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41. 发明申请

US20110220977A1 SEMICONDUCTOR DEVICES WITH BURIED BIT LINES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：带有双绞线的半导体器件及制造半导体器件的方法
公开(公告)号：US20110220977A1
公开(公告)日：2011-09-15
申请号：US12760140
申请日：2010-04-14
申请人： Jae-Man Yoon , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim , Yong-Chul Oh
发明人： Jae-Man Yoon , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim , Yong-Chul Oh
IPC分类号： H01L27/108 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/108 , H01L21/84 , H01L27/10817 , H01L27/10876 , H01L27/10894 , H01L27/1203 , H01L29/7833
摘要： A semiconductor device, comprising: a vertical pillar transistor (VPT) formed on a silicon-on-insulator (SOI) substrate, the VPT including a body that has a lower portion and an upper portion, a source/drain node disposed at an upper end portion of the upper portion of the body and a drain/source node disposed at the lower portion of the body; a buried bit line (BBL) formed continuously on sidewalls and an upper surface of the lower portion, the BBL includes metal sificide; and a word line that partially enclosing the upper portion of the body of the VPT, wherein the BBL extends along a first direction and the word line extends in a second direction substantially perpendicular to the first direction. An offset region is disposed immediately beneath the word line.
摘要翻译：一种半导体器件，包括：形成在绝缘体上硅（SOI））衬底上的垂直立柱晶体管（VPT），所述VPT包括具有下部和上部的主体，设置在上部的源极/漏极节点本体的上部的端部和设置在主体的下部的排水/源节点; 在侧壁和下部的上表面上连续形成的埋置位线（BBL），BBL包括金属微孔; 以及字线，其部分地包围VPT的主体的上部，其中，BBL沿着第一方向延伸，并且字线在基本上垂直于第一方向的第二方向上延伸。偏移区域设置在字线的正下方。

42. 发明授权

US07999309B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07999309B2
公开(公告)日：2011-08-16
申请号：US12385433
申请日：2009-04-08
申请人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/0688 , H01L21/8221
摘要： In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern.
摘要翻译：在半导体器件和相关方法中，半导体器件包括衬底，衬底上的绝缘层，绝缘层上的导电结构，导电结构包括至少一种金属硅化物膜图案，导电结构上的半导体图案，所述半导体图案从所述导电结构向上突出，栅电极至少部分地封装所述半导体图案，所述栅电极与所述导电结构间隔开，所述半导体图案的下部的第一杂质区域和所述第二杂质区域在半导体图案的上部。

43. 发明申请

US20110101445A1 SUBSTRATE STRUCTURES INCLUDING BURIED WIRING, SEMICONDUCTOR DEVICES INCLUDING SUBSTRATE STRUCTURES, AND METHOD OF FABRICATING THE SAME 有权
标题翻译：包括布线布线的基板结构，包括基板结构的半导体器件及其制造方法
公开(公告)号：US20110101445A1
公开(公告)日：2011-05-05
申请号：US12902247
申请日：2010-10-12
申请人： Kang-Uk Kim , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
发明人： Kang-Uk Kim , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
IPC分类号： H01L29/78 , H01L23/52 , H01L21/44
CPC分类号： H01L21/02002 , H01L21/185 , H01L21/743 , H01L23/53242 , H01L23/53257 , H01L27/1052 , H01L27/10876 , H01L27/10885 , H01L27/10894 , H01L27/11521 , H01L27/11526 , H01L27/11531 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate structure including a first substrate and a second substrate, and a buried wiring interposed between the first substrate and the second structure, where the buried wiring is in direct contact with the second substrate. The semiconductor device further includes a vertical transistor located in the second substrate of the substrate structure. The vertical transistor includes a gate electrode and a semiconductor pillar, and the buried wiring is one of source electrode or a drain electrode of the vertical transistor
摘要翻译：半导体器件包括包括第一衬底和第二衬底的衬底结构，以及插入在第一衬底和第二结构之间的掩埋布线，其中掩埋布线与第二衬底直接接触。半导体器件还包括位于衬底结构的第二衬底中的垂直晶体管。垂直晶体管包括栅极和半导体柱，并且埋入布线是垂直晶体管的源电极或漏极之一

44. 发明申请

US20110068384A1 Semiconductor Device Comprising Buried Word Lines 有权
标题翻译：包含掩埋字线的半导体器件
公开(公告)号：US20110068384A1
公开(公告)日：2011-03-24
申请号：US12719493
申请日：2010-03-08
申请人： Hui-Jung Kim , Yong-Chul Oh , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Hui-Jung Kim , Yong-Chul Oh , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L27/108
CPC分类号： H01L27/10891 , H01L27/0207 , H01L27/10817 , H01L27/10885 , H01L29/4236
摘要： A semiconductor device includes: an isolation layer for defining a plurality of active areas of a substrate, where the isolation layer is disposed on the substrate; a plurality of buried word lines having upper surfaces that are lower than the upper surfaces of the active areas, being surrounded by the active areas, and extending in a first direction parallel to a main surface of the substrate; a gate dielectric film interposed between the buried word lines and the active areas; and a plurality of buried bit lines having upper surfaces that are lower than the upper surfaces of the plurality of buried word lines and extending parallel to the main surface of the substrate in a second direction that differs from the first direction.
摘要翻译：半导体器件包括：用于限定衬底的多个有源区的隔离层，其中隔离层设置在衬底上; 具有比有源区域的上表面低的上表面的多个掩埋字线被有源区域包围，并且沿与基板的主表面平行的第一方向延伸; 介于掩埋字线和有源区之间的栅介质膜; 以及多个掩埋位线，其具有比所述多个掩埋字线的上表面低的上表面，并且在与所述第一方向不同的第二方向上平行于所述基板的主表面延伸。

45. 发明授权

US07902026B2 Method of fabricating semiconductor device having vertical channel transistor 失效
标题翻译：制造具有垂直沟道晶体管的半导体器件的方法
公开(公告)号：US07902026B2
公开(公告)日：2011-03-08
申请号：US12314139
申请日：2008-12-04
申请人： Hyun-Woo Chung , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Gi Kim , Kang-Uk Kim
发明人： Hyun-Woo Chung , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66545 , H01L21/76237 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： A method of fabricating a semiconductor device having a vertical channel transistor, the method including forming a hard mask pattern on a substrate, forming a preliminary active pillar by etching the substrate using the hard mask pattern as an etch mask, reducing a width of the preliminary active pillar to form an active pillar having a width less than that of the hard mask pattern, forming a lower source/drain region by implanting impurity ions into the substrate adjacent to the active pillar using the hard mask pattern as an ion implantation mask, and forming an upper source/drain region on the active pillar and vertically separated from the lower source/drain region.
摘要翻译：一种制造具有垂直沟道晶体管的半导体器件的方法，所述方法包括在衬底上形成硬掩模图案，通过使用硬掩模图案作为蚀刻掩模蚀刻衬底来形成预活性柱，从而减小初步活性柱以形成宽度小于硬掩模图案的有源柱，通过使用硬掩模图案作为离子注入掩模将杂质离子注入邻近有源柱的衬底中来形成下源极/漏极区域，以及在有源柱上形成上部源极/漏极区域，并与下部源极/漏极区域垂直分离。

46. 发明授权

US08786009B2 Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the same 有权
标题翻译：包括埋地布线的衬底结构，包括衬底结构的半导体器件及其制造方法
公开(公告)号：US08786009B2
公开(公告)日：2014-07-22
申请号：US12902247
申请日：2010-10-12
申请人： Kang-Uk Kim , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
发明人： Kang-Uk Kim , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
IPC分类号： H01L29/78
CPC分类号： H01L21/02002 , H01L21/185 , H01L21/743 , H01L23/53242 , H01L23/53257 , H01L27/1052 , H01L27/10876 , H01L27/10885 , H01L27/10894 , H01L27/11521 , H01L27/11526 , H01L27/11531 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate structure including a first substrate and a second substrate, and a buried wiring interposed between the first substrate and the second structure, where the buried wiring is in direct contact with the second substrate. The semiconductor device further includes a vertical transistor located in the second substrate of the substrate structure. The vertical transistor includes a gate electrode and a semiconductor pillar, and the buried wiring is one of source electrode or a drain electrode of the vertical transistor.
摘要翻译：半导体器件包括包括第一衬底和第二衬底的衬底结构，以及插入在第一衬底和第二结构之间的掩埋布线，其中掩埋布线与第二衬底直接接触。半导体器件还包括位于衬底结构的第二衬底中的垂直晶体管。垂直晶体管包括栅极和半导体柱，并且埋入布线是垂直晶体管的源电极或漏极之一。

47. 发明授权

US08623724B2 Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistor 有权
标题翻译：制造半导体器件的方法，该半导体器件包括电连接到立柱晶体管的电容器
公开(公告)号：US08623724B2
公开(公告)日：2014-01-07
申请号：US13547318
申请日：2012-07-12
申请人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L21/8242
CPC分类号： H01L27/10817 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L28/91 , H01L29/78
摘要： A semiconductor device includes a first transistor, a second transistor, an insulation interlayer pattern and a capacitor. The first transistor is formed in a first region of a substrate. The first transistor has a pillar protruding upwardly from the substrate and an impurity region provided in an upper portion of the pillar. The second transistor is formed in a second region of the substrate. The insulation interlayer pattern is formed on the first region and the second region to cover the second transistor and expose an upper surface of the pillar. The insulation interlayer pattern has an upper surface substantially higher than the upper surface of the pillar in the first region. The capacitor is formed on the impurity region in the upper portion of the pillar and is electrically connected to the impurity region.
摘要翻译：半导体器件包括第一晶体管，第二晶体管，绝缘层间图案和电容器。第一晶体管形成在衬底的第一区域中。第一晶体管具有从基板向上突出的柱和设置在柱的上部的杂质区。第二晶体管形成在衬底的第二区域中。绝缘层间图案形成在第一区域和第二区域上以覆盖第二晶体管并暴露柱的上表面。绝缘层间图案具有比第一区域中的柱的上表面大得多的上表面。电容器形成在柱的上部的杂质区上并与杂质区电连接。

48. 发明授权

US08409953B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08409953B2
公开(公告)日：2013-04-02
申请号：US13194407
申请日：2011-07-29
申请人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L21/336 , H01L21/8239 , H01L21/8242 , H01L21/8244
CPC分类号： H01L27/0688 , H01L21/8221
摘要： In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern.
摘要翻译：在半导体器件和相关方法中，半导体器件包括衬底，衬底上的绝缘层，绝缘层上的导电结构，导电结构包括至少一种金属硅化物膜图案，导电结构上的半导体图案，所述半导体图案从所述导电结构向上突出，栅电极至少部分地封装所述半导体图案，所述栅电极与所述导电结构间隔开，所述半导体图案的下部的第一杂质区域和所述第二杂质区域在半导体图案的上部。

49. 发明授权

US08373214B2 Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices 有权
标题翻译：具有掩埋位线的半导体器件和制造半导体器件的方法
公开(公告)号：US08373214B2
公开(公告)日：2013-02-12
申请号：US12760140
申请日：2010-04-14
申请人： Jae-Man Yoon , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim , Yong-Chul Oh
发明人： Jae-Man Yoon , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim , Yong-Chul Oh
IPC分类号： H01L27/108
CPC分类号： H01L27/108 , H01L21/84 , H01L27/10817 , H01L27/10876 , H01L27/10894 , H01L27/1203 , H01L29/7833
摘要： A semiconductor device, comprising: a vertical pillar transistor (VPT) formed on a silicon-on-insulator (SOI) substrate, the VPT including a body that has a lower portion and an upper portion, a source/drain node disposed at an upper end portion of the upper portion of the body and a drain/source node disposed at the lower portion of the body; a buried bit line (BBL) formed continuously on sidewalls and an upper surface of the lower portion, the BBL includes metal sificide; and a word line that partially enclosing the upper portion of the body of the VPT, wherein the BBL extends along a first direction and the word line extends in a second direction substantially perpendicular to the first direction. An offset region is disposed immediately beneath the word line.
摘要翻译：一种半导体器件，包括：形成在绝缘体上硅（SOI））衬底上的垂直立柱晶体管（VPT），所述VPT包括具有下部和上部的主体，设置在上部的源极/漏极节点本体的上部的端部和设置在主体的下部的排水/源节点; 在侧壁和下部的上表面上连续形成的埋置位线（BBL），BBL包括金属微孔; 以及字线，其部分地包围VPT的主体的上部，其中，BBL沿着第一方向延伸，并且字线在基本上垂直于第一方向的第二方向上延伸。偏移区域设置在字线的正下方。

50. 发明授权

US08343831B2 Semiconductor device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08343831B2
公开(公告)日：2013-01-01
申请号：US13064628
申请日：2011-04-05
申请人： Kang-Uk Kim , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
发明人： Kang-Uk Kim , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
IPC分类号： H01L29/94
CPC分类号： H01L21/823487 , H01L21/823456
摘要： In a semiconductor device, the semiconductor device may include a first active structure, a first gate insulation layer, a first gate electrode, a first impurity region, a second impurity region and a contact structure. The first active structure may include a first lower pattern in a first region of a substrate and a first upper pattern on the first lower pattern. The first gate insulation layer may be formed on a sidewall of the first upper pattern. The first gate electrode may be formed on the first gate insulation layer. The first impurity region may be formed in the first lower pattern. The second impurity region may be formed in the first upper pattern. The contact structure may surround an upper surface and an upper sidewall of the first upper pattern including the second impurity region. Accordingly, the contact resistance between the contact structure and the second impurity region may be decreased and structural stability of the contact structure may be improved.
摘要翻译：在半导体器件中，半导体器件可以包括第一有源结构，第一栅极绝缘层，第一栅极电极，第一杂质区域，第二杂质区域和接触结构。第一有源结构可以包括在衬底的第一区域中的第一下部图案和第一下部图案上的第一上部图案。第一栅极绝缘层可以形成在第一上部图案的侧壁上。第一栅电极可以形成在第一栅极绝缘层上。第一杂质区域可以形成在第一下部图案中。第二杂质区域可以形成在第一上部图案中。接触结构可以围绕第一上部图案的上表面和上侧壁包括第二杂质区域。因此，可以降低接触结构和第二杂质区之间的接触电阻，并且可以提高接触结构的结构稳定性。

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