专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08556273B2 Vehicle suspension device 有权
标题翻译：车辆悬挂装置
公开(公告)号：US08556273B2
公开(公告)日：2013-10-15
申请号：US13698503
申请日：2010-05-19
申请人： Atsushi Ogawa
发明人： Atsushi Ogawa
IPC分类号： B60G17/015
CPC分类号： B60G17/0157 , B60G13/02 , B60G17/06 , B60G2202/20 , F16F15/03
摘要： Four electromagnetic shock absorbers (30) are provided with motors (40FL, 40FR, 40RL, 40RR). First current-carrying terminals (T1) of the motors (40FL, 40FR, 40RL, 40RR) are connected to one another by a ground line (61). Further, second current-carrying terminals (T2) of the motor (40FL) and the motor (40FR) are connected to each other by a front wheel roll damping line (62F). Second current-carrying terminals (T2) of the motor (40RL) and the motor (40RR) are connected to each other by a rear wheel roll damping line (62R). Second current-carrying terminals (T2) of the motor (40FL) and the motor (40RL) are connected to each other by a left wheel pitch damping line (63L). Second current-carrying terminals (T2) of the motor (40FR) and the motor (40RR) are connected to each other by a right wheel pitch damping line (63R). In this manner, appropriate damping forces can be generated with a simple configuration not only against vehicle bouncing but also against vehicle rolling and pitching.
摘要翻译：四个电磁减震器（30）设有电动机（40FL，40FR，40RL，40RR）。电动机（40FL，40FR，40RL，40RR）的第一通电端子（T1）通过接地线（61）彼此连接。此外，电动机（40FL）和电动机（40FR）的第二通电端子（T2）通过前轮滚动阻尼线（62F）彼此连接。电动机（40RL）和电动机（40RR）的第二通电端子（T2）通过后轮侧滚动阻尼线（62R）彼此连接。电动机（40FL）和电动机（40RL）的第二通电端子（T2）通过左车轮节距阻尼线（63L）彼此连接。电动机（40FR）和电动机（40RR）的第二通电端子（T2）通过右轮节距阻尼线（63R）彼此连接。以这种方式，可以以简单的构造产生适当的阻尼力，不仅可以防止车辆弹跳，而且可以抵抗车辆滚动和俯仰。

42. 发明授权

US08485593B2 Drain plug 有权
标题翻译：排水塞
公开(公告)号：US08485593B2
公开(公告)日：2013-07-16
申请号：US12923748
申请日：2010-10-06
申请人： Atsushi Ogawa , Tomoki Yamaguchi , Hajime Saito , Toshiya Ohba
发明人： Atsushi Ogawa , Tomoki Yamaguchi , Hajime Saito , Toshiya Ohba
IPC分类号： B65D39/04
CPC分类号： B62D25/24
摘要： A drain plug includes a head part arranged on a peripheral edge of a drain hole from a front side, and an engaging leg engaged with the peripheral edge of the drain hole from a back side. The engaging leg includes a frame wall extending in a direction in which a space between a pair of panels forming a body panel is widened; an opening part facing the a connecting part of the pair of panels of the body panel; engaging parts formed on both side walls of the frame wall, to be engaged with the peripheral edge of the drain hole from the back side; and a guide surface formed on a front wall of the frame wall, to guide the engaging parts to pass through the drain hole.
摘要翻译：排水塞包括从前侧布置在排水孔的周缘上的头部，以及从后侧与排水孔的周边边缘接合的接合腿。所述接合腿包括框架壁，所述框架壁沿着形成所述主体面板的一对面板之间的空间变宽的方向延伸; 面向所述主体板的所述一对面板的连接部的开口部; 形成在框架壁的两个侧壁上的接合部分将从后侧与排水孔的周边接合; 以及形成在框架壁的前壁上的引导表面，以引导接合部分通过排水孔。

43. 发明申请

US20110174288A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 审中-公开
标题翻译：氮化物半导体激光光源的制造方法以及氮化物半导体激光光源的制造装置
公开(公告)号：US20110174288A1
公开(公告)日：2011-07-21
申请号：US13064534
申请日：2011-03-30
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： F24B1/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

44. 发明授权

US07939433B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
公开(公告)号：US07939433B2
公开(公告)日：2011-05-10
申请号：US12656758
申请日：2010-02-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/20
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

45. 发明申请

US20110077402A1 ADMINISTRATION OF DIPEPTIDYL PEPTIDASE INHIBITORS 审中-公开
标题翻译： DIPEPTIDYL PEPTIDASE抑制剂的施用
公开(公告)号：US20110077402A1
公开(公告)日：2011-03-31
申请号：US12965448
申请日：2010-12-10
申请人： Ronald J. Christopher , Paul Covington , Atsushi Ogawa
发明人： Ronald J. Christopher , Paul Covington , Atsushi Ogawa
IPC分类号： C07D401/04 , A61K31/506 , A61P35/00 , A61P37/00 , A61P31/18 , A61P3/10
CPC分类号： C07D401/04 , A61K31/4439 , A61K31/513 , A61K45/06 , A61K2300/00
摘要： Pharmaceutical compositions comprising 2-[6-(3-Amino-piperidin-1-yl)-3-methyl-2,4-dioxo-3,4-dihydro-2H-pyrimidin-1-ylmethyl]-4-fluoro-benzonitrile and pharmaceutically acceptable salts thereof are provided as well as kits and articles of manufacture comprising the pharmaceutical compositions as well as methods of using the pharmaceutical compositions.
摘要翻译：包含2- [6-（3-氨基 - 哌啶-1-基）-3-甲基-2,4-二氧代-3,4-二氢-2H-嘧啶-1-基甲基] -4-氟 - 苄腈的药物组合物提供其药学上可接受的盐以及包含药物组合物的试剂盒和制品以及使用该药物组合物的方法。

46. 发明授权

US07893446B2 Nitride semiconductor light-emitting device providing efficient light extraction 有权
标题翻译：氮化物半导体发光器件提供高效的光提取
公开(公告)号：US07893446B2
公开(公告)日：2011-02-22
申请号：US12022066
申请日：2008-01-29
申请人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
发明人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/14 , H01L33/32
摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.
摘要翻译：氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层，具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。金属层优选由储氢合金制成。

47. 发明授权

US07833834B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US07833834B2
公开(公告)日：2010-11-16
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

48. 发明授权

US07663158B2 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07663158B2
公开(公告)日：2010-02-16
申请号：US11941333
申请日：2007-11-16
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体多层结构，其中所述半导体多层结构包括：含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

49. 发明申请

US20090227899A1 Medical Wire 有权
标题翻译：医用线
公开(公告)号：US20090227899A1
公开(公告)日：2009-09-10
申请号：US11577086
申请日：2005-10-27
申请人： Jiro Ishida , Hironori Takata , Atsushi Ogawa
发明人： Jiro Ishida , Hironori Takata , Atsushi Ogawa
IPC分类号： A61M25/09 , A61B17/00
CPC分类号： A61B17/12022 , A61B17/12145 , A61B2017/00292 , A61B2017/00477 , A61B2017/12068 , A61M25/0017 , A61M25/0045 , A61M2025/0042
摘要： Disclosed herein is a medical wire with an intracorporeally indwelling member connected to the leading end part of a conductive wire body through a thermally-fusible connecting member, wherein expected heat generation can be achieved even when a conductive member that causes leak comes into contact with the leading end part of the conductive wire body, and thus the intracorporeally indwelling member can be surely released.This medical wire comprises a conductive wire body and an intracorporeally indwelling member connected to the leading end part of the conductive wire body through a thermally-fusible connecting member, in which the connecting member is heated and fused by supplying an electric current for fusion through the conductive wire body, thereby releasing the intracorporeally indwelling member, wherein a non-conductive coating film is formed on an external peripheral surface of an electrode-forming portion in the leading end part of the wire body, and a part of the surface of the wire body is exposed through the coating film, thereby forming a heating electrode portion.
摘要翻译：这里公开了一种具有体内留置构件的医用线，其通过热熔连接构件连接到导线本体的前端部，其中即使当导致泄漏的导电构件与导电线体的前端部，能够确实地释放体内留置部件。该医用线包括导体线体和体内留置部件，其通过热熔连接部件与导线本体的前端部连接，在该部件中，连接部件通过供给融合用电流而被加热熔化导电线体，从而释放体内留置部件，其中在导线主体的前端部分的电极形成部分的外周面上形成非导电涂膜，并且线的表面的一部分主体通过涂膜曝光，从而形成加热电极部分。

50. 发明申请

US20070290224A1 Method of manufacturing nitride semiconductor light-emitting element and nitride semiconductor light-emitting element 审中-公开
标题翻译：制造氮化物半导体发光元件和氮化物半导体发光元件的方法
公开(公告)号：US20070290224A1
公开(公告)日：2007-12-20
申请号：US11808220
申请日：2007-06-07
申请人： Atsushi Ogawa
发明人： Atsushi Ogawa
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： There are provided a method of manufacturing a nitride semiconductor light-emitting element in which a nitride semiconductor layer of a first conductivity type, an active layer, and a nitride semiconductor layer of a second conductivity type are stacked in this order, including the steps of forming unevenness at a surface of the nitride semiconductor layer of the first conductivity type, forming unevenness at a surface of the nitride semiconductor layer of the second conductivity type, and forming a first electrode on a side of the nitride semiconductor layer of the first conductivity type and a second electrode on a side of the nitride semiconductor layer of the second conductivity type such that the first and second electrodes are positioned to face each other with the active layer interposed therebetween, and the nitride semiconductor light-emitting element.
摘要翻译：提供了一种制造氮化物半导体发光元件的方法，其中依次堆叠第一导电类型，有源层和第二导电类型的氮化物半导体层的氮化物半导体层，其包括以下步骤：在第一导电类型的氮化物半导体层的表面形成凹凸，在第二导电类型的氮化物半导体层的表面形成凹凸，以及在第一导电类型的氮化物半导体层的一侧上形成第一电极以及在所述第二导电类型的所述氮化物半导体层的一侧上的第二电极，使得所述第一电极和所述第二电极相对于所述有源层彼此面对，并且所述氮化物半导体发光元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式