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31. 发明申请

US20090124042A1 ZnO BASED SEMICONDUCTOR DEVICE MANUFACTURE METHOD 有权
标题翻译：基于ZnO的半导体器件制造方法
公开(公告)号：US20090124042A1
公开(公告)日：2009-05-14
申请号：US12265105
申请日：2008-11-05
申请人： Naochika HORIO , Kazufumi TANAKA
发明人： Naochika HORIO , Kazufumi TANAKA
IPC分类号： H01L21/44
CPC分类号： H01L33/0083 , H01L33/20 , H01L33/22 , H01L33/405 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01322 , H01L2924/00014 , H01L2924/00
摘要： A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a −C plane on an opposite surface, a first ZnO based semiconductor layer having a first conductivity type epitaxially grown above the +C plane of the ZnO based semiconductor substrate, and a second ZnO based semiconductor layer having a second conductivity type opposite to the first conductivity type epitaxially grown above the first semiconductor layer; and (b) wet-etching the ZnO based semiconductor wafer with acid etching liquid to etch the −C plane of the ZnO based semiconductor substrate
摘要翻译：一种ZnO系半导体器件的制造方法，其特征在于，包括以下工序：（a）制造ZnO系半导体晶片，其具有在一个面上具有+ C面的wurzeit结构的ZnO系半导体衬底和相对面上的-C面，具有在所述ZnO基半导体衬底的+ C平面上方外延生长的第一导电类型的第一ZnO基半导体层和具有与在所述第一半导体上方外延生长的所述第一导电类型相反的第二导电类型的第二ZnO基半导体层层; 和（b）用酸蚀刻液湿法蚀刻ZnO基半导体晶片以蚀刻ZnO基半导体衬底的-C面

32. 发明申请

US20080258142A1 Semiconductor device, its manufacture method and template substrate 有权
标题翻译：半导体器件，其制造方法和模板基板
公开(公告)号：US20080258142A1
公开(公告)日：2008-10-23
申请号：US12079617
申请日：2008-03-27
申请人： Hiroyuki Kato , Michihiro Sano
发明人： Hiroyuki Kato , Michihiro Sano
IPC分类号： H01L29/10 , H01L21/16
CPC分类号： H01L21/02579 , H01L21/02403 , H01L21/02472 , H01L21/02488 , H01L21/02502 , H01L21/02554 , H01L21/02631 , H01L33/0083 , H01L33/12 , H01L33/28
摘要： The semiconductor device has: a ZnO-containing substrate containing Li; a zinc silicate layer formed above the ZnO-containing substrate; and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.
摘要翻译：半导体器件具有：含有Li的含ZnO基材; 形成在含ZnO基材上方的硅酸锌层; 以及通过硅酸锌层相对于含ZnO基板外延生长的半导体层。

33. 发明授权

US06815316B2 Apparatus for fabricating compound semiconductor device 失效
标题翻译：用于制造化合物半导体器件的装置
公开(公告)号：US06815316B2
公开(公告)日：2004-11-09
申请号：US10318768
申请日：2002-12-13
申请人： Takao Nakamura
发明人： Takao Nakamura
IPC分类号： C23C1600
CPC分类号： H01L33/0083 , Y10S438/931
摘要： A system for fabricating a compound semiconductor device includes a gas treatment apparatus that performs a hydrogen chloride gas etching on a compound semiconductor substrate, a radical treatment apparatus that performs a radical hydrotreatment on the substrate, a semiconductor film forming apparatus that forms a compound semiconductor film on the treated substrate, a conductive film forming apparatus that forms a conductive film on the substrate, and an ultrahigh vacuum transfer path that connects together the several apparatuses so that the substrate being processed can be transferred through the transfer path from apparatus to apparatus under a continuously maintained ultrahigh vacuum environment. Some of the apparatuses can overlap or share functions with one another.

34. 发明申请

US20020071952A1 Preparation of nanocrystallites 有权
标题翻译：纳米微晶的制备
公开(公告)号：US20020071952A1
公开(公告)日：2002-06-13
申请号：US09732013
申请日：2000-12-08
发明人： Moungi Bawendi , Nathan E. Stott
IPC分类号： H01L021/00 , B32B005/16 , B32B009/00 , B32B015/02 , B32B017/02 , B32B019/00 , B32B021/02 , B32B023/02 , B32B027/02
CPC分类号： C01B17/20 , B82Y30/00 , C01B19/007 , C01P2004/64 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605 , H01L33/005 , H01L33/0083 , Y10S516/922 , Y10S977/813 , Y10S977/815 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/822 , Y10S977/823 , Y10S977/824 , Y10S977/916 , Y10T428/2991
摘要： A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.
摘要翻译：从含M盐形成纳米晶体的方法形成纳米晶体。纳米微晶可以是具有窄尺寸分布的纳米晶体群的成员，并且可以包括一种或多种半导体材料。半导体纳米晶体可以光致发光并具有高发射量子效率。

35. 发明授权

US5989339A MBE system and semiconductor device fabricated, using same 失效
标题翻译： MBE系统和半导体器件制造，使用相同
公开(公告)号：US5989339A
公开(公告)日：1999-11-23
申请号：US527456
申请日：1995-09-13
申请人： Koshi Tamamura , Hironori Tsukamoto , Masao Ikeda
发明人： Koshi Tamamura , Hironori Tsukamoto , Masao Ikeda
IPC分类号： C30B23/02 , H01L21/203 , H01L21/363 , H01L33/28 , H01S5/00 , C30B29/48
CPC分类号： H01L33/0083 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02562
摘要： A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor layers not containing Te. The second chamber is used to form II-VI column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.
摘要翻译：一种具有至少包含第一室和第二室的多个室的分子束外延系统。第一室用于形成不含Te的II-VI列化合物半导体层。第二室用于形成至少含有Te的II-VI列化合物半导体层。可以制造具有欧姆特性的半导体器件，而不将Te混合到其它层中。

36. 发明授权

US5366927A Method of fabricating epitaxially deposited ohmic contacts using group II-V I 失效
标题翻译：使用II-VI族半导体材料制造外延沉积的欧姆接触的方法
公开(公告)号：US5366927A
公开(公告)日：1994-11-22
申请号：US128634
申请日：1993-09-28
申请人： Jan F. Schetzina
发明人： Jan F. Schetzina
IPC分类号： H01L21/443 , H01L33/00 , H01L33/28 , H01L33/40 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/327 , H01L21/20
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/443 , H01L33/0083 , H01L33/28 , H01S5/0421 , H01S5/0215 , H01S5/183 , H01S5/3095 , H01S5/3215 , H01S5/327 , H01S5/347 , Y10S148/064 , Y10S438/936
摘要： An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc telluride selenide (ZnTe.sub.x Se.sub.1-x) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc telluride selenide layer and a conductor (such as metal) layer on the mercury selenide layer. The zinc telluride selenide and mercury selenide layers between the p-type zinc selenide and the conductor layer provide an ohmic contact by eliminating the band offset between the wide bandgap zinc selenide and the conductor. Step graded, linear graded, and parabolic graded layers of zinc telluride selenide may be provided. An integrated heterostructure is formed by epitaxially depositing the ohmic contact on the Group II-VI device. A removable overcoat layer may be formed on the Group II-VI device to allow room temperature atmospheric pressure transfer of the device from a zinc based deposition chamber to a mercury based deposition chamber, for deposition of the ohmic contact. A large area emitter may be formed by limiting the thickness of the mercury selenide layer so that optical radiation passes therethrough. A high efficiency optical emitter may be provided by using zinc telluride selenide or zinc sulfur telluride selenide to form an isoelectronic trap which produces broad and intense light output in the blue/green region.
摘要翻译：与II-VI族半导体器件中的p型硒化锌（ZnSe）层的欧姆接触包括在硒化锌层上的碲化锌硒化锌（ZnTexSe1-x）层，锌上的汞硒化物（HgSe）层硒化碲层和汞硒化物层上的导体（如金属）层。 p型硒化锌与导体层之间的碲化锌硒化物和硒化汞层通过消除宽带隙硒化锌与导体之间的带偏移而提供欧姆接触。可以提供步骤分级，线性分级和碲化锌硒化物的抛物线分级层。通过外延沉积II-VI族元件上的欧姆接触来形成集成的异质结构。可以在II-VI族装置上形成可移除的外涂层，以使装置的室温大气压力从锌基沉积室转移到基于汞的沉积室，用于沉积欧姆接触。可以通过限制硒化汞层的厚度使得光学辐射通过其中而形成大面积发射极。可以通过使用碲化镉硒或碲化碲硒化物来形成高效光发射器，以形成在蓝/绿区域产生宽而强的光输出的等电子阱。

37. 发明授权

US5351255A Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same 失效
标题翻译：包括外延欧姆接触的II-VI族半导体材料的反向集成异质结构及其制造方法
公开(公告)号：US5351255A
公开(公告)日：1994-09-27
申请号：US54040
申请日：1993-04-28
申请人： Jan F. Schetzina
发明人： Jan F. Schetzina
IPC分类号： H01L29/43 , H01L21/28 , H01L21/443 , H01L33/00 , H01L33/28 , H01L33/40 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/327 , H01S3/19
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/443 , H01L33/0083 , H01L33/28 , H01S5/0421 , H01S5/0215 , H01S5/183 , H01S5/3095 , H01S5/327 , H01S5/347
摘要： An inverted integrated heterostructure includes an optical emission heterostructure formed of Group II-VI compound semiconductor materials having first and second opposing faces and including a layer of p-type zinc selenide or an alloy thereof at the first face. A zinc mercury selenide or a zinc telluride selenide layer is formed on the layer of p-type zinc selenide or an alloy thereof, and a mercury selenide layer is formed on the zinc mercury selenide or zinc telluride selenide layer, opposite the optical emission heterostructure. An ohmic electrode is formed on the mercury selenide layer opposite the zinc mercury selenide or a zinc telluride selenide layer, and a transparent ohmic electrode is formed on the second face of the optical emission heterostructure for allowing optical emissions from the optical emission heterostructure to pass therethrough. The ohmic electrode is preferably an optically reflecting ohmic electrode for reflecting optical emissions from the optical emission heterostructure back into the optical emission heterostructure. A substrate is also preferably included on the ohmic electrode opposite the mercury selenide layer. The substrate is preferably an electrically and thermally conducting substrate. The integrated heterostructure may be formed by forming an optical emission heterostructure including an epitaxial ohmic contact on a first substrate, bonding the ohmic contact to a second substrate and then removing the first substrate.
摘要翻译：反向集成异质结构包括由具有第一和第二相对面的II-VI族化合物半导体材料形成的光发射异质结构，并且在第一面上包括一层p型硒化锌或其合金。在p型硒化锌层或其合金层上形成硒化锌锌或碲化锌镉层，并在与汞发光异质结构相反的硒化锌汞化镓或碲化锌硒化物层上形成汞硒化物层。在与汞锌硒化物相对的汞硒化物层或硒化碲化锌层上形成欧姆电极，并且在发光异质结构的第二面上形成透明欧姆电极，以允许来自光发射异质结构的光发射通过。欧姆电极优选是用于将来自光发射异质结构的光发射反射回光发射异质结构的光反射欧姆电极。在与硒化汞层相对的欧姆电极上也优选包含衬底。衬底优选为导电和导热衬底。可以通过在第一衬底上形成包括外延欧姆接触的光发射异质结构，将欧姆接触接合到第二衬底，然后去除第一衬底来形成集成异质结构。

38. 发明授权

US5294833A Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same 失效
标题翻译：包括外延欧姆接触的II-VI族半导体材料的集成异质结构及其制造方法
公开(公告)号：US5294833A
公开(公告)日：1994-03-15
申请号：US934190
申请日：1992-08-21
申请人： Jan F. Schetzina
发明人： Jan F. Schetzina
IPC分类号： H01L21/443 , H01L33/00 , H01L33/28 , H01L33/40 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/327 , H01L29/161 , H01L29/205 , H01L29/225
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/443 , H01L33/0083 , H01L33/28 , H01S5/0421 , H01S5/0215 , H01S5/183 , H01S5/3095 , H01S5/3215 , H01S5/327 , H01S5/347 , Y10S148/064 , Y10S438/936
摘要： An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc telluride selenide (ZnTe.sub.x Se.sub.1-x) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc telluride selenide layer and a conductor (such as metal) layer on the mercury selenide layer. The zinc telluride selenide and mercury selenide layers between the p-type zinc selenide and the conductor layer provide an ohmic contact by eliminating the band offset between the wide bandgap zinc selenide and the conductor. Step graded, linear graded, and parabolic graded layers of zinc telluride selenide may be provided. An integrated heterostructure is formed by epitaxially depositing the ohmic contact on the Group II-VI device. A removable overcoat layer may be formed on the Group II-VI device to allow room temperature atmospheric pressure transfer of the device from a zinc based deposition chamber to a mercury based deposition chamber, for deposition of the ohmic contact. A large area emitter may be formed by limiting the thickness of the mercury selenide layer so that optical radiation passes therethrough. A high efficiency optical emitter may be provided by using zinc telluride selenide or zinc sulfur telluride selenide to form an isoelectronic trap which produces broad and intense light output in the blue/green region.
摘要翻译：与II-VI族半导体器件中的p型硒化锌（ZnSe）层的欧姆接触包括在硒化锌层上的碲化锌硒化锌（ZnTexSe1-x）层，锌上的汞硒化物（HgSe）层硒化碲层和汞硒化物层上的导体（如金属）层。 p型硒化锌与导体层之间的碲化锌硒化物和硒化汞层通过消除宽带隙硒化锌与导体之间的带偏移而提供欧姆接触。可以提供步骤分级，线性分级和碲化锌硒化物的抛物线分级层。通过外延沉积II-VI族元件上的欧姆接触来形成集成的异质结构。可以在II-VI族装置上形成可移除的外涂层，以使装置的室温大气压力从锌基沉积室转移到基于汞的沉积室，用于沉积欧姆接触。可以通过限制硒化汞层的厚度使得光学辐射通过其中而形成大面积发射极。可以通过使用碲化镉硒或碲化碲硒化物来形成高效光发射器，以形成在蓝/绿区域产生宽而强的光输出的等电子阱。

39. 发明授权

US5192419A Method for producing a zinc selenide blue light emitting device 失效
标题翻译：生产锌锌蓝光发光装置的方法
公开(公告)号：US5192419A
公开(公告)日：1993-03-09
申请号：US765425
申请日：1991-09-25
申请人： Koichi Matsuura , Fuminori Takeda , Kenichi Kurisu
发明人： Koichi Matsuura , Fuminori Takeda , Kenichi Kurisu
IPC分类号： H01L21/208 , H01L21/368 , H01L33/28 , H01L33/40
CPC分类号： H01L33/28 , H01L21/02409 , H01L21/0256 , H01L21/02579 , H01L21/02628 , H01L33/0083
摘要： A p-type ZnSe bulk or film crystal of good quality has not been produced so far, although various improved methods based on MOCVD or MBE methods have been tried. Prior art required high pressure, high temperature or high vacuum to grow a p-type ZnSe crystal. This invention grows p-type ZnSe by an electrochemical deposition method. A zinc anode and a low-resistivity n-type ZnSe singlecrystalline substrate are immersed into a solution including zinc ions, selenium ions and acceptor ions. Direct current is sent from the zinc anode to the n-type ZnSe singlecrystalline substrate cathode. Selenium ions and zinc ions are attracted to the n-type ZnSe cathode. They are reduced and are deposited on the n-type ZnSe cathode. Deposited ZnSe film is a p-type semiconductor. A ZnSe semiconductor with a pn-junction is obtained.

40. 发明授权

US5103269A Electroluminescent device of compound semiconductor comprising ZnS or ZnS and ZnSe 失效
标题翻译：包含ZNS或ZNS和ZNSE的复合半导体的电致发光器件
公开(公告)号：US5103269A
公开(公告)日：1992-04-07
申请号：US549317
申请日：1990-07-09
申请人： Yoshitaka Tomomura , Masahiko Kitagawa , Kenji Nakanishi
发明人： Yoshitaka Tomomura , Masahiko Kitagawa , Kenji Nakanishi
IPC分类号： H01L33/06 , H01L33/10 , H01L33/28 , H01L33/40 , H01S5/00
CPC分类号： H01L33/40 , H01L33/0008 , H01L33/0037 , H01L33/0083 , H01L33/28 , H01L33/285
摘要： An electroluminescent device of compound semiconductor which comprises a single crystal substrate made of ZnS or a mixed crystal of ZnS and ZnSe and a p-n junction-type epitaxial layer made of ZnSe or a mixed crystal of ZnS and ZnSe having a composition different from that of the single crystal substrate,the p-n junction-type epitaxial layer being formed over the single crystal substrate through an epitaxial interlayer which is made of ZnS and ZnSe and capable of relaxing the lattice strain between the single crystal substrate and the p-n junction-type epitaxial layer.
摘要翻译：一种化合物半导体的电致发光器件，其包括由ZnS或ZnS和ZnSe的混合晶体制成的单晶衬底和由ZnSe制成的pn结型外延层或ZnS和ZnSe的组合不同于单晶衬底，pn结型外延层通过由ZnS和ZnSe制成并能够缓和单晶衬底和pn结型外延层之间的晶格应变的外延中间层在单晶衬底上形成。

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