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41. 发明授权

US07491565B2 III-nitride light emitting devices fabricated by substrate removal 有权
标题翻译：通过衬底去除制造的III族氮化物发光器件
公开(公告)号：US07491565B2
公开(公告)日：2009-02-17
申请号：US11330209
申请日：2006-01-10
申请人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
发明人： Carrie Carter Coman , Fred A. Kish, Jr. , Michael R Krames , Paul S Martin
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.
摘要翻译：描述了从蓝宝石生长衬底去除发光层所产生的用于制造InAlGaN发光器件的器件和技术。在几个实施例中，描述了用于制造导致改进的性能和/或成本效益的垂直InAlGaN发光二极管结构的技术。此外，采用金属结合，衬底剥离和新颖的RIE器件分离技术来有效地在选择用于其导热性和易于制造的衬底上生产垂直GaN LED。

42. 发明申请

US20080303039A1 Mount for a Semiconductor Light Emitting Device 有权
标题翻译：安装用于半导体发光器件
公开(公告)号：US20080303039A1
公开(公告)日：2008-12-11
申请号：US11760521
申请日：2007-06-08
申请人： M. George Craford , Michael R. Krames
发明人： M. George Craford , Michael R. Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/642 , H01L33/647 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/056 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A mount for a semiconductor device includes a carrier, at least two metal leads disposed on a bottom surface of the carrier, and a cavity extending through a thickness of the carrier to expose a portion of the top surfaces of the metal leads. A semiconductor light emitting device is positioned in the cavity and is electrically and physically connected to the metal leads. The carrier may be, for example, silicon, and the leads may be multilayer structures, for example a thin gold layer connected to a thick copper layer.
摘要翻译：用于半导体器件的安装件包括载体，设置在载体的底表面上的至少两个金属引线和延伸穿过载体厚度的空腔以暴露金属引线的顶表面的一部分。半导体发光器件位于空腔中，并且与金属引线电连接并物理连接。载体可以是例如硅，并且引线可以是多层结构，例如连接到厚铜层的薄金层。

43. 发明申请

US20080265263A1 Polarized Semiconductor Light Emitting Device 审中-公开
标题翻译：极化半导体发光器件
公开(公告)号：US20080265263A1
公开(公告)日：2008-10-30
申请号：US12171718
申请日：2008-07-11
申请人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
发明人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/00
CPC分类号： H04N9/3152 , H01L33/0004 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/60
摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.
摘要翻译：发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。波长转换材料例如设置在出射表面上。即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。如果需要，可以在分束器和微显示器之间设置集中器元件。

44. 发明授权

US07408201B2 Polarized semiconductor light emitting device 失效
标题翻译：极化半导体发光器件
公开(公告)号：US07408201B2
公开(公告)日：2008-08-05
申请号：US10804314
申请日：2004-03-19
申请人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
发明人： Matthijs H. Keuper , Michael R. Krames , Gerd O. Mueller
IPC分类号： G02F1/133
CPC分类号： H04N9/3152 , H01L33/0004 , H01L33/16 , H01L33/18 , H01L33/32 , H01L33/44 , H01L33/507 , H01L33/60
摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.
摘要翻译：发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。波长转换材料例如设置在出射表面上。即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。如果需要，可以在分束器和微显示器之间设置集中器元件。

45. 发明授权

US07361938B2 Luminescent ceramic for a light emitting device 有权
标题翻译：用于发光器件的发光陶瓷
公开(公告)号：US07361938B2
公开(公告)日：2008-04-22
申请号：US10861172
申请日：2004-06-03
申请人： Gerd O. Mueller , Regina B. Mueller-Mach , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Arnold Kop
发明人： Gerd O. Mueller , Regina B. Mueller-Mach , Michael R. Krames , Peter J. Schmidt , Hans-Helmut Bechtel , Joerg Meyer , Jan de Graaf , Theo Arnold Kop
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/502 , C04B35/44 , C04B35/547 , C04B35/584 , C04B35/597 , C04B35/6268 , C04B35/64 , C04B35/645 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3286 , C04B2235/6027 , C04B2235/662 , C09K11/7774 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/50 , H01L33/501 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L33/641 , H01L33/644 , H01L2924/0002 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0075 , H01L2924/00
摘要： A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
摘要翻译：包括设置在n型区域和p型区域之间的发光层的半导体发光器件与设置在由发光层发射的光的路径中的陶瓷层组合。陶瓷层由磷光体等波长转换材料构成或包含波长转换材料。根据本发明的实施例的发光陶瓷层可以比现有技术的荧光体层更坚固并且对温度不太敏感。此外，发光陶瓷可能表现出更少的散射，因此可以提高现有技术荧光体层的转换效率。

46. 发明授权

US07064355B2 Light emitting diodes with improved light extraction efficiency 有权
公开(公告)号：US07064355B2
公开(公告)日：2006-06-20
申请号：US09880204
申请日：2001-06-12
申请人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
发明人： Michael D. Camras , Michael R. Krames , Wayne L. Snyder , Frank M. Steranka , Robert C. Taber , John J. Uebbing , Douglas W. Pocius , Troy A. Trottier , Christopher H. Lowery , Gerd O. Mueller , Regina B. Mueller-Mach , Gloria E. Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/405 , H01L33/505 , H01L33/60
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent optical element (e.g., a lens or an optical concentrator) to a light emitting device comprising an active region includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the light emitting device together. A block of optical element material may be bonded to the light emitting device and then shaped into an optical element. Bonding a high refractive index optical element to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.

47. 发明授权

US06989555B2 Strain-controlled III-nitride light emitting device 有权
标题翻译：应变控制III族氮化物发光器件
公开(公告)号：US06989555B2
公开(公告)日：2006-01-24
申请号：US10830202
申请日：2004-04-21
申请人： Werner K. Goetz , Michael R. Krames , Anneli Munkholm
发明人： Werner K. Goetz , Michael R. Krames , Anneli Munkholm
IPC分类号： H01L29/24
CPC分类号： H01L33/32 , H01L33/08 , H01L33/12
摘要： In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.
摘要翻译：在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。例如，该比率可以在约1至约1.01之间。

48. 发明授权

US06646292B2 Semiconductor light emitting device and method 失效
标题翻译：半导体发光器件及方法
公开(公告)号：US06646292B2
公开(公告)日：2003-11-11
申请号：US09803002
申请日：2001-03-09
申请人： Daniel A. Steigerwald , Michael R. Krames
发明人： Daniel A. Steigerwald , Michael R. Krames
IPC分类号： H01L3300
CPC分类号： H01L33/22 , H01L27/156 , H01L33/02 , H01L33/025 , H01L33/38 , H01L33/40 , H01L33/405 , H01L33/64 , H01L33/641
摘要： A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient &agr;, at the emission wavelength of the active region, of &agr;>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, &agr;, of the substrate material is &agr;
摘要翻译：发光器件包括：形成在衬底一侧的半导体结构，所述半导体结构具有多个半导体层和所述层内的有源区; 以及分别与所述结构的不同半导体层接触的第一和第二导电电极; 该衬底包括在有源区的发射波长处具有α> 3cm -1的折射率n> 2.0和光吸收系数α的材料。在优选实施例中，基底材料的折射率n> 2.3，并且基底材料的光吸收系数α为α<1cm -1。

49. 发明授权

US06525335B1 Light emitting semiconductor devices including wafer bonded heterostructures 有权
标题翻译：包括晶圆键合异质结构的发光半导体器件
公开(公告)号：US06525335B1
公开(公告)日：2003-02-25
申请号：US09707495
申请日：2000-11-06
申请人： Michael R. Krames , Christopher P. Kocot
发明人： Michael R. Krames , Christopher P. Kocot
IPC分类号： H01L2906
CPC分类号： H01L33/30 , H01L33/0079 , H01L33/32
摘要： A method of forming a light emitting semiconductor device includes fabricating a stack of layers comprising an active region, and wafer bonding a structure including a carrier confinement semiconductor layer to the stack. A light emitting semiconductor device includes a first carrier confinement layer of a first semiconductor having a first conductivity type, an active region, and a wafer bonded interface disposed between the active region and the first carrier confinement layer. The light emitting semiconductor device may further include a second carrier confinement layer of a second semiconductor having a second conductivity type, with the active region disposed between the first carrier confinement layer and the second carrier confinement layer. The wafer bonded confinement layer provides enhanced carrier confinement and device performance.
摘要翻译：一种形成发光半导体器件的方法包括制造包括有源区的层叠层，并将包括载流子限制半导体层的结构晶片粘合到堆叠。发光半导体器件包括具有第一导电类型的第一半导体的第一载流子限制层，有源区和设置在有源区和第一载流子限制层之间的晶片接合界面。发光半导体器件还可以包括具有第二导电类型的第二半导体的第二载流子限制层，其中有源区域设置在第一载流子限制层和第二载流子限制层之间。晶片接合限制层提供增强的载体限制和装置性能。

50. 发明授权

US06504171B1 Chirped multi-well active region LED 失效
标题翻译：啁啾多功能区LED
公开(公告)号：US06504171B1
公开(公告)日：2003-01-07
申请号：US09490777
申请日：2000-01-24
申请人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
发明人： Patrick N. Grillot , Christopher P. Kocot , Michael R. Krames , Eugene I. Chen , Stephen A. Stockman , Ying-Lan Chang , Robert C. Taber
IPC分类号： H01L2906
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region by altering the electron and hole distribution profiles within the light emitting active layers of the active region (i.e., across the active region). The chirped multi-well active region produces a higher and more uniform distribution of electrons and holes throughout the active region of the device by substantially offsetting carrier diffusion effects caused by differences in electron and hole mobility by using complementary differences in layer thickness and/or layer composition within the active region. Thus, the chirped design of the multi-well active region increases the probability of radiative recombination of electrons and holes within the light emitting active layers of the active region, which results in an increased light output of the device. The multi-well active region of the device may be chirped with respect to light emitting active layers and/or barrier layers of the active region. The light emitting device may be a III-V material LED, a II-VI material LED, a polymer or organic LED, a laser diode or an optical amplifier.
摘要翻译：发光器件和增加器件的光输出的方法利用啁啾多阱有源区，通过改变电子和空穴来增加有源区的发光有源层内的电子和空穴的辐射复合的概率在有源区域的发光有源层（即，跨过有源区域）的分布曲线。啁啾多孔有源区通过使用层厚度和/或层中的互补差异基本抵消由电子和空穴迁移率的差异引起的载流子扩散效应，从而在器件的整个有源区域中产生更高且更均匀的电子和空穴分布活性区内的组成。因此，多孔有源区的啁啾设计增加了有源区的发光有源层内的电子和空穴的辐射复合的概率，这导致器件的光输出增加。器件的多阱有源区可以相对于有源区的发光有源层和/或势垒层被啁啾。发光器件可以是III-V材料LED，II-VI材料LED，聚合物或有机LED，激光二极管或光放大器。

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