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    • 31. 发明授权
    • Field emission cathode and a light source including a field emission
cathode
    • 场发射阴极和包括场致发射阴极的光源
    • US5877588A
    • 1999-03-02
    • US904652
    • 1997-08-01
    • Vitaly Sergeevich KaftanovAlexander Leonidovich SuvorovEvgenij Pavlovich SheshinJan Olsfors
    • Vitaly Sergeevich KaftanovAlexander Leonidovich SuvorovEvgenij Pavlovich SheshinJan Olsfors
    • H01J1/304H01J63/02H01J63/04H01J1/30H01J19/24
    • H01J63/04H01J1/304
    • A field emission cathode (40) includes field emitting bodies (42) in the form of fibers, and a base body having a longitudinally extending core (41) formed by at least two wires (43) between which the fibers are secured. The fibers are distributed along at least a part of the length of the core (41) and extend radially outwards from the core. A light source (10) includes an evacuated container having walls at least a portion of which consists of an outer glass layer (23) on which at least a major part thereof is coated on the inside with a layer of phosphor (24) forming a luminescent layer, and a conductive layer forming an anode (25). The layer of phosphor (24) is excited to luminescence by electron bombardment from a field emission cathode (40) located in the interior of the container, and a modulator electrode or grid (30) is arranged between the cathode (40) and the anode (25) for creating an electric field for the emission of electrons. The field emission cathode (40) includes field emitting bodies (42) in the form of fibers, and a base body having a longitudinally extending core (41) formed by at least two wires (43) between which the fibers are secured.
    • 场发射阴极(40)包括纤维形式的场发射体(42)和具有由至少两根电线(43)形成的纵向延伸的芯体(41)的基体,在该基体之间固定有光纤。 纤维沿着芯(41)的长度的至少一部分分布并且从芯径向向外延伸。 光源(10)包括抽真空容器,其具有至少一部分壁的外壁玻璃层(23),所述外玻璃层(23)的至少大部分在其上至少涂覆有一层形成 发光层和形成阳极(25)的导电层。 通过从位于容器内部的场致发射阴极(40)进行电子轰击将磷光体层(24)激发为发光,并且在阴极(40)和阳极(40)之间设置调制器电极或栅格 (25),用于产生用于发射电子的电场。 场致发射阴极(40)包括纤维形式的场发射体(42)和具有由至少两根电线(43)形成的纵向延伸的芯体(41)的基体,纤维固定在该基体之间。
    • 33. 发明授权
    • Plasma-addressed display panel and a method of manufacturing the same
    • 等离子体寻址显示面板及其制造方法
    • US5800232A
    • 1998-09-01
    • US940977
    • 1997-09-30
    • Shigeki Miyazaki
    • Shigeki Miyazaki
    • G02F1/1333G02F1/133G02F1/1343G09F9/313H01J17/48H01J19/24
    • G02F1/13334H01J17/485
    • To improve the durability of discharge electrodes formed in a plasma cell and achieve fine detail, a plasma-addressed display device is provided having a laminated structure with a display cell 1 provided with column-arranged, stripe-shaped signal electrodes 5, a plasma cell 2 provided with row-arranged, stripe-shaped discharge electrodes 9, and a dielectric sheet 3 sandwiched in between the display cell 1 and the plasma cell 2. The portions where the signal electrodes 5 and the discharge electrodes 9 intersect define pixels. The plasma cell 2 includes an insulating substrate 8 bonded to the dielectric sheet 3 with a gap therebetween to form a cell and a gas that ionizes when a voltage is applied to the discharge electrodes 9 sealed in the cell. The discharge electrodes 9 are constituted by electrically conductive material embedded into grooves 13 dug in rows into the insulating substrate
    • 为了提高在等离子体单元中形成的放电电极的耐久性并且实现细节,提供了具有叠层结构的等离子体寻址显示装置,显示单元1设置有列排列的条形信号电极5,等离子体单元 设置有行排列的条状放电电极9和夹在显示单元1和等离子体单元2之间的电介质片3.信号电极5和放电电极9相交的部分定义像素。 等离子体单元2包括绝缘基板8,该绝缘基板8在电介质片3之间具有间隙而形成电池,并且在对密封在电池中的放电电极9施加电压时电离的气体。 放电电极9由嵌入到排列成绝缘基板的槽13中的导电材料构成
    • 34. 发明授权
    • Gated field-emitters with integrated planar lenses
    • 具有集成平面透镜的门控场发射器
    • US5793152A
    • 1998-08-11
    • US161667
    • 1993-12-03
    • Cha-Mei TangThomas A. Swyden
    • Cha-Mei TangThomas A. Swyden
    • H01J3/02H01J19/24
    • H01J3/022
    • The present invention is a device for producing collimated electron beams. The device comprises a gated field emission array having at least one emission tip and a grid electrode having a grid opening disposed above the emission tip in a first direction. The device also comprises an integrated planar lens electrode for producing a focusing effect on electron beams emitted by the emission tip. The planar lens electrode has a lens edge disposed aside at a distance from the grid opening in a second direction perpendicular to the first direction. Preferably, the planar lens electrode is an integrated layer with the gated field emission array on a substrate. The grid electrode and the lens electrode can be on the same layer and separated by a gap of vacuum. The planar lens electrode can be above the grid electrode, separated by an insulative material. Similarly, the planar lens electrode can be below the grid electrode, and separated by an insulator material. Sometimes, the base electrode on which the tips are formed can act as a lens.
    • 本发明是一种用于产生准直电子束的装置。 该装置包括具有至少一个发射尖端的栅控场发射阵列和在第一方向上布置在发射尖端上方的格栅的栅格电极。 该装置还包括用于产生对由发射尖端发射的电子束的聚焦效果的集成平面透镜电极。 平面透镜电极具有在垂直于第一方向的第二方向上与栅格开口一定距离的透镜边缘。 优选地,平面透镜电极是在基板上具有门控场致发射阵列的集成层。 栅格电极和透镜电极可以在同一层上,并通过真空间隙分离。 平面透镜电极可以在栅电极之上,由绝缘材料隔开。 类似地,平面透镜电极可以在栅电极之下,并被绝缘体材料分隔开。 有时,其上形成尖端的基极可以用作透镜。
    • 37. 发明授权
    • Field emission display cell structure
    • 场发射显示单元结构
    • US5644188A
    • 1997-07-01
    • US438023
    • 1995-05-08
    • Michael D. Potter
    • Michael D. Potter
    • H01J3/02H01J9/02H01J21/04H01J21/10H01J31/12H01J1/16H01J19/24
    • H01J21/04H01J21/105H01J3/022H01J31/127H01J9/025
    • A lateral-emitter field emission device has a thin-film emitter cathode 50 which has thickness of not more than several hundred angstroms and has an edge or tip 110 having a small radius of curvature. To form a novel display cell structure, a cathodoluminescent phosphor anode 60 is positioned below the plane of the thin-film lateral-emitter cathode 50, allowing a large portion of the phosphor anode's top surface to emit light in the desired direction. An anode contact layer contacts the phosphor anode 60 from below to form a buried anode contact 90 which does not interfere with light emission. The anode phosphor is precisely spaced apart from the cathode edge or tip and receives electrons emitted by field emission from the edge or tip of the lateral-emitter cathode, when a small bias voltage is applied. The device may be configured as a diode, triode, or tetrode, etc. having one or more control electrodes 140 and/or 170 positioned to allow control of current from the emitter to the phosphor anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode 140 is positioned in a plane below the emitter edge or tip 110 and automatically aligned to that edge. The display cell structure may be repeated many times in an array, and the display cell structure of the invention lends itself to novel array structures which are also disclosed.
    • 横向发射极场发射器件具有薄膜发射极阴极50,薄膜发射极阴极50具有不超过几百埃的厚度,并具有具有小曲率半径的边缘或尖端110。 为了形成新颖的显示单元结构,阴极发光磷光体阳极60位于薄膜侧向发射极阴极50的平面的下方,允许荧光体阳极的顶表面的大部分在期望的方向上发光。 阳极接触层从下方接触荧光体阳极60,以形成不干扰光发射的掩埋阳极接触90。 当施加小的偏置电压时,阳极磷光体与阴极边缘或尖端精确地间隔开并且接收从侧向发射极阴极的边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极140和/或170的二极管,三极管或四极管等,其被定位成允许通过施加到控制电极的电信号来控制从发射极到磷光体阳极的电流。 在特别简单的实施例中,单个控制电极140定位在发射器边缘或尖端110下方的平面中并自动对准该边缘。 显示单元结构可以在阵列中重复多次,并且本发明的显示单元结构本身也被公开了新颖的阵列结构。
    • 39. 发明授权
    • Method for producing silicon tip field emitter arrays
    • 硅尖端场发射极阵列的制造方法
    • US5458518A
    • 1995-10-17
    • US335500
    • 1994-11-07
    • Jong D. Lee
    • Jong D. Lee
    • H01J21/10G03F7/00H01J1/304H01J9/02H01J19/24H01J31/12H01J1/30
    • H01J9/025
    • The present invention provides for a method for manufacturing a field emitter array comprising the steps of depositing a silicon nitride mask pattern layer on the silicon substrate, forming a porous silicon layer in the substrate except in parts under the nitride mask patterns and oxidizing the porous silicon layer and the silicon substrate under the silicon layer, which results in formation of cone shape cathode tips. Further, gates corresponding to said cathode tips are provided by the conventional process or by process of depositing thin metal film and photoresist on the mask patterns and the porous silicon layer, etching the photoresist layer on the patterns, and then etching the metal film on the patterns, or by lift-off process.
    • 本发明提供了一种用于制造场致发射阵列的方法,包括以下步骤:在硅衬底上沉积氮化硅掩模图案层,在衬底之外形成多孔硅层,除了氮化物掩模图案之下的部分,并氧化多孔硅 层和硅衬底下的硅层,从而形成锥形阴极尖端。 此外,通过常规方法或通过在掩模图案和多孔硅层上沉积薄金属膜和光致抗蚀剂,在图案上蚀刻光致抗蚀剂层,然后在其上蚀刻金属膜的工艺来提供对应于所述阴极尖端的栅极 模式,或通过剥离过程。