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41. 发明申请

US20140141253A1 METHOD OF MANUFACTURING MULTILAYER BODY, METHOD OF PROCESSING SUBSTRATE, AND MULTILAYER BODY 审中-公开
标题翻译：制造多层体的方法，加工底物的方法和多层体
公开(公告)号：US20140141253A1
公开(公告)日：2014-05-22
申请号：US14127315
申请日：2012-05-31
申请人： Yasushi Fujii , Tatsuhiro Mitake , Atsushi Matsushita
发明人： Yasushi Fujii , Tatsuhiro Mitake , Atsushi Matsushita
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/26 , C23C16/505 , H01L21/0212 , H01L21/02274 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/68331 , H01L2221/6834 , H01L2221/68381 , Y10T428/31504
摘要： A method for forming a release layer which lies between a substrate and a supporting member and has a property that changes when the release layer absorbs light coming through the supporting member, by carrying out plasma CVD with a high-frequency power that is set so as to be higher than a power at which a mode jump occurs.
摘要翻译：一种形成剥离层的方法，该剥离层位于基板和支撑构件之间，并且具有当剥离层吸收通过支撑构件的光时改变的性质，通过以设定为高的功率进行等离子体CVD 高于发生模式跳转的功率。

42. 发明申请

US20130088581A1 AV SYSTEM 有权
标题翻译： AV系统
公开(公告)号：US20130088581A1
公开(公告)日：2013-04-11
申请号：US13806613
申请日：2010-10-06
申请人： Kanehide Arai , Yasushi Fujii , Makoto Oi
发明人： Kanehide Arai , Yasushi Fujii , Makoto Oi
IPC分类号： H04N5/232 , H04N13/04 , H04N5/66
CPC分类号： H04N5/23293 , G06T7/73 , G06T2207/30204 , H04N5/66 , H04N13/332 , H04S7/304
摘要： An AV system that executes image recognition of an identification mark 9 provided on headphones 8 in a seat side shot image taken with a camera 2, calculates the coordinate position of the identification mark 9 in the shot image, decides from the coordinate position of the identification mark 9 as to which one of a plurality of seats a user wearing the headphones 8 sits on, and transmits audio data which corresponds to video data to be displayed on the display screen facing the seat, as to which a decision is made that the user sits on, to the headphones 8 to be produced as audio output.
摘要翻译：在照相机2拍摄的座椅侧拍摄图像中执行设置在耳机8上的识别标记9的图像识别的AV系统，计算拍摄图像中的识别标记9的坐标位置，从标识的坐标位置关于穿戴耳机8的用户的多个座位中的哪个座位的标记9，并且发送对应于要在面向座椅的显示屏幕上显示的视频数据的音频数据，作出哪个判定为用户坐在耳机8上作为音频输出。

43. 发明申请

US20120260949A1 LIQUID PROCESSING METHOD, LIQUID PROCESSING APPARATUS AND STORAGE MEDIUM 有权
标题翻译：液体加工方法，液体加工设备和储存介质
公开(公告)号：US20120260949A1
公开(公告)日：2012-10-18
申请号：US13446255
申请日：2012-04-13
申请人： Kenji SEKIGUCHI , Yasushi FUJII , Tetsuya SAKAZAKI
发明人： Kenji SEKIGUCHI , Yasushi FUJII , Tetsuya SAKAZAKI
IPC分类号： B08B3/08 , B08B9/093 , B08B3/02
CPC分类号： H01L21/67051 , C11D7/5004 , C11D11/0047 , H01L21/02057 , H01L21/76898
摘要： Disclosed is a liquid processing method capable of rapidly penetrating a liquid chemical into a concave portion formed on the surface of a substrate with the chemical liquid. The liquid processing method includes wetting the inside of the concave portion by supplying an organic solvent having surface tension smaller than the chemical liquid to the substrate, and cleaning the inside of the concave portion with the chemical liquid by supplying a cleaning liquid including the chemical liquid to the substrate and substituting the liquid inside the concave portion with the chemical liquid.
摘要翻译：公开了一种液体处理方法，其能够将化学液体迅速地渗透到形成在基板表面上的凹部中。液体处理方法包括通过向基板供给具有小于化学液体的表面张力的有机溶剂来润湿凹部的内部，并且通过提供包含化学液体的清洗液，用化学液体清洁凹部的内部并用化学液体代替凹部内的液体。

44. 发明申请

US20120118511A1 LAMINATE AND METHOD FOR SEPARATING THE SAME 审中-公开
标题翻译：层压体及其分离方法
公开(公告)号：US20120118511A1
公开(公告)日：2012-05-17
申请号：US13290412
申请日：2011-11-07
申请人： Hirofumi Imai , Koki Tamura , Atsushi Kubo , Takahiro Yoshioka , Yasushi Fujii , Yoshihiro Inao
发明人： Hirofumi Imai , Koki Tamura , Atsushi Kubo , Takahiro Yoshioka , Yasushi Fujii , Yoshihiro Inao
IPC分类号： B32B38/10 , B32B7/06 , B32B9/04
CPC分类号： B32B43/006 , B32B38/10 , B32B2310/0825 , B32B2457/14 , C08G77/14 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/68381 , Y10T156/1158 , Y10T156/1195 , Y10T428/31663
摘要： A laminate including a supporter which transmits infrared; a substrate supported by the supporter; an adhesive layer via which the supporter and the substrate are attached to each other; and a separation layer, positioned on a surface of the supporter to which surface the substrate is attached, and made of a compound having an infrared-absorbing structure.
摘要翻译：包括透射红外线的支撑体的层压体; 由支撑体支撑的基板; 粘合层，支撑体和基板通过该粘合层彼此附接; 以及分离层，其位于与所述基板的表面相连的所述支撑体的表面上，并且由具有红外线吸收结构的化合物制成。

45. 发明授权

US07902077B2 Semiconductor device manufacturing method that recovers damage of the etching target while supplying a predetermined recovery gas 失效
标题翻译：半导体器件制造方法，其在提供预定的回收气体的同时恢复蚀刻靶的损伤
公开(公告)号：US07902077B2
公开(公告)日：2011-03-08
申请号：US11564548
申请日：2006-11-29
申请人： Ryuichi Asako , Kaoru Maekawa , Yasushi Fujii
发明人： Ryuichi Asako , Kaoru Maekawa , Yasushi Fujii
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/3105 , H01L21/31138 , H01L21/67051 , H01L21/67069 , H01L21/67109 , H01L21/67178 , H01L21/67207 , H01L21/76814 , H01L21/76826
摘要： A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.
摘要翻译：半导体器件制造方法包括：在设置在半导体衬底上的蚀刻靶膜的表面上形成具有预定电路图案的蚀刻掩模; 通过蚀刻掩模蚀刻蚀刻目标膜，以在蚀刻靶膜中形成凹槽或孔; 通过包括至少使用含臭氧气体的方法的方法去除蚀刻掩模; 并且在提供预定的回收气体的同时恢复在蚀刻掩模去除之前或之中引起的蚀刻目标膜的损伤。

46. 发明申请

US20090130595A1 Thermoacid Generator for Antireflection Film Formation, Composition for Antireflection Film Formation, and Antireflection Film Made Therefrom 有权
标题翻译：用于防反射膜形成的热酸发生器，用于防反射膜形成的组合物和由此制成的抗反射膜
公开(公告)号：US20090130595A1
公开(公告)日：2009-05-21
申请号：US11916575
申请日：2006-05-24
申请人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
发明人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
IPC分类号： G03F7/004 , C07C69/017
CPC分类号： G03F7/091
摘要： A thermoacid generator for antireflective film formation, characterized by being represented by the following formula (1): (wherein R1 represents C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); R2 represents linear, branched, or cyclic C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl, C6-20 aryl, or C7-12 aralkyl or aryloxoalkyl; R3 represents hydrogen or alkyl; and Y− represents a non-nucleophilic counter ion); a composition for forming an antireflective film; and an antireflective film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflective film can inhibit an overlying photoresist film from generating a scum.
摘要翻译：用于抗反射膜形成的热酸发生器，其特征在于由下式（1）表示：（其中R 1表示C 1-20烷基，烯基，氧代烷基或氧代烯基（这些基团中的氢原子可被氟原子取代）; R 2表示直链，支链或环状C 1-20烷基，烯基，氧代烷基或氧代烯基，C 6-20芳基或C 7-12芳烷基或芳氧基烷基; R 3表示氢或烷基; Y-表示非亲核抗衡离子） ; 用于形成抗反射膜的组合物; 和由该组合物制成的抗反射膜。利用热酸发生器和组合物，可获得令人满意的耐蚀刻性和令人满意的防止短波长光反射（能够吸收短波长光）的能力。此外，抗反射膜可以抑制上覆的光致抗蚀剂膜产生浮渣。

47. 发明申请

US20070077768A1 Substrate processing method 失效
标题翻译：基板加工方法
公开(公告)号：US20070077768A1
公开(公告)日：2007-04-05
申请号：US11517272
申请日：2006-09-08
申请人： Yasushi Fujii , Takayuki Toshima , Takehiko Orii
发明人： Yasushi Fujii , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31058 , H01L21/02063 , H01L21/02126 , H01L21/3105 , H01L21/31111 , H01L21/31133 , H01L21/67051 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： A substrate processing method includes: performing an etching process to form a predetermined pattern on an etching-target film disposed on a substrate; denaturing a substance remaining after the etching process to be soluble in a predetermined liquid; then, performing a silylation process on a surface of the etching-target film having the pattern formed thereon; and then, supplying the predetermined liquid to dissolve and remove the denatured substance.
摘要翻译：衬底处理方法包括：在设置在衬底上的蚀刻靶膜上进行蚀刻处理以形成预定图案; 将蚀刻工序后剩余的物质变性为可溶于预定液体; 然后在其上形成有图案的蚀刻靶膜的表面上进行甲硅烷基化处理; 然后，供给预定液体以溶解并除去变性物质。

48. 发明申请

US20060292488A1 Composition for formation of antireflection film, and antireflection film in which the same is used 审中-公开
标题翻译：用于形成防反射膜的组合物和使用其的抗反射膜
公开(公告)号：US20060292488A1
公开(公告)日：2006-12-28
申请号：US11446763
申请日：2006-06-05
申请人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
发明人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
IPC分类号： C08G77/26 , G03C1/00
CPC分类号： C08G77/20 , C08G77/14 , G03F7/0757 , G03F7/091
摘要： A composition for formation of an antireflection film having an excellent etching resistant characteristic and ability to prevent reflection of short-wavelength light (absorption ability of short-wavelength light) as well as excellent time dependent stability, and an antireflection film in which the same is used, are provided. A composition for formation of an antireflection film including a siloxane compound having a light-absorbing group and a crosslinking group, the siloxane compound being blocked with a capping group, is provided. By thus blocking the siloxane compound with a capping group, time dependent stability can be improved without deteriorating etching resistance, and ability to prevent reflection.
摘要翻译：用于形成具有优异的耐蚀刻特性和防止短波长光的反射（短波长光的吸收能力）以及优异的时间依赖稳定性的抗反射膜的组合物和其中相同的抗反射膜使用，提供。提供了一种用于形成包含具有光吸收基团和交联基团的硅氧烷化合物的抗反射膜的组合物，该硅氧烷化合物被封端基封端。通过这样用封端基封端硅氧烷化合物，可以提高时间依赖性的稳定性，而不会降低耐腐蚀性，防止反射的能力。

49. 发明授权

US06649534B2 Methods for processing a coating film and for manufacturing a semiconductor element 有权
标题翻译：用于处理涂膜和制造半导体元件的方法
公开(公告)号：US06649534B2
公开(公告)日：2003-11-18
申请号：US10216997
申请日：2002-08-12
申请人： Yasushi Fujii , Atsushi Matsushita
发明人： Yasushi Fujii , Atsushi Matsushita
IPC分类号： H01L2131
CPC分类号： H01L21/0234 , H01L21/02126 , H01L21/02282 , H01L21/31058 , H01L21/31138 , H01L21/3121 , H01L21/76802
摘要： According to the present invention, there is provided a method for processing a coating film, including the steps of forming a silica group coating film having a low dielectric constant on a substrate, etching the silica group coating film through a resist pattern, and processing the silica group coating film with plasma induced from a substantially inactive gas such as helium gas or the like. In this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant can be maintained.
摘要翻译：根据本发明，提供一种涂膜的处理方法，包括以下步骤：在基材上形成具有低介电常数的二氧化硅基涂膜，通过抗蚀剂图案蚀刻二氧化硅基涂膜，并处理由基本上惰性的气体如氦气等引起的具有等离子体的二氧化硅组涂膜。在该方法中，当作为后续工艺对抗蚀剂图案进行灰化处理时，二氧化硅基涂膜不被损坏，并且可以保持低介电常数。

50. 发明授权

US06509279B2 Methods for processing a coating film and for manufacturing a semiconductor element 失效
公开(公告)号：US06509279B2
公开(公告)日：2003-01-21
申请号：US09912119
申请日：2001-07-24
申请人： Yasushi Fujii , Atsushi Matsushita
发明人： Yasushi Fujii , Atsushi Matsushita
IPC分类号： H01L2131
CPC分类号： H01L21/0234 , H01L21/02126 , H01L21/02282 , H01L21/31058 , H01L21/31138 , H01L21/3121 , H01L21/76802
摘要： According to the present invention, there is provided a method for processing a coating film comprising the steps of forming a silica group coating film having a low dielectric constant on a substrate, conducting an etching process to the silica group coating film through a resist pattern, processing the silica group coating film with plasma induced from inactive gas such as helium gas or the like. In processing according to this method, the silica group coating film is not damaged when an ashing process is conducted to the resist pattern as a subsequent process, and the low dielectric constant of the coating film can be maintained.

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