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    • 47. 发明授权
    • Millimeter-wave cascode amplifier gain boosting technique
    • 毫米波共源共栅放大器增益提升技术
    • US07489201B2
    • 2009-02-10
    • US11801363
    • 2007-05-09
    • Saikat SarkarPadmanava SenStephane PinelJoy Laskar
    • Saikat SarkarPadmanava SenStephane PinelJoy Laskar
    • H03F3/04
    • H03F1/22H03F3/191H03F3/60H03F2200/181H03F2200/222H03F2200/318H03F2200/387
    • Disclosed is a gain boosting technique for use with millimeter-wave cascode amplifiers. The exemplary technique may be implemented using a 0.18 μm SiGe process (FT=140 GHz). It has also been shown that the technique is effective for CMOS processes with comparable FT. An exemplary gain-enhanced cascode stage was measured to have higher than 9 dB gain with a 1-dB bandwidth above 6 GHz with a DC power consumption of 13 mW. In addition, one cascode stage without gain boosting may be cascaded with two gain-boosted cascode amplifier stages to implement a three-stage LNA. The measured stable gain is higher than 24 dB at 60 GHz with a 3-dB bandwidth of 3.1 GHz for 25 mW of DC power consumption. It is believed that this is the first 60 GHz LNA with a higher than 20 dB gain using a 0.18 μm SiGe process.
    • 公开了一种用于毫米波共源共栅放大器的增益技术。 可以使用0.18μmSiGe工艺(FT = 140GHz)来实现示例性技术。 还已经表明,该技术对于具有相当的FT的CMOS工艺是有效的。 测量一个示例性的增益增益共源共栅级,具有高于9 dB的增益,1 GHz带宽高于6 GHz,直流功耗为13 mW。 另外,没有增益升压的一个级联级可以与两个增益升压的共源共栅放大器级级联以实现三级LNA。 测量的稳定增益在60 GHz时高于24 dB,对于25 mW的直流功耗,3.1 GHz的3 dB带宽。 相信这是使用0.18 mum SiGe工艺的第一个60 GHz LNA,具有高于20 dB的增益。