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41. 发明申请

US20090283789A1 Semiconductor Light Emitting Device 失效
标题翻译：半导体发光装置
公开(公告)号：US20090283789A1
公开(公告)日：2009-11-19
申请号：US12195741
申请日：2008-08-21
申请人： Chang Tae Kim , Gi Yeon Nam , Byeong Kyun Choi , Hyun Suk Kim
发明人： Chang Tae Kim , Gi Yeon Nam , Byeong Kyun Choi , Hyun Suk Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.
摘要翻译：本公开涉及通过电子和空穴的复合产生光的半导体发光器件，其包括：用于提供电子和空穴中的一个的第一指状电极，提供另一个电子和空穴的第二指状电极，并且以第一间隔与第一指状电极间隔开; 以及电连接到第一指状电极的第三指状电极，并且以比第一间隔小的第二间隔与第二指状电极间隔开。

42. 发明申请

US20090159962A1 Non-Volatile Memory Devices 有权
标题翻译：非易失性存储器件
公开(公告)号：US20090159962A1
公开(公告)日：2009-06-25
申请号：US12338308
申请日：2008-12-18
申请人： Hyun Suk Kim , Sun-II Shim , Chang-Seok Kang , Won-Cheol Jeong , Jung-Dal Choi , Jae-Kwan Park , Seung-Hyun Lim , Sun-Jung Kim
发明人： Hyun Suk Kim , Sun-II Shim , Chang-Seok Kang , Won-Cheol Jeong , Jung-Dal Choi , Jae-Kwan Park , Seung-Hyun Lim , Sun-Jung Kim
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/7881 , H01L29/792
摘要： Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.
摘要翻译：提供了非易失性存储器件，其包括在衬底上的控制栅电极; 在控制栅电极和衬底之间的电荷存储绝缘层; 在电荷存储绝缘层和衬底之间的隧道绝缘层; 电荷存储绝缘层和控制栅电极之间的阻挡绝缘层; 以及隧道绝缘层和阻挡绝缘层之间的材料层，材料层具有构成势阱底部的能级。

43. 发明申请

US20080182354A1 METHODS OF FABRICATING CMOS IMAGE SENSORS 审中-公开
标题翻译：制作CMOS图像传感器的方法
公开(公告)号：US20080182354A1
公开(公告)日：2008-07-31
申请号：US11950249
申请日：2007-12-04
申请人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
发明人： Jong-Jin Lee , Ju-Hyun Ko , Jong-Eun Park , Hyun-Suk Kim , Dong-Yoon Jang
IPC分类号： H01L31/18
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1463 , H01L27/14681 , H01L27/14689
摘要： CMOS image sensors and related methods of fabricating CMOS image sensors are disclosed. Fabrication of a CMOS image sensor can include forming a first impurity region having a first conductivity type in a semiconductor substrate. A second impurity region having a second conductivity type is formed in the semiconductor substrate adjacent to the first impurity region. A third impurity region having the first conductivity type is formed in the semiconductor substrate and located below the second impurity region. A transfer gate is formed on the semiconductor substrate and at least partially overlaps the first, second, and third impurity regions. A photo sensitive device is formed in the semiconductor substrate and adjacent to one side of the transfer gate. A floating diffusion region is formed in the semiconductor substrate and located adjacent to an opposite side of the transfer gate from the photosensitive device.
摘要翻译：公开了CMOS图像传感器和制造CMOS图像传感器的相关方法。 CMOS图像传感器的制造可以包括在半导体衬底中形成具有第一导电类型的第一杂质区域。在与第一杂质区相邻的半导体衬底中形成具有第二导电类型的第二杂质区。具有第一导电类型的第三杂质区形成在半导体衬底中并位于第二杂质区的下方。传输栅极形成在半导体衬底上并且至少部分地与第一，第二和第三杂质区重叠。光敏元件形成在半导体衬底中并与传输门的一侧相邻。浮动扩散区域形成在半导体衬底中并且位于与传感栅极的与光敏器件相反的一侧。

44. 发明申请

US20050237293A1 Liquid crystal display apparatus 有权
标题翻译：液晶显示装置
公开(公告)号：US20050237293A1
公开(公告)日：2005-10-27
申请号：US11115234
申请日：2005-04-27
申请人： Hyun-suk Kim , Jin-bog Kim
发明人： Hyun-suk Kim , Jin-bog Kim
IPC分类号： G02F1/133 , G09G3/34 , G09G3/36
CPC分类号： G09G3/3426 , G09G3/3413 , G09G2320/0606 , G09G2320/0633 , G09G2320/0666
摘要： An LCD apparatus with an LCD panel displaying a picture thereon, including a backlight array in which a plurality of light emitting devices illuminating the LCD panel with a plurality of colors is arranged to have a predetermined pattern. A backlight driver drives each light emitting device to emit light and to adjust light intensity; and a controller controls the backlight driver to adjust a white balance of a picture displayed on the LCD panel. With this configuration, an LCD apparatus is provided, in which a white balance is adjusted without making a loss in a representable brightness level, i.e., brightness, and lowering a contrast ratio. Also included is an LCD apparatus, in which a white balance is adjusted according to formats of an input video signal.
摘要翻译：一种具有在其上显示图像的LCD面板的液晶显示装置，包括背光阵列，其中以多种颜色照亮LCD面板的多个发光装置被布置成具有预定图案。背光驱动器驱动每个发光器件发光并调节光强度; 并且控制器控制背光驱动器来调节LCD面板上显示的图像的白平衡。利用这种结构，提供了一种LCD装置，其中调节白平衡而不会造成可表示的亮度水平的损失，即亮度，并降低对比度。还包括一种LCD装置，其中根据输入视频信号的格式调整白平衡。

45. 发明授权

US09035294B2 Transistors, methods of manufacturing the same, and electronic devices including transistors 有权
标题翻译：晶体管及其制造方法以及包括晶体管的电子器件
公开(公告)号：US09035294B2
公开(公告)日：2015-05-19
申请号：US13550752
申请日：2012-07-17
申请人： Joon-seok Park , Tae-sang Kim , Hyun-suk Kim , Myung-kwan Ryu , Jong-baek Seon , Kyoung-seok Son , Sang-yoon Lee , Seok-jun Seo
发明人： Joon-seok Park , Tae-sang Kim , Hyun-suk Kim , Myung-kwan Ryu , Jong-baek Seon , Kyoung-seok Son , Sang-yoon Lee , Seok-jun Seo
IPC分类号： H01L29/10 , B32B3/26 , H01L29/786 , H01L29/49
CPC分类号： B32B3/26 , H01L29/4908 , H01L29/786 , H01L29/7869 , Y10T428/24479
摘要： A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.
摘要翻译：晶体管可以包括由氧化物半导体形成的沟道层。氧化物半导体可以包括GaZnON，并且沟道层的Ga含量与Ga和Zn的总含量的比例为约0.5至约4.5原子％。

46. 外观设计

USD714064S1 Detachable shield for use with luggage 有权
标题翻译：可拆卸护罩，用于行李箱
公开(公告)号：USD714064S1
公开(公告)日：2014-09-30
申请号：US29446453
申请日：2013-02-23
申请人： Hyun Suk Kim
设计人： Hyun Suk Kim

47. 发明授权

US08314457B2 Non-volatile memory devices 有权
标题翻译：非易失性存储器件
公开(公告)号：US08314457B2
公开(公告)日：2012-11-20
申请号：US13095408
申请日：2011-04-27
申请人： Hyun-Suk Kim , Sun-Il Shim , Chang-Seok Kang , Won-Cheol Jeong , Jung-Dal Choi , Jae-Kwan Park , Seung-Hyun Lim , Sun-Jung Kim
发明人： Hyun-Suk Kim , Sun-Il Shim , Chang-Seok Kang , Won-Cheol Jeong , Jung-Dal Choi , Jae-Kwan Park , Seung-Hyun Lim , Sun-Jung Kim
IPC分类号： H01L29/66
CPC分类号： H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/7881 , H01L29/792
摘要： Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.
摘要翻译：提供了非易失性存储器件，其包括在衬底上的控制栅电极; 在控制栅电极和衬底之间的电荷存储绝缘层; 在电荷存储绝缘层和衬底之间的隧道绝缘层; 电荷存储绝缘层和控制栅电极之间的阻挡绝缘层; 以及隧道绝缘层和阻挡绝缘层之间的材料层，材料层具有构成势阱底部的能级。

48. 发明申请

US20120168757A1 Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors 审中-公开
标题翻译：晶体管，制造方法和包括晶体管的电子器件
公开(公告)号：US20120168757A1
公开(公告)日：2012-07-05
申请号：US13165301
申请日：2011-06-21
申请人： Kyung-bae Park , Myung-kwan Ryu , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Hyun-suk Kim , Wan-joo Maeng , Joon-seok Park
发明人： Kyung-bae Park , Myung-kwan Ryu , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Hyun-suk Kim , Wan-joo Maeng , Joon-seok Park
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78693
摘要： A transistor includes a channel layer disposed above a gate and including an oxide semiconductor. A source electrode contacts a first end portion of the channel layer, and a drain electrode contacts a second end portion of the channel layer. The channel layer further includes a fluorine-containing region formed in an upper portion of the channel layer between the source electrode and the drain electrode.
摘要翻译：晶体管包括设置在栅极上方并包括氧化物半导体的沟道层。源电极接触沟道层的第一端部，漏极接触沟道层的第二端部。沟道层还包括形成在源极和漏极之间的沟道层的上部的含氟区。

49. 发明申请

US20110297564A1 CASE FOR TABLET PERSONAL COMPUTER 审中-公开
标题翻译：案例个人计算机
公开(公告)号：US20110297564A1
公开(公告)日：2011-12-08
申请号：US12831495
申请日：2010-07-07
申请人： Ki Sang Kim , Hyun Suk Kim
发明人： Ki Sang Kim , Hyun Suk Kim
IPC分类号： B65D85/00
CPC分类号： G06F1/1628 , A45C11/00 , A45C2011/003 , A45C2200/15 , F16M11/10 , F16M13/00
摘要： A case of tablet PC having a display area on the front side comprises; a housing 10 made of hard material to receive the tablet PC 1 as the front side display of it is exposed, including a first housing part 20 having the first hinge 21 on one side and the second hinge 23 on the other side, and a second housing part 30 hinged on the second hinge 23 of the first housing part 20 to be rotated toward the back side of the first housing part 20, and a cover 40 made of hard material and hinged on the first hinge 21 of the housing 10 on one side to open and close the front side display of the tablet PC 1 and having a stopper projection 41 on the other side, the second housing part 30 including side walls 12 to wrap around the side of the tablet PC 1, and the side walls 12 having inward projections 13 to cover the front edge of the tablet PC.
摘要翻译：具有前侧显示区域的平板电脑的情况包括：由硬质材料制成的用于接收作为其前侧显示器的平板电脑1的壳体10包括具有一侧的第一铰链21和另一侧的第二铰链23的第一壳体部分20，壳体部分30铰接在第一壳体部分20的第二铰链23上，以朝向第一壳体部分20的后侧旋转;以及由硬质材料制成并且铰接在壳体10的第一铰链21上的盖40 侧面打开和关闭平板PC 1的前侧显示器并且在另一侧具有止动突起41，第二壳体部分30包括围绕平板PC 1侧面的侧壁12和侧壁12 具有向内突起13以覆盖平板电脑的前边缘。

50. 发明授权

US07973357B2 Non-volatile memory devices 有权
标题翻译：非易失性存储器件
公开(公告)号：US07973357B2
公开(公告)日：2011-07-05
申请号：US12338308
申请日：2008-12-18
申请人： Hyun-Suk Kim , Sun-Il Shim , Chang-Seok Kang , Won-Cheol Jeong , Jung-Dal Choi , Jae-Kwan Park , Seung-Hyun Lim , Sun-Jung Kim
发明人： Hyun-Suk Kim , Sun-Il Shim , Chang-Seok Kang , Won-Cheol Jeong , Jung-Dal Choi , Jae-Kwan Park , Seung-Hyun Lim , Sun-Jung Kim
IPC分类号： H01L29/66
CPC分类号： H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/7881 , H01L29/792
摘要： Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.
摘要翻译：提供了非易失性存储器件，其包括在衬底上的控制栅电极; 在控制栅电极和衬底之间的电荷存储绝缘层; 在电荷存储绝缘层和衬底之间的隧道绝缘层; 电荷存储绝缘层和控制栅电极之间的阻挡绝缘层; 以及隧道绝缘层和阻挡绝缘层之间的材料层，材料层具有构成势阱底部的能级。

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