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31. 发明授权

US07928425B2 Semiconductor device including a metal-to-semiconductor superlattice interface layer and related methods 有权
标题翻译：包括金属到半导体超晶格界面层的半导体器件及相关方法
公开(公告)号：US07928425B2
公开(公告)日：2011-04-19
申请号：US12018255
申请日：2008-01-23
申请人： Kalipatnam Vivek Rao
发明人： Kalipatnam Vivek Rao
IPC分类号： H01L29/06
CPC分类号： H01L29/154 , H01L29/1054 , H01L29/165 , H01L29/66643
摘要： A semiconductor device which may include a semiconductor layer, and a superlattice interface layer therebetween. The superlattice interface layer may include a plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. At least some atoms from opposing base semiconductor portions may be chemically bound together with the chemical bonds traversing the at least one intervening non-semiconductor monolayer.
摘要翻译：可以包括半导体层的半导体器件和它们之间的超晶格界面层。超晶格界面层可以包括多个堆叠的层组。每组层可以包括限定基底半导体部分的多个层叠的基底半导体单层，以及约束在相邻的基底半导体部分的晶格内的至少一个非半导体单层。来自相对的基底半导体部分的至少一些原子可以与穿过至少一个介入的非半导体单层的化学键化学地结合在一起。

32. 发明授权

US07880161B2 Multiple-wavelength opto-electronic device including a superlattice 有权
标题翻译：多波长光电器件包括超晶格
公开(公告)号：US07880161B2
公开(公告)日：2011-02-01
申请号：US11675833
申请日：2007-02-16
申请人： Robert J. Mears , Robert John Stephenson , Marek Hytha , Ilija Dukovski , Jean Augustin Chan Sow Fook Yiptong , Samed Halilov , Xiangyang Huang
发明人： Robert J. Mears , Robert John Stephenson , Marek Hytha , Ilija Dukovski , Jean Augustin Chan Sow Fook Yiptong , Samed Halilov , Xiangyang Huang
IPC分类号： H01L29/06
CPC分类号： H01L31/035236 , B82Y20/00 , H01L29/15 , H01L31/076 , H01L33/06 , H01L33/08 , H01L33/28 , H01S5/3072 , Y02E10/548
摘要： A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacked groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon.
摘要翻译：多波长光电器件可以包括衬底和由衬底承载并在不同的相应波长下操作的多个有源光学器件。每个光学器件可以包括超晶格，其包括多个堆叠的层组，并且每组层可以包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的半导体单层。

33. 发明授权

US07535041B2 Method for making a semiconductor device including regions of band-engineered semiconductor superlattice to reduce device-on resistance 有权
标题翻译：制造包括带状工程半导体超晶格区域以减少器件导通电阻的半导体器件的方法
公开(公告)号：US07535041B2
公开(公告)日：2009-05-19
申请号：US11534343
申请日：2006-09-22
申请人： Richard A. Blanchard
发明人： Richard A. Blanchard
IPC分类号： H01L21/338
CPC分类号： H01L29/7802 , B82Y10/00 , H01L21/823807 , H01L29/0873 , H01L29/1054 , H01L29/152 , H01L29/155 , H01L29/158 , H01L29/66568 , H01L29/66681 , H01L29/66712 , H01L29/66734 , H01L29/78 , H01L29/7813 , H01L29/7816
摘要： A method for making a semiconductor device which may include providing a substrate having a plurality of spaced apart superlattices therein, and forming source and drain regions in the substrate defining a channel region therebetween and with the plurality of spaced apart superlattices in the channel and/or drain regions. Each superlattice may include a plurality of stacked groups of layers, with each group including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. Moreover, the at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.
摘要翻译：一种用于制造半导体器件的方法，其可以包括提供其中具有多个间隔开的超晶格的衬底，以及在衬底中形成源极和漏极区域，在衬底中限定沟道区域，以及沟道中的多个间隔开的超晶格和/或漏区。每个超晶格可以包括多个堆叠的层组，每个组包括限定基极半导体部分和其上的至少一个非半导体单层的多个堆叠的基底半导体单层。此外，至少一个非半导体单层可以被约束在相邻的基底半导体部分的晶格内。

34. 发明授权

US07436026B2 Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions 有权
标题翻译：半导体器件包括在源极和漏极区域之上垂直阶梯形的超晶格沟道
公开(公告)号：US07436026B2
公开(公告)日：2008-10-14
申请号：US10940426
申请日：2004-09-14
申请人： Scott A. Kreps
发明人： Scott A. Kreps
IPC分类号： H01L29/76
CPC分类号： H01L29/1054 , H01L21/823807 , H01L29/155 , H01L29/7833
摘要： A semiconductor device may include a semiconductor substrate and at least one metal oxide semiconductor field-effect transistor (MOSFET). The at least one MOSFET may include spaced apart source and drain regions in the semiconductor substrate, and a superlattice channel including a plurality of stacked groups of layers on the semiconductor substrate between the source and drain regions. The superlattice channel may have upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor. The at least one MOSFET may additionally include a gate overlying the superlattice channel.
摘要翻译：半导体器件可以包括半导体衬底和至少一个金属氧化物半导体场效应晶体管（MOSFET）。至少一个MOSFET可以包括在半导体衬底中的间隔开的源极和漏极区域，以及超晶格沟道，其在源极和漏极区域之间在半导体衬底上包括多个层叠的层组。超晶格通道可以具有在源极和漏极区域的相邻上表面部分之上垂直阶梯的上表面部分。超晶格通道的每组层可以包括在其上限定基极半导体部分和能带修饰层的多个层叠的基底半导体单层。能带改性层可以包括约束在相邻基极半导体的晶格内的至少一个非半导体单层。至少一个MOSFET可以另外包括覆盖超晶格通道的栅极。

35. 发明授权

US07435988B2 Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel 有权
标题翻译：包括具有带状工程超晶格的MOSFET的半导体器件，其具有提供沟道的半导体盖层
公开(公告)号：US07435988B2
公开(公告)日：2008-10-14
申请号：US11042270
申请日：2005-01-25
申请人： Robert J. Mears , Jean Augustin Chan Sow Fook Yiptong , Marek Hytha , Scott A. Kreps , Ilija Dukovski
发明人： Robert J. Mears , Jean Augustin Chan Sow Fook Yiptong , Marek Hytha , Scott A. Kreps , Ilija Dukovski
IPC分类号： H01L29/06
CPC分类号： H01L29/1054 , H01L21/823807 , H01L29/155 , H01L29/7833
摘要： A semiconductor device may include a substrate and at least one MOSFET adjacent the substrate including a superlattice. The superlattice may include a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of layers. Each group of layers of the superlattice may comprise a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The MOSFET may further include source, drain, and gate regions defining a channel through at least a portion of the semiconductor cap layer.
摘要翻译：半导体器件可以包括衬底和与包括超晶格的衬底相邻的至少一个MOSFET。超晶格可以包括多个堆叠的层组，并且在最上层组上可以包括半导体盖层。超晶格的每组层可以包括限定基极半导体部分的多个堆叠的基底半导体单层和限制在相邻的基极半导体部分的晶格内的至少一个非半导体单层。 MOSFET还可以包括通过半导体盖层的至少一部分限定沟道的源极，漏极和栅极区域。

36. 发明授权

US07433729B2 Infrared biometric finger sensor including infrared antennas and associated methods 有权
标题翻译：红外生物识别手指传感器包括红外线天线和相关方法
公开(公告)号：US07433729B2
公开(公告)日：2008-10-07
申请号：US10935484
申请日：2004-09-03
申请人： Dale R. Setlak , Richard J. Jones
发明人： Dale R. Setlak , Richard J. Jones
IPC分类号： A61B6/00
CPC分类号： G06K9/0004 , G06K9/00013 , G06K9/0002 , G06K9/00026 , G06K9/0012 , G06K9/00885
摘要： A finger sensor may include an integrated circuit substrate for receiving a user's finger adjacent thereto, and a plurality of infrared sensing pixels on the substrate. Each infrared sensing pixel may include at least one temperature sensor, at least one infrared antenna, and at least one conductive via interconnecting the at least one temperature sensor and the at least one infrared antenna. The infrared sensing pixels are for sensing infrared radiation emitted from subdermal features when the user's finger is positioned adjacent the integrated circuit substrate. The finger sensor apparatus may also include a processor connected to the infrared sensing pixels for generating infrared biometric data based upon infrared radiation emitted from the subdermal features of the user's finger.
摘要翻译：手指传感器可以包括用于接收与其相邻的用户手指的集成电路基板，以及在基板上的多个红外感测像素。每个红外感测像素可以包括至少一个温度传感器，至少一个红外天线和至少一个导电通孔，其互连至少一个温度传感器和至少一个红外天线。当用户的手指位于集成电路基板附近时，红外感测像素用于感测从皮下特征发射的红外辐射。手指传感器装置还可以包括连接到红外感测像素的处理器，用于基于从用户手指的皮下特征发射的红外辐射来产生红外生物数据。

37. 发明授权

US07303948B2 Semiconductor device including MOSFET having band-engineered superlattice 有权
标题翻译：包括具有带工程超晶格的MOSFET的半导体器件
公开(公告)号：US07303948B2
公开(公告)日：2007-12-04
申请号：US11089950
申请日：2005-03-25
申请人： Robert J. Mears , Jean Augustin Chan Sow Fook Yiptong , Marek Hytha , Scott A. Kreps , Ilija Dukovski
发明人： Robert J. Mears , Jean Augustin Chan Sow Fook Yiptong , Marek Hytha , Scott A. Kreps , Ilija Dukovski
IPC分类号： H01L21/336
CPC分类号： H01L29/1054 , H01L21/823807 , H01L29/155 , H01L29/7833
摘要： A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally adjacent the superlattice channel, and a gate overlying the superlattice channel for causing transport of charge carriers through the superlattice channel in a parallel direction relative to the stacked groups of layers. Each group of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice channel may have a higher charge carrier mobility in the parallel direction than would otherwise occur.
摘要翻译：半导体器件包括衬底和与衬底相邻的至少一个MOSFET。 MOSFET可以包括超晶格通道，其又包括多个堆叠的层组。 MOSFET还可以包括横向邻近超晶格沟道的源极和漏极区域，以及覆盖超晶格沟道的栅极，用于使电荷载流子相对于堆叠的层组在平行方向上通过超晶格沟道传输。每组超晶格通道可以包括限定基极半导体部分的多个层叠的基底半导体单层，以及其上的能带修饰层。能带修改层可以包括约束在相邻基底半导体部分的晶格内的至少一个非半导体单层，使得超晶格通道可以在平行方向上具有比否则发生的更高的载流子迁移率。

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