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    • 42. 发明授权
    • Active matrix organic light-emitting diode and manufacturing method thereof
    • 有源矩阵有机发光二极管及其制造方法
    • US06797985B1
    • 2004-09-28
    • US10635328
    • 2003-08-05
    • Hsin-Fei MengLai-Cheng ChenSheng-fu HorngLichi Lin
    • Hsin-Fei MengLai-Cheng ChenSheng-fu HorngLichi Lin
    • H01L2916
    • H01L27/3274H01L27/12
    • An active matrix organic light-emitting diode and manufacturing method thereof is provided. A thin film transistor having a gate, a source and a drain is formed over a substrate. An anode layer is formed over the substrate such that the anode layer connects electrically with the source terminal of the thin film transistor. An organic layer is formed to cover the anode layer and the thin film transistor. The organic layer between the source and the drain serves as a channel region of the thin film transistor. A cathode layer is formed over the organic layer. Since the molecules inside the organic layer are aligned in a direction from the source to the drain and perpendicular to a direction from the anode layer to the cathode layer, electron mobility at the channel region is enhanced and the emitting efficiency of the diode is increased.
    • 提供一种有源矩阵有机发光二极管及其制造方法。 在衬底上形成具有栅极,源极和漏极的薄膜晶体管。 阳极层形成在衬底上,使得阳极层与薄膜晶体管的源极端子电连接。 形成有机层以覆盖阳极层和薄膜晶体管。 源极和漏极之间的有机层用作薄膜晶体管的沟道区。 在有机层上形成阴极层。 由于有机层内的分子在从源极到漏极的方向上排列并且垂直于从阳极层到阴极层的方向,所以沟道区域的电子迁移率增强,并且二极管的发射效率增加。
    • 44. 发明申请
    • METAL OXIDE SEMICONDUCTOR TRANSISTOR
    • 金属氧化物半导体晶体管
    • US20120313084A1
    • 2012-12-13
    • US13480742
    • 2012-05-25
    • CHUANG-CHUANG TSAIHsiao-Wen ZanHsin-Fei MengChun-Cheng Yeh
    • CHUANG-CHUANG TSAIHsiao-Wen ZanHsin-Fei MengChun-Cheng Yeh
    • H01L29/22H01L51/30
    • H01L29/78696H01L29/78606H01L29/78693
    • A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
    • 金属氧化物半导体晶体管包括栅极,金属氧化物有源层,栅极绝缘层,源极和漏极。 金属氧化物活性层具有第一表面和第二表面,并且第一表面面向栅极。 栅极绝缘层设置在栅极和金属氧化物有源层之间。 源极和漏极分别连接到金属氧化物活性层。 第二表面限定了源极和漏极之间的迁移率增强区域。 迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。 金属氧化物半导体晶体管具有高载流子迁移率。