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41. 发明申请

US20140007724A1 GEAR WHEEL AND METHOD FOR MANUFACTURING GEAR WHEEL 有权
标题翻译：齿轮和制造齿轮的方法
公开(公告)号：US20140007724A1
公开(公告)日：2014-01-09
申请号：US14000235
申请日：2012-01-31
申请人： Hyung-Jun Kim
发明人： Hyung-Jun Kim
IPC分类号： F16H55/17
CPC分类号： F16H55/17 , B23P15/14 , B29C33/0066 , B29C45/0046 , B29C45/14 , B29C45/14467 , B29C45/14491 , B29C45/1459 , B29C45/1671 , B29C45/2708 , B29C70/84 , B29D15/00 , B29L2015/003 , F16H55/06 , F16H2055/065 , Y10T74/1987
摘要： Provided is a method for manufacturing a gear wheel, the method including: preparing an insertion unit formed of a steel material having a hollow pipe shape; injection-molding an outer side unit including teeth on an outer circumference; and molding a connection unit having a wheel shape by injecting resin into at least three points between the insertion unit and the outer side unit so as to connect the insertion unit and the outer side unit after arranging the insertion unit on the inner center of the outer side unit. According to the method, removing of an unnecessarily injected portion may be omitted since the resin is injected between the insertion unit and the outer side unit while injection-molding the connection unit. Also, productivity is increased by decreasing a number of defective products generated due to cracks.
摘要翻译：提供一种制造齿轮的方法，该方法包括：准备由具有中空管形状的钢材形成的插入单元; 在外圆周上注塑包含齿的外侧单元; 以及通过将树脂注入到所述插入单元和所述外侧单元之间的至少三个点中来成型具有车轮形状的连接单元，以在将所述插入单元布置在所述外部的内部中心之后连接所述插入单元和所述外侧单元侧单位根据该方法，由于在注射成型连接单元的同时，在插入单元和外侧单元之间注入树脂，所以可以省略去除不必要的注入部分。此外，通过减少由于裂纹而产生的缺陷产物的数量增加了生产率。

42. 发明授权

US08528416B2 Apparatus for testing tensile strength under high temperature condition and unit for measuring elongation provided in the same 失效
标题翻译：用于在高温条件下测试拉伸强度的装置和用于测量在其中提供的伸长率的单元
公开(公告)号：US08528416B2
公开(公告)日：2013-09-10
申请号：US12947173
申请日：2010-11-16
申请人： Bong Jae Lee , Yong Ho Yoo , Heung Youl Kim , Hyung Jun Kim , Kyung Hoon Park
发明人： Bong Jae Lee , Yong Ho Yoo , Heung Youl Kim , Hyung Jun Kim , Kyung Hoon Park
IPC分类号： G01N3/08
CPC分类号： G01N3/18 , G01N3/60 , G01N2203/0017
摘要： Provided are an apparatus for testing a tensile strength under a high temperature condition and a unit for measuring elongation provided in the same. The apparatus for testing a tensile strength under a high temperature condition includes a base frame part, a test sample loader and a cylinder part connected to the base frame part and applying a tensile force to a test sample, and a heater for forming a high temperature condition to the test sample. The unit for measuring elongation includes a movable frame, a vertical bar, and a measurement head part connected to the vertical bar to measure elongation of the test sample and blocking heat from the heater. Therefore, since a tensile strength and elongation of the test sample can be measured under a high temperature condition, it is possible to recognize deformation characteristics of a material due to a fire and prevent deformation of or damage to the elongation measurement unit even under the high temperature condition, improving durability and reliability of the apparatus.
摘要翻译：提供了一种用于在高温条件下测试拉伸强度的装置和用于测量在其中提供的伸长率的单元。用于在高温条件下测试拉伸强度的装置包括底架部件，试样装载器和连接到基架部件的圆筒部件并向试样施加张力，以及用于形成高温的加热器测试样品的条件。用于测量伸长率的单元包括可移动框架，垂直杆和连接到垂直杆的测量头部分，以测量测试样品的伸长率并阻止来自加热器的热量。因此，由于可以在高温条件下测定试样的拉伸强度和伸长率，所以能够识别由于火灾引起的材料的变形特性，即使在高温下也能够防止伸长率测定单元的变形或损坏温度条件，提高设备的耐久性和可靠性。

43. 发明授权

US08524549B2 Method of fabricating thin-film transistor substrate 有权
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US08524549B2
公开(公告)日：2013-09-03
申请号：US13191833
申请日：2011-07-27
申请人： Hyung-Jun Kim , Chang-Oh Jeong , Il-Yong Yoon
发明人： Hyung-Jun Kim , Chang-Oh Jeong , Il-Yong Yoon
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , H01L21/02675 , H01L21/02678 , H01L27/1229 , H01L27/1274 , H01L29/66765 , H01L29/78696
摘要： A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.
摘要翻译：制造薄膜晶体管（TFT）基板的方法包括在基板上形成栅电极; 在栅电极上形成绝缘膜; 在所述绝缘膜上形成非晶半导体图案; 以及形成与所述非晶半导体图案上的漏电极分离的源电极; 在所述非晶半导体图案，所述源电极和所述漏电极上形成包括突起的聚光层; 以及通过向所述聚光层的所述突起照射光而使所述非晶半导体图案的至少一部分结晶。

44. 发明申请

US20120147312A1 DISPLAY DEVICE INCLUDING WIRINGS OF DIFFERENT THICKNESSES AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：包括不同厚度的布线的显示装置及其制造方法
公开(公告)号：US20120147312A1
公开(公告)日：2012-06-14
申请号：US13287512
申请日：2011-11-02
申请人： Hyung-Jun KIM , Chang-Oh JEONG
发明人： Hyung-Jun KIM , Chang-Oh JEONG
IPC分类号： G02F1/1343 , H01L33/08
CPC分类号： G02F1/136286 , G02F2001/133388
摘要： Provided are a display device and a method of manufacturing the same. The display device includes: a substrate divided into a display area and a peripheral area; a first metal wiring formed on the display area of the substrate; and a second metal wiring formed on the peripheral area of the substrate and including a gate driver. The first metal wiring is thicker than the second metal wiring.
摘要翻译：提供一种显示装置及其制造方法。该显示装置包括：分为显示区域和周边区域的基板; 形成在所述基板的显示区域上的第一金属布线; 以及形成在所述基板的周边区域上并包括栅极驱动器的第二金属布线。第一金属布线比第二金属布线厚。

45. 发明申请

US20120126233A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20120126233A1
公开(公告)日：2012-05-24
申请号：US13078790
申请日：2011-04-01
申请人： Chong Sup CHANG , Yoon Ho KHANG , Hyung Jun KIM , Se Hwan YU , Sang Ho PARK , Su-Hyoung KANG , Myoung Geun CHA , Young Ki SHIN , Ji Seon LEE
发明人： Chong Sup CHANG , Yoon Ho KHANG , Hyung Jun KIM , Se Hwan YU , Sang Ho PARK , Su-Hyoung KANG , Myoung Geun CHA , Young Ki SHIN , Ji Seon LEE
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/124 , H01L27/1288 , H01L29/42384
摘要： Provided is a thin film transistor array panel. A thin film transistor array panel according to an exemplary embodiment includes a gate wire having a first region where the gate line is disposed, and a second region where the gate electrode is disposed, and a thickness of the gate wire formed in the first region is greater than the thickness of the gate wire that is formed in the second region.
摘要翻译：提供了一种薄膜晶体管阵列面板。根据示例性实施例的薄膜晶体管阵列面板包括栅极线，栅极线具有设置栅极线的第一区域和设置栅电极的第二区域，并且形成在第一区域中的栅极线的厚度为大于在第二区域中形成的栅极线的厚度。

46. 发明申请

US20110279146A1 COMPLEMENTARY SPIN TRANSISTOR LOGIC CIRCUIT 有权
标题翻译：补充旋转晶体管逻辑电路
公开(公告)号：US20110279146A1
公开(公告)日：2011-11-17
申请号：US12899778
申请日：2010-10-07
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
IPC分类号： H03K19/091
CPC分类号： H03K19/091 , B82Y10/00 , G11C11/16 , H03K19/18
摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.
摘要翻译：提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极电极连接到公共输入端子。

47. 发明授权

US07994555B2 Spin transistor using perpendicular magnetization 有权
标题翻译：旋转晶体管使用垂直磁化
公开(公告)号：US07994555B2
公开(公告)日：2011-08-09
申请号：US11949659
申请日：2007-12-03
申请人： Hyun-Cheol Koo , Suk-Hee Han , Joon-Yeon Chang , Hyung-Jun Kim , Jin-Seock Ma
发明人： Hyun-Cheol Koo , Suk-Hee Han , Joon-Yeon Chang , Hyung-Jun Kim , Jin-Seock Ma
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/16 , H01L29/20 , H01L29/66984
摘要： A spin transistor useful for device miniaturization and high-density integration is provided. The spin transistor includes: a semiconductor substrate including a channel layer; ferromagnetic source and drain disposed on the semiconductor substrate to be separated from each other and to be magnetized in a direction perpendicular to a surface of the channel layer; a gate formed on the semiconductor substrate between the source and the drain to adjust spins of electrons passing through the channel layer, wherein spin-polarized electrons are injected from the source to the channel layer, and the electrons injected into the channel layer pass though the channel layer and are injected into the drain, and wherein the spins of the electrons passing through the channel layer undergo precession due to a spin-orbit coupling induced magnetic field according to a voltage of the gate.
摘要翻译：提供了用于器件小型化和高密度集成的自旋晶体管。自旋晶体管包括：包括沟道层的半导体衬底; 设置在半导体衬底上的铁磁源极和漏极彼此分离并沿垂直于沟道层表面的方向被磁化; 形成在源极和漏极之间的半导体衬底上的栅极，以调节通过沟道层的电子的旋转，其中自旋极化电子从源极注入沟道层，并且注入沟道层的电子通过沟道层并且注入到漏极中，并且其中通过沟道层的电子的自旋由于根据栅极的电压的自旋 - 轨道耦合感应磁场而进行进动。

48. 发明申请

US20110042648A1 RECONFIGURABLE LOGIC DEVICE USING SPIN ACCUMULATION AND DIFFUSION 有权
标题翻译：使用旋转累积和扩展的可重构逻辑器件
公开(公告)号：US20110042648A1
公开(公告)日：2011-02-24
申请号：US12684586
申请日：2010-01-08
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
IPC分类号： H01L29/82 , H01L29/66
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L29/0665 , H01L29/1606 , H01L29/7783
摘要： A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.
摘要翻译：逻辑器件包括：具有沟道层的衬底; 铁磁材料的两个输入端子图案形成在基板上并且沿着沟道层的纵向方向彼此间隔开，以便用作逻辑门的输入端; 以及形成在所述基板上并且设置在所述两个输入端子图案之间以用作所述逻辑门的输出端子的铁磁材料的输出端子图案。输出端子图案通过使用从输入端子图案注入到沟道层中的电子自旋的自旋累积和扩散来读取输出电压。

49. 发明授权

US07894799B2 System and method for selectively receiving digital multimedia broadcasting (DMB) data broadcast 有权
标题翻译：用于选择性地接收数字多媒体广播（DMB）数据广播的系统和方法
公开(公告)号：US07894799B2
公开(公告)日：2011-02-22
申请号：US11348747
申请日：2006-02-07
申请人： Hyung-Jun Kim
发明人： Hyung-Jun Kim
IPC分类号： H04M3/42
CPC分类号： H04H20/55 , H04H20/426 , H04H60/91 , H04H2201/40
摘要： A method and system includes a terminal having a function of receiving a DMB data broadcast, a service network information (SNI) application management server that transmits SNI to the mobile communication terminal in response to a request from the mobile communication terminal, a data broadcast server that provides information regarding the DMB data broadcast, a DMB transmitting station that transmits the information regarding the DMB data broadcast, and a Transport Protocol Experts Group (TPEG) service provider that provides the SNI to the SNI management server, and data broadcast information including the SNI to the data broadcast server. The mobile communication terminal receives the SNI from the SNI management server via a cellular network to determine the time when a user's desired data broadcast starts, and receives a data broadcast from the DMB transmitting station only at that time.
摘要翻译：一种方法和系统包括具有接收DMB数据广播功能的终端，响应于来自移动通信终端的请求向移动通信终端发送SNI的服务网络信息（SNI）应用管理服务器，数据广播服务器提供关于DMB数据广播的信息，发送关于DMB数据广播的信息的DMB发送站以及向SNI管理服务器提供SNI的传输协议专家组（TPEG）服务提供商，以及包括 SNI到数据广播服务器。移动通信终端经由蜂窝网络从SNI管理服务器接收SNI，以确定用户期望的数据广播开始的时间，并且仅在那时从DMB发送站接收数据广播。

50. 发明授权

US07839675B2 Magnetic memory device and method for reading magnetic memory cell using spin hall effect 有权
标题翻译：磁记忆装置及使用旋转厅效应读磁记忆体的方法
公开(公告)号：US07839675B2
公开(公告)日：2010-11-23
申请号：US12360964
申请日：2009-01-28
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
IPC分类号： G11C11/18 , G11C11/00 , G11C11/14
CPC分类号： H01L43/065 , G11C11/161 , G11C11/1673 , G11C11/18 , H01L27/226 , H01L29/66462 , H01L29/7781
摘要： A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.
摘要翻译：磁存储器件包括用于读取的衬底和磁存储单元。衬底具有通道层。磁性存储单元形成在基板上，并具有将自旋数据传送到通过沟道层的电子的磁化磁性材料。存储在磁存储单元中的数据被通过通道沟道层的电子通过沟道层的宽度方向偏离旋转霍尔效应而产生的沟道层的两侧端的电压读取。

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