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41. 发明申请

US20090253222A1 Etching process state judgment method and system therefor 有权
标题翻译：蚀刻过程状态判断方法及其系统
公开(公告)号：US20090253222A1
公开(公告)日：2009-10-08
申请号：US12385273
申请日：2009-04-03
申请人： Toshihiro Morisawa , Shoji Ikuhara , Akira Kagoshima , Daisuke Shiraishi
发明人： Toshihiro Morisawa , Shoji Ikuhara , Akira Kagoshima , Daisuke Shiraishi
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L22/26 , G01B11/0658 , G01B11/0683 , G01B11/24 , G01B2210/56 , G01J3/443 , G01N21/67 , G01N2021/8411 , H01L2924/0002 , H01L2924/00
摘要： An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process.A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.
摘要翻译：一种蚀刻处理状态判断方法，包括：光谱数据获取步骤，其中通过在多个晶片的蚀刻处理期间监测光发射来获得光发射光谱分布; 峰值检测步骤，其中在蚀刻处理期间的特定时间点从光发射光谱分布检测峰值，以获得峰值特性; 共同峰识别步骤，其中在峰值检测步骤中检测到的峰中识别晶片共同的峰值; 以及状态检测步骤，其中相对于共同峰值比较特性，以检测蚀刻处理中的每个晶片的状态。通过简单的方法，无需假定物质，从蚀刻工艺时的光发射光谱分布中检测蚀刻工艺的状态（异常或正常状态）。

42. 发明授权

US09110461B2 Semiconductor manufacturing equipment 有权
标题翻译：半导体制造设备
公开(公告)号：US09110461B2
公开(公告)日：2015-08-18
申请号：US13612937
申请日：2012-09-13
申请人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
发明人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
IPC分类号： G05B19/18 , G05B19/418
CPC分类号： G05B19/4184 , G05B2219/32191 , G05B2219/45031 , Y02P90/14 , Y02P90/22
摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.
摘要翻译：半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。

43. 发明申请

US20130173042A1 SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
标题翻译：半导体制造设备
公开(公告)号：US20130173042A1
公开(公告)日：2013-07-04
申请号：US13612937
申请日：2012-09-13
申请人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
发明人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
IPC分类号： G05B19/18
CPC分类号： G05B19/4184 , G05B2219/32191 , G05B2219/45031 , Y02P90/14 , Y02P90/22
摘要： Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a contribution ratio.
摘要翻译：半导体制造设备包括：控制半导体制造设备的各个部分的驱动和处理的控制器，以及监测半导体制造设备中的每个物理量的传感器或每个化学响应量的状态; 数据库以及算术部，其执行：读出设备数据，基于要比较的多条信号数据计算时间点之间的相关矩阵，从所述相关矩阵计算特征值和特征向量，以及通过主成分分析; 对主成分的特征值的大小进行比较处理，按照降序排列本征值，显示其列表; 以及处理显示散射图，其中各个信号的主分量分数被绘制在选择与具有贡献率的本征值相对应的主分量的特征空间中。

44. 发明申请

US20120310403A1 ETCHING APPARATUS, CONTROL SIMULATOR,AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：蚀刻设备，控制模拟器和半导体器件制造方法
公开(公告)号：US20120310403A1
公开(公告)日：2012-12-06
申请号：US13514708
申请日：2010-12-03
申请人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
发明人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
IPC分类号： G05B19/18
CPC分类号： H01J37/32972 , H01J37/32935
摘要： Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ΔX as an input and ΔY as an output. In etching process control, ΔX (manipulated volume) is calculated from ΔY (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.
摘要翻译：基于用于确定来自蚀刻装置的致动器值X的波长的光发射强度值Y的模型，从Y计算X以实现对Y的优选的运行到运行控制.X和Y之间的关系被定义为对照基于具有＆Dgr; X作为输入的代数表达式的模型（矩阵模型C1，比率约束模型C2）和＆Dgr; Y作为输出。在蚀刻过程控制中，使用基于非控制光发射强度值Y的控制模型从＆Dgr; Y（受控体积）计算＆Dgr; X（操纵体积）以设定用于蚀刻工艺的X（S1）在此期间Y被监控。基于Y的实际值，计算在下一个晶片蚀刻工艺中使用的非控制光发射强度值Y.

45. 发明申请

US20090211706A1 ETCHING ENDPOINT DETERMINATION METHOD 有权
标题翻译：蚀刻端点确定方法
公开(公告)号：US20090211706A1
公开(公告)日：2009-08-27
申请号：US12189883
申请日：2008-08-12
申请人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
发明人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
IPC分类号： C23F1/00
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step. An endpoint of etching processing is determined based in the distances in the time-base direction obtained at the second step.
摘要翻译：精确地检测在蚀刻终点附近发生的发光强度的微观变化，从而快速确定蚀刻的终点。一种蚀刻终点确定方法，用于确定将处理气体引入真空室的等离子体蚀刻装置中的蚀刻处理的终点，通过向引入的处理气体供给高频能量来产生等离子体，并使用所产生的等离子体进行等离子体处理在存储在所述室中的工件上包括：对由所述真空室中产生的等离子体发射的光进行预设波长的光的采样的步骤，获取特定波长的采样光的发光强度作为时序数据，并基于获取的时间序列数据计算回归线; 以及在第一步骤获得的回归线和时间序列数据之间计算时基方向上的距离的步骤。基于在第二步骤获得的时基方向上的距离来确定蚀刻处理的终点。

46. 发明授权

US08992721B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08992721B2
公开(公告)日：2015-03-31
申请号：US12696571
申请日：2010-01-29
申请人： Akira Kagoshima , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
发明人： Akira Kagoshima , Daisuke Shiraishi , Satomi Inoue , Shigeru Nakamoto , Shoji Ikuhara , Toshihiro Morisawa
IPC分类号： G05B13/04 , H01J37/32
CPC分类号： H01J37/32926 , G05B13/048 , G05B2219/31357 , H01J37/32935
摘要： A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.
摘要翻译：一种等离子体处理装置，包括：监视器，其监视在等离子体处理时产生的处理量; 监视值估计单元，其具有监视量变化模型，用于根据处理样本的数量存储处理量的监视值的变化，并且通过参考监视量变化估计下一个样本的处理的监视值楷模; 以及控制量计算单元，其存储用于控制真空处理装置的处理量的控制量与监视值之间的关系，并且基于估计监视值与目标值的偏差来计算控制量，从而控制下一个试样的加工量。因此，表示处理处理装置的状态的变化的处理模型可以在这样的运行控制中被添加到控制回路中，即，根据每个晶片处理改变处理条件，从而甚至可以获得稳定的处理结果当过程发生变化时。

47. 发明授权

US08924001B2 Etching apparatus, control simulator, and semiconductor device manufacturing method 有权
标题翻译：蚀刻装置，控制模拟器和半导体器件制造方法
公开(公告)号：US08924001B2
公开(公告)日：2014-12-30
申请号：US13514708
申请日：2010-12-03
申请人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
发明人： Toshihiro Morisawa , Daisuke Shiraishi , Satomi Inoue , Akira Kagoshima
IPC分类号： G06F19/00 , H01J37/32
CPC分类号： H01J37/32972 , H01J37/32935
摘要： Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ΔX as an input and ΔY as an output. In etching process control, ΔX (manipulated volume) is calculated from ΔY (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.
摘要翻译：基于用于确定来自蚀刻装置的致动器值X的波长的光发射强度值Y的模型，从Y计算X以实现对Y的优选的运行到运行控制.X和Y之间的关系被定义为对照基于具有＆Dgr; X作为输入的代数表达式的模型（矩阵模型C1，比率约束模型C2）和＆Dgr; Y作为输出。在蚀刻过程控制中，使用基于非控制光发射强度值Y的控制模型从＆Dgr; Y（受控体积）计算＆Dgr; X（操纵体积）以设定用于蚀刻工艺的X（S1）在此期间Y被监控。基于Y的实际值，计算在下一个晶片蚀刻工艺中使用的非控制光发射强度值Y.

48. 发明授权

US08784677B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08784677B2
公开(公告)日：2014-07-22
申请号：US12856725
申请日：2010-08-16
申请人： Daisuke Shiraishi , Akira Kagoshima , Satomi Inoue , Shigeru Nakamoto
发明人： Daisuke Shiraishi , Akira Kagoshima , Satomi Inoue , Shigeru Nakamoto
IPC分类号： H01L21/66 , H01L21/465
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32972 , H01L21/31122
摘要： A plasma processing apparatus for applying an etching processing to a wafer by using at least two steps of the etching processing which operate with plasma formed within a pressure-reduced processing chamber, the wafer being located within the processing chamber inside a vacuum vessel, and having a mask on a silicon-composed substrate and a film structure, the film structure including processing-target films located under the mask, wherein the plasma processing apparatus is equipped with a function for processing another different wafer in such a manner that a processing condition at a precedent-stage step of the two steps of the etching processing in the processing of the different wafer is adjusted based on a result obtained by detecting a time which has elapsed until termination of a subsequent-stage step of the two steps of the etching processing.
摘要翻译：一种等离子体处理装置，其通过使用在减压处理室内形成的等离子体进行蚀刻处理的至少两个步骤对晶片施加蚀刻处理，所述晶片位于真空容器内的处理室内，并且具有硅构成基板上的掩模和膜结构，所述膜结构包括位于掩模下方的处理目标膜，其中所述等离子体处理装置具有用于处理另一不同晶片的功能，基于通过检测经过的时间直到蚀刻处理的两个步骤的后续步骤的结束为止，调整在不同晶片的处理中的蚀刻处理的两个步骤的前两级步骤。

49. 发明申请

US20120085494A1 Plasma Etching Apparatus 审中-公开
标题翻译：等离子蚀刻装置
公开(公告)号：US20120085494A1
公开(公告)日：2012-04-12
申请号：US13325563
申请日：2011-12-14
申请人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
发明人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
IPC分类号： C23F1/08
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A plasma etching apparatus includes a vacuum processing chamber for performing plasma processing on a workpiece, a gas introducer, a high frequency power feeder, a spectroscope, and an arithmetic unit for determining an endpoint of etching of the workpiece. The arithmetic unit includes a regression line computing unit for computing a regression line on the basis of time-sequential data of luminous intensity of a specific wavelength sampled by the spectroscope, a distance computing unit for computing a distance from the time-sequential data to the regression line, a computing unit for calculating a distance in a time-base direction by computing a slope of the regression line, and the distance from the time-sequential data to the regression line, computed by the distance computing unit, and an endpoint determiner for outputting an endpoint determination signal on the basis of the distance in the time-base direction computed by the computing unit.
摘要翻译：等离子体蚀刻装置包括用于对工件进行等离子体处理的真空处理室，气体导入器，高频供电器，分光镜和用于确定工件的蚀刻终点的运算单元。算术单元包括：回归线计算单元，用于基于由分光镜采样的特定波长的发光强度的时间序列数据计算回归线;距离计算单元，用于计算从时序数据到回归线，用于通过计算回归线的斜率以及由距离计算单元计算的从时间序列数据到回归线的距离来计算时基方向上的距离的计算单元，以及端点确定器用于基于由计算单元计算的时基方向上的距离来输出端点确定信号。

50. 发明申请

US20050217794A1 Semiconductor manufacturing apparatus and method for assisting monitoring and analysis of the same 审中-公开
标题翻译：用于辅助其监测和分析的半导体制造装置和方法
公开(公告)号：US20050217794A1
公开(公告)日：2005-10-06
申请号：US10875232
申请日：2004-06-25
申请人： Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi
发明人： Akira Kagoshima , Shoji Ikuhara , Daisuke Shiraishi
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/32 , H01L21/02
CPC分类号： H01J37/32935 , H01J37/32972
摘要： To provide a semiconductor manufacturing apparatus that can easily and quickly monitor and analyze the state of a semiconductor processing apparatus and a method for assisting the monitoring and analysis thereof. A semiconductor manufacturing apparatus includes: detecting means 7, 8 that detects, as a plurality of state signals, at least either of a plurality of spectra obtained by separating plasma light emission generated in a processing chamber 2 of a semiconductor processing apparatus 1 or a plurality of apparatus state signals that indicate states of the apparatus; apparatus event information output means 9 that outputs the state of the semiconductor processing apparatus in a current process step; conversion means 14, 17, 18 that converts a combination of the plurality of state signals detected by the detecting means 7, 8 into respective particular figures; and display position controlling means 20 that displays the figures generated by the conversion means 14, 17, 18 at predetermined display positions associated with the process step.
摘要翻译：提供一种半导体制造装置，其可以容易且快速地监视和分析半导体处理装置的状态和辅助其监视和分析的方法。半导体制造装置包括：检测装置7,8，其检测通过分离在半导体处理装置1的处理室2或多个处理室2中产生的等离子体发光而获得的多个光谱中的至少一个作为多个状态信号指示装置的状态的装置状态信号; 装置事件信息输出装置9，其在当前处理步骤中输出半导体处理装置的状态; 转换装置14,17,18将由检测装置7,8检测的多个状态信号的组合转换成相应的特定图形; 以及显示位置控制装置20，其将由转换装置14,17,18生成的图形显示在与处理步骤相关联的预定显示位置处。

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