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    • 40. 发明授权
    • Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications
    • 用于互补金属氧化物半导体堆叠芯片应用的单光子雪崩二极管成像传感器
    • US09312401B2
    • 2016-04-12
    • US14155848
    • 2014-01-15
    • OMNIVISION TECHNOLOGIES, INC.
    • Eric A. G. Webster
    • H01L27/00H03K17/78H01J40/14H01L31/02H01L31/107H01L27/146
    • H01L31/02027H01L27/14609H01L27/1463H01L27/14634H01L27/14636H01L31/107
    • An imaging sensor system includes a single photon avalanche diode (SPAD) imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially an entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side is configured to be illuminated with photons through a back side and through the substantially entire thickness of the fully depleted first semiconductor layer. Deep n type isolation regions are disposed in the first semiconductor layer between the pixels to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer that is bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and coupled to count output pulses generated by a respective one of the pixels.
    • 成像传感器系统包括单个光子雪崩二极管(SPAD)成像阵列,其包括形成在第一晶片的第一半导体层中的N个像素。 基本上每个像素的第一半导体层的整个厚度被完全耗尽,使得包括在前侧附近的每个像素中的乘法区被配置为被光子照射通过背面,并且通过完全耗尽的第一 半导体层。 深度n型隔离区域设置在像素之间的第一半导体层中以隔离像素。 N个数字计数器形成在第二晶片的与第一晶片接合的第二半导体层中。 N个数字计数器中的每一个耦合到SPAD成像阵列并被耦合以对由相应的一个像素产生的输出脉冲进行计数。