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    • 43. 发明授权
    • Wireless bicycle trip meter
    • 无线自行车旅行计
    • US06281674B1
    • 2001-08-28
    • US09352462
    • 1999-07-13
    • Chun-Mu Huang
    • Chun-Mu Huang
    • G01P354
    • B62J99/00B62J11/00B62J2099/0026B62J2099/0033G01C22/002G01P1/026G01P1/07
    • A trip meter includes a bracket secured to a member of a bicycle, a main body detachably secured to the bracket, a signal receiving circuit positioned in the main body for wirelessly receiving a pulse signal outputted from a transmitter, and a signal processing circuit electrically connected to the signal receiving circuit for counting a number and a frequency of the pulse signal and correspondingly generating an output signal indicative of the plurality of trip data. The trip meter further includes a display circuit electrically connected to the signal processing circuit for displaying the output signal generated from the signal processing circuit, a battery built in the main body for supplying a power to the signal receiving circuit, the signal processing circuit, and the display circuit, and a detector positioned in the main body for detecting a connective state of the main body and the bracket so that the signal receiving circuit is unable to wirelessly receive the pulse signal of the transmitter when the main body of the trip meter is detached from the bracket on the bicycle.
    • 行程表包括固定到自行车的构件的支架,可拆卸地固定到支架的主体,位于主体中的用于无线地接收从发送器输出的脉冲信号的信号接收电路,以及电连接的信号处理电路 到信号接收电路,用于对脉冲信号的数量和频率进行计数,并相应地产生指示多个跳闸数据的输出信号。 行程表还包括电连接到信号处理电路的显示电路,用于显示从信号处理电路产生的输出信号,内置在主体中用于向信号接收电路供电的电池,信号处理电路和 显示电路和位于主体中的检测器,用于检测主体和支架的连接状态,使得当跳闸计的主体为跳闸计时的信号接收电路不能无线地接收发射机的脉冲信号 与自行车上的支架分离。
    • 48. 发明授权
    • Novel etch back process for tungsten contact/via filling
    • 钨接触/通孔填充的新型回蚀工艺
    • US5035768A
    • 1991-07-30
    • US560988
    • 1990-07-30
    • Xiao-Chun MuJagir Multani
    • Xiao-Chun MuJagir Multani
    • C23F4/00H01L21/3213H01L21/768
    • C23F4/00H01L21/32136H01L21/7684
    • An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF.sub.6, O.sub.2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF.sub.6, Cl.sub.2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl.sub.2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.
    • 用于蚀刻形成在半导体衬底上的难熔金属层,具有大大降低的微负载效应的回蚀工艺。 蚀刻在三个步骤中进行。 第一步是使用SF6,O2和He的气体化学物质的均匀蚀刻,并且进行预定时间以去除大部分金属层。 第二步是使用SF6,Cl2和He的气体化学物质的非常均匀的蚀刻,并继续进行直到检测到端点。 通过测量和整合Cl的772nm和775nm线来检测终点。 第三步是利用Cl2和He的气体化学进行的定时蚀刻,其用作保护完全去除难熔金属膜的过滤材料,以及作为去除粘附底层的选择性蚀刻剂。