lining the base ring 18, wherein a purge channel 46 is formed, in an outer surface of the liner 26, to remove contaminant material from an interface between the base ring 18 and the liner 26.
摘要翻译：化学气相沉积装置10包括具有基环18和上，下石英窗20和22的化学气相沉积处理室12和衬在基环18上的石英衬垫26，其中形成有净化通道46 衬套26的外表面，以从基环18和衬套26之间的界面去除污染物质。

48. 发明授权

US5411593A Apparatus for servicing vacuum chamber using non-reactive gas filled maintenance enclosure 失效
标题翻译：用于使用非反应性气体填充的维护外壳维修真空室的设备
公开(公告)号：US5411593A
公开(公告)日：1995-05-02
申请号：US167675
申请日：1993-12-14
申请人： David K. Carlson , Norma B. Riley
发明人： David K. Carlson , Norma B. Riley
IPC分类号： H01L21/205 , C23C16/44 , H01L21/00 , H01L21/31 , C23C16/00
CPC分类号： H01L21/67017 , C23C16/4401 , Y10S118/07
摘要： A process and apparatus is disclosed for providing access to the interior of a vacuum deposition chamber in a vacuum deposition apparatus without exposing residues, such as chlorosilane residues, within the chamber to moisture and/or oxygen-containing gases. The process comprises first placing over the upper surface of the vacuum deposition apparatus an enclosure which has a bottom opening large enough to completely cover the top opening to the chamber, and which is capable of being filled with one or more non-reactive gases. One or more non-reactive gases are then flowed into the enclosure to purge moisture and/or oxygen-containing gases from the enclosure. After the enclosure has been mounted on the apparatus and purged by the flow of non-reactive gases therein, the vacuum deposition chamber may be opened, while continuing the flow of non-reactive gases into the enclosure. After servicing, the vacuum deposition chamber may be resealed, the flow of non-reactive gases shut off, and the enclosure then removed from the apparatus. In a preferred embodiment, the flow of non-reactive gases into the enclosure is positioned to flow down from the top of the enclosure at a right angle to openings in the sidewall of the enclosure provided for accessing the vacuum deposition chamber, to thereby provide a gas curtain of non-reactive gas flow across the openings to inhibit ingress of moisture and/or oxygen-containing gases, as well as particulate impurities, into the enclosure.
摘要翻译：公开了一种用于提供在真空沉积设备中进入真空沉积室内部的方法和装置，而不会在室内的残留物例如氯硅烷残留物暴露于湿气和/或含氧气体中。该方法包括首先在真空沉积设备的上表面上放置外壳，该外壳具有足够大的底部开口以完全覆盖该腔室的顶部开口，并且能够填充一种或多种非反应性气体。然后将一个或多个非反应性气体流入外壳以从外壳清除湿气和/或含氧气体。在外壳已经安装在设备上并且被其中的非反应性气体流清除之后，可以打开真空沉积室，同时继续将非反应性气体流入外壳。维修后，真空沉积室可以重新密封，非反应性气体的流动被切断，然后将外壳从设备中取出。在优选实施例中，进入外壳的非反应性气体的流动被定位成从壳体的顶部以直角向下流动，所述开口位于设置用于进入真空沉积室的外壳的侧壁中的开口处，从而提供非活性气体的气幕流过开口，以阻止水分和/或含氧气体以及颗粒杂质进入外壳。

49. 发明授权

US5116181A Robotically loaded epitaxial deposition apparatus 失效
标题翻译：机械装载外墙沉积装置
公开(公告)号：US5116181A
公开(公告)日：1992-05-26
申请号：US354161
申请日：1989-05-19
申请人： David W. Severns , Brian Tompson , Paul R. Lindstrom , David K. Carlson
发明人： David W. Severns , Brian Tompson , Paul R. Lindstrom , David K. Carlson
IPC分类号： H01L21/205 , C23C16/54 , C30B25/02 , C30B35/00 , H01L21/673 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/4401 , C23C16/54 , C30B25/02 , C30B35/005 , H01L21/68707 , H01L21/68771
摘要： A susceptor carrying semiconductor wafers for processing is suspended from a compliant attachment at its upper end and is lowered into a reaction chamber for processing. At the completion of processing, the susceptor is withdrawn vertically to permit a robot to unload the processed wafers and load unprocessed wafers. In order to fix the position of the susceptor during the loading operations, a support carriage is moved into position to engage the lower end of the susceptor. Noxious and corrosive chloride vapors are simultaneously withdrawn from the reaction chamber by a vacuum line attached to the support carriage.

50. 发明授权

US4206491A Entry system 失效
标题翻译：入门系统
公开(公告)号：US4206491A
公开(公告)日：1980-06-03
申请号：US25646
申请日：1979-03-30
申请人： James R. Ligman , Peter Kaufman , Harry W. Kompanek , David K. Carlson
发明人： James R. Ligman , Peter Kaufman , Harry W. Kompanek , David K. Carlson
IPC分类号： G07C9/00 , E05B49/00
CPC分类号： G07C9/0069
摘要： A keyless system especially useful in controlling the doors and trunk of an automobile is disclosed. The overall system usually comprises an input station containing a keyboard, a signal processor, signal amplification means and an electromechanical grouping which converts the electrical output from the amplifier to mechanical movement in control of a lock. The system is activated by a touch control at the input keyboard and with the power section of the system energized, the lock is controlled in response to a proper sequence of digital input signals created by the operator. The input at the control station is described in terms of a keyboard having five selectors and resulting in approximately three thousand possible combinations for the base code. The signal processor responds to correct combinations of digital inputs with a drive signal. The signal processor is also programmable with temporary convenience codes which are loaded into the logic portion of the system with access preconditioned on entry of the base code.
摘要翻译：公开了一种特别适用于控制汽车的门和主干的无钥匙系统。整个系统通常包括一个输入站，它包含一个键盘，一个信号处理器，信号放大装置和一个机电组合，它将控制锁的放大器的电输出转换为机械运动。该系统通过输入键盘上的触摸控制被激活，并且系统的功率部分被激励，响应于由操作者创建的适当的数字输入信号序列来控制锁定。根据具有五个选择器的键盘来描述控制站的输入，并且导致用于基本码的大约三千种可能的组合。信号处理器响应数字输入与驱动信号的正确组合。信号处理器也可以用临时方便代码进行编程，这些代码被加载到系统的逻辑部分中，在基本代码输入时进行预处理。

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