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41. 发明授权

US06404722B1 Method of increasing recording density and capacity of a compact disc 失效
标题翻译：提高光盘记录密度和容量的方法
公开(公告)号：US06404722B1
公开(公告)日：2002-06-11
申请号：US09706262
申请日：2000-11-03
申请人： Tzu-Feng Tseng , Wen-Rei Guo , Kuei-Yen Wu
发明人： Tzu-Feng Tseng , Wen-Rei Guo , Kuei-Yen Wu
IPC分类号： G11B700
CPC分类号： B82Y10/00 , G11B7/1365 , G11B7/1381 , G11B7/1387
摘要： A method of increasing recording density and capacity of a compact disc. The compact disc has a transparent substrate and a data-recording region on the transparent substrate. To perform data access, a laser light beam emitting from a light source transmits through the transparent substrate and is incident on the data recording region. By inserting a optical plate with a super-resolution near-field structure between the light source and the compact disc, the light intensity of the laser light beam is increased and the aperture of the laser light beam is reduced. Therefore, the recording dimension of data recording region on the compact disc is reduced, and the recording density and capacity of the compact disc is increased. The super-resolution near-field structure is formed of a first dielectric layer, a second dielectric layer and an active layer sandwiched between the first and second dielectric layers. The material of the active layer is selected from one of gallium, germanium, arsenic, selenium, indium, antimony (stibium), tellurium and silver or gallium oxide, germanium oxide, arsenic oxide, selenium oxide, indium oxide, antimony oxide, tellurium oxide and silver oxide.
摘要翻译：提高光盘的记录密度和容量的方法。光盘在透明基板上具有透明基板和数据记录区域。为了进行数据访问，从光源发射的激光束透过透明基板并入射到数据记录区域。通过在光源和光盘之间插入具有超分辨率近场结构的光学板，激光束的光强度增加，激光光束的孔径减小。因此，光盘上的数据记录区域的记录尺寸减小，并且光盘的记录密度和容量增加。超分辨率近场结构由夹在第一和第二介电层之间的第一电介质层，第二电介质层和有源层形成。活性层的材料选自镓，锗，砷，硒，铟，锑（锑），碲和银或氧化镓之一，氧化锗，氧化砷，氧化硒，氧化铟，氧化锑，氧化碲和氧化银。

42. 发明授权

US06391395B1 Method of fabricating a polysilicon layer 失效
标题翻译：制造多晶硅层的方法
公开(公告)号：US06391395B1
公开(公告)日：2002-05-21
申请号：US09695438
申请日：2000-10-23
申请人： Tzu-Feng Tseng , Yi-Ming Chen , Wen-Rei Guo
发明人： Tzu-Feng Tseng , Yi-Ming Chen , Wen-Rei Guo
IPC分类号： H05H102
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L29/6675 , H01L29/78633
摘要： The present invention is directed to a method of forming a polysilicon layer. A light shield layer having a super-resolution near-field structure is arranged on an amorphous silicon layer. The super-resolution near-field structure includes a first dielectric layer, a second dielectric layer, and an active layer between the first dielectric layer and the second dielectric layer. The light shield layer is irradiated by a laser beam having a first intensity to generate a transmitted laser beam having a second intensity. The second intensity is greater than the first intensity. An annealing process is performed to irradiate the amorphous silicon layer with the transmitted laser beam having a second intensity thereby converting the amorphous silicon layer into a polysilicon layer.
摘要翻译：本发明涉及一种形成多晶硅层的方法。具有超分辨率近场结构的遮光层布置在非晶硅层上。超分辨率近场结构包括第一电介质层，第二电介质层和在第一介电层和第二介电层之间的有源层。光屏蔽层被具有第一强度的激光束照射以产生具有第二强度的透射激光束。第二强度大于第一强度。执行退火处理以用具有第二强度的透射激光束照射非晶硅层，从而将非晶硅层转化为多晶硅层。

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