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    • 46. 发明申请
    • COOLANT COMPOSITION FOR FUEL CELL
    • 燃料电池组合物
    • US20130092870A1
    • 2013-04-18
    • US13806632
    • 2011-06-08
    • Young Joo HaChang Yeol JoHong Ki Lee
    • Young Joo HaChang Yeol JoHong Ki Lee
    • C09K5/00
    • C09K5/00C09K5/10C09K5/20H01M8/04029
    • A coolant composition for a fuel cell, including (a) an alkylene glycol, (b) deionized water, and (c) a compound containing a trimethylsilyl group. The compound containing a trimethylsilyl group of the composition of the present invention prevents the oxidation of the alkylene glycol, and thus the generation of an acid is 700 ppm or less. Additionally, the compound prevent the oxidation of the alkylene glycol, thereby inhibiting the generation of an ionic material, and thus the rate of change of electrical conductivity (conductivity after oxidation/initial conductivity) can be maintained to be 40 times or less. Therefore, the coolant composition for a fuel cell of the present invention can be used as a coolant for a cooling system of a fuel cell driving device with an electrical conductivity of 40 μs/cm or less even without being frozen in the winter.
    • 一种用于燃料电池的冷却剂组合物,包括(a)亚烷基二醇,(b)去离子水,和(c)含有三甲基甲硅烷基的化合物。 含有本发明组合物的三甲基甲硅烷基的化合物防止亚烷基二醇的氧化,因此酸的产生为700ppm以下。 此外,该化合物防止亚烷基二醇的氧化,从而抑制离子材料的产生,因此导电率(氧化/初始电导率之后的导电率)的变化率可以保持在40倍以下。 因此,本发明的燃料电池用冷却剂组合物,即使不在冬季冻结,也可以用作电导率为40mass / cm以下的燃料电池驱动装置的冷却系统的冷却剂。
    • 47. 发明授权
    • Semiconductor memory device and method of precharging the same with a first and second precharge voltage simultaneously applied to a bit line
    • 半导体存储器件及其对第一和第二预充电电压进行预充电同时施加到位线的方法
    • US08351274B2
    • 2013-01-08
    • US12981927
    • 2010-12-30
    • Sung Joo HaYoung Soo Park
    • Sung Joo HaYoung Soo Park
    • G11C16/24
    • G11C16/06G11C16/26G11C16/32
    • A semiconductor memory device includes a memory string coupled between a common source line and a bit line, a page buffer configured to supply a first precharge voltage to the bit line and to latch data corresponding to a threshold voltage level of a memory cell of the memory string, wherein the data is detected according to a shift in a voltage of the bit line, in a precharge operation, a precharge circuit configured to supply a second precharge voltage to the common source line in the precharge operation, and a voltage supply circuit configured to generate operating voltages for turning on the memory string in the precharge operation. While the first precharge voltage is supplied from the page buffer to the bit line, the second precharge voltage is supplied to the bit line through the memory string.
    • 半导体存储器件包括耦合在公共源极线和位线之间的存储器串,被配置为向位线提供第一预充电电压并锁存对应于存储器的存储器单元的阈值电压电平的数据的页缓冲器 串,其中在预充电操作中根据位线的电压的偏移检测数据;预充电电路,被配置为在预充电操作中向公共源极线提供第二预充电电压;以及电压供给电路, 以在预充电操作中产生用于接通存储器串的工作电压。 当第一预充电电压从页缓冲器提供到位线时,第二预充电电压通过存储器串提供给位线。