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41. 发明申请

US20100129991A1 NITRIDE SEMICONDUCTOR DEVICE HAVING A SILICON-CONTAINING LAYER AND MANUFACTURING METHOD THEREOF 有权
标题翻译：具有含硅层的氮化物半导体器件及其制造方法
公开(公告)号：US20100129991A1
公开(公告)日：2010-05-27
申请号：US12641421
申请日：2009-12-18
申请人： Katsuomi SHIOZAWA , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
发明人： Katsuomi SHIOZAWA , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
IPC分类号： H01L21/20
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译：提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。

42. 发明授权

US07683398B2 Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof 有权
标题翻译：具有含硅连接层的氮化物半导体器件及其制造方法
公开(公告)号：US07683398B2
公开(公告)日：2010-03-23
申请号：US11681235
申请日：2007-03-02
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
IPC分类号： H01L31/072 , H01L29/24 , H01L29/06
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译：提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。

43. 发明申请

US20080020502A1 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20080020502A1
公开(公告)日：2008-01-24
申请号：US11772297
申请日：2007-07-02
申请人： Toshihiko Shiga , Hitoshi Sakuma
发明人： Toshihiko Shiga , Hitoshi Sakuma
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/1039 , H01S5/2009 , H01S5/2086 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/3211 , H01S5/34333
摘要： A method for manufacturing a laser diode includes: providing a semiconductor structure in which semiconductor layers are laminated; forming a waveguide ridge in the layers; forming an SiO2 film over the entire surface; forming a second resist pattern covering the SiO2 film in channels adjacent the waveguide ridge such that top surfaces of the second resist pattern in the channels are higher than the top surface of a p-GaN layer in the waveguide ridge and lower than the top surface of the SiO2 film on the top of the waveguide ridge, the second resist pattern exposing the top surface of the SiO2 film on the top of the waveguide ridge; removing the SiO2 film, using the second resist pattern as a mask, to expose the top surface of the p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.
摘要翻译：一种激光二极管的制造方法，其特征在于，具备：层叠半导体层的半导体结构体; 在层中形成波导脊; 在整个表面上形成SiO 2膜; 在与所述波导脊相邻的通道中形成覆盖所述SiO 2膜的第二抗蚀剂图案，使得所述通道中的所述第二抗蚀剂图案的顶表面高于所述波导中的p-GaN层的顶表面并且比波导脊的顶部上的SiO 2膜的顶表面低，第二抗蚀剂图案将SiO 2膜的顶表面暴露在顶部的波导脊; 使用第二抗蚀剂图案作为掩模去除SiO 2膜，以暴露波导脊中的p-GaN层的顶表面; 以及在p-GaN层的顶表面上形成电极层。

44. 发明授权

US5328658A Method of refining chromium-containing steel 失效
标题翻译：含铬钢的精炼方法
公开(公告)号：US5328658A
公开(公告)日：1994-07-12
申请号：US101730
申请日：1993-08-04
申请人： Osamu Egawa , Yoshihiro Naito , Hitoshi Sakuma
发明人： Osamu Egawa , Yoshihiro Naito , Hitoshi Sakuma
IPC分类号： C21C5/00 , C21C7/10 , C21C5/34
CPC分类号： C21C5/005 , C21C7/10
摘要： A refining method of decarburizing a molten steel containing a large quantity of chromium, which can be completed in a shorter period, and therefore, with reduced consumption of Ar gas, and with safety of operation. A mixed gas of O.sub.2 and Ar is blown into a molten steel in a refining vessel through a tuyere at the bottom of the vessel under atmospheric pressure, and when the C-concentration becomes to such a low level as 0.15% (by weight) or less, vacuum suction is applied to reduce the pressure to 150-200 Torr, and only Ar gas is blown. At the change of the refining conditions from atmospheric to vacuum or during the vacuum refining a reducing agent such as ferrosilicon is added to the molten steel to reduce Cr-oxides for recovery. Even if the amount of the reducing agent is less than that necessary for reducing all the Cr oxides, majority of Cr can be recovered. If an excess amount is used, a steel of low nitrogen in addition to low carbon is obtained.Whole or a portion of Ar can be replaced with N.sub.2. Refining may be carried out economically when compared with conventional refining method such as AOD process by reducing At-consumption. It is possible to obtain a steel containing desired nitrogen by changing the blown gas from N.sub.2 to Ar and choosing the timing of changing depending on the desired N-concentration.
摘要翻译：对含有大量铬的钢水进行脱碳的精炼方法，其可以在较短的时间内完成，因此减少Ar气的消耗，并且具有操作的安全性。 O 2和Ar的混合气体在大气压下通过容器底部的风口吹入精炼容器内的钢水中，当C浓度变为如此低的0.15％（重量）或较少，采用真空抽吸将压力降低到150-200乇，只有Ar气体被吹出。在从大气到真空的精炼条件的改变中，或者在真空精炼期间，将还原剂如硅铁加入到钢水中以还原Cr氧化物以进行回收。即使还原剂的量少于还原所有Cr氧化物所需的量，也可以回收大部分的Cr。如果使用过量，则得到低碳以外的低碳钢。 Ar的全部或部分可以用N2代替。与常规精炼方法（如通过减少耗电量的AOD方法）相比，精炼可以经济地进行。通过将吹入的气体从N 2改变为Ar并选择根据期望的N浓度而改变的时机，可以获得含有所需氮的钢。

45. 发明申请

US20190211426A1 SPHEROIDAL GRAPHITE CAST IRON 审中-公开
公开(公告)号：US20190211426A1
公开(公告)日：2019-07-11
申请号：US16233535
申请日：2018-12-27
申请人： Takumi Hijii , Yoshimasa Ureshino , Hitoshi Sakuma , Gou Nakamura , Zhong-zhi Zhang
发明人： Takumi HIJII , Yoshimasa URESHINO , Hitoshi SAKUMA , Gou NAKAMURA , Zhong-zhi ZHANG
IPC分类号： C22C37/04 , C22C37/06 , C22C37/10 , C22C33/10
CPC分类号： C22C37/04 , C22C33/10 , C22C37/06 , C22C37/10
摘要： A spheroidal graphite cast iron having an excellent impact strength at low temperature and a method for producing the same are provided. The present disclosure relates to the spheroidal graphite cast iron comprising: C: 3.5 mass % to 4.2 mass %; Si: 2.0 mass % to 2.8 mass %; Mn: 0.2 mass % to 0.4 mass %; Cu: 0.1 mass % to 0.7 mass %; Mg: 0.02 mass % to 0.06 mass %; Cr: 0.01 mass % to 0.15 mass %; and the balance: Fe and inevitable impurities, wherein Mn+Cr+Cu is 0.431 mass % to 1.090 mass %, a graphite nodule count is 230/mm2 or less, and a pearlite fraction is 30% to 85%.

46. 发明授权

US07785697B2 Thin film device 有权
标题翻译：薄膜装置
公开(公告)号：US07785697B2
公开(公告)日：2010-08-31
申请号：US11819263
申请日：2007-06-26
申请人： Taku Masai , Hitoshi Sakuma , Kyung-Ku Choi , Toshiyasu Fujiwara
发明人： Taku Masai , Hitoshi Sakuma , Kyung-Ku Choi , Toshiyasu Fujiwara
IPC分类号： B32B3/02
CPC分类号： H01L23/5227 , H01F17/0033 , H01F41/042 , H01F2017/0073 , H01L2924/0002 , Y10T428/24521 , Y10T428/24612 , H01L2924/00
摘要： The present invention provides a thin film device in which resin film does not easily separate. In a thin film device, a conductor pattern is formed on one of the main surfaces of a plate-shaped base, and the conductor pattern is covered with a resin film. This conductor pattern has a bottom face disposed on the main surface of the base, a top face that faces the bottom face and is distant from the main surface of the base, and two side faces that connect the bottom face and the top face. A depressed portion is formed in these side faces, and an insulation film extends into the depressed portion.
摘要翻译：本发明提供一种薄膜器件，其中树脂膜不容易分离。在薄膜器件中，在板状基体的一个主表面上形成导体图案，并且用树脂膜覆盖导体图案。该导体图案具有设置在基座的主表面上的底面，面向底面并远离基座的主表面的顶面以及连接底面和顶面的两个侧面。在这些侧面形成有凹部，绝缘膜延伸到凹部。

47. 发明申请

US20090184336A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090184336A1
公开(公告)日：2009-07-23
申请号：US12170503
申请日：2008-07-10
申请人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
发明人： Takafumi Oka , Shinji Abe , Kazushige Kawasaki , Hitoshi Sakuma
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode.
摘要翻译：一种半导体发光器件包括：半导体层; 半导体层上的绝缘膜，并具有开口; 绝缘膜上的多层粘合剂层; 以及通过开口与半导体层接触并与多层粘合剂层接触的Pd电极。多层粘合剂层包括顶部的Au层和在Au层和Pd电极之间的界面处的Au和Pd的合金。

48. 发明申请

US20080211062A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20080211062A1
公开(公告)日：2008-09-04
申请号：US11681235
申请日：2007-03-02
申请人： Katsuomi SHIOZAWA , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
发明人： Katsuomi SHIOZAWA , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
IPC分类号： H01L29/20 , H01L21/20 , H01L21/283
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (20) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译：提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。氮化物半导体器件包括在其上形成半导体元件的n型GaN衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（20）由除氮化物半导体之外并且包含硅的材料构成。

49. 发明申请

US20060175788A1 Suspension arm 有权
标题翻译：悬臂
公开(公告)号：US20060175788A1
公开(公告)日：2006-08-10
申请号：US11324788
申请日：2006-01-03
申请人： Kazunobu Nuno , Kazunari Azuchi , Kiyohito Gyobu , Hitoshi Sakuma
发明人： Kazunobu Nuno , Kazunari Azuchi , Kiyohito Gyobu , Hitoshi Sakuma
IPC分类号： B60G3/20
CPC分类号： B60G3/20 , B60G7/001 , B60G11/14 , B60G2200/144 , B60G2202/12 , B60G2204/1244 , B60G2204/129 , B60G2204/143 , B60G2204/148 , B60G2204/41 , B60G2204/416 , B60G2206/012 , B60G2206/10 , B60G2206/162 , B60G2206/7102 , B60G2206/8102 , B60G2206/8103 , B60G2206/8105 , Y10T29/49622
摘要： A suspension arm made of an aluminum alloy extruded profile having a portion forming a bottom portion, portions forming at least two vertical walls, and a horizontal rib which connects the two vertical walls, wherein a suspension part lower end support portion is formed between the two vertical walls or at the bottom portion by removing a part of the horizontal rib. It is preferable to gradually change the interval between the two vertical walls in the portion in which the horizontal rib is removed.
摘要翻译：一种由铝合金挤压型材制成的悬臂，其具有形成底部的部分，形成至少两个垂直壁的部分和连接两个垂直壁的水平肋，其中悬挂部分下端支撑部分形成在两者之间垂直壁或在底部，通过移除水平肋的一部分。优选地，在水平肋被去除的部分中逐渐改变两个垂直壁之间的间隔。

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