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31. 发明授权

US09893234B2 Composite substrate for light-emitting element and production method therefor 有权
公开(公告)号：US09893234B2
公开(公告)日：2018-02-13
申请号：US15182741
申请日：2016-06-15
申请人： NGK INSULATORS, LTD.
发明人： Morimichi Watanabe , Jun Yoshikawa , Tsutomu Nanataki , Katsuhiro Imai , Tomohiko Sugiyama , Takashi Yoshino , Yukihisa Takeuchi , Kei Sato
IPC分类号： H01L29/06 , H01L33/16 , C30B9/10 , C30B19/02 , C30B25/18 , C30B29/40 , H01L21/02 , H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/16 , C30B9/10 , C30B19/02 , C30B25/18 , C30B25/183 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02554 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L33/0008 , H01L33/0025 , H01L33/0066 , H01L33/0075 , H01L33/06 , H01L33/32
摘要： Provided is a light emitting device composite substrate suitable for manufacturing large-area light emitting devices at low cost. The light emitting device composite substrate comprises a substrate composed of an oriented polycrystalline alumina sintered body, and a light emitting functional layer formed on the substrate and having two or more layers composed of semiconductor single crystal grains, wherein each of the two or more layers has a single crystal structure in a direction approximately normal to the substrate.

32. 发明授权

US09790617B2 Group III nitride bulk crystals and their fabrication method 有权
公开(公告)号：US09790617B2
公开(公告)日：2017-10-17
申请号：US14720819
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto , Edward Letts
IPC分类号： C30B29/56 , C30B23/02 , C30B7/10 , H01L29/20 , H01L29/32 , C30B23/06 , C30B25/20 , C30B29/66 , C30B29/64 , C30B9/10 , C30B29/40
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.

33. 发明授权

US09708728B1 Growth of metal oxide single crystals from alkaline-earth metal fluxes 有权
公开(公告)号：US09708728B1
公开(公告)日：2017-07-18
申请号：US13550050
申请日：2012-07-16
申请人： Jeffrey Brian Whalen , Theo Siegrist
发明人： Jeffrey Brian Whalen , Theo Siegrist
IPC分类号： C30B19/02 , C30B15/00 , C30B9/10 , C30B29/22
CPC分类号： C30B15/00 , C30B9/10 , C30B19/02 , C30B29/22 , C30B29/225
摘要： A process for the growth of new, and difficult-to-synthesize, metal oxide, and other mixed anion oxide-based, single crystals from a molten metal flux. Metal fluxes are new for the growth of metal oxide single crystals. Preliminary reactions proved that new phases and phases that normally require costly, extreme conditions do grow as single crystals. Batches of individual reactions are heat-treated to synthesize single crystals comprised of oxygen with one or more transition, alkaline-earth and/or lanthanide metals, and can also include other anions like chalcogens or pnictogens, or halides. The reactivity and the propensity for crystallization of charge compensated single crystals from alkaline earth fluxes have been made evident by the results presented here.

34. 发明申请

US20150203992A1 ARTICLE COMPRISING A SEMICONDUCTING MATERIAL 有权
标题翻译：包含半导体材料的文章
公开(公告)号：US20150203992A1
公开(公告)日：2015-07-23
申请号：US14674567
申请日：2015-03-31
申请人： The Florida State University Research Foundation, Inc.
发明人： Jeffrey Whalen , Theo Siegrist
IPC分类号： C30B29/46 , H01B1/10 , C30B9/10 , H01B1/08
CPC分类号： C30B29/46 , C30B9/10 , C30B9/12 , C30B29/22 , H01B1/08 , H01B1/10
摘要： Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.
摘要翻译：使用新型晶体生长法合成了新的半导体氧化硫化物相的单晶。该晶体分别具有低的缺陷和均匀的组成，其特征在于单晶X射线衍射和扫描电子显微镜。热容量和电阻率测量与计算的表示半导电性的带结构计算一致，带隙约为3eV。

35. 发明授权

US08962456B2 Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device 有权
标题翻译： III族氮化物半导体单晶，其制造方法，自立式衬底和半导体器件
公开(公告)号：US08962456B2
公开(公告)日：2015-02-24
申请号：US13952480
申请日：2013-07-26
申请人： Toyoda Gosei Co., Ltd.
发明人： Shiro Yamazaki , Miki Moriyama
IPC分类号： H01L21/20 , H01L21/36 , H01L29/20 , C30B9/12 , C30B29/64 , C30B29/40 , H01L29/66 , H01L29/778 , H01L29/78 , C30B9/10 , C30B19/02 , C30B19/06 , C30B19/10 , H01L33/00
CPC分类号： C30B9/12 , C30B9/10 , C30B19/02 , C30B19/06 , C30B19/10 , C30B29/403 , C30B29/406 , C30B29/64 , H01L29/2003 , H01L29/66462 , H01L29/66734 , H01L29/7786 , H01L29/7813 , H01L33/0075 , Y10T428/21
摘要： Objects of the present invention are to provide a method for producing a Group III nitride semiconductor single crystal, which method enables production of a Group III nitride semiconductor single crystal having a flat surface by means of a crucible having any inside diameter; to provide a self-standing substrate obtained from the Group III nitride semiconductor single crystal; and to provide a semiconductor device employing the self-standing substrate. The production method includes adding the template, a flux, and semiconductor raw materials to a crucible and growing a Group III nitride semiconductor single crystal while the crucible is rotated. In the growth of the semiconductor single crystal, the crucible having an inside diameter R (mm) is rotated at a maximum rotation speed ω (rpm) satisfying the following conditions: ω1−4≦ω≦ω1+4; ω1=10z; and z=−0.78×log10(R)+3.1.
摘要翻译：本发明的目的是提供一种用于制造III族氮化物半导体单晶的方法，该方法能够通过具有任何内径的坩埚生产具有平坦表面的III族氮化物半导体单晶; 以提供从III族氮化物半导体单晶获得的自立衬底; 并提供一种使用该自立式基板的半导体器件。制造方法包括在坩埚旋转的同时将坩埚，助熔剂，半导体原料添加到坩埚中，生长III族氮化物半导体单晶。在半导体单晶的生长中，具有内径R（mm）的坩埚以满足以下条件的最大转速ω（rpm）旋转：ω1-4＆nlE;ω＆nlE;ω1+ 4; ω1= 10z; z = -0.78×log 10（R）+ 3.1。

36. 发明授权

US08801855B2 Method for processing silicon powder to obtain silicon crystals 有权
标题翻译：加工硅粉以获得硅晶体的方法
公开(公告)号：US08801855B2
公开(公告)日：2014-08-12
申请号：US13625348
申请日：2012-09-24
申请人： Silicor Materials Inc.
发明人： Scott Nichol
IPC分类号： C30B9/04 , C30B9/06 , C30B9/10 , C30B27/02 , C30B28/10 , C01B33/037
CPC分类号： C01B33/037 , C30B9/10 , C30B29/06
摘要： Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid.
摘要翻译：本发明的实施例涉及从硅获得硅晶体的方法。该方法包括使硅粉与溶剂金属接触以提供含有硅的混合物，在浸没下熔化硅以提供第一熔融液体，使第一熔融液体与第一气体接触以提供浮渣和第二熔融液体，分离渣和第二熔液，冷却第二熔液以形成第一硅晶体和第一母液，并分离第一硅晶体和第一母液。

37. 发明申请

US20140147953A1 Method for Peeling Group 13 Element Nitride Film 有权
标题翻译：剥离13号元素氮化物膜的方法
公开(公告)号：US20140147953A1
公开(公告)日：2014-05-29
申请号：US14167567
申请日：2014-01-29
申请人： NGK INSULATORS, LTD.
发明人： Makoto Iwai , Takayuki Hirao , Takashi Yoshino
IPC分类号： C30B9/10 , H01L33/00
CPC分类号： C30B9/10 , C30B19/02 , C30B29/403 , C30B33/06 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10T156/11
摘要： A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.
摘要翻译：第13族元素的氮化物的膜3通过助熔剂在含氮气氛的含熔剂和13族元素的熔体中在籽晶衬底11上生长。第13族元素的氮化物的膜3在与晶种基板11一侧的第13族元素的氮化物的膜3的界面11a以外的区域中包含夹杂物分布层3a，来自熔体的组分和包含物耗尽层3b，其中包含物耗尽。设置在层3a上。从晶种基板11的背面侧侧照射激光A，通过激光剥离法从晶种基板11剥离第13族元素的氮化物的单晶3。

38. 发明授权

US08685164B2 Method for processing silicon powder to obtain silicon crystals 有权
公开(公告)号：US08685164B2
公开(公告)日：2014-04-01
申请号：US13625348
申请日：2012-09-24
申请人： Silicor Materials Inc.
发明人： Scott Nichol
IPC分类号： C30B9/04 , C30B9/06 , C30B9/10 , C30B27/02 , C30B28/10 , C01B33/037
摘要： Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid.

39. 发明申请

US20130263775A1 APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZING CARBON FIBER CONTAINING MATERIALS AND GROUP-III NITRIDE GROWN THEREWITH 审中-公开
标题翻译：用于生长含III族氮化物晶体的装置利用含有碳纤维的材料和III族硝酸盐
公开(公告)号：US20130263775A1
公开(公告)日：2013-10-10
申请号：US13860382
申请日：2013-04-10
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： Siddha Pimputkar , Paul Von Dollen , Shuji Nakamura , James S. Speck
IPC分类号： C30B7/10 , C30B9/10
CPC分类号： C30B7/10 , C30B7/105 , C30B9/10 , C30B29/403 , Y10T117/1096
摘要： A method and apparatus for growing crystals in a reactor vessel, wherein the reactor vessel uses carbon fiber containing materials as a structural element to contain the materials for growing the crystals as a solid, liquid or gas within the reactor vessel, such that the reactor vessel can withstand pressures or temperatures necessary for the growth of the crystals. The carbon fiber containing materials encapsulate at least one component of the reactor vessel, wherein stresses from the encapsulated component are transferred to the carbon fiber containing materials. The carbon fiber containing materials may be wrapped around the encapsulated component one or more times sufficient to maintain a desired pressure differential between an exterior and interior of the encapsulated component.
摘要翻译：一种用于在反应器容器中生长晶体的方法和装置，其中反应器容器使用含碳纤维的材料作为结构元件，以容纳在反应器容器内作为固体，液体或气体生长晶体的材料，使得反应器容器可承受晶体生长所需的压力或温度。含碳纤维的材料包封反应器容器的至少一个组分，其中来自包封的组分的应力被转移到含碳纤维的材料中。含碳纤维的材料可以围绕包封的组分缠绕一次或多次，足以在包封的组分的外部和内部之间保持所需的压力差。

40. 发明申请

US20100288189A1 Floating Semiconductor Foils 失效
标题翻译：浮动半导体箔片
公开(公告)号：US20100288189A1
公开(公告)日：2010-11-18
申请号：US12713170
申请日：2010-02-25
申请人： Uri Cohen , Michael Roitberg
发明人： Uri Cohen , Michael Roitberg
IPC分类号： C30B9/10
CPC分类号： C30B9/10 , C30B15/06
摘要： One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T2, wherein the density of Si and/or Ge is smaller than the density of the molten metallic bath; cooling the molten metallic bath to a lower temperature T1, thereby causing Si and/or Ge to separate out of the molten metallic bath and to float and grow as a Si and/or Ge foil on a top surface of the molten metallic bath; and separating the floating Si and/or Ge foil from the top surface of the molten metallic bath.
摘要翻译：本发明的一个实施方案是一种制备硅（Si）和/或锗（Ge）箔的方法，所述方法包括：将Si和/或Ge源材料溶解在高温T2的熔融金属浴中，其中 Si和/或Ge的密度小于熔融金属浴的密度; 将熔融金属浴冷却至较低温度T1，从而使Si和/或Ge从熔融金属浴中分离出来，并在熔融金属浴的顶面上以Si和/或Ge箔漂浮和生长; 以及从熔融金属浴的顶表面分离漂浮的Si和/或Ge箔。

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