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    • 32. 发明授权
    • High output semiconductor laser device utilizing a mesa-stripe optical
confinement region
    • 利用台面条状光限制区域的高输出半导体激光器件
    • US4602371A
    • 1986-07-22
    • US571578
    • 1984-01-17
    • Toshihiro KawanoTsukuru OhtoshiNaoki ChinoneTakashi KajimuraMichiharu Nakamura
    • Toshihiro KawanoTsukuru OhtoshiNaoki ChinoneTakashi KajimuraMichiharu Nakamura
    • H01S5/20H01S5/227H01S5/32H01S3/19
    • H01S5/227H01S5/2081H01S5/2275H01S5/3213
    • A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconductor layers are smaller in refractive index than the second and third semiconductor layers, and the third semiconductor layer is larger in refractive index than the second semiconductor layer. On the other hand, the second and fourth semiconductor layers are larger in forbidden bandwidth than the third semiconductor layer. At least the first and fourth semiconductor layers are opposite in conductivity type to each other. In addition to this, the optical confinement region is formed into a mesa-stripe, and both side walls of this mesa-stripe which are substantially parallel to the traveling direction of a laser beam are embedded with a fifth semiconductor layer. Also, the width of the second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical confinement region is made larger than that of the third semiconductor layer. Accordingly, by virtue of this structure, a large output is ensured by this semiconductor laser device.
    • 半导体激光装置设置有由第一,第二,第三和第四半导体层构成的光限制区域,该第一,第二,第三和第四半导体层依次相互接触地设置在预定半导体衬底的上部。 第一和第四半导体层的折射率小于第二和第三半导体层,并且第三半导体层的折射率比第二半导体层大。 另一方面,第二和第四半导体层的禁带宽度大于第三半导体层。 至少第一和第四半导体层的导电类型彼此相反。 除此之外,光限制区域形成为台面条状,并且基本上平行于激光束的行进方向的该台面条的两个侧壁都嵌有第五半导体层。 此外,第二半导体层在与激光束的行进方向垂直的部分的宽度以及与光限制区域内的结的平行方向的宽度大于第三半导体层的宽度。 因此,通过这种结构,通过该半导体激光器件确保了大的输出。
    • 35. 发明授权
    • Semiconductor laser device and a method for fabricating the same
    • 半导体激光器件及其制造方法
    • US4025939A
    • 1977-05-24
    • US606053
    • 1975-08-20
    • Kunio AikiHitachi, Ltd.Michiharu NakamuraJun-Ichi Umeda
    • Kunio AikiHitachi, Ltd.Michiharu NakamuraJun-Ichi Umeda
    • H01S5/00H01S5/12H01L33/00H01L29/161
    • H01S5/12H01S5/1215
    • A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, an optical confinement region comprising a laser active region consisting of GaAs disposed on the n-type GaAlAs layer, a first p-type GaAlAs region whose aluminum content is less than that of the n-type GaAlAs layer, disposed on said laser active region and a second p-type GaAlAs region whose aluminum content is less than that of the first p-type GaAlAs region, the surface of which opposite that disposed on said first p-type GaAlAs region is a periodically corrugated surface, a p-type GaAlAs layer whose aluminum content is more than that of said first p-type GaAlAs region, disposed on the periodically corrugated surface of the second p-type GaAlAs region, a p-type GaAs layer disposed on said p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and which has a very low threshold value for laser oscillation and which is fabricated with a very high yield rate.
    • 一种半导体激光器件包括:n型GaAs层,n型GaAlAs层,设置在n型GaAs层上;光限制区,包括由设置在n型GaAlAs层上的GaAs构成的激光有源区;第一 其铝含量小于位于所述激光有源区上的n型GaAlAs层的p型GaAlAs区域和铝含量小于第一p型GaAlAs区域的第二p型GaAlAs区域, 其表面设置在所述第一p型GaAlAs区域上的表面是周期性波纹状表面,其铝含量大于所述第一p型GaAlAs区域的铝含量的p型GaAlAs层,其设置在 第二p型GaAlAs区域,设置在所述p型GaAlAs层上的p型GaAs层和分别设置在n型和p型GaAs层上的电极,并且具有非常低的激光阈值 振荡,是织物 以非常高的产量率。
    • 39. 发明授权
    • Path searched device and CDMA receiver with the same
    • 路径搜索设备和CDMA接收机相同
    • US06487193B1
    • 2002-11-26
    • US09378265
    • 1999-08-20
    • Hajime HamadaYasuyuki OishiKazuo NagataniMichiharu NakamuraKoji Matsuyama
    • Hajime HamadaYasuyuki OishiKazuo NagataniMichiharu NakamuraKoji Matsuyama
    • H04B7216
    • H04B7/18584
    • The present invention is directed to a path searching device and a CDMA receiver employing the same, having a reduced circuit scale and operating to carry out a smaller number of operations. For a direct spreading CDMA communication system, a CDMA receiver includes a reception demodulator including an antenna, a high-frequency amplifier a band-pass filter, demodulators, etc. The CDMA receiver also has despreading units, a determination unit, and a path search device. The path search device has a sampling unit for sampling an input signal by low-speed oversampling based on an integer multiple of a chip rate and by high-speed oversampling that is faster than the low-speed oversampling, a first circuit for finding a correlative value between a spreading code and a signal provided by the low-speed oversampling and finding timing corresponding to a maximum correlative value. A second circuit for finding despreading timing according to correlative values between a signal provided by the high-speed oversampling and a spreading code corresponding to the timing provided by the first circuit.
    • 本发明涉及一种路径搜索装置和采用该路径搜索装置的CDMA接收机,其具有减小的电路规模并且操作以执行较少数量的操作。 对于直接扩频CDMA通信系统,CDMA接收机包括接收解调器,包括天线,高频放大器,带通滤波器,解调器等。CDMA接收机还具有解扩单元,确定单元和路径搜索 设备。 路径搜索装置具有采样单元,用于通过基于芯片速率的整数倍的低速过采样和通过比低速过采样快的高速过采样来对输入信号进行采样,用于找到相关的第一电路 扩展码与由对应于最大相关值的低速过采样和寻找定时提供的信号之间的值。 根据由高速过采样提供的信号与对应于由第一电路提供的定时的扩展码之间的相关值,找到解扩定时的第二电路。
    • 40. 发明授权
    • Demodulator
    • 解调器
    • US06442218B1
    • 2002-08-27
    • US09377141
    • 1999-08-19
    • Michiharu NakamuraYasuyuki OishiKazuo NagataniHajime HamadaYoshihiko AsanoHiroyuki SekiYoshinori Tanaka
    • Michiharu NakamuraYasuyuki OishiKazuo NagataniHajime HamadaYoshihiko AsanoHiroyuki SekiYoshinori Tanaka
    • H03D100
    • H04L25/062H04L25/03114
    • The present invention relates to a demodulator which receives a signal transmitted via phase modulation or multivalue QAM modulation, and decides transmitted data based on the received signal. The present invention enhances a transmission-line estimate by using tentatively decided data symbols as pilot symbols and in estimating a transmission line without a decrease in accuracy of transmission-line estimate even when an error rate of the tentatively decided data symbols is increased. The demodulator includes a pilot-based transmission-line estimation unit for estimating transmission-line characteristics by using pilot symbols. A tentative-data-decision unit for tentatively deciding data symbols based on the pilot-based transmission-line estimate. A data-based transmission-line estimation unit for estimating the transmission-line characteristics by using the tentatively decided data. Weight-coefficient-multiplication units for multiplying pilot-based and data-based transmission-line estimates by respective weights having a ratio therebetween varying in accordance with reliability of the tentatively ascertained data. A pilot&data-based transmission-line estimation unit for obtaining a transmission-line estimate by averaging weighted transmission-line estimates.
    • 本发明涉及一种接收通过相位调制或多值QAM调制发送的信号的解调器,并且基于接收到的信号来确定发送的数据。 本发明通过使用暂时确定的数据符号作为导频符号,并且即使当临时确定的数据符号的错误率增加时,也不会降低传输线估计的精度,来增强传输线估计。 解调器包括基于导频的传输线估计单元,用于通过使用导频符号估计传输线特性。 一种暂定数据判定单元,用于基于基于导频的传输线估计暂时地确定数据符号。 一种基于数据的传输线估计单元,用于通过使用暂时确定的数据来估计传输线特性。 权重系数乘法单元,用于乘以基于导频和基于数据的传输线估计,其各自的权重之间的比率根据暂时确定的数据的可靠性而变化。 一种基于导频和数据的传输线估计单元,用于通过对加权的传输线估计进行平均来获得传输线估计。