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41. 发明授权

US07182809B2 Nitrogen-doped silicon substantially free of oxidation induced stacking faults 失效
标题翻译：基本上不含氧化诱导的堆垛层错的氮掺杂硅
公开(公告)号：US07182809B2
公开(公告)日：2007-02-27
申请号：US10380806
申请日：2001-08-30
申请人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
发明人： Hiroyo Haga , Takaaki Aoshima , Mohsen Banan
IPC分类号： C30B15/04
CPC分类号： C30B15/203 , C30B15/206 , C30B29/06
摘要： A single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.
摘要翻译：包含其中空位是主要固有点缺陷的轴对称区域的单晶硅，晶锭或晶片形式基本上没有氧化诱导的堆垛层错，并且是氮掺杂以稳定氧析出核的方法，的制备。

42. 发明授权

US07008308B2 Wafer carrier 失效
标题翻译：晶圆载体
公开(公告)号：US07008308B2
公开(公告)日：2006-03-07
申请号：US10442900
申请日：2003-05-20
申请人： Mick Bjelopavlic , Alexis Grabbe , Michele Haler , Tracy M. Ragan
发明人： Mick Bjelopavlic , Alexis Grabbe , Michele Haler , Tracy M. Ragan
IPC分类号： B24B29/00
CPC分类号： B24B37/28
摘要： A wafer carrier for retaining at least one semiconductor wafer in a processing apparatus during a processing operation which removes wafer material by at least one of abrading and chemical reaction. The processing apparatus is adapted for removing wafer material from a front side and a back side of each wafer simultaneously. The carrier includes a plate including wafer contaminating material and having an opening and a thickness. An insert has a thickness and is disposed in the opening for receiving at least one wafer and engaging a peripheral edge of the wafer to hold the wafer as the carrier rotates. The thickness of the insert is significantly greater than the thickness of the plate to inhibit removal of material from the plate and thereby inhibit bulk metal contamination of the wafer.
摘要翻译：一种用于在处理操作期间将至少一个半导体晶片保持在处理装置中的晶片载体，其通过研磨和化学反应中的至少一种去除晶片材料。处理装置适用于同时从每个晶片的前侧和后侧去除晶片材料。载体包括包括晶片污染材料并具有开口和厚度的板。插入件具有厚度并且设置在开口中，用于接收至少一个晶片并与晶片的周边边缘接合以在托架旋转时保持晶片。插入件的厚度显着大于板的厚度，以阻止材料从板上移除，从而抑制晶片的大量金属污染。

43. 发明申请

US20050279277A1 Systems and methods for measuring and reducing dust in granular material 有权
标题翻译：用于测量和减少颗粒材料中灰尘的系统和方法
公开(公告)号：US20050279277A1
公开(公告)日：2005-12-22
申请号：US10930654
申请日：2004-08-31
申请人： John Holder , Hariprasad Sreedharamurthy , John Hilker
发明人： John Holder , Hariprasad Sreedharamurthy , John Hilker
IPC分类号： C01B33/027 , C30B15/00 , C30B21/06 , C30B30/04
CPC分类号： B07B4/04 , C01B33/027 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a baffle tube for receiving a polysilicon flow. A measuring system includes a manifold and filter for separating and measuring the dust from a flow of polysilicon. The invention is also directed to methods of using the systems, to methods of manufacturing and packaging granular polysilicon, and to a supply of granular polysilicon.
摘要翻译：本发明涉及用于测量和减少颗粒状多晶硅中的粉尘的装置和方法。一方面，系统包括具有用于从多晶硅拉出灰尘的真空端口的处理容器。本发明的另一个系统包括用于接收多晶硅流的挡板管。测量系统包括用于分离和测量多晶硅流中的灰尘的歧管和过滤器。本发明还涉及使用该系统，制造和包装颗粒状多晶硅的方法以及颗粒状多晶硅供应的方法。

44. 发明申请

US20050255671A1 Process for producing silicon on insulator structure having intrinsic gettering by ion implantation 失效
标题翻译：通过离子注入产生具有固有吸气性的绝缘体上硅结构的方法
公开(公告)号：US20050255671A1
公开(公告)日：2005-11-17
申请号：US11174908
申请日：2005-07-05
申请人： Robert Falster , Jeffrey Libbert
发明人： Robert Falster , Jeffrey Libbert
IPC分类号： H01L21/02 , H01L21/322 , H01L21/76 , H01L21/762 , H01L27/12 , H01L21/30
CPC分类号： H01L21/3226 , H01L21/76243
摘要： The present invention is directed to a process for producing a silicon on insulator (SOI) structure having intrinsic gettering, wherein a silicon substrate is subjected to an ideal precipitating wafer heat treatment which enables the substrate, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process to form an ideal, non-uniform depth distribution of oxygen precipitates, and wherein a dielectric layer is formed beneath the surface of the wafer by implanting oxygen or nitrogen ions, or molecular oxygen, beneath the surface and annealing the wafer. Additionally, the silicon wafer may initially include an epitaxial layer, or an epitaxial layer may be deposited on the substrate during the process of the present invention.
摘要翻译：本发明涉及一种制造具有固有吸气性的绝缘体上硅（SOI）结构的方法，其中硅衬底经受理想的沉淀晶片热处理，其使基板在基本上任意任意的电子以形成氧沉淀物的理想的，不均匀的深度分布，并且其中通过在表面下方注入氧或氮离子或分子氧并且退火晶片，在晶片的表面下方形成电介质层。另外，硅晶片可以最初包括外延层，或者在本发明的工艺期间，可以在衬底上沉积外延层。

45. 发明授权

US06913647B2 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon 有权
标题翻译：用于冷却具有空位主导区域的硅锭的方法以产生无缺陷的硅
公开(公告)号：US06913647B2
公开(公告)日：2005-07-05
申请号：US10437141
申请日：2003-05-13
申请人： Robert J. Falster , Harold W. Korb
发明人： Robert J. Falster , Harold W. Korb
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/00
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B33/00 , Y10T117/1032 , Y10T117/106 , Y10T117/1072
摘要： A process for producing silicon which is substantially free of agglomerated intrinsic point defects in an ingot having a vacancy dominated region. An ingot is grown generally in accordance with the Czochralski method. While intrinsic point defects diffuse from or are annihilated within the ingot, at least a portion of the ingot is maintained above a temperature TA at which intrinsic point defects agglomerate. The achievement of defect free silicon is thus substantially decoupled from process parameters, such as pull rate, and system parameters, such as axial temperature gradient in the ingot.
摘要翻译：一种在具有空位主导区域的锭中基本上没有附聚固有点缺陷的硅的制造方法。锭通常根据Czochralski法生长。虽然本征点缺陷从锭内扩散或被湮灭，但是锭的至少一部分保持在内部点缺陷聚集的温度T A A以上。因此，无缺陷硅的实现基本上与工艺参数（例如拉速率）和系统参数（例如锭中的轴向温度梯度）分离。

46. 发明授权

US06849901B2 Device layer of a silicon-on-insulator structure having vacancy dominated and substantially free of agglomerated vacancy-type defects 有权
标题翻译：绝缘体上硅结构，其具有以空位为主并且基本上没有附聚的空位缺陷的器件层
公开(公告)号：US06849901B2
公开(公告)日：2005-02-01
申请号：US10038084
申请日：2002-01-03
申请人： Robert J. Falster
发明人： Robert J. Falster
IPC分类号： C30B15/00 , H01L21/02 , H01L21/322 , H01L21/762 , H01L27/12 , C30B33/06
CPC分类号： C30B15/203 , C30B15/206 , C30B29/06 , H01L21/3225 , H01L21/3226 , H01L21/7624 , H01L21/76251 , Y10S257/913 , Y10T428/21
摘要： The present invention relates to a process for the preparation of a silicon on insulator wafer. The process includes implanting oxygen into a single crystal silicon wafer which is substantially free of agglomerated vacancy-type defects. The present invention further relates to a process for the preparation of a silicon on insulator wafer wherein oxygen is implanted into a single crystal silicon wafer having an axially symmetric region in which there is a predominant intrinsic point defect which is substantially free of agglomerated intrinsic point defects. Additionally, the present invention relates to a silicon on insulator (“SOI”) structure in which the device layer and the handle wafer each have an axially symmetric region which is substantially free of agglomerated intrinsic point defects. Additionally, the present invention is directed to such SOI structure in which the handle wafer is capable of forming an ideal, non-uniform depth distribution of oxygen precipitates upon being subjected to the heat treatment cycles of essentially any arbitrary electronic device manufacturing process.
摘要翻译：本发明涉及一种制备绝缘体上硅晶片的方法。该方法包括将氧气注入到基本上没有附聚空位型缺陷的单晶硅晶片中。本发明还涉及一种用于制备绝缘体上硅晶片的方法，其中将氧注入到具有轴向对称区域的单晶硅晶片中，其中存在基本上没有附聚固有点缺陷的主要固有点缺陷。另外，本发明涉及绝缘体上硅（SOI）结构，其中器件层和处理晶片各自具有基本上没有附聚的固有点缺陷的轴对称区域。此外，本发明涉及这样的SOI结构，其中处理晶片能够在经受基本上任意的任何电子器件制造工艺的热处理循环时形成氧沉淀物的理想的，不均匀的深度分布。

47. 发明申请

US20050005841A1 Process for preparing a stabilized ideal oxygen precipitating silicon wafer 有权
公开(公告)号：US20050005841A1
公开(公告)日：2005-01-13
申请号：US10615127
申请日：2003-07-08
申请人： Robert Falster , Vladimir Voronkov
发明人： Robert Falster , Vladimir Voronkov
IPC分类号： C30B33/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B33/00
摘要： The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of stabilized oxygen precipitate nucleation centers therein. Specifically, the peak concentration is located in the wafer bulk and a precipitate-free zone extends inward from a surface.

48. 发明申请

US20040235402A1 Wafer carrier 失效
标题翻译：晶圆载体
公开(公告)号：US20040235402A1
公开(公告)日：2004-11-25
申请号：US10442900
申请日：2003-05-20
申请人： MEMC Electronic Materials, Inc.
发明人： Mick Bjelopavlic , Alexis Grabbe , Michele Haler , Tracy M. Ragan
IPC分类号： B24B007/00
CPC分类号： B24B37/28
摘要： A wafer carrier for retaining at least one semiconductor wafer in a processing apparatus during a processing operation which removes wafer material by at least one of abrading and chemical reaction. The processing apparatus is adapted for removing wafer material from a front side and a back side of each wafer simultaneously. The carrier includes a plate including wafer contaminating material and having an opening and a thickness. An insert has a thickness and is disposed in the opening for receiving at least one wafer and engaging a peripheral edge of the wafer to hold the wafer as the carrier rotates. The thickness of the insert is significantly greater than the thickness of the plate to inhibit removal of material from the plate and thereby inhibit bulk metal contamination of the wafer.
摘要翻译：一种用于在处理操作期间将至少一个半导体晶片保持在处理装置中的晶片载体，其通过研磨和化学反应中的至少一种去除晶片材料。处理装置适用于同时从每个晶片的前侧和后侧去除晶片材料。载体包括包括晶片污染材料并具有开口和厚度的板。插入件具有厚度并且设置在开口中，用于接收至少一个晶片并与晶片的周边边缘接合以在托架旋转时保持晶片。插入件的厚度显着大于板的厚度，以阻止材料从板上移除，从而抑制晶片的大量金属污染。

49. 发明申请

US20040118333A1 Process for preparing single crystal silicon using crucible rotation to control temperature gradient 有权
标题翻译：使用坩埚旋转制备单晶硅以控制温度梯度的方法
公开(公告)号：US20040118333A1
公开(公告)日：2004-06-24
申请号：US10699038
申请日：2003-10-31
申请人： MEMC Electronic Materials, Inc.
发明人： Zheng Lu , Steven L. Kimbel , Ying Tao
IPC分类号： C30B015/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , C30B15/30 , Y10T117/1072 , Y10T117/1076
摘要： The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.
摘要翻译：本发明涉及一种以锭或晶片形式制备单晶硅的方法，其中坩埚旋转用于控制晶体中的平均轴向温度梯度G0作为半径的函数（即，G0（r）），特别是在中心轴线处或附近。此外，利用坩埚旋转调制来获得其中的轴向均匀的氧含量。

50. 发明申请

US20040070012A1 Low defect density silicon 审中-公开
标题翻译：低缺陷密度硅
公开(公告)号：US20040070012A1
公开(公告)日：2004-04-15
申请号：US10639737
申请日：2003-08-12
申请人： MEMC Electronic Materials, Inc.
发明人： Robert J. Falster , Joseph C. Holzer
IPC分类号： H01L029/76
CPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/203 , C30B15/206 , C30B33/00 , H01L21/3225 , Y10T117/1004 , Y10T428/21
摘要： The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region which is free of agglomerated intrinsic point defects, and a process for the preparation thereof. The process comprises controlling growth conditions, such as growth velocity, v, instantaneous axial temperature gradient, G0, and the cooling rate, within a range of temperatures at which silicon self-interstitials are mobile, in order to prevent the formation of these agglomerated defects. In ingot form, the axially symmetric region has a width, as measured from the circumferential edge of the ingot radially toward the central axis, which is at least about 30% the length of the radius of the ingot. The axially symmetric region additionally has a length, as measured along the central axis, which is at least about 20% the length of the constant diameter portion of the ingot.
摘要翻译：本发明涉及晶锭或晶片形式的单晶硅，其包含不具有附聚固有点缺陷的轴对称区域及其制备方法。该过程包括在硅自填隙可移动的温度范围内控制生长条件，例如生长速度，v，瞬时轴向温度梯度G0和冷却速率，以防止这些团聚缺陷的形成。在锭状形式中，轴向对称区域具有从铸块径向向中心轴线的圆周边缘测量的宽度，其至少为铸块半径的大约30％。轴向对称区域还具有沿着中心轴测量的长度，该长度至少为锭的恒定直径部分的长度的约20％。

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