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41. 发明申请

US20100140726A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC ELEMENTS HAVING ENHANCED MAGNETIC ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS 有权
标题翻译：使用这种磁性元件提供具有增强的磁性异相和磁记录的磁性元素的方法和系统
公开(公告)号：US20100140726A1
公开(公告)日：2010-06-10
申请号：US12328255
申请日：2008-12-04
申请人： Dmytro Apalkov , Yunfei Ding
发明人： Dmytro Apalkov , Yunfei Ding
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/56 , G11C2211/5615 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F41/302 , H01L43/12
摘要： A method and system for providing a magnetic element are described. The magnetic element includes pinned and free layers, a nonmagnetic spacer layer between the free and pinned layers, and a stability structure. The free layer is between the spacer layer and the stability structure. The free layer has a free layer magnetization, at least one free layer easy axis, and at least one hard axis. The stability structure includes magnetic layers and is configured to decrease a first magnetic energy corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy corresponding to the free layer magnetization being aligned with the at least one hard axis. The magnetic element is configured to allow the free layer magnetization to be switched to between states when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。磁性元件包括钉扎和自由层，在自由层和被钉扎层之间的非磁性间隔层，以及稳定结构。自由层位于间隔层和稳定结构之间。自由层具有自由层磁化，至少一个自由层容易轴和至少一个硬轴。稳定结构包括磁性层，并且被配置为减少对应于自由层磁化的第一磁能与至少一个容易轴对准，而不减少对应于自由层磁化的第二磁能与至少一个硬的轴。磁性元件被配置为当写入电流通过磁性元件时允许自由层磁化切换到状态之间。

42. 发明授权

US09236561B2 Method and system for providing multiple self-aligned logic cells in a single stack 有权
标题翻译：在单个堆叠中提供多个自对准逻辑单元的方法和系统
公开(公告)号：US09236561B2
公开(公告)日：2016-01-12
申请号：US13604182
申请日：2012-09-05
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Vladimir Nikitin , Alexander A. G. Driskill-Smith
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Vladimir Nikitin , Alexander A. G. Driskill-Smith
IPC分类号： H01L21/00 , H01L29/82 , H01L43/12 , H01L43/02 , H01L43/08 , G11C11/56 , G11C11/16 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/5607 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.
摘要翻译：提供包括存储单元的磁性装置。每个存储器单元可以存储对应于多个数据存储层的多个位。在每个存储单元中确定数据存储层的期望间隔和所需的结合角度。期望的结角和期望的间隔对应于具有数据存储层的自旋转移开关电流。存储包括用于每个存储器单元的多个层的磁阻堆叠。存储单元包括数据存储层。数据存储层层与最近的数据存储层间隔一段与期望间隔相对应的距离。在层上提供对应于存储单元的掩模。存储器单元被定义为使得每个存储器单元具有期望的结合角和期望的间隔，并且使得每个存储器单元的数据存储层是自对准的。

43. 发明申请

US20140225643A1 METHOD AND SYSTEM FOR PROVIDING A NONVOLATILE LOGIC ARRAY 有权
标题翻译：提供非诺基亚逻辑阵列的方法和系统
公开(公告)号：US20140225643A1
公开(公告)日：2014-08-14
申请号：US13557376
申请日：2012-07-25
申请人： Dmytro Apalkov , Eugene Chen , Kaveh Milaninia
发明人： Dmytro Apalkov , Eugene Chen , Kaveh Milaninia
IPC分类号： H03K19/08 , H01L43/12 , H01L27/22
CPC分类号： H01L27/224 , H01L43/08 , H01L43/12 , Y10S977/74
摘要： A method and system provide and program a nonvolatile logic device. The nonvolatile logic device includes input and output magnetic junctions and at least one magnetic junction between the input and output magnetic junctions. The input magnetic junction includes an input junction free layer having an input junction easy axis. The input magnetic junction may be switchable using a current driven through the magnetic junction. The output magnetic junction includes an output junction free layer having an output junction easy axis. Each of the magnetic junction(s) includes a free layer having an easy axis. The input magnetic junction is magnetically coupled to the output magnetic junction through the magnetic junction(s). In some aspects, the method includes switching the magnetic moment(s) of the input magnetic junction from a first state to a second state, applying and then removing magnetic field(s) along the hard axis of the at least one magnetic junction.
摘要翻译：方法和系统提供和编程非易失性逻辑器件。非易失性逻辑器件包括输入和输出磁结以及输入和输出磁性结之间的至少一个磁结。输入磁结包括具有输入结易轴的输入结自由层。可以使用通过磁结驱动的电流来切换输入磁结。输出磁结包括具有输出结容易轴的输出结自由层。每个磁结包括具有容易轴的自由层。输入磁结通过磁结磁耦合到输出磁结。在一些方面，该方法包括将输入磁结的磁矩从第一状态切换到第二状态，然后施加沿着至少一个磁结的硬轴移除磁场。

44. 发明申请

US20140175577A1 METHOD AND SYSTEM FOR PROVIDING VERTICAL SPIN TRANSFER SWITCHED MAGNETIC JUNCTIONS AND MEMORIES USING SUCH JUNCTIONS 有权
标题翻译：用于提供垂直转子切换磁性结和使用这种结点的记忆的方法和系统
公开(公告)号：US20140175577A1
公开(公告)日：2014-06-26
申请号：US13751304
申请日：2013-01-28
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置并位于基板上的磁结。磁结包括参考层，非磁性间隔层和自由层。非磁性间隔层位于参考层和自由层之间。自由层，非磁性间隔层和参考层与衬底形成非零角度。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

45. 发明申请

US20130161768A1 MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE COUPLED TO A MAGNETIC ELEMENT AND METHOD OF MANUFACTURE THEREOF 有权
标题翻译：在与磁性元件耦合的接触结构中具有磁性材料的磁性装置及其制造方法
公开(公告)号：US20130161768A1
公开(公告)日：2013-06-27
申请号：US13334045
申请日：2011-12-21
申请人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
发明人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
IPC分类号： H01L29/82
CPC分类号： H01F10/3263 , G11C11/161 , H01F10/3236 , H01F10/3272 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element.
摘要翻译：磁性装置具有包括磁性材料的接触结构。接触结构是磁性地和/或电耦合到诸如具有磁性隧道结（MTJ）多层结构的磁性元件的磁性元件。包括在接触结构中的磁性材料被配置为通过磁性元件的参考层补偿作用在磁性元件的自由层上的偏移场。

46. 发明申请

US20130154036A1 METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS 有权
标题翻译：用于提供具有改进特性的磁性结的方法和系统
公开(公告)号：US20130154036A1
公开(公告)日：2013-06-20
申请号：US13332305
申请日：2011-12-20
申请人： Xueti Tang , Dmytro Apalkov , Steven M. Watts , Kiseok Moon , Vladimir Nikitin
发明人： Xueti Tang , Dmytro Apalkov , Steven M. Watts , Kiseok Moon , Vladimir Nikitin
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/08 , G11C11/161 , G11C11/5607 , H01F10/3254 , H01F10/3286 , H01F10/3295
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层，自由层，至少一个绝缘层以及与至少一个绝缘层邻接的至少一个磁性插入层。非磁性间隔层位于被钉扎层和自由层之间。至少一个绝缘层与自由层和钉扎层中的至少一个相邻。所述至少一个磁性插入层邻接所述至少一个绝缘层。在一些方面，绝缘层包括氧化镁，氧化铝，氧化钽，氧化钌，氧化钛和氧化镍中的至少一种。磁结被构造成使得自由层可在多个稳定的写入电流通过磁性结时的磁状态。

47. 发明授权

US08446761B2 Method and system for providing multiple logic cells in a single stack 有权
标题翻译：在单个堆栈中提供多个逻辑单元的方法和系统
公开(公告)号：US08446761B2
公开(公告)日：2013-05-21
申请号：US13031001
申请日：2011-02-18
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith
IPC分类号： G11C11/15
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，多个非磁性间隔层和多个自由层。自由层与非磁性间隔层交错。非磁性间隔层的第一非磁性间隔层位于自由层和被钉扎层之间。每个自由层配置成当写入电流通过磁结时在稳定磁状态之间切换。每个自由层具有关键的开关电流密度。一个自由层的关键开关电流密度从相邻自由层的临界开关电流密度单调变化。相邻的自由层在被钉扎层和多个自由层中的一个之间。

48. 发明申请

US20120170357A1 METHOD AND SYSTEM FOR PROVIDING MULTIPLE LOGIC CELLS IN A SINGLE STACK 有权
标题翻译：用于在单个堆栈中提供多个逻辑单元的方法和系统
公开(公告)号：US20120170357A1
公开(公告)日：2012-07-05
申请号：US13031001
申请日：2011-02-18
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A.G. Driskill-Smith
IPC分类号： G11C11/16 , G11B5/64
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a plurality of nonmagnetic spacer layers, and a plurality of free layers. The free layers are interleaved with the nonmagnetic spacer layers. A first nonmagnetic spacer layer of the nonmagnetic spacer layers is between the free layers and the pinned layer. Each of the free layers is configured to be switchable between stable magnetic states when a write current is passed through the magnetic junction. Each of the free layers has a critical switching current density. The critical switching current density of one of the free layers changes monotonically from the critical switching current density of an adjacent free layer. The adjacent free layer is between the pinned layer and the one of the plurality of free layers.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，多个非磁性间隔层和多个自由层。自由层与非磁性间隔层交错。非磁性间隔层的第一非磁性间隔层位于自由层和被钉扎层之间。每个自由层配置成当写入电流通过磁结时在稳定磁状态之间切换。每个自由层具有关键的开关电流密度。一个自由层的关键开关电流密度从相邻自由层的临界开关电流密度单调变化。相邻的自由层在被钉扎层和多个自由层中的一个之间。

49. 发明申请

US20120112295A1 METHOD AND SYSTEM FOR PROVIDING HYBRID MAGNETIC TUNNELING JUNCTION ELEMENTS WITH IMPROVED SWITCHING 有权
标题翻译：用于提供具有改进的开关的混合磁性隧道结构元件的方法和系统
公开(公告)号：US20120112295A1
公开(公告)日：2012-05-10
申请号：US12940926
申请日：2010-11-05
申请人： Dmytro Apalkov , Mohamad Towfik Krounbi
发明人： Dmytro Apalkov , Mohamad Towfik Krounbi
IPC分类号： H01L29/82
CPC分类号： G11C11/1675 , G11C11/161
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has an easy cone magnetic anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。自由层具有容易的锥形磁各向异性。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

50. 发明授权

US07518835B2 Magnetic elements having a bias field and magnetic memory devices using the magnetic elements 有权
标题翻译：具有偏磁场的磁性元件和使用该磁性元件的磁性存储器件
公开(公告)号：US07518835B2
公开(公告)日：2009-04-14
申请号：US11173087
申请日：2005-07-01
申请人： Yiming Huai , Dmytro Apalkov
发明人： Yiming Huai , Dmytro Apalkov
IPC分类号： G11B5/39
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic biasing structure having a first pinned layer, a second pinned layer, a spacer layer, and a free layer. The first pinned layer has a first magnetization pinned in the first direction. The second pinned layer has a second magnetization in a second direction that is substantially perpendicular or along the first direction. The spacer layer is nonferromagnetic, resides between the second pinned layer and the free layer, and is configured such that the free layer is substantially free of exchange coupling with the second pinned layer. The free layer has a shape anisotropy with a longitudinal direction substantially in the second direction. The magnetic biasing structure provides a bias field for the free layer along the hard or easy axis. In one aspect, the second pinned layer resides between the first pinned layer and the free layer.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供具有第一被钉扎层，第二钉扎层，间隔层和自由层的磁偏置结构。第一被钉扎层具有沿第一方向固定的第一磁化。第二被钉扎层在基本垂直或沿第一方向的第二方向上具有第二磁化强度。间隔层是非铁磁性的，位于第二被钉扎层和自由层之间，并且被配置为使得自由层基本上不与第二被钉扎层的交换耦合。自由层具有基本上在第二方向上的纵向方向的形状各向异性。磁偏置结构为沿着硬轴或易轴提供自由层的偏置场。在一个方面，第二被钉扎层位于第一被钉扎层和自由层之间。

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