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41. 发明授权

US07605065B2 Schottky barrier tunnel single electron transistor and method of manufacturing the same 有权
标题翻译：肖特基势垒隧道单电子晶体管及其制造方法
公开(公告)号：US07605065B2
公开(公告)日：2009-10-20
申请号：US11839704
申请日：2007-08-16
申请人： Moon Gyu Jang , Yark Yeon Kim , Jae Heon Shin , Seong Jae Lee
发明人： Moon Gyu Jang , Yark Yeon Kim , Jae Heon Shin , Seong Jae Lee
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/872
摘要： Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).
摘要翻译：提供了一种肖特基势垒隧道单电子晶体管及其制造方法，其替代传统的制造方法，而是用硅化物替代源极和漏极作为硅和金属的反应物，从而形成金属和半导体之间形成的肖特基势垒单电子晶体管（SET），其通过注入掺杂剂而包括源极和漏极区域，使得在沟道区域中形成人造量子点。结果，不需要传统的PADOX工艺来形成单电子晶体管（SET）的量子点，隧道势垒的高度和宽度可以通过使用具有各种肖特基结屏障的硅化物材料进行人工调整，而且可以提高单电子晶体管（SET）的电流驱动能力。

42. 发明授权

US07566642B2 Process of manufacturing an N-type Schottky barrier tunnel transistor 有权
标题翻译：制造N型肖特基势垒隧道晶体管的工艺
公开(公告)号：US07566642B2
公开(公告)日：2009-07-28
申请号：US11188076
申请日：2005-07-22
申请人： Yark Yeon Kim , Moon Gyu Jang , Jae Heon Shin , Seong Jae Lee
发明人： Yark Yeon Kim , Moon Gyu Jang , Jae Heon Shin , Seong Jae Lee
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/2252 , H01L21/2254 , H01L21/28518 , H01L21/28537 , H01L29/458 , H01L29/4908 , H01L29/66636 , H01L29/7834 , H01L29/7839
摘要： An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal silicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.
摘要翻译：提供了n型SBTT及其制造方法。 SBTT包括硅层，栅极，具有稀土金属硅化物层和过渡金属硅化物层的双层。硅层具有沟道区。栅极以重叠的方式形成在沟道区上，并且在其相对于硅层的界面上具有栅极介电层。双层形成为具有介于硅层之间的沟道区的源极/漏极。

43. 发明申请

US20130146114A1 THERMOELECTRIC ELEMENT 审中-公开
标题翻译：热电元件
公开(公告)号：US20130146114A1
公开(公告)日：2013-06-13
申请号：US13610981
申请日：2012-09-12
申请人： Moon Gyu JANG
发明人： Moon Gyu JANG
IPC分类号： H01L35/28
CPC分类号： H01L35/32
摘要： Disclosed is a thermoelectric element capable of being easily fabricated by employing a semiconductor CMOS process, and improving the thermoelectric efficiency by reducing thermal conductivity while improving electric conductivity between a heat absorption part and a heat emission unit. The thermoelectric element according to an exemplary embodiment of the present disclosure includes a common electrode configured to absorb heat; a first electrode and a second electrode formed on an identical plane to a plane of the common electrode and configured to emit heat; an N-leg connected between the common electrode and the first electrode and configured to supply electrons; and a P-leg connected between the common electrode and the second electrode and configured to supply holes, in which a barrier material for suppressing thermal conduction between the common electrode and the first and second electrodes is formed in the N-leg and the P-leg.
摘要翻译：公开了一种能够通过采用半导体CMOS工艺容易地制造的热电元件，并且通过降低热导率同时改善吸热部分和发热单元之间的导电性来提高热电效率。根据本公开的示例性实施例的热电元件包括构造成吸收热量的公共电极; 第一电极和第二电极，形成在与公共电极的平面相同的平面上并且被配置为发热; 连接在所述公共电极和所述第一电极之间并被配置为提供电子的N脚; 以及连接在所述公共电极和所述第二电极之间并被配置为提供空穴的P腿，其中在所述N腿和所述P-腿中形成用于抑制所述公共电极与所述第一和第二电极之间的热传导的阻挡材料，腿。

44. 发明申请

US20120160292A1 THERMOELECTRIC DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：热电装置及其制造方法
公开(公告)号：US20120160292A1
公开(公告)日：2012-06-28
申请号：US13323844
申请日：2011-12-13
申请人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
发明人： Moon Gyu JANG , Young Sam Park , Younghoon Hyun , Myungsim Jun , Taehyoung Zyung
IPC分类号： H01L35/14 , H01L35/34 , H01L35/32 , H01L37/00
CPC分类号： H01L35/32 , H01L35/22
摘要： A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire.
摘要翻译：热电装置包括：基板; 第一导电类型的第一纳米线，其形成在基板的一侧上; 与第一纳米线相对的第二导电类型的第二纳米线; 通常连接到第一纳米线的一端和第二纳米线的一端的高温部分; 低温部分分别连接到第一纳米线的另一端和第二纳米线的另一端; 形成在所述第一纳米线和所述第二纳米线上的绝缘层; 形成在第一纳米线上的绝缘层的一部分上的第一金属层，以便控制第一纳米线的电位; 以及形成在第二纳米线上的绝缘层的一部分上的第二金属层，以便控制第二纳米线的电位。

45. 发明申请

US20120152296A1 THERMOELECTRIC DEVICE, THERMOELECTIC DEVICE MODULE, AND METHOD OF FORMING THE THERMOELECTRIC DEVICE 审中-公开
标题翻译：热电装置，热电装置模块及形成热电装置的方法
公开(公告)号：US20120152296A1
公开(公告)日：2012-06-21
申请号：US13408153
申请日：2012-02-29
申请人： Moon-Gyu Jang , Myung-Sim Jun , Tae-Moon Roh , Jong-Dae Kim , Tae-Hyoung Zyung
发明人： Moon-Gyu Jang , Myung-Sim Jun , Tae-Moon Roh , Jong-Dae Kim , Tae-Hyoung Zyung
IPC分类号： H01L35/28 , H01L35/34 , B82Y99/00 , B82Y40/00
CPC分类号： H01L35/32 , H01L35/34
摘要： Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a first conductive type first semiconductor nanowire including at least one first barrier region; a second conductive type second semiconductor nanowire including at least one second barrier region; a first electrode connected to one end of the first semiconductor nanowire; a second electrode connected to one end of the second semiconductor nanowire; and a common electrode connected to the other end of the first semiconductor nanowire and the other end of the second semiconductor nanowire. The first barrier region is greater than the first semiconductor nanowire in thermal conductivity, and the second barrier region is greater than the second semiconductor nanowire in thermal conductivity.
摘要翻译：提供了一种热电装置，热电装置模块和形成热电装置的方法。热电装置包括：第一导电型第一半导体纳米线，其包括至少一个第一阻挡区; 包括至少一个第二阻挡区域的第二导电类型的第二半导体纳米线; 连接到第一半导体纳米线的一端的第一电极; 连接到所述第二半导体纳米线的一端的第二电极; 以及连接到第一半导体纳米线的另一端和第二半导体纳米线的另一端的公共电极。第一阻挡区域的导热率大于第一半导体纳米线，第二阻挡区域的导热率大于第二半导体纳米线。

46. 发明申请

US20120133210A1 HYBRID ENERGY HARVESTER AND PORTABLE DEVICE THE SAME 审中-公开
标题翻译：混合动力收割机和便携式设备也是如此
公开(公告)号：US20120133210A1
公开(公告)日：2012-05-31
申请号：US13242914
申请日：2011-09-23
申请人： Seungeon Moon , Sang Kyun Lee , Moon Gyu Jang , Yil Suk Yang , Jongdae Kim
发明人： Seungeon Moon , Sang Kyun Lee , Moon Gyu Jang , Yil Suk Yang , Jongdae Kim
IPC分类号： H02J1/00 , H01L35/28 , H02N2/18 , H01L35/02
CPC分类号： H02N2/18 , H01L35/00 , H01L41/113 , Y10T307/696
摘要： Disclosed are a hybrid energy harvester and a portable device including the same. The hybrid energy harvester according to an exemplary embodiment of the present disclosure includes: a thermoelectric/piezoelectric element part that includes a thermoelectric element layer generating a voltage by a temperature difference, and a piezoelectric element layer generating a voltage by any one of vibration, pressure and force; an energy source selection part that selects a voltage generated in the thermoelectric element layer or the piezoelectric element layer; and a voltage controlling part that stores the voltage in an energy storage device by controlling the voltage selected in the energy source selection part.
摘要翻译：公开了一种混合式能量收集器和包括其的便携式装置。根据本公开的示例性实施例的混合式能量收集器包括：热电/压电元件部分，其包括通过温差产生电压的热电元件层和通过振动，压力中的任一个产生电压的压电元件层和力量能量源选择部，其选择在所述热电元件层或所述压电元件层中产生的电压; 以及电压控制部，其通过控制在能量源选择部中选择的电压来将电压存储在能量存储装置中。

47. 发明授权

US08163240B2 Detection device and system 有权
标题翻译：检测装置和系统
公开(公告)号：US08163240B2
公开(公告)日：2012-04-24
申请号：US12682545
申请日：2008-06-13
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
IPC分类号： G01N15/06 , G01N33/00 , G01N33/48 , G01N27/00
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

48. 发明申请

US20110272279A1 APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME 审中-公开
标题翻译：用于制造半导体器件的装置和使用该半导体器件制造半导体器件的方法
公开(公告)号：US20110272279A1
公开(公告)日：2011-11-10
申请号：US13184089
申请日：2011-07-15
申请人： Woo-Seok CHEONG , Seong-Jae LEE , Won-Ju Jo , Moon-Gyu JANG
发明人： Woo-Seok CHEONG , Seong-Jae LEE , Won-Ju Jo , Moon-Gyu JANG
IPC分类号： C23C14/34
CPC分类号： H01L21/67207 , H01L29/66848
摘要： In a process for manufacturing a hyperfine semiconductor device, an apparatus for manufacturing a semiconductor device such as a schottky barrier MOSFET and a method for manufacturing the semiconductor device using the same are provided. Two chambers are connected with each other. A cleaning process, a metal layer forming process, and subsequent processes can be performed in situ by using the two chambers, thereby the attachment of the unnecessary impurities and the formation of the oxide can be prevented and the optimization of the process can be accomplished.
摘要翻译：在制造超精细半导体器件的方法中，提供了用于制造诸如肖特基势垒MOSFET的半导体器件的装置以及使用其制造半导体器件的方法。两个腔室相互连接。可以通过使用两个室来原位进行清洁处理，金属层形成工艺和随后的工艺，从而可以防止不必要的杂质的附着和氧化物的形成，并且可以实现工艺的优化。

49. 发明授权

US08022444B2 Biosensor and method of manufacturing the same 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US08022444B2
公开(公告)日：2011-09-20
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L27/085 , H01L27/14 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

50. 发明申请

US20110198498A1 THERMOELECTRIC DEVICE AND METHOD OF FORMING THE SAME, TEMPERATURE SENSING SENSOR, AND HEAT-SOURCE IMAGE SENSOR USING THE SAME 失效
标题翻译：热电装置及其制造方法，温度感测传感器和使用其的热源图像传感器
公开(公告)号：US20110198498A1
公开(公告)日：2011-08-18
申请号：US12987459
申请日：2011-01-10
申请人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
发明人： Young Sam Park , Moon Gyu Jang , Younghoon Hyun , Myungsim Jun , Sang Hoon Cheon , Taehyoung Zyung
IPC分类号： H01L23/34 , H01L21/02 , H01J31/49 , G01K7/04 , B82Y99/00
CPC分类号： B82Y15/00 , H01L29/0665 , H01L35/32 , H01L2924/0002 , H04N5/33 , H01L2924/00
摘要： Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.
摘要翻译：提供了一种热电装置及其形成方法，温度感测传感器和使用该热电装置的热源图像传感器。热电装置包括第一纳米线和第二纳米线，第一硅薄膜，第二硅薄膜和第三硅薄膜。第一纳米线和第二纳米线设置在基底上。第一个纳米线和第二个纳米线彼此分离。第一硅薄膜连接到第一纳米线的一端。第二硅薄膜连接到第二纳米线的一端。第三硅薄膜连接到第一纳米线和第二纳米线的另一端。第一和第二纳米线在平行于衬底的上表面的方向上延伸。

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