专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US11879623B1 Lighting device using combined power generation 有权
公开(公告)号：US11879623B1
公开(公告)日：2024-01-23
申请号：US18302994
申请日：2023-04-19
申请人： Ok Ja Jeon , Seung Won Seo , Xue Bin Yin , Yoon Ju Kook , Bong Hyoung Kim
发明人： Ok Ja Jeon , Seung Won Seo , Xue Bin Yin , Yoon Ju Kook , Bong Hyoung Kim
IPC分类号： H02S10/30 , F21V23/02 , F21S9/03 , F03D9/00 , H10N19/00 , H01L25/075
CPC分类号： F21V23/02 , F03D9/007 , F21S9/03 , H02S10/30 , H10N19/00 , F05B2220/708 , H01L25/0753
摘要： Proposed is a lighting device using combined power generation. Particularly, the lighting device using combined power generation includes a first power generation part including a first thermoelectric element whose first surface has a high temperature part formed by solar heat, the first power generation part being configured to generate electrical energy by using the first thermoelectric element, a second power generation part including a second thermoelectric element whose first surface has a high temperature part formed by heat generated from an LED module, the second power generation part being configured to generate electrical energy by using the second thermoelectric element, and a cooling part that is provided between the first power generation part and the second power generation part and simultaneously cools a second surface of each of the first thermoelectric element and the second thermoelectric element.

32. 发明授权

US11694942B2 Annular silicon-embedded thermoelectric cooling devices for localized on-die thermal management 有权
公开(公告)号：US11694942B2
公开(公告)日：2023-07-04
申请号：US16168534
申请日：2018-10-23
申请人： Intel Corporation
发明人： Kelly Lofgreen , Chandra Mohan Jha , Krishna Vasanth Valavala
IPC分类号： H01L23/38 , H10N10/01 , H10N10/17 , H10N10/851 , H10N19/00 , H01L23/00 , H01L25/00 , H01L23/48 , H01L25/16
CPC分类号： H01L23/38 , H10N10/01 , H10N10/17 , H10N10/851 , H10N19/101 , H01L23/481 , H01L24/09 , H01L25/165 , H01L25/50 , H01L2924/1432 , H01L2924/1434
摘要： An integrated circuit (IC) package comprising an IC die, the IC die having a first surface and an opposing second surface. The IC die comprises a semiconductor material. The first surface comprises an active layer. A thermoelectric cooler (TEC) comprising a thermoelectric material is embedded within the IC die between the first surface and the second surface and adjacent to the active layer. The TEC has an annular shape that is substantially parallel to the first and second surfaces of the IC die. The thermoelectric material is confined between an outer sidewall along an outer perimeter of the TEC and an inner sidewall along an inner perimeter of the TEC. The outer and inner sidewalls are substantially orthogonal to the first and second surfaces of the IC die.

33. 发明授权

US11678578B2 Thermoelectric micro-module with high leg density for energy harvesting and cooling applications 有权
公开(公告)号：US11678578B2
公开(公告)日：2023-06-13
申请号：US17164002
申请日：2021-02-01
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN
发明人： Khalil Najafi , Yi Yuan , Ethem Aktakka
IPC分类号： H10N10/17 , H10N10/01 , H10N10/852 , H10N10/853 , H10N10/855 , H10N19/00
CPC分类号： H10N10/17 , H10N10/01 , H10N10/852 , H10N10/853 , H10N10/855 , H10N19/101
摘要： Micro-scale thermoelectric devices having high thermal resistance and efficiency for use in cooling and energy harvesting applications and relating fabricating methods are disclosed. The thermoelectric devices include first substrates substantially parallel with second substrates. Scaffold members are deposited between the first and second substrate. The scaffold members include a plurality of cavities having sidewalls. The scaffold members may be formed from the second substrate. The sidewalls are substantially vertical with respect to the second substrate. The sidewalls may be substantially parallel. Thermoelectric materials are deposited on the sidewalls.

34. 发明公开

US20230157173A1 THERMOELECTRIC MODULE PROTECTION CIRCUIT AND THERMOELECTRIC DEVICE COMPRISING SAME 审中-公开
公开(公告)号：US20230157173A1
公开(公告)日：2023-05-18
申请号：US17917914
申请日：2021-01-21
申请人： TEGWAY CO.,LTD
发明人： Ockkyun OH
IPC分类号： H10N10/17 , H10N19/00 , G01R31/26
CPC分类号： H10N10/17 , H10N19/00 , G01R31/2637
摘要： The present specification relates to a thermoelectric module protection circuit and a thermoelectric device including the same, and According to one aspect of the present specification, there is provided a thermoelectric device including: a thermoelectric module having a first surface providing a thermal stimulus to a user and a second surface opposite to the first surface, and including an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface and an electrode configured to electrically connect the N-type semiconductor and the P-type semiconductor, a power supply unit configured to output a predetermined current applied to the thermoelectric module to cause the thermoelectric module to perform a thermoelectric operation including an endothermic operation and an exothermic operation so that the thermal stimulus is provided through the first surface, a voltage monitoring unit configured to monitor an output voltage of the thermoelectric module, wherein the output voltage reflects a temperature difference between the first surface and the second surface, a voltage comparison unit configured to compare the output voltage and a reference voltage, and output an application control signal which instructs whether to apply power to the thermoelectric module to stop supplying the power to the thermoelectric module when the temperature difference is greater than or equal to a threshold value, and a power controller configured to adjust whether to apply the power to the thermoelectric module based on the application control signal.

35. 发明授权

US12156472B2 Power regeneration in a memory device 有权
公开(公告)号：US12156472B2
公开(公告)日：2024-11-26
申请号：US17875802
申请日：2022-07-28
申请人： Micron Technology, Inc.
发明人： Anthony D Veches
IPC分类号： H10N19/00 , H01L23/38 , H10N10/01 , H10N10/17 , H01L23/00 , H01L29/68 , H10N10/13
CPC分类号： H10N19/00 , H01L23/38 , H10N10/01 , H10N10/17 , H01L23/576 , H01L29/685 , H10N10/13
摘要： A memory device comprises multiple memory dice arranged vertically in a stack of memory dice and at least one thermoelectric die contacting the bulk silicon layer of at least one of the memory dice of the multiple memory dice. Each memory die of the multiple memory dice includes an active circuitry layer that includes memory cells of a memory array and a bulk silicon layer. The thermoelectric die is configured to one or both of reduce heat from the memory die when a current is applied to terminals of the thermoelectric die and generate a voltage at the terminals of the thermoelectric die when heat from the memory die is applied to the thermoelectric die.

36. 发明授权

US12108675B1 Seebeck effect renewable energy arrangement 有权
公开(公告)号：US12108675B1
公开(公告)日：2024-10-01
申请号：US18440596
申请日：2024-02-13
申请人： Bernard Pappert
发明人： Bernard Pappert
IPC分类号： H10N10/17 , H10N19/00
CPC分类号： H10N10/17 , H10N19/00
摘要： A Seebeck effect renewable energy arrangement can be used to generate electricity due to temperature differences. The Seebeck effect renewable energy arrangement includes an environmental arrangement, a ground arrangement, and a power output arrangement. The environmental arrangement is connected to the ground arrangement to create an electrical circuit such that the temperature difference between the environmental temperature and the ground temperature generates electricity due to the Seebeck effect. The power output arrangement is operatively connected to the circuit to conduct electricity generated thereby to storage or use to power electrical devices.

37. 发明授权

US12078519B2 Thermopile-based flow sensing device 有权
公开(公告)号：US12078519B2
公开(公告)日：2024-09-03
申请号：US18352767
申请日：2023-07-14
申请人： Honeywell International Inc.
发明人： Robert Higashi , Scott Edward Beck , Yong-Fa Wang , Ian Bentley , Bill Hoover
IPC分类号： G01F1/688 , G01F1/684 , H10N10/851 , H10N19/00
CPC分类号： G01F1/6888 , G01F1/6847 , H10N10/851 , H10N19/00
摘要： Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.

38. 发明公开

US20240284800A1 THERMOELECTRIC DEVICE 审中-公开
公开(公告)号：US20240284800A1
公开(公告)日：2024-08-22
申请号：US18572365
申请日：2022-06-22
申请人： LG INNOTEK CO., LTD
发明人： Un Hak LEE
IPC分类号： H10N19/00 , H10N10/13 , H10N10/17
CPC分类号： H10N19/101 , H10N10/13 , H10N10/17
摘要： A thermoelectric device according to an embodiment of the present invention comprises: a fluid flow part including one surface and the other surface spaced apart from the one surface in a first direction; a first thermoelectric element arranged on one surface of the fluid flow part; and a second thermoelectric element arranged on the other surface of the fluid flow part, wherein a first through-hole penetrating from the one surface to the other surface thereof is arranged in the fluid flow part, and a wire electrically connected to the first thermoelectric element is electrically connected to the second thermoelectric element through the first through-hole.

39. 发明公开

US20240284799A1 DISPLAY MODULE AND DISPLAY APPARATUS 审中-公开
公开(公告)号：US20240284799A1
公开(公告)日：2024-08-22
申请号：US18041747
申请日：2022-02-24
申请人： CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Guoqiang TANG , Liang XIA , Kuo SUN
IPC分类号： H10N19/00 , G09G3/3225 , H04M1/72454 , H10K59/80 , H10K59/95 , H10K77/10 , H10N15/10
CPC分类号： H10N19/00 , H04M1/72454 , H10K59/95 , H10K77/10 , H10N15/10 , G09G3/3225 , G09G2330/026 , G09G2330/027 , G09G2354/00 , H10K59/8794
摘要： A display module includes a display panel, a support layer and a pyroelectric induction device layer. The support layer is disposed on a non-display side of the display panel. The pyroelectric induction device layer includes a first electrode layer, a pyroelectric induction layer and a second electrode layer that are sequentially disposed in a thickness direction of the support layer, and at least a portion of the pyroelectric induction device layer is embedded in the support layer.

40. 发明公开

US20240219239A1 VERTICALLY INTEGRATED MICRO-BOLOMETER AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20240219239A1
公开(公告)日：2024-07-04
申请号：US18201996
申请日：2023-05-25
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Yu-Wen HSU , Lu-Pu LIAO , Chao-Ta HUANG , Bo-Kai CHAO
IPC分类号： G01J5/20 , H10N19/00
CPC分类号： G01J5/20 , H10N19/00
摘要： A vertically integrated micro-bolometer includes an integrated circuit chip, an infrared sensing film, and a metal bonding layer. The integrated circuit chip includes a silicon substrate, a circuit element, and a dielectric layer disposed on the silicon substrate. The infrared sensing film includes a top absorbing layer, a sensing layer, and a bottom absorbing layer. The sensing layer is disposed between the top absorbing layer and the bottom absorbing layer. Materials of the top absorbing layer, the sensing layer, and the bottom absorbing layer are materials compatible with a semiconductor manufacturing process. The metal bonding layer connects the dielectric layer on the silicon substrate in the integrated circuit chip and the bottom absorbing layer of the infrared sensing film to form a vertically integrated micro-bolometer. In one embodiment, the infrared sensing film is divided into a central sensing film, a surrounding sensing film, and a plurality of connecting portions by a plurality of slots. The surrounding sensing film surrounds the central sensing film. Each of the connecting portions connects the surrounding sensing film and the central sensing film. A central distance from the bottom absorbing layer of the central sensing film to the silicon substrate is substantially equal to a surrounding distance from the bottom absorbing layer of the surrounding sensing film to the silicon substrate.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式