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41. 发明授权

US08617909B2 LED with substrate modifications for enhanced light extraction and method of making same 有权
公开(公告)号：US08617909B2
公开(公告)日：2013-12-31
申请号：US12384277
申请日：2009-04-01
申请人： Max Batres , James Ibbetson , Ting Li , Adam W. Saxler
发明人： Max Batres , James Ibbetson , Ting Li , Adam W. Saxler
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2924/10155 , H01L2224/0401
摘要： The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

42. 发明授权

US08558252B2 White LEDs with emission wavelength correction 有权
标题翻译：发光波长校正的白色LED
公开(公告)号：US08558252B2
公开(公告)日：2013-10-15
申请号：US13219486
申请日：2011-08-26
申请人： James Ibbetson , Bernd Keller , Ronan Letoquin , Matthew Donofrio , Michael Bergmann
发明人： James Ibbetson , Bernd Keller , Ronan Letoquin , Matthew Donofrio , Michael Bergmann
IPC分类号： H01L29/18 , H01L29/205 , H01L33/00 , H01L21/00
CPC分类号： H01L33/504 , H01L33/0095 , H01L2933/0041
摘要： Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.
摘要翻译：用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。在一个实施例中，将基础波长转换材料施加到半导体器件。一部分碱转换材料被去除。在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。

43. 发明授权

US08410679B2 Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface 有权
标题翻译：在发光表面具有密集磷光体层的半导体发光器件
公开(公告)号：US08410679B2
公开(公告)日：2013-04-02
申请号：US12887097
申请日：2010-09-21
申请人： James Ibbetson , Peter S. Andrews
发明人： James Ibbetson , Peter S. Andrews
IPC分类号： H01J1/62 , H01J9/00
CPC分类号： H01L33/50 , F21K9/64 , H01L33/501 , H01L33/508 , H01L2224/48091 , H01L2224/48247 , H01L2933/0041 , H05B33/10 , H01L2924/00014
摘要： An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles.
摘要翻译： LED包括具有发光表面的芯片和在发光表面上的含磷光体材料的涂层。荧光体颗粒被布置在发光表面的涂层内的密集堆积层中，并且使得发光表面与荧光体颗粒处于接触关系。

44. 发明授权

US08329482B2 White-emitting LED chips and method for making same 有权
标题翻译：白光LED芯片及其制造方法
公开(公告)号：US08329482B2
公开(公告)日：2012-12-11
申请号：US12771938
申请日：2010-04-30
申请人： Zhimin Jamie Yao , James Ibbetson
发明人： Zhimin Jamie Yao , James Ibbetson
IPC分类号： H01L21/00
CPC分类号： H01L33/50 , H01L33/0079 , H01L33/12 , H01L33/22 , H01L33/486 , H01L33/505 , H01L2224/16
摘要： Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material. At least some of the light emitted from the LEDs passes through the capping wafer where at least some of the light is converted by the conversion material.
摘要翻译：提供了用于发光二极管（LED）芯片的方法和装置。在一种方法的一个实施例中，提供预成形的封盖晶片，封盖晶片包括转换材料。制造包括多个LED的无引线接合LED晶片。封盖晶片使用粘合剂结合到LED晶片。在完成所有最终制造步骤后，LED芯片随后被分割。封装晶片在制造期间为LED芯片提供了坚固的机械支撑，这在制造过程中提高了芯片的强度。另外，封盖晶片可以包括集成转换材料，这简化了制造工艺。在用于LED芯片晶片的一个可能的实施例中，提供了一个底座晶片以及安装在底座晶片上的多个LED倒装芯片。此外，使用粘合剂将封盖晶片结合到LED，并且封盖晶片包括转换材料。从LED发射的至少一些光通过封盖晶片，其中至少一些光被转换材料转化。

45. 发明授权

US08288942B2 High efficacy white LED 有权
标题翻译：高效白光LED
公开(公告)号：US08288942B2
公开(公告)日：2012-10-16
申请号：US11227667
申请日：2005-09-15
申请人： James Ibbetson
发明人： James Ibbetson
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , F21K9/68 , H01L33/20 , H01L33/32 , H01L33/54 , H01L2224/73265
摘要： A white light emitting solid-state lamp is disclosed having an output of at least 75 lumens per watt at 20 milliamps drive current. The lamp includes a light emitting diode, an encapsulant, and a header. The diode includes a conductive silicon carbide substrate for electrical contact and a Group III nitride active portion on the silicon carbide substrate for generating desired frequency photons under the application of current across the diode. The header includes a reflective cup for supporting the diode and for providing electrical contact to the diode and to the active portion. The encapsulant includes a phosphor, present in at least portions of the encapsulant for generating responsive frequencies when the phosphor is excited by the frequencies emitted by the diode.
摘要翻译：公开了一种白色发光固态灯，其在20毫安驱动电流下具有至少75流明/瓦特的输出。灯包括发光二极管，密封剂和头。二极管包括用于电接触的导电碳化硅衬底和碳化硅衬底上的III族氮化物活性部分，用于在跨过二极管的电流施加下产生期望的频率光子。集管包括用于支撑二极管并用于提供与二极管和有源部分的电接触的反射杯。密封剂包括存在于密封剂的至少部分中的荧光体，用于当荧光体被二极管发射的频率激发时产生响应频率。

46. 发明授权

US08217412B2 Solid state lighting component 有权
标题翻译：固态照明组件
公开(公告)号：US08217412B2
公开(公告)日：2012-07-10
申请号：US12883979
申请日：2010-09-16
申请人： Thomas Yuan , Bernd Keller , James Ibbetson , Eric Tarsa , Gerald Negley
发明人： Thomas Yuan , Bernd Keller , James Ibbetson , Eric Tarsa , Gerald Negley
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/58 , H01L2224/48247 , H01L2224/73265 , H01L2924/01019 , H01L2924/181 , H05B33/0821 , H05B33/0857 , H01L2224/48091 , H01L2924/00014 , H01L2924/00012
摘要： An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.
摘要翻译：一种LED组件，包括安装在基座的平坦表面上的LED芯片的阵列，所述LED芯片能够响应于电信号而发光。 LED芯片包括以不同颜色的光发射的各个组，其中每个组以串联电路互连。 LED芯片中包含一个镜头。其他实施例可以包括散热结构，其包括与底座一体并且被布置成散发来自LED芯片的热量。

47. 发明申请

US20120043563A1 High Voltage Low Current Surface Emitting Light Emitting Diode 有权
标题翻译：高压低电流表面发光二极管
公开(公告)号：US20120043563A1
公开(公告)日：2012-02-23
申请号：US13190094
申请日：2011-07-25
申请人： James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
发明人： James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
IPC分类号： H01L27/15 , H01L33/08
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/62 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.
摘要翻译：一种发光二极管芯片，包括基座，底座上的反射层，与基座相反的反射层上的绝缘层，以及绝缘层上的多个子LED。每个子LED包括与子基座相邻的第一面和在子LED与绝缘层之间的第一面上的透明触点和相邻的子LED之间的电互连。

48. 发明授权

US07985970B2 High voltage low current surface-emitting LED 有权
标题翻译：高压低电流表面发光LED
公开(公告)号：US07985970B2
公开(公告)日：2011-07-26
申请号：US12418816
申请日：2009-04-06
申请人： James Ibbetson , Sten Heikman
发明人： James Ibbetson , Sten Heikman
IPC分类号： H01L21/02
CPC分类号： H01L27/153 , H01L33/0079 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.
摘要翻译：公开了一种单片LED芯片，其包括安装在基座上的多个接头或子LED（“sub-LED”）。子LED串联连接，使得驱动子LED所需的电压取决于串联连接的子LED的数量和子LED的结电压。还公开了制造单片LED芯片的方法，其中一种方法包括在底座上提供单结LED并将单结LED分离成多个子LED。子LED然后串联互连，使得驱动子LED所需的电压取决于串联的子LED的数量和子LED的结电压。

49. 发明申请

US20100140637A1 Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration 有权
标题翻译：具有侧向配置的电介质镜的发光二极管
公开(公告)号：US20100140637A1
公开(公告)日：2010-06-10
申请号：US12329722
申请日：2008-12-08
申请人： Matthew Donofrio , John Edmond , James Ibbetson , Ting Li
发明人： Matthew Donofrio , John Edmond , James Ibbetson , Ting Li
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/38 , H01L33/145 , H01L33/42 , H01L33/46
摘要： A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.
摘要翻译：公开了一种发光二极管，其包括有源结构，有源结构上的第一欧姆接触和与第一欧姆接触相对的有源结构上的透明导电氧化物层。透明导电氧化物层具有比所述活性结构更大的占地面积。电介质反射镜位于与所述有源结构相对的透明导电氧化物层上，并且第二触点位于与电介质反射镜相对的透明导电氧化物层上并与有源结构分离。

50. 外观设计

USD616839S1 LED chip 有权
标题翻译： LED芯片
公开(公告)号：USD616839S1
公开(公告)日：2010-06-01
申请号：US29327793
申请日：2008-11-13
申请人： John Edmond , David Beardsley Slater, Jr. , Amber Christine Salter , Ashay Chitnis , James Ibbetson , Bernd Peter Keller
设计人： John Edmond , David Beardsley Slater, Jr. , Amber Christine Salter , Ashay Chitnis , James Ibbetson , Bernd Peter Keller

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