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41. 发明申请

US20080286975A1 PLATINUM NANODET ETCH PROCESS 有权
标题翻译：铂纳米粒子过程
公开(公告)号：US20080286975A1
公开(公告)日：2008-11-20
申请号：US11748196
申请日：2007-05-14
申请人： Ramakanth Alapati , Paul Morgan , Max Hineman
发明人： Ramakanth Alapati , Paul Morgan , Max Hineman
IPC分类号： H01L21/306
CPC分类号： H01L21/32134 , B82Y10/00 , H01L21/28273
摘要： A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.
摘要翻译：一种用于在绝缘层上选择性去除纳米晶体的方法。该方法包括在其上提供具有纳米晶体的绝缘层; 将纳米晶体暴露于包含游离基氯源，离子氯或二者的高密度等离子体，以修饰纳米晶体; 并用湿蚀刻剂去除修饰的纳米晶体。

42. 发明申请

US20070099397A1 Microfeature dies with porous regions, and associated methods and systems 审中-公开
标题翻译：具有多孔区域的微特征，以及相关的方法和系统
公开(公告)号：US20070099397A1
公开(公告)日：2007-05-03
申请号：US11634417
申请日：2006-12-04
申请人： Kyle Kirby , Paul Morgan
发明人： Kyle Kirby , Paul Morgan
IPC分类号： H01L21/00
CPC分类号： H01L21/76898 , H01L21/02126 , H01L21/02203 , H01L21/02321 , H01L21/02323 , H01L21/02337 , H01L21/02343 , H01L21/02351 , H01L21/31695 , H01L21/743 , H01L21/78
摘要： Microfeature dies with porous regions, and associated methods and systems are disclosed. A method in accordance with one embodiment of the invention includes forming a porous region between a die and a remainder portion of a microfeature workpiece, and separating the die from the remainder portion by removing at least a portion of the porous region. For example, the die can be removed from the remainder portion by making a cut at the porous region (e.g., with a rotating saw blade), etching material from the porous region, or directing a water jet at the porous region. In other embodiments, a porous region of the microfeature workpiece can receive conductive material to form a conductive pathway (e.g., a line and/or via) in the workpiece. In still further embodiments, the porous regions of the workpiece can be formed electrolytically with electrodes that are spaced apart from the workpiece and/or support relative movement between the electrodes and the workpiece.
摘要翻译：具有多孔区域的微特征模具以及相关方法和系统被公开。根据本发明的一个实施例的方法包括在模具和微特征工件的剩余部分之间形成多孔区域，并且通过去除多孔区域的至少一部分将模具与其余部分分离。例如，通过在多孔区域（例如，利用旋转的锯片）进行切割，从多孔区域蚀刻材料，或者在多孔区域引导水射流，可以将模具从剩余部分中除去。在其他实施例中，微特征工件的多孔区域可以接收导电材料以在工件中形成导电路径（例如，线路和/或通孔）。在另外的实施例中，可以用与工件间隔开的电极和/或支撑电极和工件之间的相对运动来电解形成工件的多孔区域。

43. 发明申请

US20050282301A1 Structure and method for field emitter tips 审中-公开
公开(公告)号：US20050282301A1
公开(公告)日：2005-12-22
申请号：US11209271
申请日：2005-08-23
申请人： Terry Gilton , Paul Morgan
发明人： Terry Gilton , Paul Morgan
IPC分类号： H01J1/05 , H01J1/14 , H01J1/304 , H01J1/38 , H01J1/48 , H01J9/02 , H01J9/38 , H01J19/06 , H01L21/00
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30403 , H01J2329/00
摘要： Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.

44. 发明申请

US20050198401A1 Efficiently virtualizing multiple network attached stores 审中-公开
标题翻译：有效地虚拟化多个网络连接的商店
公开(公告)号：US20050198401A1
公开(公告)日：2005-09-08
申请号：US10767593
申请日：2004-01-29
申请人： Edward Chron , Paul Morgan , Lance Russell
发明人： Edward Chron , Paul Morgan , Lance Russell
IPC分类号： G06F15/16
CPC分类号： H04L12/413
摘要： A method and structure for communicating in a communications network comprising at least one communication virtualizer; a plurality of network-attached store computers connected to the communication virtualizer, wherein the plurality of network-attached store computers are configured to appear as a single available network-attached store computer; and at least one client computer connected to the communication virtualizer.
摘要翻译：一种用于在包括至少一个通信虚拟器的通信网络中进行通信的方法和结构; 连接到通信虚拟器的多个连接网络的存储计算机，其中所述多个网络连接的存储计算机被配置为显示为单个可用的网络连接的存储计算机; 以及连接到通信虚拟器的至少一个客户端计算机。

45. 发明公开

US20240150610A1 Cationic-Stabilized Dispersions, Hybridized Cationic-Stabilized Dispersions, In-Mold Coated Articles Prepared Utilizing Such Stabilized Dispersions, and Methods for Manufacturing Same 审中-公开
公开(公告)号：US20240150610A1
公开(公告)日：2024-05-09
申请号：US18384990
申请日：2023-10-30
申请人： Paul Morgan , Brodie Wright
发明人： Paul Morgan , Brodie Wright
IPC分类号： C09D175/04 , C08G18/08 , C09D105/00 , C09D133/08 , C09D133/26 , C09D139/02 , C09D179/02
CPC分类号： C09D175/04 , C08G18/0814 , C09D105/00 , C09D133/08 , C09D133/26 , C09D139/02 , C09D179/02 , C08L2201/54
摘要： A cationic-stabilized dispersion for use in fabricating an in-mold coated article including at least one of a cationic-stabilized polyurethane dispersion, a cationic-stabilized acrylic dispersion, a cationic-stabilized polyacrylamide dispersion, a cationic-stabilized polyallylamine dispersion, a cationic-stabilized polyetheramine dispersion, and a cationic-stabilized chitosan dispersion.

46. 发明授权

US10604674B2 Cationic-stabilized dispersions, hybridized cationic-stabilized dispersions, in-mold coated articles prepared utilizing such stabilized dispersions, and methods for manufacturing same 有权
公开(公告)号：US10604674B2
公开(公告)日：2020-03-31
申请号：US16290069
申请日：2019-03-01
申请人： Paul Morgan , Brodie Wright
发明人： Paul Morgan , Brodie Wright
IPC分类号： C09D171/00 , C09D175/04 , C09D133/08 , C09D179/02 , C09D133/26 , C09D105/00 , C09D139/02 , C08G18/08
摘要： A cationic-stabilized dispersion for use in fabricating an in-mold coated article including at least one of a cationic-stabilized polyurethane dispersion, a cationic-stabilized acrylic dispersion, a cationic-stabilized polyacrylamide dispersion, a cationic-stabilized polyallylamine dispersion, a cationic-stabilized polyetheramine dispersion, and a cationic-stabilized chitosan dispersion.

47. 发明授权

US10227503B2 Cationic-stabilized dispersions, hybridized cationic-stabilized dispersions, in-mold coated articles prepared utilizing such stabilized dispersions, and methods for manufacturing same 有权
公开(公告)号：US10227503B2
公开(公告)日：2019-03-12
申请号：US15644742
申请日：2017-07-08
申请人： Paul Morgan , Brodie Wright
发明人： Paul Morgan , Brodie Wright
IPC分类号： C09D171/00 , C09D133/00 , C08K3/36 , C08K5/06 , C08K5/09 , C09D175/04 , C09D133/08 , C09D179/02 , C09D133/26 , C09D105/00 , C09D139/02 , C08G18/08
摘要： A cationic-stabilized dispersion for use in fabricating an in-mold coated article including at least one of a cationic-stabilized polyurethane dispersion, a cationic-stabilized acrylic dispersion, a cationic-stabilized polyacrylamide dispersion, a cationic-stabilized polyallylamine dispersion, a cationic-stabilized polyetheramine dispersion, and a cationic-stabilized chitosan dispersion.

48. 发明授权

US08603318B2 Method of selectively removing conductive material 有权
标题翻译：选择性去除导电材料的方法
公开(公告)号：US08603318B2
公开(公告)日：2013-12-10
申请号：US13098572
申请日：2011-05-02
申请人： Rita J. Klein , Dale W. Collins , Paul Morgan , Joseph N. Greeley , Nishant Sinha
发明人： Rita J. Klein , Dale W. Collins , Paul Morgan , Joseph N. Greeley , Nishant Sinha
IPC分类号： C25F3/16
CPC分类号： H01L21/67086 , B82Y30/00 , C23F1/02 , C23F1/10 , H01B1/122 , H01L21/32115 , H01L21/67075
摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with a surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to a dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.
摘要翻译：提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。将包含比被除去的导电金属更高的纳米颗粒的电解质溶液施加到基底上以相对于介电材料选择性地去除导电金属，而不施加外部电位或处理垫与基底的表面的接触。解决方案和方法可以应用于例如相对于电介质材料选择性去除导电金属层（例如，阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连）而不施加外部电位或接触具有衬底表面的处理衬垫。

49. 发明授权

US08513135B2 Methods of modifying oxide spacers 有权
标题翻译：修饰氧化物间隔物的方法
公开(公告)号：US08513135B2
公开(公告)日：2013-08-20
申请号：US13246050
申请日：2011-09-27
申请人： Joseph Neil Greeley , Paul Morgan , Mark Kiehlbauch
发明人： Joseph Neil Greeley , Paul Morgan , Mark Kiehlbauch
IPC分类号： H01L21/302
CPC分类号： H01L21/0337
摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.
摘要翻译：提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。

50. 发明授权

US08207576B2 Pitch reduced patterns relative to photolithography features 有权
公开(公告)号：US08207576B2
公开(公告)日：2012-06-26
申请号：US11669840
申请日：2007-01-31
申请人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
发明人： Luan Tran , William T Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K Abatchev , Gurtej S Sandhu , D. Mark Durcan
IPC分类号： H01L29/66 , H01L21/00 , G03F7/00
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

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