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41. 发明授权

US07824939B2 Method for manufacturing display device comprising separated and electrically connected source wiring layers 有权
标题翻译：一种用于制造显示装置的方法，包括分离且电连接的源极布线层
公开(公告)号：US07824939B2
公开(公告)日：2010-11-02
申请号：US12254589
申请日：2008-10-20
申请人： Kunio Hosoya , Saishi Fujikawa , Yoko Chiba
发明人： Kunio Hosoya , Saishi Fujikawa , Yoko Chiba
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F2001/136236 , H01L27/1214
摘要： Etching is performed using mask layers formed by a multi-tone mask which is a light-exposure mask through which light is transmitted to have a plurality of intensity, in a method for manufacturing a display device including an inverted staggered thin film transistor with a channel-etched structure. Further, a gate wiring layer and a source wiring layer are formed over a substrate in the same step, and the source wiring layer is separated (disconnected) at an intersection of the gate wiring layer and the source wiring layer. The separated source wiring layers are connected to each other electrically through an opening (a contact hole) via a conductive layer formed over a gate insulating layer in the same step as formation of source and drain electrode layers.
摘要翻译：在用包括具有通道的反交错薄膜晶体管的显示装置的制造方法中，使用由多色调掩模形成的掩模层进行蚀刻，所述掩模层是作为透射光以具有多个强度的曝光掩模的多色掩模 - 结构。此外，在同一步骤中，在衬底上形成栅极布线层和源极布线层，并且在栅极布线层和源极布线层的交叉点处分离（断开）源极布线层。分离的源极布线层在与源极和漏极电极层的形成相同的步骤中通过形成在栅极绝缘层上的导电层通过开口（接触孔）彼此电连接。

42. 发明授权

US07786482B2 Diode and display device including diode 有权
标题翻译：二极管和显示器件包括二极管
公开(公告)号：US07786482B2
公开(公告)日：2010-08-31
申请号：US12336614
申请日：2008-12-17
申请人： Shunpei Yamazaki , Kunio Hosoya , Yasutaka Suzuki , Saishi Fujikawa
发明人： Shunpei Yamazaki , Kunio Hosoya , Yasutaka Suzuki , Saishi Fujikawa
IPC分类号： H01L29/04
CPC分类号： H01L29/66765 , H01L27/1222 , H01L27/124 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： A thin film transistor which includes a microcrystalline semiconductor film over a gate electrode with a gate insulating film interposed therebetween to be in an inner region in which end portions of microcrystalline semiconductor film are in an inside of end portions of the gate electrode, an amorphous semiconductor film which covers top and side surfaces of the microcrystalline semiconductor film, and an impurity semiconductor film to which an impurity element imparting one conductivity is added, and which forms a source region and a drain region, wherein the microcrystalline semiconductor film includes an impurity element serving as a donor is provided to reduce off current of a thin film transistor, to reduce reverse bias current of a diode, and to improve an image quality of a display device using a thin film transistor.
摘要翻译：一种薄膜晶体管，其在栅极电极上方具有栅极绝缘膜，该微晶半导体膜位于其内部区域，其中微晶半导体膜的端部位于栅电极的端部的内部，非晶半导体覆盖微晶半导体膜的顶表面和侧表面的膜，以及添加了赋予一种导电性的杂质元素的杂质半导体膜，并且形成源区和漏区，其中微晶半导体膜包括供给的杂质元素为了降低薄膜晶体管的电流而减小二极管的反向偏置电流，并且提高使用薄膜晶体管的显示装置的图像质量，作为供体被提供。

43. 发明授权

US07615495B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US07615495B2
公开(公告)日：2009-11-10
申请号：US11591556
申请日：2006-11-02
申请人： Saishi Fujikawa , Kunio Hosoya
发明人： Saishi Fujikawa , Kunio Hosoya
IPC分类号： H01L21/302
CPC分类号： H01L51/055 , H01L27/124 , H01L27/1288 , H01L27/3279 , H01L29/4908 , H01L51/0023 , H01L51/56
摘要： A plurality of wires and electrodes are formed by forming a first conductive film, selectively forming a resist over the first conductive film, forming a second conductive film over the first conductive film and the resist, removing the second conductive film formed over the resist by removing the resist, forming a third conductive film so as to cover the second conductive film formed over the first conductive film, and selectively etching the first conductive film and the third conductive film. Thus, wires using a low resistance material can be formed in a large-sized panel, and thus, a problem of signal delay can be solved.
摘要翻译：通过形成第一导电膜，在第一导电膜上选择性地形成抗蚀剂，在第一导电膜和抗蚀剂上形成第二导电膜，形成多个导线和电极，通过除去形成在抗蚀剂上的第二导电膜去除形成第三导电膜以覆盖形成在第一导电膜上的第二导电膜，并选择性地蚀刻第一导电膜和第三导电膜。因此，可以在大尺寸面板中形成使用低电阻材料的导线，从而可以解决信号延迟的问题。

44. 发明申请

US20090206342A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20090206342A1
公开(公告)日：2009-08-20
申请号：US12366067
申请日：2009-02-05
申请人： Kunio HOSOYA , Saishi FUJIKAWA , Yukie SUZUKI
发明人： Kunio HOSOYA , Saishi FUJIKAWA , Yukie SUZUKI
IPC分类号： H01L29/786
CPC分类号： H01L27/0296 , H01L27/124 , H01L27/1248
摘要： An object is to reduce an occupied area of a protection circuit. Another object is to increase the reliability of a display device including the protection circuit. The protection circuit includes a first wiring over a substrate, an insulating film over the first wiring, and a second wiring over the insulating film.
摘要翻译：目的是减少保护电路的占用面积。另一个目的是提高包括保护电路的显示装置的可靠性。保护电路包括在基板上的第一布线，第一布线上的绝缘膜和绝缘膜上的第二布线。

45. 发明申请

US20090146150A1 Display Device and Method for Manufacturing the Same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090146150A1
公开(公告)日：2009-06-11
申请号：US12327107
申请日：2008-12-03
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/1255 , H01L27/1288 , H01L27/13
摘要： A display device having the high aperture ratio and a storage capacitor with high capacitance is to be obtained. The present invention relates to a display device and a manufacturing method thereof. The display device includes a thin film transistor which includes a gate electrode, a gate insulating film, a first semiconductor layer, a channel protective film, a second semiconductor having conductivity which is divided into a source region and a drain region, and a source electrode and a drain electrode; a third insulating layer formed over the second conductive film; a pixel electrode formed over the third insulating layer, which is connected to one of the source electrode and the drain electrode; and a storage capacitor formed in a region where a capacitor wiring over the first insulating layer and the pixel electrode are overlapped with the third insulating layer over the capacitor wiring interposed therebetween.
摘要翻译：可以获得具有高开口率的显示装置和具有高电容的存储电容器。显示装置及其制造方法技术领域本发明涉及显示装置及其制造方法。显示装置包括薄膜晶体管，其包括栅极电极，栅极绝缘膜，第一半导体层，沟道保护膜，具有分为源极区域和漏极区域的导电性的第二半导体以及源极电极和漏电极; 形成在所述第二导电膜上的第三绝缘层; 形成在所述第三绝缘层上的像素电极，所述像素电极连接到所述源电极和所述漏极之一; 以及形成在第一绝缘层和像素电极上的电容布线与介于其间的电容器布线上的第三绝缘层重叠的区域的存储电容器。

46. 发明申请

US20070158804A1 Semiconductor device, manufacturing method of semiconductor device, and RFID tag 审中-公开
标题翻译：半导体器件，半导体器件的制造方法和RFID标签
公开(公告)号：US20070158804A1
公开(公告)日：2007-07-12
申请号：US11650731
申请日：2007-01-08
申请人： Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
发明人： Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
IPC分类号： H01L23/06
CPC分类号： H01L25/50 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/83 , H01L24/95 , H01L25/18 , H01L2223/6677 , H01L2224/24011 , H01L2224/2402 , H01L2224/24137 , H01L2224/24227 , H01L2224/2929 , H01L2224/29344 , H01L2224/29355 , H01L2224/76155 , H01L2224/82102 , H01L2224/83851 , H01L2224/95085 , H01L2224/95122 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/10329 , H01L2924/12032 , H01L2924/12043 , H01L2924/12044 , H01L2924/14 , H01L2924/15153 , H01L2924/15155 , H01L2924/15156 , H01L2924/15165 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3011 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof. A structure, which has a base including a plurality of depressions having different shapes or sizes, and a plurality of IC chips which are disposed in the depressions and which fit the depressions, is formed. A semiconductor device which selectively includes a function in accordance with an application, by using the base including the plurality of depressions and the IC chips which fit the depressions, can be manufactured at low cost.
摘要翻译：本发明提供一种以低成本形成并且具有很大通用性的半导体器件及其制造方法，以及具有提高的产率的半导体器件及其制造方法。形成具有包括具有不同形状或尺寸的多个凹部的基部和设置在凹部中并且与凹陷配合的多个IC芯片的结构。可以以低成本制造选择性地包括根据应用的功能的半导体器件，通过使用包括多个凹陷的基座和与凹陷配合的IC芯片。

47. 发明申请

US20070109470A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20070109470A1
公开(公告)日：2007-05-17
申请号：US11598322
申请日：2006-11-13
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： G02F1/1333
CPC分类号： G02F1/1333 , G02F1/1362 , G02F2001/133354
摘要： It is an object of the present invention to provide a liquid crystal display device and the like with high visibility by forming a marker for alignment without increasing an additional step, thereby enabling alignment with high accuracy and reduction in time required for an inspection process in addition to suppressing reduction in yield. A pattern formed over an active matrix substrate which is one of a pair of substrates arranged to be opposed to each other and has a pixel portion is formed as a first marker for alignment, and an opening portion of a light-shielding film formed over an opposite substrate which is the other one of the pair of substrates is formed as a second marker for the alignment. It is to be noted that, by conducting alignment using these markers, alignment of the active matrix substrate and the opposite substrate with high accuracy can be conducted.
摘要翻译：本发明的目的是通过在不增加附加步骤的情况下形成用于对准的标记物来提供具有高可视性的液晶显示装置等，从而能够高精度地对准，另外还能够缩短检查过程所需的时间以抑制产量的降低。形成在作为彼此相对并具有像素部分的一对基板之一的有源矩阵基板上形成的图案被形成为用于对准的第一标记，并且形成在遮光膜上的开口部分作为一对基板中的另一个的相对基板形成为用于对准的第二标记。要注意，通过使用这些标记进行对准，可以进行有源矩阵基板和相对基板的高精度对准。

48. 发明申请

US20120299027A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120299027A1
公开(公告)日：2012-11-29
申请号：US13567215
申请日：2012-08-06
申请人： Kunio HOSOYA , Saishi FUJIKAWA , Takahiro KASAHARA
发明人： Kunio HOSOYA , Saishi FUJIKAWA , Takahiro KASAHARA
IPC分类号： H01L33/62
CPC分类号： H01L21/84 , G02F2202/105 , H01L27/3262 , H01L27/3293 , H01L29/66772 , H01L51/52
摘要： To achieve enlargement and high definition of a display portion, a single crystal semiconductor film is used as a transistor in a pixel, and the following steps are included: bonding a plurality of single crystal semiconductor substrates to a base substrate; separating part of the plurality of single crystal semiconductor substrates to form a plurality of regions each comprising a single crystal semiconductor film over the base substrate; forming a plurality of transistors each comprising the single crystal semiconductor film as a channel formation region; and forming a plurality of pixel electrodes over the region provided with the single crystal semiconductor film and a region not provided with the single crystal semiconductor film. Some of the transistors electrically connecting to the pixel electrodes formed over the region not provided with the single crystal semiconductor film are formed in the region provided with the single crystal semiconductor film.
摘要翻译：为了实现显示部分的放大和高清晰度，在像素中使用单晶半导体膜作为晶体管，并且包括以下步骤：将多个单晶半导体衬底接合到基底衬底; 分离所述多个单晶半导体衬底的一部分以在所述基底衬底上形成各自包括单晶半导体膜的多个区域; 形成各自包含所述单晶半导体膜作为沟道形成区域的多个晶体管; 以及在设置有单晶半导体膜的区域和未设置单晶半导体膜的区域上形成多个像素电极。电连接到形成在未设置单晶半导体膜的区域上的像素电极的一些晶体管形成在设置有单晶半导体膜的区域中。

49. 发明授权

US08278713B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08278713B2
公开(公告)日：2012-10-02
申请号：US12408875
申请日：2009-03-23
申请人： Kunio Hosoya , Saishi Fujikawa , Takahiro Kasahara
发明人： Kunio Hosoya , Saishi Fujikawa , Takahiro Kasahara
IPC分类号： H01L27/12
CPC分类号： H01L21/84 , G02F2202/105 , H01L27/3262 , H01L27/3293 , H01L29/66772 , H01L51/52
摘要： To achieve enlargement and high definition of a display portion, a single crystal semiconductor film is used as a transistor in a pixel, and the following steps are included: bonding a plurality of single crystal semiconductor substrates to a base substrate; separating part of the plurality of single crystal semiconductor substrates to form a plurality of regions each comprising a single crystal semiconductor film over the base substrate; forming a plurality of transistors each comprising the single crystal semiconductor film as a channel formation region; and forming a plurality of pixel electrodes over the region provided with the single crystal semiconductor film and a region not provided with the single crystal semiconductor film. Some of the transistors electrically connecting to the pixel electrodes formed over the region not provided with the single crystal semiconductor film are formed in the region provided with the single crystal semiconductor film.
摘要翻译：为了实现显示部分的放大和高清晰度，在像素中使用单晶半导体膜作为晶体管，并且包括以下步骤：将多个单晶半导体衬底接合到基底衬底; 分离所述多个单晶半导体衬底的一部分以在所述基底衬底上形成各自包括单晶半导体膜的多个区域; 形成各自包含所述单晶半导体膜作为沟道形成区域的多个晶体管; 以及在设置有单晶半导体膜的区域和未设置单晶半导体膜的区域上形成多个像素电极。电连接到形成在未设置单晶半导体膜的区域上的像素电极的一些晶体管形成在设置有单晶半导体膜的区域中。

50. 发明授权

US08039840B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08039840B2
公开(公告)日：2011-10-18
申请号：US12327107
申请日：2008-12-03
申请人： Kunio Hosoya
发明人： Kunio Hosoya
IPC分类号： H01L33/00
CPC分类号： G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/1255 , H01L27/1288 , H01L27/13
摘要： A display device having the high aperture ratio and a storage capacitor with high capacitance is to be obtained. The present invention relates to a display device and a manufacturing method thereof. The display device includes a thin film transistor which includes a gate electrode, a gate insulating film, a first semiconductor layer, a channel protective film, a second semiconductor having conductivity which is divided into a source region and a drain region, and a source electrode and a drain electrode; a third insulating layer formed over the second conductive film; a pixel electrode formed over the third insulating layer, which is connected to one of the source electrode and the drain electrode; and a storage capacitor formed in a region where a capacitor wiring over the first insulating layer and the pixel electrode are overlapped with the third insulating layer over the capacitor wiring interposed therebetween.
摘要翻译：可以获得具有高开口率的显示装置和具有高电容的存储电容器。显示装置及其制造方法技术领域本发明涉及显示装置及其制造方法。显示装置包括薄膜晶体管，其包括栅极电极，栅极绝缘膜，第一半导体层，沟道保护膜，具有分为源极区域和漏极区域的导电性的第二半导体以及源极电极和漏电极; 形成在所述第二导电膜上的第三绝缘层; 形成在所述第三绝缘层上的像素电极，所述像素电极连接到所述源电极和所述漏极之一; 以及形成在第一绝缘层和像素电极上的电容布线与介于其间的电容器布线上的第三绝缘层重叠的区域的存储电容器。

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