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31. 发明授权

US09454059B1 MZM linear driver for silicon photonics 有权
标题翻译：用于硅光子学的MZM线性驱动器
公开(公告)号：US09454059B1
公开(公告)日：2016-09-27
申请号：US14472193
申请日：2014-08-28
申请人： INPHI CORPORATION
发明人： Radhakrishnan L. Nagarajan
IPC分类号： G02F1/225 , G02F1/025 , G02F1/21 , G02F1/015
CPC分类号： G02F1/0121 , G02F1/0123 , G02F1/025 , G02F1/225 , G02F1/2255 , G02F1/2257 , G02F2001/0154 , G02F2001/212 , H04B10/25 , H04B10/505 , H04L7/0075
摘要： The present invention includes a linear driver for Mach-Zehnder modulator (MZM) configured in a differential form with two waveguides carrying two traveling waves. Each waveguide comprises a MZM material configured with either a single segment in 3×MZM length or two split segments with one in 2×MZM length and another one in either 1× or 2×MZM length. By coupling a DC current source supplied with a modulation voltage with each segment thereof for providing electrical modulation signal overlapping with each of the two traveling waves. The modulated traveling waves in the two waveguides then are combined in one output signal by a multimode interference coupler. By properly choosing the configuration of MZM linear segments with optional length ratios, a low power consumption MZM linear driver provides either NRZ or PAM-4 modulation scheme to the input optical signals for telecommunication through silicon photonics.
摘要翻译：本发明包括一种以差分形式配置的马赫曾德尔调制器（MZM）的线性驱动器，其具有两个携带两个行波的波导。每个波导包括配置有3×MZM长度的单个段或具有2×MZM长度的2个分割段的MZM材料，以及1×或2×MZM长度的另一个。通过将提供有调制电压的DC电流源与其每个段耦合以提供与两个行波中的每一个重叠的电调制信号。然后，两个波导中的调制行波由多模干涉耦合器组合在一个输出信号中。通过适当选择具有可选长度比的MZM线性段的配置，低功耗MZM线性驱动器为通过硅光子学的电信输入光信号提供NRZ或PAM-4调制方案。

32. 发明申请

US20160091663A1 Optical Closed Loop Microresonator and Thyristor Memory Device 有权
标题翻译：光闭环微谐振器和晶闸管存储器件
公开(公告)号：US20160091663A1
公开(公告)日：2016-03-31
申请号：US14943502
申请日：2015-11-17
申请人： Opel Solar, Inc. , The University of Connecticut
发明人： Geoff W. Taylor
IPC分类号： G02B6/293 , G02B6/35 , G02B6/124 , G02B6/134 , G02B6/13 , G02F1/017
CPC分类号： G02F1/01708 , B82Y20/00 , G02B6/12007 , G02B6/124 , G02B6/125 , G02B6/131 , G02B6/1347 , G02B6/29338 , G02B6/3536 , G02F2001/0151 , G02F2001/0154 , H01L45/06 , Y10S977/755
摘要： A semiconductor device that includes an optical resonator spaced from a waveguide structure to provide for evanescent-wave optical coupling therebetween. The optical resonator includes a closed loop waveguide defined by a vertical thyristor structure. In one embodiment, the vertical thyristor structure is formed by an epitaxial layer structure including complementary (both an n-type and a p-type) modulation doped quantum well interfaces formed between an N+ region and a P+ region.
摘要翻译：一种半导体器件，其包括与波导结构间隔开的光学谐振器，以在其之间提供ev逝波光耦合。光谐振器包括由垂直晶闸管结构限定的闭环波导。在一个实施例中，垂直晶闸管结构由包括形成在N +区和P +区之间的互补（n型和p型）调制掺杂量子阱界面的外延层结构形成。

33. 发明申请

US20150226987A1 Optical Device Using Semiconductors 审中-公开
标题翻译：使用半导体的光器件
公开(公告)号：US20150226987A1
公开(公告)日：2015-08-13
申请号：US14430194
申请日：2012-12-06
申请人： KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Hyo-Hoon Park , Jong Hun Kim , Mu Hee Cho , Tae-Woo Lee , Young-Tak Han
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02B6/125 , G02F1/3132 , G02F1/3138 , G02F2001/0151 , G02F2001/0152 , G02F2001/0154
摘要： Optical refraction and reflection control can be achieved by means of semiconductor silicon which has a p-n junction structure and a waveguide structure. According to the optical device using semiconductors of the present invention, the amplitude of light can be directly modulated using the reflection or refraction control. The optical device according to the preferred embodiment of the present invention includes: a first waveguide on which an optical signal is incident, and which is formed in the same direction as that of the incident optical signal; a second waveguide that forms a fixed angle with the first waveguide; and a reflector which is capable of selecting a path of the optical signal to the first waveguide or to the second waveguide as a refractive index is changed according to an applied voltage, and which is formed to have a fixed angle of inclination with respect to the first waveguide.
摘要翻译：光折射和反射控制可以通过具有p-n结结构和波导结构的半导体硅来实现。根据本发明的使用半导体的光学器件，可以使用反射或折射控制直接调制光的幅度。根据本发明的优选实施例的光学装置包括：光信号入射的第一波导，并且沿与入射光信号相同的方向形成; 与第一波导形成固定角度的第二波导; 并且能够根据施加的电压来选择能够将作为折射率的第一波导或第二波导的光信号的路径选择的反射体，并且形成为相对于第一波导。

34. 发明授权

US08300991B2 Waveguide-type semiconductor optical modulator and method for manufacturing the same 有权
标题翻译：波导型半导体光调制器及其制造方法
公开(公告)号：US08300991B2
公开(公告)日：2012-10-30
申请号：US12736127
申请日：2009-01-21
申请人： Tomoaki Kato
发明人： Tomoaki Kato
IPC分类号： G02F1/035 , H01L33/00
CPC分类号： G02B6/12004 , B82Y20/00 , G02B6/131 , G02B6/136 , G02F1/01708 , G02F1/2255 , G02F1/2257 , G02F2001/0151 , G02F2001/0154 , G02F2001/212 , G02F2201/063 , G02F2201/127 , G02F2202/06 , G02F2202/101 , G02F2202/102 , G02F2202/108 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L21/02581
摘要： Provided is a traveling-wave type semiconductor optical phase modulator capable of high speed and low voltage operation by improving an n-SI-i-n-type layered structure. A first exemplary aspect of the present invention is a waveguide-type semiconductor optical modulator including: a semiconductor substrate (101); a first n-type cladding layer (103) and a second n-type cladding layer (108) formed on the semiconductor substrate (101); an undoped optical waveguide core layer (104) and an electron trapping layer (107) formed between the first n-type cladding layer (103) and the second n-type cladding layer (108); and a hole supplying layer (106) formed between the undoped optical waveguide core layer (104) and the electron trapping layer (107).
摘要翻译：提供一种通过改善n-SI-i-n型分层结构能够实现高速和低电压操作的行波型半导体光相位调制器。本发明的第一示例性方面是一种波导型半导体光调制器，包括：半导体衬底（101）; 形成在半导体基板（101）上的第一n型覆盖层（103）和第二n型覆盖层（108）。形成在第一n型包覆层（103）和第二n型包覆层（108）之间的未掺杂的光波导芯层（104）和电子俘获层（107）。以及形成在未掺杂的光波导芯层（104）和电子俘获层（107）之间的孔供给层（106）。

35. 发明申请

US20100142026A1 SEMICONDUCTOR OPTICAL MODULATOR 有权
标题翻译：半导体光学调制器
公开(公告)号：US20100142026A1
公开(公告)日：2010-06-10
申请号：US12530569
申请日：2008-02-06
申请人： Tomoaki Kato
发明人： Tomoaki Kato
IPC分类号： G02F1/03
CPC分类号： G02F1/025 , G02F2001/0154 , G02F2201/127
摘要： An optical modulator is provided with a stripe-shaped optical waveguide, which has an upper clad layer, a lower clad layer formed between the upper clad layer and a substrate, and an undoped core layer which is arranged between the upper clad layer and the lower clad layer and has a complex refractive index that changes corresponding to the intensity of an applied electric field, to a signal light propagating inside. On the both sides of the stripe-shaped optical waveguide, conductor walls are configured by arranging a pair of parallel blocking flat boards with an insulating wall in between. Thus, the semiconductor optical modulator having a high optical modulation efficiency is provided
摘要翻译：光调制器设置有条形光波导，其具有上覆盖层，形成在上覆盖层和基板之间的下覆盖层，以及布置在上覆层和下层之间的未掺杂芯层并且具有与施加的电场强度相对应的复合折射率与内部传播的信号光。在条形光波导的两侧，导体壁通过在其间布置一对具有绝缘壁的平行阻挡平板而构成。因此，提供了具有高光调制效率的半导体光调制器

36. 发明授权

US06396083B1 Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity 失效
标题翻译：具有谐振腔的光学半导体器件可调波长，适用于调制光强度
公开(公告)号：US06396083B1
公开(公告)日：2002-05-28
申请号：US09603897
申请日：2000-06-26
申请人： Valentin Ortiz , Nikolaos Pelekanos
发明人： Valentin Ortiz , Nikolaos Pelekanos
IPC分类号： H01L3300
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/218 , G02F2001/0151 , G02F2001/0154 , G02F2001/0175 , G02F2001/213 , G02F2201/346 , G02F2203/055 , H01S5/0622 , H01S5/183 , H01S5/3216 , H01S5/3409
摘要： Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity. This device comprises a resonant cavity (2) delimited by two mirrors (4, 6) and at least one super-lattice (14) that is placed in the cavity and is formed from piezoelectric semiconducting layers, and means (20) of injecting charge carriers into the super-lattice. The optical properties of this super-lattice can thus be modified and the wavelength of cavity resonance modes can be offset. The invention is particularly applicable to optical telecommunications.
摘要翻译：具有谐振腔的光学半导体器件，其可调谐波长，适用于调制光强度。该器件包括由两个反射镜（4,6）限定的谐振腔（2）和至少一个超晶格（14）并且由压电半导体层形成，以及将载流子注入超晶格的装置（20）。因此可以改变该超晶格的光学特性，并且可以抵消腔谐振模式的波长。本发明特别适用于光通信。

37. 发明授权

US5239598A Electro-optic waveguide device 失效
标题翻译：电光波导器件
公开(公告)号：US5239598A
公开(公告)日：1993-08-24
申请号：US746343
申请日：1991-08-16
申请人： David R. Wight , John M Heaton , Meirion F. Lewis , Christopher L. West
发明人： David R. Wight , John M Heaton , Meirion F. Lewis , Christopher L. West
IPC分类号： G02F1/015 , G02F1/025 , G02F1/295
CPC分类号： G02F1/025 , G02F1/295 , G02F2001/0154
摘要： An electro-optic waveguide device (10) comprises an assembly of waveguides (30) connected to a common light input region (41) and forming a common far field diffraction pattern (44). The device (10) comprises an n.sup.+ GaAs substrate (14) bearing a waveguide lower cladding layer (16) of n.sup.+ Ga.sub.0.9 Al.sub.0.1 As, which is in turn surmounted by a waveguide core layer (18) of n.sup.- GaAs. The layer (18) has grooves (20) defining the waveguides (30), each of which has a respective Schottky contact (32). Each contact (32) is biased negative with respect to the substrate (14), which reverse biases the respective Schottky diode waveguide structure. The waveguide core layer (18) has electro-optic properties, and its refractive index varies with electric field. The phase of light emerging from each waveguide is therefore independently variable by means of its applied bias voltage. The waveguides (30) are arranged to provide output confined very largely to lowest order spatial modes, so that they produce a single far field diffraction pattern (44). Varying the set of bias voltages applied to the waveguides (30) produces output phase variation which changes the position of the diffraction pattern principal maximum (46) to produce beam steering.
摘要翻译：电光波导装置（10）包括连接到公共光输入区域（41）并形成公共远场衍射图案（44）的波导组件（30）。装置（10）包括带有n + Ga0.9Al0.1As的波导下包层（16）的n + GaAs衬底（14），其又由n-GaAs的波导芯层（18）覆盖。层（18）具有限定波导（30）的凹槽（20），每个波导具有相应的肖特基接触（32）。每个触点（32）相对于衬底（14）偏置为负，这反向偏置相应的肖特基二极管波导结构。波导芯层（18）具有电光性质，其折射率随电场而变化。因此，从每个波导出射的光的相位可以通过其施加的偏置电压独立地变化。波导（30）被布置成提供非常大地限制在最低阶空间模式的输出，使得它们产生单个远场衍射图案（44）。改变施加到波导（30）的偏置电压的集合产生输出相位变化，其改变衍射图案主要最大值（46）的位置以产生波束转向。

38. 发明授权

US4837526A Semiconductor external optical modulator 失效
标题翻译：半导体外部光调制器
公开(公告)号：US4837526A
公开(公告)日：1989-06-06
申请号：US42433
申请日：1987-04-24
申请人： Masatoshi Suzuki , Yukio Noda , Yukitoshi Kushiro , Shigeyuki Akiba
发明人： Masatoshi Suzuki , Yukio Noda , Yukitoshi Kushiro , Shigeyuki Akiba
IPC分类号： G02F1/015 , G02F1/025
CPC分类号： G02F1/025 , G02F2001/0154 , G02F2001/0157 , G02F2203/25 , G02F2203/255
摘要： A semiconductor external modulator is disclosed in which the mode of polarization of incident light, the crystal plane of the substrate (the direction of application of an electrical field), the energy gap of the optical waveguide layer, and the direction of travel of light are determined so that, of variations in the real and imaginary parts of the refractive index of the optical waveguide layer which are caused by the application of the electric field to the semiconductor external optical modulator, the variation in the real part of the refractive index may be reduced to substantially zero.
摘要翻译：公开了一种半导体外部调制器，其中入射光的偏振模式，衬底的晶面（施加电场的方向），光波导层的能隙以及光的行进方向是确定为使得由于对半导体外部光学调制器施加电场而导致的光波导层的折射率的实部和虚部的变化，折射率的实部的变化可以是降至基本为零。

39. 发明授权

US3726585A Electrically modulated radiation filters 失效
标题翻译：电动调制辐射滤波器
公开(公告)号：US3726585A
公开(公告)日：1973-04-10
申请号：US3726585D
申请日：1971-02-22
申请人： FEDOTOWSKY A , LEHOVEC K
发明人： FEDOTOWSKY A , LEHOVEC K
IPC分类号： G02F1/015 , G02F1/21 , G02F1/315 , H04N3/14 , G02F1/38
CPC分类号： H04N3/14 , G02F1/015 , G02F1/21 , G02F1/315 , G02F2001/0154
摘要： The intensity of a monochromatic light beam is modulated by passing it through a multilayer arrangement near the critical angle of incidence thereby causing multiple reflections in one of these layers acting as an optical resonator and by varying the refractive index of at least one of said multilayers by an electrical or electromagnetic field.
摘要翻译：通过使其穿过临界入射角附近的多层布置来调制单色光束的强度，从而在这些层中的一个中作为光谐振器并且通过改变至少一个所述多层的折射率来改变所述多层的折射率，由电场或电磁场。

40. 发明授权

US3611207A Wide aperture electrooptic modulator 失效
标题翻译：宽孔电磁调制器
公开(公告)号：US3611207A
公开(公告)日：1971-10-05
申请号：US3611207D
申请日：1970-01-05
申请人： KLAHR CARL N
发明人： KLAHR CARL N
IPC分类号： G02F1/015 , H01S3/05 , H01S3/18
CPC分类号： G02F1/015 , G02F2001/0154
摘要： This invention consists of a P-N junction electrooptic modulator in a semiconductor exhibiting the Pockels effect. The modulator has a relatively wide optical aperture surrounding the junction. This wide aperture is obtained by use of a junction with a relatively shallow concentration gradient of dopant impurities.

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