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    • 43. 发明授权
    • Liquid crystal display device having particular connections among drain and pixel electrodes and contact hole
    • 液晶显示装置在漏极和像素电极与接触孔之间具有特定的连接
    • US07023501B2
    • 2006-04-04
    • US10412237
    • 2003-04-14
    • Byung Chul AhnByung Ho LimSoon Sung YooYong Wan KimYoung Hun Ha
    • Byung Chul AhnByung Ho LimSoon Sung YooYong Wan KimYoung Hun Ha
    • G02F1/136H01L29/04H01L29/12
    • G02F1/136213G02F2001/136231
    • A liquid crystal display device and a method of fabricating the same are disclosed. The device, as disclosed, reduces the number of masks required to fabricate. Thus, cost is reduced and yield is increased. The device includes a plurality of gate lines, a plurality of data lines crossing the gate lines such that active regions are defined near the crossover points, thin film transistors are formed near the active regions, and a plurality of pixel electrodes are formed within regions defined by the adjacent gate and data lines. Also, pixel electrodes overlap gate lines and the two electrodes function as a storage capacitor. A fabrication method includes forming a gate line; forming a data line region, protections layers, and an active area where drain and source electrodes are spaced apart a predetermined distance; forming a data line, a gate line protection layer, and a gate insulating layer; and forming pixel electrodes by depositing a transparent conductive material, such that each pixel electrode also overlaps a portion of a gate line.
    • 公开了一种液晶显示装置及其制造方法。 所公开的装置减少了制造所需的面罩数量。 因此,成本降低并且产量增加。 该器件包括多条栅极线,与栅极线交叉的多条数据线,使得在交叉点附近限定有源区,在有源区附近形成薄膜晶体管,并且在限定的区域内形成多个像素电极 通过相邻的门和数据线。 此外,像素电极与栅极线重叠,并且两个电极用作存储电容器。 制造方法包括形成栅极线; 形成数据线区域,保护层以及漏极和源极间隔开预定距离的有源区域; 形成数据线,栅极线保护层和栅极绝缘层; 以及通过沉积透明导电材料形成像素电极,使得每个像素电极也与栅极线的一部分重叠。
    • 44. 发明申请
    • Stripper Solution and Method of Manufacturing Liquid Crystal Display Using the Same
    • 剥离剂溶液及使用其的液晶显示器的制造方法
    • US20110266494A1
    • 2011-11-03
    • US13151845
    • 2011-06-02
    • Soon Sung YooOh Nam KwonHeung Lyul Cho
    • Soon Sung YooOh Nam KwonHeung Lyul Cho
    • C09K13/00
    • H01L27/1288H01L27/1214Y10S438/951
    • A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon film, and a metal film on the transparent dielectric substrate on which the gate electrode and the gate bus line are formed and etching the metal film, the amorphous silicon film, and the doped amorphous silicon film, and forming a pixel electrode by forming a protective film and a transparent metal film on the transparent dielectric substrate upon which the source/drain electrodes are formed and finely etching the transparent metal film through a lift-off process using a stripper solution.
    • 液晶显示器的制造方法包括:在透明电介质基板上同时形成栅极电极和栅极总线,同时形成沟道层,欧姆接触层,源极/漏极,形成栅极绝缘膜, 硅膜,掺杂非晶硅膜和金属膜,在其上形成栅极电极和栅极总线的透明介质基板上蚀刻金属膜,非晶硅膜和掺杂非晶硅膜,并形成 通过在形成源/漏电极的透明电介质基板上形成保护膜和透明金属膜,并通过使用剥离剂溶液的剥离工艺对透明金属膜进行微细蚀刻来形成像素电极。
    • 45. 发明授权
    • Shadow mask and manufacturing method thereof
    • 荫罩及其制造方法
    • US08007967B2
    • 2011-08-30
    • US11475110
    • 2006-06-27
    • Soon Sung YooOh Nam Kwon
    • Soon Sung YooOh Nam Kwon
    • H01J29/07
    • H05B33/10
    • Disclosed is a shadow mask having a fine slit that can improve precision and resolution of a pattern by reducing side etching during an etching process of a mask substrate, and a manufacturing method thereof. The shadow mask includes a mask substrate, a slit region formed by penetrating through the mask substrate, the slit region having a plurality of undercut portions at respective sides thereof, each undercut portion having a unit thickness, and a shadow region provided in the mask substrate, the shadow region corresponding to a region other than the slit region.
    • 公开了一种荫罩,其具有能够通过在掩模基板的蚀刻处理期间减少侧蚀刻而提高图案的精度和分辨率的细小狭缝及其制造方法。 荫罩包括掩模基板,穿过掩模基板形成的狭缝区域,狭缝区域各自具有多个底切部分,每个底切部分具有单位厚度,以及设置在掩模基板中的阴影区域 ,对应于除狭缝区域以外的区域的阴影区域。
    • 46. 发明授权
    • Stripper solution and method of manufacturing liquid crystal display using the same
    • 剥离剂溶液和使用其制造液晶显示器的方法
    • US07977250B2
    • 2011-07-12
    • US12837313
    • 2010-07-15
    • Soon Sung YooOh Nam KwonHeung Lyul Cho
    • Soon Sung YooOh Nam KwonHeung Lyul Cho
    • H01L21/302H01L21/461
    • H01L27/1288H01L27/1214Y10S438/951
    • A method for manufacturing a liquid crystal display includes simultaneously forming a gate electrode and a gate bus line on a transparent dielectric substrate, simultaneously forming a channel layer, an ohmic contact layer, and source/drain electrodes by forming a gate insulation film, an amorphous silicon film, a doped amorphous silicon film, and a metal film on the transparent dielectric substrate on which the gate electrode and the gate bus line are formed and etching the metal film, the amorphous silicon film, and the doped amorphous silicon film, and forming a pixel electrode by forming a protective film and a transparent metal film on the transparent dielectric substrate upon which the source/drain electrodes are formed and finely etching the transparent metal film through a lift-off process using a stripper solution.
    • 液晶显示器的制造方法包括:在透明电介质基板上同时形成栅极电极和栅极总线,同时形成沟道层,欧姆接触层,源极/漏极,形成栅极绝缘膜, 硅膜,掺杂非晶硅膜和金属膜,在其上形成栅极电极和栅极总线的透明介质基板上蚀刻金属膜,非晶硅膜和掺杂非晶硅膜,并形成 通过在形成源/漏电极的透明电介质基板上形成保护膜和透明金属膜,并通过使用剥离剂溶液的剥离工艺对透明金属膜进行微细蚀刻来形成像素电极。
    • 50. 发明授权
    • Thin film transistor substrate using horizontal electric field and fabricating method thereof
    • 使用水平电场的薄膜晶体管基板及其制造方法
    • US07576822B2
    • 2009-08-18
    • US10978431
    • 2004-11-02
    • Soon Sung YooHeung Lyul Cho
    • Soon Sung YooHeung Lyul Cho
    • G02F1/1343
    • G02F1/13439G02F1/134363G02F1/136286G02F2001/136295
    • A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a common line formed parallel with each other from a first conductive layer on the substrate; a gate insulating film formed on the substrate, the gate line and the first common line; a data line formed from a second conductive layer on the gate insulating film, the data line crossing the gate line and the common line to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed connected to the common line from a third conductive layer, the common electrode being disposed within a first hole through the protective film and the gate insulating film; and a pixel electrode connected to the thin film transistor and formed from a third conductive layer, the pixel electrode being disposed within a second hole through the protective film and the gate insulating film at the pixel area, the pixel electrode and the common electrode being disposed to define a horizontal electric field.
    • 用于使用水平电场的薄膜晶体管衬底结构包括:衬底; 由基板上的第一导电层彼此平行地形成的栅极线和公共线; 形成在基板上的栅极绝缘膜,栅极线和第一公共线; 由栅极绝缘膜上的第二导电层形成的数据线,与栅极线和公共线交叉的数据线,以限定像素区域; 连接到栅极线和数据线的薄膜晶体管; 覆盖数据线和薄膜晶体管的保护膜; 从第三导电层连接到公共线的公共电极,公共电极设置在通过保护膜和栅极绝缘膜的第一孔内; 以及像素电极,与所述薄膜晶体管连接,由第三导电层形成,所述像素电极配置在所述像素区域内的所述保护膜和所述栅极绝缘膜的第二孔内,所述像素电极和所述公共电极被配置 以定义水平电场。