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    • 42. 发明授权
    • Process for making active interposer for high performance packaging applications
    • 制造高性能封装应用的主动插入器的工艺
    • US06461895B1
    • 2002-10-08
    • US09606871
    • 2000-06-29
    • Chunlin LiangLarry E. MosleyXiao Chun Mu
    • Chunlin LiangLarry E. MosleyXiao Chun Mu
    • H01L2144
    • H01L25/18G11C7/02H01L23/49827H01L23/5387H01L25/0657H01L2224/16225H01L2225/06517H01L2225/06524H01L2225/06527H01L2225/06541H01L2225/06572H01L2225/06586H01L2924/00014H01L2924/01078H01L2924/15174H01L2924/15311H01L2924/15312H01L2924/19106H01L2924/3025H05K1/185H05K3/4614H05K3/4623H01L2224/0401
    • An integrated circuit (IC) package process is provided that includes forming a first via hole in a first substrate. Patterning signal lines on a first surface and a second surface of the first substrate. Attaching a second substrate to the first surface of the first substrate. Electronically connecting a portion of the signal lines of the first substrate and the second substrate. Attaching an electrical element to the first surface of the first substrate. Forming a via hole in a third substrate. Introducing conductive material over a first surface and a second surface of the third substrate. Forming a second circuit pattern on the first surface and the second surface of the third substrate. Additionally, attaching the third substrate to the first substrate with a second layer of adhesive. In an alternative embodiment, a process includes forming a via hole in a first substrate. Introducing conductive material over a first surface and a second of the first substrate, wherein the introducing conductive material over the first surface and the second surface of the first substrate fills the via hole to form a via and a through hole. Forming a first circuit pattern on the first surface and the second surface of the first substrate. Forming solder pads on the first circuit pattern. Attaching a second substrate to the first substrate. Attaching an electrical element to the first substrate. Forming a via hole in a second substrate. Introducing conductive material over a first surface and a second of the second substrate. Forming a second circuit pattern on the first surface and the second surface of the second substrate, and attaching the first substrate to the second substrate.
    • 提供了一种集成电路(IC)封装工艺,其包括在第一衬底中形成第一通孔。 在第一基板的第一表面和第二表面上形成信号线。 将第二衬底附接到第一衬底的第一表面。 电连接第一基板和第二基板的信号线的一部分。 将电气元件附接到第一基板的第一表面。 在第三基板中形成通孔。 在第三基板的第一表面和第二表面上引入导电材料。 在第三基板的第一表面和第二表面上形成第二电路图案。 另外,用第二层粘合剂将第三衬底附接到第一衬底。 在替代实施例中,一种方法包括在第一衬底中形成通孔。 在第一衬底的第一表面和第二衬底上引入导电材料,其中在第一衬底的第一表面和第二表面上的引入导电材料填充通孔以形成通孔和通孔。 在第一基板的第一表面和第二表面上形成第一电路图案。 在第一个电路图案上形成焊盘。 将第二衬底附接到第一衬底。 将电气元件附接到第一基板。 在第二基板中形成通孔。 在第二基板的第一表面和第二基板上引入导电材料。 在第二基板的第一表面和第二表面上形成第二电路图案,并将第一基板附接到第二基板。
    • 44. 发明授权
    • Dart game controller that adjusts one score to effect other scores
    • Dart游戏控制器调整一个分数以实现其他分数
    • US5755443A
    • 1998-05-26
    • US677885
    • 1996-07-10
    • Chun-Mu Huang
    • Chun-Mu Huang
    • F41J3/00F41J5/14
    • F41J3/00
    • The present invention is related to a controller for controlling the proceeding of a dart game provided for a plurality of players. The controller is mounted in an electronic dartboard and includes a calculator for calculating and storing respective scores of the plurality of players; a comparator electrically connected to the calculator for comparing a newly calculated score of the respective player with each of the other scores stored in the calculator, and then generating an adjusting signal when any of the compared results shows a predetermined relationship; and an arbitrator electrically connected to the calculator and the comparator for adjusting concerned scores in response to the adjusting signal.
    • 本发明涉及一种用于控制为多个玩家提供的镖游戏的进行的控制器。 控制器安装在电子飞镖板中,并包括用于计算和存储多个玩家的各个分数的计算器; 电子连接到所述计算器的比较器,用于将存储在所述计算器中的每个所述其他得分的新计算得分进行比较,然后当所述比较结果中的任何一个显示预定关系时产生调整信号; 以及电连接到所述计算器和所述比较器的仲裁器,用于响应于所述调整信号调整相关分数。
    • 45. 发明授权
    • Methods of forming an interconnect on a semiconductor substrate
    • 在半导体衬底上形成互连的方法
    • US5612254A
    • 1997-03-18
    • US905473
    • 1992-06-29
    • Xiao-Chun MuSrinivasan SivaramDonald S. GardnerDavid B. Fraser
    • Xiao-Chun MuSrinivasan SivaramDonald S. GardnerDavid B. Fraser
    • H01L21/768H01L23/522H01L23/532H01L21/44
    • H01L21/76843H01L21/76801H01L21/76807H01L21/76877H01L23/5226H01L23/5329H01L2221/1036H01L2924/0002
    • A device and methods of forming an interconnection within a prepatterned channel in a semiconductor device are described. The present invention includes a method of forming an interconnect channel within a semiconductor device. A first dielectric layer is deposited over a substrate and patterned to form a contact opening that is subsequently filled with a contact plug. A second dielectric layer is deposited over the patterned first dielectric layer and the contact plug. The second dielectric layer is patterned to form the interconnect channel, wherein the first dielectric layer acts as an etch stop to prevent etching of the substrate. The present invention also includes a method of forming an interconnect. A dielectric layer is deposited over a substrate and patterned to form an interconnect chapel. A metal layer is deposited over the patterned dielectric layer and within the interconnect channel. The metal layer is polished with an alkaline solution to remove the metal layer that does not lie within the interconnect chapel to form an interconnect. The present invention further includes a method of forming an interconnect over a silicon nitride layer. The silicon nitride layer is deposited over a semiconductor substrate and patterned to form a contact opening that is subsequently filled with a conductive material. A metal layer is deposited on the patterned silicon nitride layer and the contact plug and patterned to form the interconnect such that all of the interconnect lies on the contact plug and part of the patterned silicon nitride layer.
    • 描述了在半导体器件中的预制图形通道内形成互连的装置和方法。 本发明包括在半导体器件内形成互连通道的方法。 第一电介质层沉积在衬底上并被图案化以形成随后用接触插塞填充的接触开口。 在图案化的第一介电层和接触插塞上沉积第二介电层。 图案化第二电介质层以形成互连通道,其中第一介电层用作蚀刻停止件以防止蚀刻基板。 本发明还包括形成互连的方法。 将电介质层沉积在衬底上并图案化以形成互连教堂。 金属层沉积在图案化的介电层上并且在互连通道内。 金属层用碱性溶液抛光以除去不在互连教堂内的金属层以形成互连。 本发明还包括在氮化硅层上形成互连的方法。 氮化硅层沉积在半导体衬底上并被图案化以形成随后用导电材料填充的接触开口。 金属层沉积在图案化的氮化硅层和接触插塞上,并被图案化以形成互连,使得所有互连都位于接触插塞和图案化的氮化硅层的一部分上。
    • 47. 发明授权
    • Intelligent security device
    • 智能安全设备
    • US5343524A
    • 1994-08-30
    • US718603
    • 1991-06-21
    • Xiao-Chun MuKai J. ChinFeiying Chen
    • Xiao-Chun MuKai J. ChinFeiying Chen
    • G06F21/00H04L9/04
    • G06F21/123G06F2221/2137
    • An intelligent security device (10) is disclosed for protecting computer software from unauthorized use. The security device (10) is a hardware device having within a microprocessor (36) for interacting with a host computer (32) such that protected software may not be operated unless the security device (10) is in place. Physical duplication of the security device (10) will not result in a workable copy, due to the nature of the microprocessor (36), which is such that information is encoded therein and further such that encryption codes are also stored therein and cannot be discovered after the microprocessor (36) is locked by any known means. A system clock (21) within the microprocessor (36) is adaptable to the purpose of permitting use of the protected software only within limited time parameters.
    • 公开了一种用于保护计算机软件免于未经授权的使用的智能安全装置(10)。 安全装置(10)是具有在微处理器(36)内的用于与主计算机(32)进行交互的硬件装置,使得受保护的软件可能不被操作,除非安全装置(10)就位。 由于微处理器(36)的性质,安全设备(10)的物理复制将不会导致可工作的复制,这就使得信息被编码在其中并且进一步使得加密代码也被存储在其中并且不能被发现 在微处理器(36)被任何已知的方式锁定之后。 微处理器(36)内的系统时钟(21)适用于仅在有限的时间参数内允许使用受保护的软件的目的。