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    • 38. 发明授权
    • Broadband multipactor device
    • 宽带多机设备
    • US4634929A
    • 1987-01-06
    • US583920
    • 1984-02-27
    • Paul Fischer
    • Paul Fischer
    • H01J25/76H01J25/10
    • H01J25/76
    • A plurality of contiguous cavity pairs of multipactor input and output cavities respectively formed in two opposing ridge waveguide sections and which are mutually separated by an acceleration drift region of relatively high DC electric field strength. Both waveguide sections include means such as an RF window at one end for coupling RF power in and out of the sections while the other end is suitably terminated and additionally provides the structure which can be placed under a vacuum to properly function. The cavity pairs are arranged in a linear array subassembly within each of the waveguides and are designed to have a broadband frequency response by progressively increasing in frequency so that half power points of contiguous cavity pairs are in close proximity.
    • 分别形成在两个相对的脊形波导部分中并且由相对高的DC电场强度的加速度漂移区域相互分离的多个连续的空腔对的多反应器输入和输出腔。 两个波导部分包括诸如在一端的RF窗口的装置,用于将RF功率耦合到和流出部分,而另一端被适当地端接,并且另外提供可以放置在真空下以正常工作的结构。 空腔对布置在每个波导内的线性阵列子组件中,并且被设计为通过逐渐增加频率具有宽带频率响应,使得相邻腔对的半个功率点紧邻。
    • 39. 发明授权
    • Semiconductor multipactor device
    • 半导体多元器件
    • US4602190A
    • 1986-07-22
    • US612524
    • 1984-05-21
    • Joseph D. Evankow, Jr.
    • Joseph D. Evankow, Jr.
    • H01J25/76H01J7/46
    • H01J25/76
    • The placement of one or a pair of suitably biased thin semiconductor epital layers on the secondary emission surface of a multipactor device provides an improvement of devices which operate in accordance with the principle of multipactoring. A multipactor device is disclosed having a multipactor region comprised of at least one surface formed of one or more thin epitaxial semiconductor layers, the outer layer being of n-type semiconductor material consisting of, for example, gallium phosphide covered with cesium which provides an abundance of free electrons at the surface when biased in the forward direction. In one disclosed configuration the multipactor region is located in a section of waveguide while in another arrangement the region is located on the top of a post in a multipactor input cavity.
    • 在多反应器装置的二次发射表面上放置一个或一对适当偏置的薄半导体外延层提供了根据多次反馈原理操作的装置的改进。 公开了具有由至少一个由一个或多个薄外延半导体层形成的表面的多层反应器区域的多层反应器区域,该外层是由例如提供丰度的铯覆盖的磷化镓构成的n型半导体材料 的自由电子在正向方向偏置时的表面。 在一个所公开的配置中,多个反应器区域位于波导的一部分中,而在另一布置中,该区域位于多反应器输入腔中的柱的顶部。