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41. 发明授权

US08445979B2 Magnetic memory devices including magnetic layers separated by tunnel barriers 有权
公开(公告)号：US08445979B2
公开(公告)日：2013-05-21
申请号：US12862074
申请日：2010-08-24
申请人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
发明人： Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.

42. 发明申请

US20120061775A1 DEVICE FOR USE AS DUAL-SIDED SENSOR PACKAGE 有权
标题翻译：用作双面传感器封装的设备
公开(公告)号：US20120061775A1
公开(公告)日：2012-03-15
申请号：US12879143
申请日：2010-09-10
申请人： Woojin KIM , Aniela Bryzek , John Dancaster , Dong-Suk Kim
发明人： Woojin KIM , Aniela Bryzek , John Dancaster , Dong-Suk Kim
IPC分类号： H01L29/84 , H01L21/50
CPC分类号： B60C23/0408 , G01D11/245 , G01L19/0084 , G01L19/141 , G01L19/147 , H01L2224/48091 , H01L2224/49171 , H01L2924/00014
摘要： A sensor package, and in one embodiment a sensor package for surface mount applications, that comprises a leadframe with an upper and lower surface for receiving a device thereon. Embodiments of the sensor package comprise a first device secured to the upper surface, and a second device secured to the lower surface so as to place connective pads from each of the first device and the second device proximate to one side of the leadframe. The sensor package further comprises a lead that is positioned in the sensor package in a manner that prevents electrical connection with circuitry that is external of the housing. The lead has an end proximate the side of the lead frame where the connective pads are positioned on the upper and lower surfaces. The end configured to receive connections, e.g., wirebonds, from the connective pads in a manner connecting the first device and the second device independent of any external connections of the sensor package.
摘要翻译：传感器封装，并且在一个实施例中用于表面贴装应用的传感器封装，其包括具有用于在其上接收器件的上表面和下表面的引线框架。传感器封装的实施例包括固定到上表面的第一器件和固定到下表面的第二器件，以便将连接焊盘从第一器件和第二器件中的每一个靠近引线框架的一侧放置。传感器封装还包括以防止与壳体外部的电路的电连接的方式定位在传感器封装中的引线。引线具有靠近引线框架侧面的端部，其中连接焊盘位于上表面和下表面上。该端被配置为以连接第一设备和第二设备的方式从连接焊盘接收连接，例如引线键，而与传感器封装的任何外部连接无关。

43. 发明申请

US20120023386A1 Magnetic Memory Devices, Electronic Systems And Memory Cards Including The Same, Methods Of Manufacturing The Same, And Methods Of Controlling A Magnetization Direction Of A Magnetic Pattern 有权
标题翻译：磁存储器件，包括其的电子系统和存储卡，其制造方法以及控制磁性图案的磁化方向的方法
公开(公告)号：US20120023386A1
公开(公告)日：2012-01-26
申请号：US13181957
申请日：2011-07-13
申请人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
发明人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
IPC分类号： G06F11/10 , H01L21/8246 , H01L29/82
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及控制磁性图案的磁化方向的方法。在磁存储器件中，不平行于自由图案的一个表面的原子磁矩在自由图案中增加。因此，可以减小磁存储器件的临界电流密度，使得磁存储器件的功耗被降低或最小化，和/或磁存储器件被改进或优化以达到更高的集成度。

44. 发明授权

US08852960B2 Method of fabricating semiconductor device and apparatus for fabricating the same 有权
标题翻译：制造半导体器件的方法及其制造方法
公开(公告)号：US08852960B2
公开(公告)日：2014-10-07
申请号：US13305377
申请日：2011-11-28
申请人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
发明人： Woojin Kim , Jangeun Lee , Sechung Oh , Junho Jeong , Heeju Shin
IPC分类号： H01L21/00 , H01L27/22 , C23C16/46 , C23C16/40 , H01L43/10 , C23C16/455 , C23C16/34
CPC分类号： C23C16/345 , C23C16/403 , C23C16/45536 , C23C16/46 , G11C11/161 , H01L27/222 , H01L43/10
摘要： Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor.
摘要翻译：提供一种制造半导体器件的方法。制造半导体器件的方法包括在衬底上形成彼此间隔开的多个磁存储器图案，其中每个磁存储器图案包括堆叠在基板上的自由图案，隧道势垒图案和参考图案对磁存储器图案执行磁热处理工艺，以及在磁存储器图案上形成钝化层。磁性热处理工艺和钝化层的形成同时在一个反应器中进行。

45. 发明授权

US08692342B2 Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern 有权
标题翻译：磁记忆装置具有均匀的垂直非磁性富金属各向异性增强图案
公开(公告)号：US08692342B2
公开(公告)日：2014-04-08
申请号：US13181957
申请日：2011-07-13
申请人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
发明人： Sechung Oh , Jangeun Lee , Woojin Kim , Heeju Shin
IPC分类号： H01L29/82 , H01L43/00 , H01L23/552 , H01L29/34 , H01L29/74 , H01L31/111
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
摘要翻译：提供了磁存储器件，电子系统和包括其的存储卡，其制造方法以及控制磁性图案的磁化方向的方法。在磁存储器件中，不平行于自由图案的一个表面的原子磁矩在自由图案中增加。因此，可以减小磁存储器件的临界电流密度，使得磁存储器件的功耗被降低或最小化，和/或磁存储器件被改进或优化以达到更高的集成度。

46. 发明申请

US20100328568A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20100328568A1
公开(公告)日：2010-12-30
申请号：US12621888
申请日：2009-11-19
申请人： Kyuheon LEE , Jongki Ahn , Woojin Kim , Daesung Park
发明人： Kyuheon LEE , Jongki Ahn , Woojin Kim , Daesung Park
IPC分类号： G02F1/1333
CPC分类号： G02F1/133308 , G02F2001/133317 , G02F2001/13332 , G02F2001/133328 , G02F2201/465
摘要： A liquid crystal display is provided to improve workability for fastening and reduce production costs. The liquid crystal display includes: a liquid crystal panel; a film member having a source IC for driving the liquid crystal panel mounted therein; a source PCB electrically connected to the liquid crystal panel through the film member; lamps for generating light; a panel guide having a guide space where the source PCB is positioned provided on an upper outer surface thereof; a bottom cover; and a top case having a first frame member surrounding both of the film member and the source PCB and fixing the liquid crystal panel at a portion of the upper side of the liquid crystal panel and a plurality of frame members physically separated from the first frame member and fixing the liquid crystal panel at a portion of the lower side of the liquid crystal panel.
摘要翻译：提供液晶显示器以提高紧固的可操作性并降低生产成本。液晶显示器包括：液晶面板; 具有用于驱动安装在其中的液晶面板的源极IC的膜构件; 源PCB，其经由所述膜构件电连接到所述液晶面板; 发光灯; 面板引导件，其具有位于其上外表面上的源PCB的引导空间; 底盖; 以及顶壳，其具有围绕所述膜构件和所述源PCB两者的第一框架构件，并且将所述液晶面板固定在所述液晶面板的上侧的一部分，以及与所述第一框架构件物理分离的多个框架构件并将液晶面板固定在液晶面板的下侧的一部分。

47. 发明申请

US20170110301A1 Sputtering Apparatuses and Methods of Manufacturing a Magnetic Memory Device Using the Same 有权
公开(公告)号：US20170110301A1
公开(公告)日：2017-04-20
申请号：US15202597
申请日：2016-07-06
申请人： Joonmyoung LEE , Woojin KIM
发明人： Joonmyoung LEE , Woojin KIM
IPC分类号： H01J37/34 , H01J37/32 , H01L43/12 , H01L43/08 , H01L43/10 , C23C14/34 , H01L27/22
CPC分类号： H01J37/3488 , C23C14/08 , C23C14/3464 , C23C14/505 , H01J37/32715 , H01J37/34 , H01J37/3426 , H01J37/3447 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view.

48. 发明授权

US09570670B2 Magnetic device and method of fabricating the same 有权
标题翻译：磁性装置及其制造方法
公开(公告)号：US09570670B2
公开(公告)日：2017-02-14
申请号：US13763464
申请日：2013-02-08
申请人： ChanJin Park , Woojin Kim , Hyungjoon Kwon , Soonoh Park , Jongchul Park , Sechung Oh
发明人： ChanJin Park , Woojin Kim , Hyungjoon Kwon , Soonoh Park , Jongchul Park , Sechung Oh
IPC分类号： H01L43/02 , H01L43/08 , H01L43/12
CPC分类号： H01L43/02 , G11C11/1659 , H01L43/08 , H01L43/12
摘要： Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure.
摘要翻译：提供一种磁存储器件及其制造方法。该装置可以包括磁性隧道结，其包括下部磁性结构，上部磁性结构和插入其间的隧道屏障。隧道势垒可以具有大于下部磁性结构的宽度的宽度。

49. 发明授权

US09203014B2 Magnetic memory devices having junction magnetic layers and buffer layers and related methods 有权
标题翻译：具有结磁层和缓冲层的磁存储器件及相关方法
公开(公告)号：US09203014B2
公开(公告)日：2015-12-01
申请号：US14155725
申请日：2014-01-15
申请人： Joonmyoung Lee , Yunjae Lee , Woojin Kim
发明人： Joonmyoung Lee , Yunjae Lee , Woojin Kim
IPC分类号： H01L43/08 , H01L43/10 , H01F10/32 , G11C11/16
CPC分类号： H01L43/10 , G11C11/161 , H01F10/3254 , H01L43/08
摘要： A magnetic memory device may include a free magnetic structure, a tunnel barrier layer, and a pinned magnetic structure wherein the tunnel barrier layer is between the free magnetic structure and the pinned magnetic structure. The pinned magnetic structure may include first and second pinned layers and an exchange coupling layer between the first and second pinned layers. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the second pinned layer may include a junction magnetic layer and a buffer layer between the junction magnetic layer and the exchange coupling layer. The buffer layer may include a layer of a material including a non-magnetic metallic element. Related devices, structures, and methods are also discussed.
摘要翻译：磁存储器件可以包括自由磁结构，隧道势垒层和钉扎磁结构，其中隧道势垒层位于自由磁结构和钉扎磁结构之间。被钉扎的磁性结构可以包括第一和第二被钉扎层以及在第一和第二钉扎层之间的交换耦合层。第二被钉扎层可以在第一被钉扎层和隧道势垒层之间，并且第二钉扎层可以在结磁性层和交换耦合层之间包括结磁性层和缓冲层。缓冲层可以包括包括非磁性金属元素的材料层。还讨论了相关设备，结构和方法。

50. 发明申请

US20150035095A1 MAGNETIC MEMORY DEVICES HAVING A PERPENDICULAR MAGNETIC TUNNEL JUNCTION 有权
标题翻译：磁性记忆装置具有一个贯穿磁性的隧道结
公开(公告)号：US20150035095A1
公开(公告)日：2015-02-05
申请号：US14264049
申请日：2014-04-28
申请人： WOOJIN KIM , KI WOONG KIM , WOO CHANG LIM
发明人： WOOJIN KIM , KI WOONG KIM , WOO CHANG LIM
IPC分类号： H01L43/02
CPC分类号： H01L27/222 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.
摘要翻译：磁存储器件可以包括通过隧道势垒彼此分离的自由磁结构和参考磁性结构。自由磁结构可以包括交换耦合层，以及通过交换耦合层彼此分离的第一和第二自由层。第一自由层可以设置在第二自由层和隧道势垒之间。第一自由层的厚度可以大于第一最大各向异性厚度，即第一自由层具有最大垂直各向异性的厚度。第二自由层的厚度可以小于第二最大各向异性厚度，即第二自由层具有最大垂直各向异性的厚度。具有两个具有不同厚度的自由层的磁性隧道结可实现具有增加的MR比和降低的开关电流的磁存储器件。

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