专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20110263062A1 Highly Luminescent Color-Selective Nanocrystalline Materials 有权
公开(公告)号：US20110263062A1
公开(公告)日：2011-10-27
申请号：US13157466
申请日：2011-06-10
申请人： Moungi G. Bawendi , Klavs F. Jensen , Bashir O. Dabbousi , Javier Rodriguez-Viejo , Frederic Victor Mikulec
发明人： Moungi G. Bawendi , Klavs F. Jensen , Bashir O. Dabbousi , Javier Rodriguez-Viejo , Frederic Victor Mikulec
IPC分类号： H01L33/40 , B82Y99/00
CPC分类号： C09K11/883 , B82Y20/00 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2004/80 , C01P2004/86 , C01P2006/60 , C07F9/224 , C07F9/5304 , C09K11/02 , C09K11/565 , C09K11/885 , C09K11/892 , C30B7/00 , C30B7/14 , C30B29/46 , C30B29/48 , C30B29/60 , C30B29/605 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/813 , Y10S977/824 , Y10S977/832 , Y10T428/12035 , Y10T428/12049 , Y10T428/12181 , Y10T428/12986 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.

32. 发明申请

US20110079751A1 THERMOELECTRIC CONVERSION MATERIAL AND PRODUCING METHOD THEREOF, AND THERMOELECTRIC CONVERSION ELEMENT USING THE SAME 有权
标题翻译：热电转换材料及其制造方法以及使用其的热电转换元件
公开(公告)号：US20110079751A1
公开(公告)日：2011-04-07
申请号：US12906917
申请日：2010-10-18
申请人： Cheol-Hee PARK , Se-Hui Sohn , Seung-Tae Hong , Won-Jong Kwon , Tae-Hoon Kim
发明人： Cheol-Hee PARK , Se-Hui Sohn , Seung-Tae Hong , Won-Jong Kwon , Tae-Hoon Kim
IPC分类号： C09K5/00 , C01B19/00
CPC分类号： H01L35/16 , C09K11/881 , C09K11/885 , H01B1/08 , H01B1/10 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/18 , H01L35/22 , Y02E10/50
摘要： Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Ti, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0≦x
摘要翻译：热电转换材料，由下式表示：Bi1-xMxCuwOa-yQ1yTeb-zQ2z。这里，M是选自Ba，Sr，Ca，Mg，Cs，K，Na，Cd，Hg，Sn，Pb，Eu，Sm，Mn，Ga，In，Ti，As和锑 Q1和Q2是选自S，Se，As和Sb中的至少一种元素; x，y，z，w，a和b分别为0＆nlE; x <1,0,0

33. 发明申请

US20110079750A1 COMPOUND SEMICONDUCTOR AND ITS MANUFACTURING METHOD, AND THERMOELECTRIC CONVERSION DEVICE USING THE SAME 有权
标题翻译：化合物半导体及其制造方法和使用其的热电转换装置
公开(公告)号：US20110079750A1
公开(公告)日：2011-04-07
申请号：US12902927
申请日：2010-10-12
申请人： Cheol-Hee Park , Se-Hui Sohn , Won-Jong Kwon , Tae-Hoon Kim , Seung-Tae Hong
发明人： Cheol-Hee Park , Se-Hui Sohn , Won-Jong Kwon , Tae-Hoon Kim , Seung-Tae Hong
IPC分类号： C09K5/00 , H01B1/02
CPC分类号： H01L35/16 , C09K11/881 , C09K11/885 , H01B1/08 , H01B1/10 , H01L31/0272 , H01L31/032 , H01L31/072 , H01L31/0725 , H01L35/18 , H01L35/22 , Y02E10/50
摘要： Disclosed is a new compound semiconductor represented by the chemical formula: Bi1-x-yLnxMyCuOTe where Ln belongs to the lanthanoid series and is any one or more elements selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, M is any one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb, and 0
摘要翻译：公开了由化学式Bi1-x-yLnxMyCuOTe表示的新的化合物半导体，其中Ln属于镧系元素，并且是选自La，Ce，Pr，Nd，Pm，Sm，Eu中的任何一种或多种元素，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu中的任一种，M是选自Ba，Sr，Ca，Mg，Cd，Hg，Sn，Pb，Mn，Ga， In，Tl，As和Sb，0

34. 发明授权

US07112921B2 Light emitting device having selenium-based fluorescent phosphor 失效
标题翻译：具有硒系荧光体的发光元件
公开(公告)号：US07112921B2
公开(公告)日：2006-09-26
申请号：US10801067
申请日：2004-03-15
申请人： Hisham Menkara , Christopher Summers , Brent K. Wagner
发明人： Hisham Menkara , Christopher Summers , Brent K. Wagner
IPC分类号： H05B33/14 , C09K11/56
CPC分类号： C09K11/885 , C09K11/886 , H01L33/502 , Y02B20/181
摘要： Provided herein are novel phosphors useful in the manufacture of white light emitting diodes. The phosphors provided by the invention are described by the formulae: MSxSey: B in which x, and y are each independently any value between about 0 and about 1, subject to the proviso that the sum of x and y is equal to any number in the range of between about 0.75 and about 1.25; M is at least one of Be, Mg, Ca, Sr, Ba, Zn, excepting Zn alone; and wherein the activator(s) B comprises one or more elements selected from the group consisting of: Eu, Ce, Cu, Ag, Al, Tb, Sb, Bi, K, Na, Cl, F, Br, I, Mg, Pr, and Mn, including mixtures comprising any two, any three, any four, any five, any six, any seven, or more of these elements in any proportion, and wherein the elements in these mixtures may each independently be present in any amount between 0.0001% and about 10% in mole percent based on the total molar weight of said composition. Standard techniques used in conventional phosphor deposition for the manufacture of light emitting diodes which comprise phosphors according to the invention may be employed to produce LED's having a white light output.
摘要翻译：本文提供了可用于制造白色发光二极管的新型荧光体。由本发明提供的荧光体由下式描述：<？in-line-formula description =“In-line Formulas”end =“lead”？> MS Se SUB>：B <？in-line-formula description =“In-line Formulas”end =“tail”？>其中x和y各自独立为约0至约1之间的任何值，但条件是 x和y的和等于约0.75至约1.25范围内的任何数字; M除Be之外还有Be，Mg，Ca，Sr，Ba，Zn中的至少一种; 并且其中所述活化剂B包含一种或多种选自Eu，Ce，Cu，Ag，Al，Tb，Sb，Bi，K，Na，Cl，F，Br，I，Mg， Pr和Mn，包括任何比例包含任何两种，任何三种，任何四种，任何五种，六种，任何七种或更多种这些元素的混合物，并且其中这些混合物中的元素可以各自独立地以任何量存在基于所述组合物的总摩尔量，0.0001％至约10％（摩尔）。用于制造包含根据本发明的磷光体的发光二极管的常规磷光体沉积中的标准技术可用于产生具有白光输出的LED。

35. 发明授权

US07060243B2 Tellurium-containing nanocrystalline materials 有权
公开(公告)号：US07060243B2
公开(公告)日：2006-06-13
申请号：US10456592
申请日：2003-06-09
申请人： Moungi G. Bawendi , Frederic V. Mikulec , Sungjee Kim
发明人： Moungi G. Bawendi , Frederic V. Mikulec , Sungjee Kim
IPC分类号： C01B19/00
CPC分类号： C09K11/883 , B82Y20/00 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2004/80 , C01P2004/86 , C01P2006/60 , C07F9/224 , C07F9/5304 , C09K11/02 , C09K11/565 , C09K11/885 , C09K11/892 , C30B7/00 , C30B7/14 , C30B29/46 , C30B29/48 , C30B29/60 , C30B29/605 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/813 , Y10S977/824 , Y10S977/832 , Y10T428/12035 , Y10T428/12049 , Y10T428/12181 , Y10T428/12986 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.

36. 发明申请

US20060006397A1 Device and method for emitting output light using group IIA/IIB selenide sulfur-based phosphor material 审中-公开
标题翻译：使用IIA / IIB族硒化物硫基荧光体材料发射输出光的装置和方法
公开(公告)号：US20060006397A1
公开(公告)日：2006-01-12
申请号：US10920497
申请日：2004-08-17
申请人： Janet Chua , Kee Ng , Azlida Ahmad
发明人： Janet Chua , Kee Ng , Azlida Ahmad
IPC分类号： H01L27/15
CPC分类号： C09K11/7731 , C09K11/885 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/181 , Y02B20/181 , H01L2924/00014 , H01L2924/00012
摘要： A device and method for emitting output light utilizes Group IIA/IIB element Selenide Sulfur-based phosphor material to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the optical spectrum of the output light. Thus, the device and method can be used to produce white color light. The device and method may also utilize Thiogallate-based phosphor material.
摘要翻译：用于发射输出光的装置和方法利用组IIA / IIB元素硒化物硫基磷光体材料将至少一些从器件的光源发射的原始光转换成较长波长的光，以改变输出光的光谱。因此，可以使用该装置和方法来产生白色光。该装置和方法还可以使用基于硫堇酸盐的荧光体材料。

37. 发明申请

US20050031888A1 Tellurium-containing nanocrystalline materials 有权
标题翻译：含碲的纳米晶体材料
公开(公告)号：US20050031888A1
公开(公告)日：2005-02-10
申请号：US10456592
申请日：2003-06-09
申请人： Moungi Bawendi , Frederic Mikulec , Sungjee Kim
发明人： Moungi Bawendi , Frederic Mikulec , Sungjee Kim
IPC分类号： C01B19/00 , C07F9/22 , C07F9/53 , C30B7/00 , H01L33/00 , B32B27/02 , B32B15/02 , B32B5/16
CPC分类号： C09K11/883 , B82Y20/00 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2004/80 , C01P2004/86 , C01P2006/60 , C07F9/224 , C07F9/5304 , C09K11/02 , C09K11/565 , C09K11/885 , C09K11/892 , C30B7/00 , C30B7/14 , C30B29/46 , C30B29/48 , C30B29/60 , C30B29/605 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/813 , Y10S977/824 , Y10S977/832 , Y10T428/12035 , Y10T428/12049 , Y10T428/12181 , Y10T428/12986 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.
摘要翻译：含碲的纳米晶体通过将前体注入热配位溶剂中，随后进行受控生长和退火来制备。纳米晶体可以包括CdTe，ZnTe，MgTe，HgTe或其合金。纳米晶体的光致发光率可以高达70％。

38. 发明申请

US20040033359A1 Highly luminescnt color-selective nanocrystalline materials 有权
标题翻译：高度发光的选色纳米晶体材料
公开(公告)号：US20040033359A1
公开(公告)日：2004-02-19
申请号：US10642578
申请日：2003-08-19
申请人： Massachusetts Institute of Technology, a Massachusetts corporation
发明人： Moungi Bawendi , Klaus F. Jensen , Bashir O. Dabbousi , Javier Rodriguez-Viejo , Frederic Victor Mikulec
IPC分类号： H01L021/00
CPC分类号： C09K11/883 , B82Y20/00 , B82Y30/00 , C01B17/20 , C01B19/007 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/52 , C01P2004/64 , C01P2004/80 , C01P2004/86 , C01P2006/60 , C07F9/224 , C07F9/5304 , C09K11/02 , C09K11/565 , C09K11/885 , C09K11/892 , C30B7/00 , C30B7/14 , C30B29/46 , C30B29/48 , C30B29/60 , C30B29/605 , Y10S977/773 , Y10S977/774 , Y10S977/777 , Y10S977/813 , Y10S977/824 , Y10S977/832 , Y10T428/12035 , Y10T428/12049 , Y10T428/12181 , Y10T428/12986 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： A coated nanocrystal capable of light emission includes a substantially monodisperse nanoparticle selected from the group consisting of CdX, where xnullS, Se, Te and an overcoating of ZnY, where YnullS, Se, uniformly deposited thereon, said coated nanoparticle characterized in that when irradiated the particles exhibit photoluminescence in a narrow spectral range of no greater than about 60 nm, and most preferably 40 nm, at full width half max (FWHM). The particle size of the nanocrystallite core is in the range of about 20 null to about 125 null, with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescence having quantum yields of greater than 30%.
摘要翻译：能够发光的涂覆纳米晶体包括选自CdX的基本上单分散的纳米颗粒，其中x = S，Se，Te和ZnY的外涂层，其中Y = S，Se均匀地沉积在其上，所述涂覆的纳米颗粒的特征在于当照射时，颗粒在全宽度半最大值（FWHM）下在不大于约60nm，最优选40nm的窄光谱范围内显示光致发光。纳米晶核的粒径在大约至大约的范围内，核心的偏差小于10％。涂覆的纳米晶体显示出具有大于30％的量子产率的光致发光。

39. 发明申请

US20030087129A1 Treated phosphor, making method, thin film making apparatus, and EL device 审中-公开
标题翻译：处理过的荧光粉，制造方法，薄膜制造装置和EL装置
公开(公告)号：US20030087129A1
公开(公告)日：2003-05-08
申请号：US10307319
申请日：2002-12-02
申请人： TDK Corp.
发明人： Noboru Miura , Mitsuhiro Kawanishi , Yoshihiko Yano
IPC分类号： H05B033/14 , C09K011/08
CPC分类号： C09K11/625 , C09K11/643 , C09K11/885 , H05B33/145
摘要： A light-emitting thin film or phosphor is low temperature annealed by electron beam irradiation to effect crystallization and increase luminance without causing heat-associated damage to the underlying substrate. The treated thin film or phosphor is particularly well adapted for use in electroluminescent devices. The invention is also directed at a method and apparatus for reliably forming luminescent thin films endowed with such properties.
摘要翻译：发光薄膜或荧光体通过电子束照射进行低温退火以实现结晶并增加亮度，而不会对下面的基底造成热量相关的损害。经处理的薄膜或磷光体特别适用于电致发光器件。本发明还涉及一种用于可靠地形成具有这种性质的发光薄膜的方法和装置。

40. 发明授权

US5700592A Electroluminescent materials for edge emitters 失效
标题翻译：用于边缘发射器的电致发光材料
公开(公告)号：US5700592A
公开(公告)日：1997-12-23
申请号：US571566
申请日：1995-12-13
申请人： Gerd O. Mueller , Regina B. Mueller-Mach
发明人： Gerd O. Mueller , Regina B. Mueller-Mach
IPC分类号： C09K11/00 , C09K11/77 , C09K11/88 , H05B33/12 , H05B33/14 , H05B33/00
CPC分类号： C09K11/885 , C09K11/7702 , C09K11/7703 , C09K11/7767 , H05B33/14 , Y10S428/917
摘要： An electroluminescent edge emitting device having an improved operational life and electroluminescent efficiency includes a host material composed of at least two Group II elements and at least one element selected from Group VIA. The host material is doped with at least one of the rare earth elements in its 3+ or 2+ oxidation state. In one embodiment of the invention, two Group IIB elements are selected, namely cadmium and zinc. In an alternate embodiment, three Group IIA elements, magnesium, calcium and strontium, are selected as the host material. The Group VIA element is sulfide and/or selenide. The dopant is composed of one, two or three elements selected from the rare earth elements (lanthanides). In an alternate embodiment, the dopants include Mn.sup.2+ and one or two of the lanthanides.
摘要翻译：具有改善的操作寿命和电致发光效率的电致发光边缘发射器件包括由至少两个II族元素和选自VIA族组成的至少一种元素组成的主体材料。主体材料掺杂有至少一种其3+或2+氧化态的稀土元素。在本发明的一个实施方案中，选择两种IIB族元素，即镉和锌。在替代实施例中，选择三种IIA族元素，镁，钙和锶作为主体材料。 VIA族元素是硫化物和/或硒化物。掺杂剂由选自稀土元素（镧系元素）的一种，两种或三种元素组成。在替代实施方案中，掺杂剂包括Mn 2+和一种或两种镧系元素。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式