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    • 31. 发明公开
    • THERMOELECTRIC MODULE PROTECTION CIRCUIT AND THERMOELECTRIC DEVICE COMPRISING SAME
    • US20230157173A1
    • 2023-05-18
    • US17917914
    • 2021-01-21
    • TEGWAY CO.,LTD
    • Ockkyun OH
    • H10N10/17H10N19/00G01R31/26
    • H10N10/17H10N19/00G01R31/2637
    • The present specification relates to a thermoelectric module protection circuit and a thermoelectric device including the same, and According to one aspect of the present specification, there is provided a thermoelectric device including: a thermoelectric module having a first surface providing a thermal stimulus to a user and a second surface opposite to the first surface, and including an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface and an electrode configured to electrically connect the N-type semiconductor and the P-type semiconductor, a power supply unit configured to output a predetermined current applied to the thermoelectric module to cause the thermoelectric module to perform a thermoelectric operation including an endothermic operation and an exothermic operation so that the thermal stimulus is provided through the first surface, a voltage monitoring unit configured to monitor an output voltage of the thermoelectric module, wherein the output voltage reflects a temperature difference between the first surface and the second surface, a voltage comparison unit configured to compare the output voltage and a reference voltage, and output an application control signal which instructs whether to apply power to the thermoelectric module to stop supplying the power to the thermoelectric module when the temperature difference is greater than or equal to a threshold value, and a power controller configured to adjust whether to apply the power to the thermoelectric module based on the application control signal.
    • 36. 发明公开
    • VERTICALLY INTEGRATED MICRO-BOLOMETER AND MANUFACTURING METHOD THEREOF
    • US20240219239A1
    • 2024-07-04
    • US18201996
    • 2023-05-25
    • INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    • Yu-Wen HSULu-Pu LIAOChao-Ta HUANGBo-Kai CHAO
    • G01J5/20H10N19/00
    • G01J5/20H10N19/00
    • A vertically integrated micro-bolometer includes an integrated circuit chip, an infrared sensing film, and a metal bonding layer. The integrated circuit chip includes a silicon substrate, a circuit element, and a dielectric layer disposed on the silicon substrate. The infrared sensing film includes a top absorbing layer, a sensing layer, and a bottom absorbing layer. The sensing layer is disposed between the top absorbing layer and the bottom absorbing layer. Materials of the top absorbing layer, the sensing layer, and the bottom absorbing layer are materials compatible with a semiconductor manufacturing process. The metal bonding layer connects the dielectric layer on the silicon substrate in the integrated circuit chip and the bottom absorbing layer of the infrared sensing film to form a vertically integrated micro-bolometer. In one embodiment, the infrared sensing film is divided into a central sensing film, a surrounding sensing film, and a plurality of connecting portions by a plurality of slots. The surrounding sensing film surrounds the central sensing film. Each of the connecting portions connects the surrounding sensing film and the central sensing film. A central distance from the bottom absorbing layer of the central sensing film to the silicon substrate is substantially equal to a surrounding distance from the bottom absorbing layer of the surrounding sensing film to the silicon substrate.