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31. 发明申请

US20120051216A1 Localized Congestion Exposure 有权
标题翻译：局部拥堵暴露
公开(公告)号：US20120051216A1
公开(公告)日：2012-03-01
申请号：US12976067
申请日：2010-12-22
申请人： Ying Zhang , Ingemar Johansson , Howard Green
发明人： Ying Zhang , Ingemar Johansson , Howard Green
IPC分类号： H04L12/26
CPC分类号： H04L47/2483 , H04L12/4633 , H04L47/115 , H04L47/12 , H04L47/127 , H04L47/14 , H04L47/22 , H04L47/26 , H04L47/32 , H04L61/2592 , H04W28/0231 , H04W28/0242 , H04W28/0284 , H04W28/0289 , H04W28/08 , H04W28/12 , H04W52/343 , H04W84/042
摘要： A method for localized congestion exposure within a local loop in a cellular network that is performed by a localized congestion exposure receiver node of the local loop. The method includes receiving downlink packets destined for a downstream user device. The downlink packets have headers that indicate a level of congestion experienced by the downlink packets. The headers also indicate a level of expected downstream congestion declared by an upstream node. The method also includes forwarding the downlink packets to the downstream user device through a wireless connection. The method further includes sending packets upstream that have feedback indicative of the level of congestion experienced by the downlink packets and any congestion experienced within the localized congestion exposure receiver node.
摘要翻译：一种在本地环路的本地拥塞暴露接收器节点执行的蜂窝网络中本地环路内的局部拥塞暴露的方法。该方法包括接收去往下游用户设备的下行链路分组。下行链路分组具有指示下行链路分组经历的拥塞的级别的报头。标头还指示由上游节点声明的预期下游拥塞的级别。该方法还包括通过无线连接将下行链路分组转发到下游用户设备。该方法还包括向上游发送具有指示下行链路分组经历的拥塞的级别以及局部拥塞暴露接收机节点内经历的任何拥塞的反馈的分组。

32. 发明申请

US20110311825A1 SELECTIVE ETCH BACK PROCESS FOR CARBON NANOTUBES INTERGRATION 失效
标题翻译：碳纳米管交换的选择性回填工艺
公开(公告)号：US20110311825A1
公开(公告)日：2011-12-22
申请号：US12820870
申请日：2010-06-22
申请人： Maxime Darnon , Gerald W. Gibson , Pratik P. Joshi , Ryan M. Martin , Ying Zhang
发明人： Maxime Darnon , Gerald W. Gibson , Pratik P. Joshi , Ryan M. Martin , Ying Zhang
IPC分类号： B32B5/28
CPC分类号： C23C16/26 , C23C16/56 , H01J9/025 , H01J2201/30469 , H01L21/28562 , H01L21/31138 , H01L21/76837 , H01L21/76885 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10T428/30 , H01L2924/00
摘要： The present disclosure relates to a method for selectively etching-back a polymer matrix to expose tips of carbon nanotubes comprising: a. growing carbon nanotubes on a conductive substrate; b. filling the gap around the carbon nanotubes with a polymeric fill matrix comprising at least one latent photoacid generator; and c. selectively etching-back the polymeric fill matrix to expose tips of the carbon nanotubes.
摘要翻译：本公开涉及一种用于选择性地蚀回聚合物基质以暴露碳纳米管尖端的方法，其包括：a。在导电基底上生长碳纳米管; b。用包含至少一个潜在光酸产生剂的聚合物填充基质填充碳纳米管周围的间隙; 和c。选择性地回蚀聚合物填充基质以暴露碳纳米管的尖端。

33. 发明申请

US20110278580A1 METHODOLOGY FOR FABRICATING ISOTROPICALLY SOURCE REGIONS OF CMOS TRANSISTORS 审中-公开
标题翻译：制造CMOS晶体管等电源区的方法
公开(公告)号：US20110278580A1
公开(公告)日：2011-11-17
申请号：US12779079
申请日：2010-05-13
申请人： Nicholas C. Fuller , Steve Koester , Isaac Lauer , Ying Zhang
发明人： Nicholas C. Fuller , Steve Koester , Isaac Lauer , Ying Zhang
IPC分类号： H01L29/78 , H01L29/06 , H01L29/04 , H01L21/311
CPC分类号： H01L29/78675 , H01L21/3065 , H01L21/3083 , H01L21/84 , H01L29/66636 , H01L29/66659 , H01L29/7848 , H01L29/78618 , H01L29/78654
摘要： A method for fabricating recessed source regions of aggressively scaled CMOS devices. In this method a processing sequence of plasma etch, deposition, followed by plasma etch is used to controllably form recessed regions of the source in the channel of a thin body, much less than 40 nm, device to enable subsequent epitaxial growth of SiGe, SiC, or other materials, and a consequent increase in the device and ring oscillator performance. A Field Effect Transistor device is also provided, which includes: a buried oxide layer; a silicon layer above the buried oxide layer; an isotropically recessed source region; and a gate stack which includes a gate dielectric, a conductive material, and a spacer.
摘要翻译：一种用于制造积极缩放CMOS器件的凹陷源区的方法。在该方法中，使用等离子体蚀刻，沉积，随后进行等离子体蚀刻的处理顺序可控制地在薄体的沟道中形成远远小于40nm的器件的源极的凹陷区域，以使SiGe，SiC的后续外延生长，或其他材料，并且随之而来的器件和环形振荡器性能的增加。还提供场效应晶体管器件，其包括：掩埋氧化物层; 掩埋氧化物层上方的硅层; 各向同性凹陷的源区; 以及包括栅极电介质，导电材料和间隔物的栅极堆叠。

34. 发明申请

US20110267982A1 System And Method For Determining An Optimal Backbone For Robotic Relay Networks 有权
标题翻译：用于确定机器人中继网络的最佳骨干的系统和方法
公开(公告)号：US20110267982A1
公开(公告)日：2011-11-03
申请号：US12771283
申请日：2010-04-30
申请人： Ying Zhang , Gabe Hoffmann
发明人： Ying Zhang , Gabe Hoffmann
IPC分类号： H04L12/28
CPC分类号： H04W24/02 , H04B7/2606 , H04L45/48 , H04W24/08 , H04W40/12 , H04W84/047 , H04W84/18
摘要： A system and method for determining an optimal backbone for a robotic relay network are provided. A robotic relay network comprising a plurality of nodes including a base station node, one or more mobile relay nodes, and one or more user nodes is provided. A signal strength value for each pair-wise communication link between each of the nodes is identified. A weight function is applied to each communication link value to determine a communication link weight. An optimal backbone tree is determined from the communication link weights.
摘要翻译：提供了一种用于确定机器人中继网络的最佳主干的系统和方法。提供了包括多个节点的机器人中继网络，包括基站节点，一个或多个移动中继节点和一个或多个用户节点。识别每个节点之间的每个成对通信链路的信号强度值。对每个通信链路值应用权重函数以确定通信链路权重。从通信链路权重确定最佳主干树。

35. 发明申请

US20110256212A1 Use of 8-Quinolinol and its Analogs to Target Cancer Stem Cells 审中-公开
标题翻译：使用8-喹啉醇及其类似物靶向癌症干细胞
公开(公告)号：US20110256212A1
公开(公告)日：2011-10-20
申请号：US13032403
申请日：2011-02-22
申请人： Ying Zhang , Jiangbing Zhou , Hao Zhang
发明人： Ying Zhang , Jiangbing Zhou , Hao Zhang
IPC分类号： A61K9/127 , A61K31/47 , A61K31/4709 , A61K31/704 , A61K31/475 , A61K31/4745 , A61K33/24 , A61K31/519 , A61K31/7068 , A61K31/5377 , A61K31/517 , A61K31/7048 , A61K31/513 , A61K31/675 , A61K31/52 , A61K31/7076 , A61P35/00 , A61P35/02 , A61P35/04 , C12N5/095
CPC分类号： A61K31/47
摘要： 8-quinolinol (8Q) and derivatives thereof for use in the treatment of proliferative diseases such as cancer, in particular slow metabolizing quiescent cancer stem cells.
摘要翻译： 8-羟基喹啉（8Q）及其衍生物，用于治疗增殖性疾病如癌症，特别是慢代谢静止型干细胞。

36. 发明申请

US20110241650A1 ELECTROCHEMICAL SENSOR FOR DISINFECTANTS 审中-公开
标题翻译：电化学传感器
公开(公告)号：US20110241650A1
公开(公告)日：2011-10-06
申请号：US13164723
申请日：2011-06-20
申请人： Ying Zhang
发明人： Ying Zhang
IPC分类号： G01R19/00
CPC分类号： G01N27/404
摘要： An electrochemical sensor to measure disinfectants is provided. In accordance with one aspect of the invention, the sensor has a silver working electrode disposed in an electrolyte proximate a porous membrane. There is a reference electrode made of silver in contact with the electrolyte. The chemical composition of electrolyte contains one or more anions that make the potential at the reference electrode higher than 0.35 V versus standard hydrogen electrode. The anions form silver salt with solubility higher than the solubility of silver chloride. The voltage at the working electrode versus the reference electrode is maintained negative to keep the background current small enough while maintains the feasibility to reduce disinfectants. Solid phase silver salt of the anions is added within the sensor body, which will prevent poisoning the reference electrode by halide anions diffused into the electrolyte.
摘要翻译：提供了一种测量消毒剂的电化学传感器。根据本发明的一个方面，传感器具有设置在靠近多孔膜的电解质中的银工作电极。存在与电解质接触的由银制成的参比电极。电解液的化学成分含有一个或多个阴极，使参考电极的电位高于0.35V，而不是标准氢电极。阴离子形成银盐，其溶解度高于氯化银的溶解度。工作电极与参比电极的电压保持不变，以保持背景电流足够小，同时保持降低消毒剂的可行性。阴离子的固相银盐被添加到传感器体内，这将防止参比电极通过扩散到电解质中的卤化物阴离子中毒。

37. 发明申请

US20110152258A1 Compounds and Methods for Kinase Modulation, and Indications Therefor 有权
标题翻译：化合物和激酶调节方法及其适应症
公开(公告)号：US20110152258A1
公开(公告)日：2011-06-23
申请号：US12949741
申请日：2010-11-18
申请人： Prabha N. Ibrahim , Wayne Spevak , Hanna Cho , Songyuan Shi , Chao Zhang , Ying Zhang
发明人： Prabha N. Ibrahim , Wayne Spevak , Hanna Cho , Songyuan Shi , Chao Zhang , Ying Zhang
IPC分类号： A61K31/5377 , C07D487/04 , A61K31/519 , C07D413/14 , C07D471/04 , A61K31/437 , A61P9/00 , A61P35/00 , A61P25/28 , A61P1/16 , A61P25/16 , A61P13/12 , A61P29/00 , A61P21/00
CPC分类号： C07D487/04 , A61K31/437 , A61K31/519 , A61K31/5377 , C07D401/04 , C07D403/04 , C07D471/04
摘要： Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on at least one Raf protein kinase. In certain aspects and embodiments, the described compounds are active in inhibiting proliferation of a Ras mutant cell line. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of B-Raf V600E mutant protein kinase, including melanoma, glioma, glioblastoma multiforme, pilocytic astrocytoma, colorectal cancer, thyroid cancer, lung cancer, ovarian cancer, prostate cancer, liver cancer, gallbladder cancer, gastrointestinal stromal tumors, biliary tract cancer, and cholangiocarcinoma. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of c-Raf-1 protein kinase, including acute pain, chronic pain or polycystic kidney disease.
摘要翻译：其化合物及其盐，其制剂，其缀合物，其衍生物，其形式及用途。在某些方面和实施方案中，所述的化合物或其盐，其制剂，其缀合物，其衍生物，其形式在至少一种Raf蛋白激酶上具有活性。在某些方面和实施方案中，所述化合物在抑制Ras突变细胞系的增殖中是有活性的。还描述了其用于治疗疾病和病症的方法，包括与B-Raf V600E突变蛋白激酶（包括黑素瘤，神经胶质瘤，多形性成胶质细胞瘤，纤维细胞性星形细胞瘤，结肠直肠癌，甲状腺癌，肺癌，卵巢）的活动相关的疾病和病症癌症，前列腺癌，肝癌，胆囊癌，胃肠道间质瘤，胆道癌和胆管癌。还描述了其用于治疗疾病和病症的方法，包括与c-Raf-1蛋白激酶的活性相关的疾病和病症，包括急性疼痛，慢性疼痛或多囊肾病。

38. 发明申请

US20110143482A1 SUSPENDED GERMANIUM PHOTODETECTOR FOR SILICON WAVEGUIDE 有权
标题翻译：用于硅波长的停止的德国光电转换器
公开(公告)号：US20110143482A1
公开(公告)日：2011-06-16
申请号：US13005821
申请日：2011-01-13
申请人： Solomon Assefa , Jack O. Chu , Martin M. Frank , William M. Green , Young-hee Kim , George G. Totir , Joris Van Campenhout , Yurri A. Vlasov , Ying Zhang
发明人： Solomon Assefa , Jack O. Chu , Martin M. Frank , William M. Green , Young-hee Kim , George G. Totir , Joris Van Campenhout , Yurri A. Vlasov , Ying Zhang
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , B82Y20/00 , G02B6/12004 , G02B6/136 , G02B2006/12123 , H01L31/109 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.
摘要翻译：在第一外延硅层的顶表面上外延地形成第一硅锗合金层，第二外延硅层，第二硅锗层和锗层的垂直叠层。第二外延硅层，第二硅锗层和锗层通过介电盖部分，电介质间隔物和第一硅锗层被图案化和封装。在第一和第二硅层之间去除硅锗层以形成硅锗台面结构，其结构上支撑包括硅部分，硅锗合金部分，锗光电检测器和介电帽部分的叠层的悬垂结构。锗光电探测器由硅锗台面结构悬挂而不邻接硅波导。锗扩散到硅波导和锗检测器中的缺陷密度被最小化。

39. 发明申请

US20110129978A1 METHOD AND STRUCTURE FOR FORMING FINFETS WITH MULTIPLE DOPING REGIONS ON A SAME CHIP 有权
标题翻译：在同一芯片上形成多个掺杂区域的金属熔体的方法和结构
公开(公告)号：US20110129978A1
公开(公告)日：2011-06-02
申请号：US12628663
申请日：2009-12-01
申请人： Kangguo Cheng , Bruce B. Doris , Ying Zhang
发明人： Kangguo Cheng , Bruce B. Doris , Ying Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/66803 , H01L21/26586
摘要： A method for fabrication of features for an integrated circuit includes patterning a first semiconductor structure on a surface of a semiconductor device, and epitaxially growing semiconductor material on opposite sides of the first semiconductor structure to form fins. A first angled ion implantation is applied to one side of the first semiconductor structure to dope a respective fin on the one side. The first semiconductor structure is selectively removed to expose the fins. Fin field effect transistors are formed using the fins.
摘要翻译：一种用于集成电路的特征的制造方法包括在半导体器件的表面上形成第一半导体结构，并且在第一半导体结构的相对侧上外延生长半导体材料，以形成鳍片。第一成角度的离子注入被施加到第一半导体结构的一侧以在一侧上掺杂相应的翅片。选择性地去除第一半导体结构以暴露鳍片。鳍状场效应晶体管使用鳍形成。

40. 发明授权

US07935637B2 Resist stripping methods using backfilling material layer 有权
标题翻译：使用回填材料层的抗剥落方法
公开(公告)号：US07935637B2
公开(公告)日：2011-05-03
申请号：US11839934
申请日：2007-08-16
申请人： Nicholas C. M. Fuller , Sivananda Kanakasabapathy , Ying Zhang
发明人： Nicholas C. M. Fuller , Sivananda Kanakasabapathy , Ying Zhang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31133 , H01L21/31058 , H01L21/31138
摘要： A method for fabricating a microelectronic structure provides for forming a backfilling material layer at least laterally adjacent, and preferably laterally adjoining, a resist layer located over a substrate. Preferably, the resist layer comprises a surface treated resist layer. Optionally, the backfilling material layer may be surface treated similarly to the surface treated resist layer. Under such circumstances: (1) surface portions of the backfilling material layer and resist layer; and (2) remaining portions of the backfilling material layer and resist layer, may be sequentially stripped using a two step etch method, such as a two step plasma etch method. Alternatively, a surface portion of the surface treated resist layer only may be stripped while using a first etch method, and the remaining portions of the resist layer and backfilling material layer may be planarized prior to being simultaneously stripped while using a second etch method.
摘要翻译：用于制造微电子结构的方法提供了形成位于衬底上方的至少侧向邻近且优选地横向邻接的抗蚀剂层的回填材料层。优选地，抗蚀剂层包括表面处理的抗蚀剂层。任选地，回填材料层可以与表面处理的抗蚀剂层类似地进行表面处理。在这种情况下：（1）回填材料层和抗蚀剂层的表面部分; 和（2）回填材料层和抗蚀剂层的剩余部分可以使用两步蚀刻方法，例如两步等离子体蚀刻方法来顺序剥离。或者，仅使用第一蚀刻方法剥离表面处理的抗蚀剂层的表面部分，并且可以在使用第二蚀刻方法同时剥离之前将抗蚀剂层和回填材料层的其余部分平坦化。

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