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41. 发明申请

US20100140710A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100140710A1
公开(公告)日：2010-06-10
申请号：US12630396
申请日：2009-12-03
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L27/12 , H01L21/86
CPC分类号： H01L21/84 , H01L27/105 , H01L27/11 , H01L27/1116 , H01L27/12 , H01L29/78648
摘要： A semiconductor device includes: a semiconductor layer; an element isolation region formed in the semiconductor layer for separation between a memory element part and a logic element part; first and second field-effect transistors formed in the memory element part and having first and second gate electrodes on a first surface side of the semiconductor layer and a second surface side opposite to the first surface, respectively, and having a source and drain region in common with each other; a third field-effect transistor formed in the logic element part and having a third gate electrode on the second surface side; and first and second insulating films formed on the semiconductor layer to cover the first field-effect transistor and the second and third field-effect transistors, respectively. The first field-effect transistor and the second field-effect transistor are fully-depleted field-effect transistors. The first gate electrode and the second gate electrode are electrically connected.
摘要翻译：半导体器件包括：半导体层; 形成在所述半导体层中用于在存储元件部分和逻辑元件部分之间分离的元件隔离区; 第一和第二场效应晶体管形成在存储元件部分中，并且在半导体层的第一表面侧上分别具有第一和第二栅极电极以及与第一表面相对的第二表面侧，并且具有源极和漏极区域相互共同; 形成在所述逻辑元件部分中并且在所述第二表面侧上具有第三栅电极的第三场效应晶体管; 以及形成在所述半导体层上以分别覆盖所述第一场效应晶体管和所述第二和第三场效应晶体管的第一和第二绝缘膜。第一场效应晶体管和第二场效应晶体管是完全耗尽的场效应晶体管。第一栅电极和第二栅极电连接。

42. 发明授权

US07368579B2 1-substituted-4-nitroimidazole compound and process for producing the same 失效
标题翻译： 1-取代-4-硝基咪唑化合物及其制备方法
公开(公告)号：US07368579B2
公开(公告)日：2008-05-06
申请号：US10523008
申请日：2003-10-14
申请人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D407/06
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n—R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH 2的基团， X是卤素原子或式-S（O）n R 1）的基团）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

43. 发明申请

US20060094767A1 2,3-Dihydro-6-nitroimidazo[2,1-b]oxazoles 有权
标题翻译： 2,3-二氢-6-硝基咪唑并[2,1-b]恶唑
公开(公告)号：US20060094767A1
公开(公告)日：2006-05-04
申请号：US10530429
申请日：2003-10-10
申请人： Hidetsugu Tsubouchi , Hirofumi Sasaki , Hideaki Kuroda , Motohiro Itotani , Takeshi Hasegawa , Yoshikazu Haraguchi , Takeshi Kuroda , Takayuki Matsuzaki
发明人： Hidetsugu Tsubouchi , Hirofumi Sasaki , Hideaki Kuroda , Motohiro Itotani , Takeshi Hasegawa , Yoshikazu Haraguchi , Takeshi Kuroda , Takayuki Matsuzaki
IPC分类号： A61K31/424 , C07D491/02
CPC分类号： C07D498/04 , C07D498/20 , C07F7/0812
摘要： The present invention provides a 2,3-dihydro-6-nitroimidazo[2,1-b]oxazole compound represented by the following general formula: wherein R1 represents a hydrogen atom or C1-C6 alkyl group, n represents an integer of 0 to 6, R2 represents a group —OR3 or the like, and R3 represents a hydrogen atom, C1-C6 alkyl group or the like, or R1 and —(CH2)nR2 may bind to each other together with carbon atoms adjacent thereto through nitrogen atoms so as to form a spiro ring represented by the general formula (H): wherein R41 is hydrogen, C1-C6 alkyl group or the like. The present compound has an excellent bactericidal action against Mycobacterium tuberculosis, multi-drug-resistant Mycobacterium tuberculosis, and atypical acid-fast bacteria.
摘要翻译：本发明提供由以下通式表示的2,3-二氢-6-硝基咪唑并[2,1-b]恶唑化合物：其中R 1表示氢原子或C 1 -C 6烷基，n表示0〜6的整数，R 2表示基团-OR 3等，R 3表示氢原子，C 1 -C 6烷基等，或R 1和 - （CH 2）n R 2 R 2，可以通过氮原子与与其相邻的碳原子彼此结合形成由通式（H）表示的螺环：其中R 41是氢，C 1 -C 6烷基或喜欢。本发明化合物对结核分枝杆菌，多药耐药结核分枝杆菌和非典型酸性抗菌细菌具有优异的杀菌作用。

44. 发明申请

US20060079697A1 1-substituted-4-nitroimidazole compound and process for producing the same 失效
标题翻译： 1-取代-4-硝基咪唑化合物及其制备方法
公开(公告)号：US20060079697A1
公开(公告)日：2006-04-13
申请号：US10523008
申请日：2003-10-14
申请人： Fumitake Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitake Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D405/02
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n—R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH 2的基团， X是卤素原子或式-S（O）n R 1）的基团）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

45. 发明授权

US06255685B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06255685B1
公开(公告)日：2001-07-03
申请号：US08968456
申请日：1997-11-12
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L2348
CPC分类号： H01L21/76808 , H01L21/76807 , H01L21/76877 , H01L23/522 , H01L27/10885 , H01L27/10888 , H01L27/10894 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device wherein in formation of the wiring connection, an opening is made up to the middle of the insulating film, a side wall is formed, a burying wiring with the lower portion is arranged, a pad is formed, and a pad is formed in a polyplug contact without a masking step. Further, a conductive material is filled in the hole in the insulating film, a hole is opened in this material, a side wall is formed on the inner wall, a shrunken contact is opened by using this as a mask, and the conductive material is filled.
摘要翻译：一种半导体器件，其中在形成布线连接时，开口形成在绝缘膜的中间，形成侧壁，布置有下部的埋入布线，形成焊盘，形成焊盘在没有掩蔽步骤的息肉接触中。此外，导电材料填充在绝缘膜的孔中，在该材料中开孔，在内壁上形成侧壁，通过使用它作为掩模将收缩的接触打开，导电材料为填充。

46. 发明授权

US5374579A Method of fabricating a semiconductor DRAM 失效
标题翻译：制造半导体DRAM的方法
公开(公告)号：US5374579A
公开(公告)日：1994-12-20
申请号：US108518
申请日：1993-08-18
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/70
CPC分类号： H01L27/10852
摘要： A semiconductor DRAM comprises: a stacked capacitor (41) comprising a storage node electrode (42) a capacitor dielectric film (44) and a plate electrode (43), and formed in a memory cell area of a semiconductor substrate (11); and bit lines (18). A plate electrode forming film (53) having a portion extending over the entire memory cell area (21) or at least over an area including the plate electrode (43) and bit contact forming portions (24) in the memory cell area (21), and contact forming portions (34) in the peripheral circuit area (31) is formed, a second layer insulating film (15) is formed over the plate electrode forming film (53), bit contact holes (25) and contact holes (36) are formed respectively in the bit contact forming portions (24) and the contact forming portions (31) through the plate electrode forming film (53), the side surfaces of the bit contact holes (25) and the contact holes (36) are coated respectively with insulating films (26, 37), conductive plugs (16, 17) are formed in the bit contact holes (25) and the contact holes (36), and bit lines (18) are formed on the second layer insulating film (15) so as to be connected to the conductive plugs (16, 17).
摘要翻译：半导体DRAM包括：层叠电容器（41），包括存储节点电极（42），电容器电介质膜（44）和平板电极（43），并形成在半导体衬底（11）的存储单元区域中。和位线（18）。一种板状电极形成膜（53），其具有在整个存储单元区域（21）上延伸的部分或至少包括存储单元区域（21）中的板状电极（43）和位触点形成部分（24）的区域，在外围电路区域（31）中形成接触形成部（34），在平板电极形成膜（53）上形成第二层绝缘膜（15），钻头接触孔（25）和接触孔）分别通过平板电极形成膜（53）分别形成在位接触形成部分（24）和接触形成部分（31）中，钻头接触孔（25）和接触孔（36）的侧表面是分别涂覆有绝缘膜（26,37）的导电插塞（16,17）形成在钻头接触孔（25）和接触孔（36）中，位线（18）形成在第二层绝缘膜（15），以便连接到导电塞（16,17）。

47. 发明申请

US20150045356A1 PIPERAZINE-SUBSTITUTED BENZOTHIOPHENE DERIVATIVES AS ANTIPSYCHOTIC AGENTS 有权
标题翻译：哌嗪取代的苯并噻吩衍生物作为抗生素代谢物
公开(公告)号：US20150045356A1
公开(公告)日：2015-02-12
申请号：US14343579
申请日：2012-09-07
申请人： Hiroshi Yamashita , Yohji Sakurai , Motoyuki Miyamoto , Yuichi Nakamura , Hideaki Kuroda , Takuya Minowa
发明人： Hiroshi Yamashita , Yohji Sakurai , Motoyuki Miyamoto , Yuichi Nakamura , Hideaki Kuroda , Takuya Minowa
IPC分类号： C07D409/14 , C07D409/12
CPC分类号： A61K31/496 , A61K31/501 , A61K31/506 , A61K31/5377 , A61K31/541 , A61K31/675 , A61K31/695 , C07D409/12 , C07D409/14
摘要： Provided is a superior, novel heterocyclic compound with improved solubility in oil such as sesame oil and benzyl benzoate, which has a broader treatment spectrum, causes less side effects, and is superior in tolerability and safety, and use thereof. A heterocyclic compound represented by the formula (I) wherein each symbol is as defined in the specification, or a salt thereof.
摘要翻译：本发明提供一种具有较好的溶解度的优异的新型杂环化合物，如芝麻油和苯甲酸苄酯，其处理范围更广，副作用更小，耐受性和安全性优异，且使用方便。由式（I）表示的杂环化合物，其中每个符号如说明书中所定义，或其盐。

48. 发明申请

US20120273887A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20120273887A1
公开(公告)日：2012-11-01
申请号：US13544036
申请日：2012-07-09
申请人： Hideaki KURODA
发明人： Hideaki KURODA
IPC分类号： H01L27/12
CPC分类号： H01L27/105 , H01L21/84 , H01L22/14 , H01L22/20 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L27/1203 , H01L29/78 , H01L29/7855
摘要： A semiconductor device including a transistor formed on a first surface of a silicon layer; a first insulating film formed on the first surface of said silicon layer and covering said transistor; a wiring section formed in the first insulating film and electrically connected to the transistor; a supporting substrate formed on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; and an adjusting insulating film for adjusting a threshold voltage of said transistor, the adjusting insulating film being formed on a second surface of said silicon layer opposing the first surface of said silicon layer. Some embodiments may include a probing electrode electrically connected to the transistor and an opening in the silicon layer for exposing the probing electrode.
摘要翻译：一种半导体器件，包括形成在硅层的第一表面上的晶体管; 形成在所述硅层的第一表面上并覆盖所述晶体管的第一绝缘膜; 形成在第一绝缘膜中并与晶体管电连接的布线部分; 支撑基板，形成在第一绝缘膜的表面上，第二绝缘膜介于支撑基板和第一绝缘膜之间; 以及用于调节所述晶体管的阈值电压的调整绝缘膜，所述调整绝缘膜形成在所述硅层的与所述硅层的第一表面相对的第二表面上。一些实施例可以包括电连接到晶体管的探测电极和用于暴露探测电极的硅层中的开口。

49. 发明授权

US08227317B2 Semiconductor device manufacturing method and semiconductor device 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08227317B2
公开(公告)日：2012-07-24
申请号：US12629150
申请日：2009-12-02
申请人： Hideaki Kuroda
发明人： Hideaki Kuroda
IPC分类号： H01L21/336
CPC分类号： H01L27/105 , H01L21/84 , H01L22/14 , H01L22/20 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L27/1203 , H01L29/78 , H01L29/7855
摘要： A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage.
摘要翻译：半导体器件制造方法包括以下步骤：在绝缘体上硅衬底的硅层的表面侧上形成晶体管，绝缘体上硅衬底通过层叠衬底，绝缘层和硅层; 形成覆盖晶体管的第一绝缘膜和包括与绝缘体上硅基板上的晶体管电连接的部分的布线部分; 通过所述布线部分测量所述晶体管的阈值电压; 在所述第一绝缘膜的表面上形成支撑衬底，其中所述第二绝缘膜置于所述支撑衬底和所述第一绝缘膜之间; 在绝缘体上硅衬底的背面去除衬底和绝缘层的至少一部分; 以及基于测量的阈值电压来调整晶体管的阈值电压。

50. 发明授权

US08129544B2 1-substituted-4-nitroimidazole compound and method for preparing the same 有权
标题翻译： 1-取代-4-硝基咪唑化合物及其制备方法
公开(公告)号：US08129544B2
公开(公告)日：2012-03-06
申请号：US11905446
申请日：2007-10-01
申请人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
发明人： Fumitaka Goto , Noriaki Takemura , Tadaaki Otani , Takeshi Hasegawa , Hidetsugu Tsubouchi , Naoto Utsumi , Shigekazu Fujita , Hideaki Kuroda , Takuya Shitsuta , Hirofumi Sasaki
IPC分类号： C07D407/06
CPC分类号： C07D233/92
摘要： The present invention relates to a 1-substituted-4-nitroimidazole compound represented by the general formula (1) or a salt thereof, (wherein R is a hydrogen atom, a lower alkoxy group-substituted lower alkyl group, a phenyl-lower alkoxy group-substituted lower alkyl group, a cyano-substituted lower alkyl group, a phenyl-lower alkyl group which may have lower alkoxy groups as the substituents in the phenyl ring or a group of the formula —CH2RA; X is a halogen atom or a group of the formula —S(O)n-R1) and method for preparing the same. The compound of the formula (1) is a useful compound as an intermediate for synthesis of various pharmaceutical and agricultural chemicals, particularly, as intermediates for antitubercular agents.
摘要翻译：本发明涉及由通式（1）表示的1-取代-4-硝基咪唑化合物或其盐（其中R是氢原子，低级烷氧基取代的低级烷基，苯基 - 低级烷氧基取代基的低级烷基，氰基取代的低级烷基，可以具有低级烷氧基作为苯环中的取代基的苯基 - 低级烷基或式-CH2RA的基团; X是卤素原子或基团-S（O）n -R1）及其制备方法。式（1）的化合物是用作合成各种药用和农药的中间体的有用化合物，特别是作为抗结核剂的中间体。

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